JPH02134843A - Integrated circuit - Google Patents
Integrated circuitInfo
- Publication number
- JPH02134843A JPH02134843A JP63289458A JP28945888A JPH02134843A JP H02134843 A JPH02134843 A JP H02134843A JP 63289458 A JP63289458 A JP 63289458A JP 28945888 A JP28945888 A JP 28945888A JP H02134843 A JPH02134843 A JP H02134843A
- Authority
- JP
- Japan
- Prior art keywords
- test pattern
- test
- pattern
- integrated circuit
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012360 testing method Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000000523 sample Substances 0.000 claims abstract description 8
- 238000005259 measurement Methods 0.000 claims description 12
- 238000013142 basic testing Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 238000007689 inspection Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は集積回路に関する。[Detailed description of the invention] [Industrial application field] TECHNICAL FIELD This invention relates to integrated circuits.
集積回路には、半導体基板に形成された各素子及びエレ
メントが設計値通り形成されているかをモニタするため
に、各検査用の基本エレメントで構成される検査用パタ
ーンを有しているものがある。Some integrated circuits have a test pattern consisting of basic elements for each test in order to monitor whether each element formed on a semiconductor substrate is formed as designed. .
その場合、外部テスタにより特性チエツクができるよう
にプローブの針と接触する端子を有している。In that case, it has a terminal that comes into contact with the needle of the probe so that the characteristics can be checked by an external tester.
第3図は従来の集積回路の一例のパターン図である。FIG. 3 is a pattern diagram of an example of a conventional integrated circuit.
集積回路のパターンは、マトリックス状に設けられたバ
イアホール3を配線金属層4で直列に接続されたバイア
ホール検査用パターン1oと、その両端にバッド1を有
している。The integrated circuit pattern has a via hole inspection pattern 1o in which via holes 3 provided in a matrix are connected in series through a wiring metal layer 4, and pads 1 at both ends thereof.
上述した従来の集積回路は、検査用パターンに次の二つ
の欠点があった。The conventional integrated circuit described above has the following two drawbacks in the test pattern.
第一は、1つの検査用パターンには、少なくとも2つ以
上のパッドを必要とする為、検査用パターンの数が多く
なってくると、そのパッド面積も増して集積回路を形成
するチップサイズが増大したり、また、チップサイズの
制約により検査用パターンを選択して収納する場合も出
てくる。First, one test pattern requires at least two pads, so as the number of test patterns increases, the area of the pads also increases, increasing the chip size that forms the integrated circuit. In some cases, inspection patterns may be selected and stored due to chip size constraints.
第二は、各パッドは、プローバの針を介して検査される
為に、針とパッドの接触の具合によっては不安定な検査
となりうる場合が生ずるという欠点があった。Second, since each pad is inspected through the needle of the prober, there is a drawback that depending on the degree of contact between the needle and the pad, the inspection may be unstable.
本発明の目的は、パッド数が少くかつ安定な検査のでき
る検査用パターンを有する集積回路を提供することにあ
る。An object of the present invention is to provide an integrated circuit having a test pattern with a small number of pads and which allows stable testing.
本発明の集積回路は、半導体基板の一主面に形成された
活性領域にトランジスタ、抵抗、バイアホール及び配線
層などのテスト用の基本エレメントを有する検査用パタ
ーンと、該検査用パターンと接続しかつ試験用のプロー
ブに接触させるための複数の測定端子とを有する集積回
路において、前記測定端子の少なくとも1つが前記半導
体基板に電気的に接続されて構成されている。The integrated circuit of the present invention includes a test pattern having basic test elements such as transistors, resistors, via holes, and wiring layers in an active region formed on one main surface of a semiconductor substrate, and a test pattern connected to the test pattern. The integrated circuit also has a plurality of measurement terminals for contacting a test probe, with at least one of the measurement terminals being electrically connected to the semiconductor substrate.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図(a)及び(b)は本発明の第1の実施例のパタ
ーン図及びそれに対応するチップのAA′線断面図であ
る。FIGS. 1(a) and 1(b) are a pattern diagram of a first embodiment of the present invention and a sectional view taken along line AA' of a chip corresponding thereto.
集積回路の製造方法は、まずP型シリコン基板5の上層
の一部にボロン等のイオンを打ち込み、さらに熱拡散を
おこなってP+拡散層6を形成する。In the method for manufacturing an integrated circuit, ions such as boron are first implanted into a part of the upper layer of a P-type silicon substrate 5, and then thermal diffusion is performed to form a P+ diffusion layer 6.
次に表面に下地絶縁膜8を形成し、P+拡散層6に対応
してコンタクトホール2を開孔してそれを介して配線金
属層4とバイアホール3からなるバイアホール検査用パ
ターン10の一方をシリコン基板5のP+拡散層6に接
続する。Next, a base insulating film 8 is formed on the surface, a contact hole 2 is opened corresponding to the P+ diffusion layer 6, and one side of the via hole inspection pattern 10 consisting of the wiring metal layer 4 and the via hole 3 is formed through the contact hole 2. is connected to the P+ diffusion layer 6 of the silicon substrate 5.
その後、眉間絶縁膜9及び保護膜7を形成する。Thereafter, a glabellar insulating film 9 and a protective film 7 are formed.
以上の説明は、本発明の検査用パターンの実現に必要な
製造プロセスを例示したが、実際は集積回路のマスクに
本パターンを形成し、製造プロセスを処理することによ
り、実現することになる。The above explanation has exemplified the manufacturing process necessary to realize the inspection pattern of the present invention, but in reality, this pattern is realized by forming the pattern on a mask of an integrated circuit and performing the manufacturing process.
バイアホール検査用パターン10の特性をチエツクする
には、1方のグローブをパッド1に接触し、他の電極は
P型シリコン基板5の裏面に接続すれば良い。To check the characteristics of the via hole inspection pattern 10, one glove may be brought into contact with the pad 1, and the other electrode may be connected to the back surface of the P-type silicon substrate 5.
従ってプローブの数は、従来の2ケから1ケに減り、か
つP型シリコン基板1との接続は安定なので接触不良に
よる誤検査の問題は減少する。Therefore, the number of probes is reduced from the conventional two to one, and since the connection with the P-type silicon substrate 1 is stable, the problem of incorrect testing due to poor contact is reduced.
第2図は本発明の第2の実施例のパターン図である。FIG. 2 is a pattern diagram of a second embodiment of the present invention.
集積回路は、バイアホール検査用パターン10コンタク
トホール検査用パターン11.配線層検査用パターン1
2.抵抗測定用パターン13.オフセット値測定用パタ
ーン14及び複数のコンタクトホール2とパッドを有し
ている。The integrated circuit includes a via hole inspection pattern 10 a contact hole inspection pattern 11. Wiring layer inspection pattern 1
2. Resistance measurement pattern 13. It has an offset value measurement pattern 14 and a plurality of contact holes 2 and pads.
本実施例では6つの検査用パターンを構成しており、従
来の技術では12個のパッドを必要としたが、本実施例
のパターンでは片方を全てコンタク1ヘホールを介して
P型シリコン基板に共通接続しているので、パッド数が
半分の6個となる効果がある。In this example, six test patterns are configured, and while the conventional technology required 12 pads, in this example, one of the patterns is all connected to the P-type silicon substrate through a hole to contact 1. Since they are connected, there is an effect that the number of pads is halved to 6.
また、コンタクトを通してシリコン基板に接続しである
だけのオフセット値測定用パターン14を含むことで、
予めコンタクト抵抗及びP型シリコン基板抵抗を知るこ
とが可能である。In addition, by including the offset value measurement pattern 14 that is simply connected to the silicon substrate through the contact,
It is possible to know the contact resistance and the P-type silicon substrate resistance in advance.
例えば、抵抗測定用パターン13で得られた測定値から
オフセット値測定用パターン14がら得t:測定値を引
くことで、真の抵抗値の補正が可能である。For example, the true resistance value can be corrected by subtracting the measured value obtained from the offset value measuring pattern 14 from the measured value obtained using the resistance measuring pattern 13.
以上説明したように本発明は、検査用パターンの1つ以
上の測定端子を半導体基板に直接接続してその裏面を測
定端子のパッドとして利用することにより、従来の検査
用パターンに比べ、パッド面積分だけ小さくすることが
できる。As explained above, the present invention connects one or more measurement terminals of the inspection pattern directly to the semiconductor substrate and uses the back surface as a pad for the measurement terminal, thereby making it possible to increase the pad area compared to the conventional inspection pattern. It can be made smaller by that amount.
また、測定用の端子を基板の裏面からとれるので、全て
の端子をプローブ針からとる方法に比べて安定して検査
することができる効果がある。Furthermore, since the measurement terminals can be removed from the back surface of the board, this method has the effect of allowing more stable testing than the method in which all the terminals are removed from probe needles.
第1図(a)及び(b)は本発明の第1の実施例のパタ
ーン図及びそれに対応するチップのA〜A′線断面図、
第2図は本発明の第2の実施例のパターン図、第3図は
従来の集積回路の一例のパターン図である。
1・・・パッド、2・・・コンタクトホール、3・・・
バイアホール、4・・・配線金属層、5・・・P型シリ
コン基板、10・・・バイアホール検査用パターン、1
1・・・コンタクトホール検査用パターン、12・・・
配線層検査用パターン、13・・・抵抗測定用パターン
、14・・・オフセット値測定用パターン。
代理人 弁理士 内 原 晋
茅FIGS. 1(a) and 1(b) are pattern diagrams of the first embodiment of the present invention and sectional views taken along line A to A' of the chip corresponding thereto;
FIG. 2 is a pattern diagram of a second embodiment of the present invention, and FIG. 3 is a pattern diagram of an example of a conventional integrated circuit. 1... Pad, 2... Contact hole, 3...
Via hole, 4... Wiring metal layer, 5... P-type silicon substrate, 10... Pattern for via hole inspection, 1
1... Contact hole inspection pattern, 12...
Pattern for wiring layer inspection, 13... Pattern for resistance measurement, 14... Pattern for offset value measurement. Agent Patent Attorney Shinkyo Uchihara
Claims (1)
スタ、抵抗、バイアホール及び配線層などのテスト用の
基本エレメントを有する検査用パターンと、該検査用パ
ターンと接続しかつ試験用のプローブに接触させるため
の複数の測定端子とを有する集積回路において、前記測
定端子の少なくとも1つが前記半導体基板に電気的に接
続されていることを特徴とする集積回路。A test pattern having basic test elements such as transistors, resistors, via holes, and wiring layers in an active region formed on one main surface of a semiconductor substrate, and a test probe connected to the test pattern and in contact with a test probe. 1. An integrated circuit having a plurality of measurement terminals for controlling the semiconductor substrate, wherein at least one of the measurement terminals is electrically connected to the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63289458A JPH02134843A (en) | 1988-11-15 | 1988-11-15 | Integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63289458A JPH02134843A (en) | 1988-11-15 | 1988-11-15 | Integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02134843A true JPH02134843A (en) | 1990-05-23 |
Family
ID=17743527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63289458A Pending JPH02134843A (en) | 1988-11-15 | 1988-11-15 | Integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02134843A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100333368B1 (en) * | 1995-09-13 | 2002-09-04 | 주식회사 하이닉스반도체 | Test pattern for checking defects in semiconductor device |
| WO2025115081A1 (en) * | 2023-11-28 | 2025-06-05 | 株式会社日立ハイテク | Process diagnosing system, process monitoring system, and wafer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54100672A (en) * | 1978-01-26 | 1979-08-08 | Fuji Electric Co Ltd | Semiconductor device |
| JPS54159879A (en) * | 1978-06-07 | 1979-12-18 | Nec Corp | Production of semiconductor device |
| JPS566143A (en) * | 1979-06-27 | 1981-01-22 | Hitachi Ltd | Flameless atomizer for atomic absorption analysis |
| JPS579219A (en) * | 1980-06-20 | 1982-01-18 | Meidensha Electric Mfg Co Ltd | Ac detecting relay |
| JPS6188539A (en) * | 1984-10-08 | 1986-05-06 | Nec Corp | Mos field effect transistor |
-
1988
- 1988-11-15 JP JP63289458A patent/JPH02134843A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54100672A (en) * | 1978-01-26 | 1979-08-08 | Fuji Electric Co Ltd | Semiconductor device |
| JPS54159879A (en) * | 1978-06-07 | 1979-12-18 | Nec Corp | Production of semiconductor device |
| JPS566143A (en) * | 1979-06-27 | 1981-01-22 | Hitachi Ltd | Flameless atomizer for atomic absorption analysis |
| JPS579219A (en) * | 1980-06-20 | 1982-01-18 | Meidensha Electric Mfg Co Ltd | Ac detecting relay |
| JPS6188539A (en) * | 1984-10-08 | 1986-05-06 | Nec Corp | Mos field effect transistor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100333368B1 (en) * | 1995-09-13 | 2002-09-04 | 주식회사 하이닉스반도체 | Test pattern for checking defects in semiconductor device |
| WO2025115081A1 (en) * | 2023-11-28 | 2025-06-05 | 株式会社日立ハイテク | Process diagnosing system, process monitoring system, and wafer |
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