JPH02136326U - - Google Patents
Info
- Publication number
- JPH02136326U JPH02136326U JP4445889U JP4445889U JPH02136326U JP H02136326 U JPH02136326 U JP H02136326U JP 4445889 U JP4445889 U JP 4445889U JP 4445889 U JP4445889 U JP 4445889U JP H02136326 U JPH02136326 U JP H02136326U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- tray
- vapor phase
- vapor
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 229910000792 Monel Inorganic materials 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910000856 hastalloy Inorganic materials 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 229910001026 inconel Inorganic materials 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は、気相成長装置の構成を示す側面図で
ある。第２図は、第１図の平面図である。 １……トレイ、２……ヘツド、２１……窒素ガ
ス供給室、２２……反応ガス供給室、３……予熱
器、４……主加熱器、５……半導体ウエーハ。
ある。第２図は、第１図の平面図である。 １……トレイ、２……ヘツド、２１……窒素ガ
ス供給室、２２……反応ガス供給室、３……予熱
器、４……主加熱器、５……半導体ウエーハ。
Claims (1)
- 【実用新案登録請求の範囲】 (1) 半導体ウエーハ５を載置して搬送するトレ
イ１を有する気相成長装置において、 前記トレイ１が、少なくとも気相成長温度にお
いて変形することが少ない物質からなる下地の表
面に、前記下地との接着性がよく、前記下地の物
質に比し耐薬品性が高く、少なくともその融点が
気相成長温度に比し高く、かつ、その不純物含有
量が前記下地の物質より少ない物質が被覆されて
なる ことを特徴とする気相成長装置。 (2) 前記トレイ１の下地を構成する物質は、イ
ンコネル、ハステロイ、モネル、ステンレス鋼の
群から選択された金属であり、前記下地を被覆す
る物質は、金、白金の群から選択された金属であ
ることを特徴とする請求項１記載の気相成長装置
。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4445889U JPH02136326U (ja) | 1989-04-18 | 1989-04-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4445889U JPH02136326U (ja) | 1989-04-18 | 1989-04-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02136326U true JPH02136326U (ja) | 1990-11-14 |
Family
ID=31557781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4445889U Pending JPH02136326U (ja) | 1989-04-18 | 1989-04-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02136326U (ja) |
-
1989
- 1989-04-18 JP JP4445889U patent/JPH02136326U/ja active Pending
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