JPH02140964A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPH02140964A JPH02140964A JP63295027A JP29502788A JPH02140964A JP H02140964 A JPH02140964 A JP H02140964A JP 63295027 A JP63295027 A JP 63295027A JP 29502788 A JP29502788 A JP 29502788A JP H02140964 A JPH02140964 A JP H02140964A
- Authority
- JP
- Japan
- Prior art keywords
- pull
- resistor
- bonding
- bonding pad
- pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/547—Dispositions of multiple bond wires
- H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体集積回路に関し、特にプルアップ抵抗又
はプルダウン抵抗をオプションで外部導出端子に接続す
ることができる半導体集積回路に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit, and particularly to a semiconductor integrated circuit in which a pull-up resistor or a pull-down resistor can be optionally connected to an external lead-out terminal.
第3図と第4図に従来のプルアップ抵抗又はプルダウン
抵抗の内蔵を選択する一従来例を示す。FIGS. 3 and 4 show a conventional example in which a built-in pull-up resistor or pull-down resistor is selected.
第3図はプルアップ抵抗の内蔵を選択する回路図である
。第4図は第3図を実施するための簡単なレイアウト図
である。第4図においてボンディングパッド4−1は第
3図の端子3−1でありボンディングパッド4−1から
のびているアルミニウム配線4−2は第3図のインバー
タ3−2のゲートにつながっている。アルミ配線4−3
は、第3図のプルアップ抵抗3−3につながっている。FIG. 3 is a circuit diagram for selecting a built-in pull-up resistor. FIG. 4 is a simple layout diagram for implementing FIG. 3. In FIG. 4, bonding pad 4-1 is terminal 3-1 in FIG. 3, and aluminum wiring 4-2 extending from bonding pad 4-1 is connected to the gate of inverter 3-2 in FIG. 3. Aluminum wiring 4-3
is connected to the pull-up resistor 3-3 in FIG.
第3図において点線をつなぐことによってプルアップ抵
抗の内蔵を選択したことになり、これはデバイス的には
第4図において斜線部のアルミ配線4−4をつなぐこと
によりプルアップ抵抗の内蔵を選択したことになる。By connecting the dotted lines in Figure 3, you have selected a built-in pull-up resistor, and from a device perspective, by connecting the aluminum wiring 4-4 in the shaded area in Figure 4, you have selected a built-in pull-up resistor. That's what I did.
上述した従来の半導体集積回路は拡散工程のアルミ配線
にてプルアップ抵抗又はプルダウン抵抗の内蔵を選択す
ることができるようになっているので、プルアップ抵抗
又はプルダウン抵抗の内蔵の選択を変更するたびにアル
ミマスクを作うナくてはならず、製品ができ上がるまで
時間が長くなるという欠点がある。In the conventional semiconductor integrated circuit described above, it is possible to select a built-in pull-up resistor or pull-down resistor in the aluminum wiring during the diffusion process, so each time the selection of built-in pull-up resistor or pull-down resistor is changed, The drawback is that it takes a long time to make the product, as it requires making an aluminum mask.
本発明の半導体集積回路は、プルアップ抵抗又はプルダ
ウン抵抗のついた第1のボンディングパッドを有してお
り、同パッドは信号入力用又は信号出力用の第2のボン
ディングパッドに近接して設けていることを特徴とする
。The semiconductor integrated circuit of the present invention has a first bonding pad provided with a pull-up resistor or a pull-down resistor, and the first bonding pad is provided close to a second bonding pad for signal input or signal output. It is characterized by the presence of
したがって、第2のパッドに接続されるべき外部リード
に第1のパッドもワイヤで接続すれば、プルアップ又は
プルダウン抵抗付の端子とすることができる。Therefore, if the first pad is also connected with a wire to the external lead to be connected to the second pad, it can be used as a terminal with a pull-up or pull-down resistor.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例の構成図である。ボンディン
グパッド1−1はインバータ1−2につながっている。FIG. 1 is a block diagram of an embodiment of the present invention. Bonding pad 1-1 is connected to inverter 1-2.
ボンディングパッド1−3はプルアップ抵抗1−4につ
ながっている。ボンディングパッド1−1はリードフレ
ーム1−5とポンディングワイヤ1−6でつながってい
る。プルアップ抵抗1−4を内蔵する場合は、ボンディ
ングパッド1−3とリードフレーム1−5をポンディン
グワイヤ1−7でつなげばよい。内蔵しない場合は、ボ
ンディングパッド1−3とリードフレーム1−5をポン
ディングワイヤ1−7でつながないようにすればよい。Bonding pad 1-3 is connected to pull-up resistor 1-4. The bonding pad 1-1 is connected to the lead frame 1-5 by a bonding wire 1-6. When the pull-up resistor 1-4 is built in, the bonding pad 1-3 and the lead frame 1-5 may be connected with a bonding wire 1-7. When not built-in, the bonding pad 1-3 and the lead frame 1-5 may not be connected with the bonding wire 1-7.
ワイヤ1−7を設けるか否かは所謂ワイヤポンディング
工程で選択でき、製品完成を遅くすることはない。Whether or not to provide the wires 1-7 can be selected in the so-called wire bonding process, and the completion of the product will not be delayed.
第2図は本発明の他の実施例の構成図である。FIG. 2 is a block diagram of another embodiment of the present invention.
ボンディングパッド2−1.2−3.2−5とインバー
タ2−2、プルアップ抵抗2−4.2−8とは実施例1
と同じつながりになっている。さらにボンディングパッ
ド2−1とリードフレーム2−7とはポンディングワイ
ヤ2−8でつながっている。ボンディングパッド2−3
、又はボンディングパッド2−5もしくは両パッドをポ
ンディングワイヤ2−9又はポンディングワイヤ2−1
0でリードフレーム2−7につなげることにより抵抗値
の異なるプルアップ抵抗を内蔵することができる。Bonding pad 2-1.2-3.2-5, inverter 2-2, and pull-up resistor 2-4.2-8 are as in Example 1.
It has the same connection. Further, the bonding pad 2-1 and the lead frame 2-7 are connected by a bonding wire 2-8. Bonding pad 2-3
, or bonding pad 2-5 or both pads with bonding wire 2-9 or bonding wire 2-1
By connecting the lead frame 2-7 with 0, pull-up resistors with different resistance values can be built-in.
なお、上述した実施例に限定されず、プルダウン抵抗に
ついても同様に実施できる。また、パッド1−1.2−
1は入力端子に限らず、出力端子でも、入出力端子でも
よい。Note that the present invention is not limited to the above-mentioned embodiments, and may be implemented in the same manner with a pull-down resistor. Also, pad 1-1.2-
1 is not limited to an input terminal, but may be an output terminal or an input/output terminal.
以上説明したように本発明はプルアップ抵抗又はプルダ
ウン抵抗のついたボンディングパッドを設けることによ
りポンディング工程にてプルアップ抵抗又はプルダウン
抵抗の内蔵を選択することができ製品ができあがるまで
時間が短くできる効果がある。As explained above, in the present invention, by providing a bonding pad with a pull-up resistor or pull-down resistor, it is possible to select the built-in pull-up resistor or pull-down resistor in the bonding process, and the time until the product is completed can be shortened. effective.
1・・・・・・ボンディングパッド、1−2.2−2゜
3−2・・・・・・インバータ、1−4.2−4.2−
8.3−3・・・・・・プルアップ抵抗、l−5,2−
7・・・・・・リードフレーム、1−6.1−7.2−
8.2−9.2−10・・・・・・ポンディングワイヤ
、3−1・・・・・・端子、4−2.4−3・・・・・
・アルミ配線、4−4・・・・・・選択切り換えアルミ
配線。1...Bonding pad, 1-2.2-2゜3-2...Inverter, 1-4.2-4.2-
8.3-3...Pull-up resistor, l-5, 2-
7...Lead frame, 1-6.1-7.2-
8.2-9.2-10...Ponding wire, 3-1...Terminal, 4-2.4-3...
・Aluminum wiring, 4-4...Selectable aluminum wiring.
代理人 弁理士 内 原 晋Agent Patent Attorney Susumu Uchihara
第1図は本発明の一実施例の構成図、第2図は本発明の
他の実施例の構成図、第3図は一従来例の回路図、第4
図は第3図の簡単なレイアウト図である。
1−1.1−3.2−1.2−3.2−5.4VDD
第1
図
筋2.図
第3図
、Frd図Fig. 1 is a block diagram of an embodiment of the present invention, Fig. 2 is a block diagram of another embodiment of the present invention, Fig. 3 is a circuit diagram of a conventional example, and Fig. 4 is a block diagram of an embodiment of the present invention.
The figure is a simple layout diagram of FIG. 1-1.1-3.2-1.2-3.2-5.4VDD Figure 1 Line 2. Figure 3, Frd diagram
Claims (1)
とができる半導体集積回路において、プルアップ抵抗又
はプルダウン抵抗のついた第1のボンディングパッドと
、信号入力用又は信号出力用の第2のボンディングパッ
ドとを有し、これら第1および第2のボンディングパッ
ドが近接配置されていることを特徴とする半導体集積回
路。In a semiconductor integrated circuit in which a built-in pull-up resistor or pull-down resistor can be selected, a first bonding pad with a pull-up resistor or pull-down resistor and a second bonding pad for signal input or signal output are provided. 1. A semiconductor integrated circuit comprising: a first bonding pad and a second bonding pad disposed close to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63295027A JP2829994B2 (en) | 1988-11-21 | 1988-11-21 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63295027A JP2829994B2 (en) | 1988-11-21 | 1988-11-21 | Semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02140964A true JPH02140964A (en) | 1990-05-30 |
| JP2829994B2 JP2829994B2 (en) | 1998-12-02 |
Family
ID=17815376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63295027A Expired - Lifetime JP2829994B2 (en) | 1988-11-21 | 1988-11-21 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2829994B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10201710B4 (en) * | 2001-01-18 | 2016-11-10 | Fuji Electric Co., Ltd. | A physical size semiconductor sensor having adjustment pads for digital adjustment of a sensor output signal and method of making the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59188956A (en) * | 1983-04-11 | 1984-10-26 | Nec Corp | Semiconductor device |
| JPS6122446A (en) * | 1984-07-10 | 1986-01-31 | Asahi Optical Co Ltd | Actuator for two-dimensional drive of pickup for optical disc |
| JPS61173514A (en) * | 1985-01-29 | 1986-08-05 | Matsushita Electric Ind Co Ltd | Signal processing circuit |
| JPS61224446A (en) * | 1985-03-29 | 1986-10-06 | Fujitsu Ltd | Semiconductor integrated circuit |
-
1988
- 1988-11-21 JP JP63295027A patent/JP2829994B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59188956A (en) * | 1983-04-11 | 1984-10-26 | Nec Corp | Semiconductor device |
| JPS6122446A (en) * | 1984-07-10 | 1986-01-31 | Asahi Optical Co Ltd | Actuator for two-dimensional drive of pickup for optical disc |
| JPS61173514A (en) * | 1985-01-29 | 1986-08-05 | Matsushita Electric Ind Co Ltd | Signal processing circuit |
| JPS61224446A (en) * | 1985-03-29 | 1986-10-06 | Fujitsu Ltd | Semiconductor integrated circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10201710B4 (en) * | 2001-01-18 | 2016-11-10 | Fuji Electric Co., Ltd. | A physical size semiconductor sensor having adjustment pads for digital adjustment of a sensor output signal and method of making the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2829994B2 (en) | 1998-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6188538A (en) | Semiconductor device | |
| JPH02140964A (en) | Semiconductor integrated circuit | |
| JPH04192350A (en) | Semiconductor integrated circuit device | |
| JPS6362898B2 (en) | ||
| JPH04349640A (en) | Analog-digital hybrid integrated circuit device package | |
| JPH02226753A (en) | Multichip package | |
| JPH03175702A (en) | Semiconductor integrated circuit | |
| JPS5963744A (en) | Semiconductor device | |
| JPS6028255A (en) | Semiconductor device | |
| JPH03167872A (en) | Lead frame semiconductor device | |
| JPH1197473A (en) | Semiconductor device manufacturing method and semiconductor device | |
| JP3068515B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP2522455B2 (en) | Semiconductor integrated circuit device | |
| JP2518253B2 (en) | Semiconductor integrated circuit and manufacturing method thereof | |
| JPH0630379B2 (en) | Master slice type semiconductor device | |
| JPH03276746A (en) | High frequency semiconductor device | |
| JPH03263341A (en) | High frequency high power transistor | |
| JPH02306650A (en) | semiconductor equipment | |
| JPS62293748A (en) | Semiconductor integrated circuit device | |
| JPH08264673A (en) | Integrated circuit device | |
| JPH04199670A (en) | Ic package lead frame | |
| JPH04332151A (en) | Layout of semiconductor integrated circuit | |
| JPS61160951A (en) | Ic device | |
| JPH02306651A (en) | semiconductor equipment | |
| JPH08288460A (en) | Externally controllable bonding method for semiconductor device |