JPH02146423U - - Google Patents
Info
- Publication number
- JPH02146423U JPH02146423U JP5620889U JP5620889U JPH02146423U JP H02146423 U JPH02146423 U JP H02146423U JP 5620889 U JP5620889 U JP 5620889U JP 5620889 U JP5620889 U JP 5620889U JP H02146423 U JPH02146423 U JP H02146423U
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- susceptor
- flow
- vapor phase
- inner diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Description
第１図は原料ガス流規制用の円筒形の管を設置
した本考案による縦型気相成長装置の一実施例を
示す縦断面図、第２図は原料ガス流規制によるガ
ス流寄生手段を設置したバレル型気相成長装置の
一実施例を示す縦断面図、第３図は原料ガス流規
制によるガス流制御手段を設置した横型気相成長
装置の一実施例を示す縦断面図、第４図は従来の
縦型気相成長装置の一実施例を示す縦断面図、第
５図はウエハの膜厚面内分布の測定点を示すウエ
ハの平面図、第６図は本実施例によるガス流規制
手段を設けていない従来装置による２インチウエ
ハの膜厚面内分布図、第７図は膜厚と挿入管内径
との関係を説明する特性図、第８図は本実施例に
よるガス流規制手段を設けた本装置例による２イ
ンチウエハの膜厚面内分布図である。
１１は反応管、１４はサセプタ、１５は基板、
１８は円筒体、２０は加熱手段、ｄは円筒体の内
径、Ｄ１は反応管の内径、Ｄ２はサセプタの外径
である。
Fig. 1 is a vertical sectional view showing an embodiment of the vertical vapor phase growth apparatus according to the present invention, in which a cylindrical tube for regulating the flow of raw material gas is installed, and Fig. 2 shows a parasitic means for gas flow by regulating the flow of raw material gas. FIG. 3 is a vertical sectional view showing an embodiment of the installed barrel-type vapor phase growth apparatus, and FIG. Fig. 4 is a vertical cross-sectional view showing an example of a conventional vertical vapor phase growth apparatus, Fig. 5 is a plan view of a wafer showing measurement points of the in-plane film thickness distribution of the wafer, and Fig. 6 is a wafer according to this embodiment. Figure 7 is a diagram showing the in-plane film thickness distribution of a 2-inch wafer using a conventional device without gas flow regulating means. Figure 7 is a characteristic diagram explaining the relationship between film thickness and inner diameter of the insertion tube. FIG. 3 is an in-plane film thickness distribution diagram of a 2-inch wafer using this example of the apparatus provided with a flow regulating means. 11 is a reaction tube, 14 is a susceptor, 15 is a substrate,
18 is a cylindrical body, 20 is a heating means, d is an inner diameter of the cylindrical body, D1 is an inner diameter of a reaction tube, and D2 is an outer diameter of a susceptor.
Claims (1)
管内にこれを同軸上に設けられる円筒形状のサセ
プタに保持した基板表面に対して反応ガスを垂直
に供給して基板上に結晶成長を行なう縦型気相成
長装置において、 上記反応管とサセプタとの間に、反応ガスの流
れを規制して、基板表面を流れるガス流の流速を
一定にする円筒体を上記軸上に設け、 上記円筒体の内径がサセプタの外径の１１５％
以上で、上記反応管の内径の９０％以下の大きさ
を持つ ことを特徴とする縦型気相成長装置。[Claims for Utility Model Registration] A reaction tube and a heating means are arranged vertically, and a reaction gas is supplied perpendicularly to the surface of a substrate held by a cylindrical susceptor provided coaxially within the reaction tube. In a vertical vapor phase growth apparatus for growing crystals on a substrate, a cylindrical body is provided between the reaction tube and the susceptor to regulate the flow of the reaction gas and keep the flow rate of the gas flow on the substrate surface constant. The inner diameter of the cylindrical body is 115% of the outer diameter of the susceptor.
The above provides a vertical vapor phase growth apparatus characterized in that the size is 90% or less of the inner diameter of the reaction tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5620889U JPH02146423U (en) | 1989-05-16 | 1989-05-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5620889U JPH02146423U (en) | 1989-05-16 | 1989-05-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02146423U true JPH02146423U (en) | 1990-12-12 |
Family
ID=31579831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5620889U Pending JPH02146423U (en) | 1989-05-16 | 1989-05-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02146423U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003048413A1 (en) * | 2001-12-03 | 2003-06-12 | Ulvac, Inc. | Mixer, and device and method for manufacturing thin-film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63192228A (en) * | 1987-02-04 | 1988-08-09 | Mitsubishi Electric Corp | Semiconductor thin film forming equipment |
-
1989
- 1989-05-16 JP JP5620889U patent/JPH02146423U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63192228A (en) * | 1987-02-04 | 1988-08-09 | Mitsubishi Electric Corp | Semiconductor thin film forming equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003048413A1 (en) * | 2001-12-03 | 2003-06-12 | Ulvac, Inc. | Mixer, and device and method for manufacturing thin-film |
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