JPH02148647A - Ion source cleaning jig for ion implantation device and cleaning method - Google Patents

Abstract

PURPOSE:To enable the removal of accumulated materials and insulating layers in an ion source with requiring no detaching of each ion source part for cleaning and without exposing the inner part of an ion source chamber to the atmosphere for a long time by using a detachable ion source cleaning electrode, a high frequency power source, and a gas leak system. CONSTITUTION:An ion source chamber 4 is provided with a bushing 5, an extraction electrode 1 supported by an electrode support 2, and a detachable ion source cleaning electrode 6 in the inside, and a high frequency power source 8 feeding a high frequency voltage to the electrodes 6, 1, and a gas leak system 7 are provided therein. Ar gas is introduced from the gas leak system 7, the degree of vacuum in the ion source chamber 4 is maintained at about 200m Torr, and a power of several 100W is applied to the electrode support 2 from the high frequency power source 8. Hence, a plasma discharge occurs between the electrode support 2 and the extraction electrode 1 and the ion source cleaning electrode 6, the accumulated materials and insulating layers on the electrode support 2 and extraction electrode 1 surfaces can physically be pattered and removed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor manufacturing equipment, particularly to a cleaning jig and method for cleaning an ion source of an ion implantation device.

[Conventional technology]

Conventionally, the ion source of this type of ion implantation apparatus has a configuration as shown in FIG. This was a method in which the extraction electrode 1 and other parts were removed from the apparatus, and the deposits and insulating layer that had adhered to their surfaces were mechanically removed.

[Problem to be solved by the invention]

The ion source section of the ion implantation apparatus easily generates deposits and insulating layers on the surfaces of the extraction electrode and the electrode support by generating plasma in the ion source head and extracting the plasma by the extraction electrode. Once these are formed, the interaction of the electric field and plasma between the source head and the extraction electrode causes a discharge to occur between the source head and the extraction electrode. Therefore, it is necessary to periodically clean the inside of the ion source.

In conventional ion source cleaning methods, the ion source is exposed to the atmosphere for a long period of time in order to remove each component of the ion source and perform mechanical cleaning such as grinding the surface with plaster or sanding. It takes time to vacuum. In addition, residual gas (especially H,
O) If fluorine gas plasma is generated before the partial pressure decreases, an insulating layer such as fluorocarbon polymer will form on the surface of the extraction electrode in a short period of time, causing the electrode to lose its conductivity and cause damage inside the ion source. This has the disadvantage that it becomes necessary to carry out the cleaning operation again because discharge is more likely to occur. Further, the deposit 8 insulating layer adhering to the ion source portion is often a very harmful substance, and mechanical cleaning thereof poses a major safety problem.

An object of the present invention is to provide an ion source cleaning jig and a cleaning method for an ion implantation apparatus that solve the above problems.

[Differences between the invention and the prior art]

The present invention differs from the conventional ion source cleaning method described above in that the ion source head can be electrically and physically cleaned within the ion source by using an ion source cleaning electrode and a high frequency power source.

[Means to solve the problem]

In order to achieve the above object, the ion source cleaning jig for an ion implanter according to the present invention includes a detachable cleaning electrode and a power source for applying a high frequency voltage to the electrode in the ion source section of the ion implanter. , a gas leak system.

Further, in the ion source cleaning method for an ion implantation apparatus according to the present invention, plasma discharge is generated inside the ion source to electrically and physically clean the ion source portion.

〔Example〕

Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is a longitudinal sectional view showing an embodiment of the present invention.

In the figure, an ion source chamber 4 includes a bushing 5, an extraction electrode 1 supported by an electrode support 2, and a removable ion source cleaning electrode 6, and a high frequency voltage is applied to the electrodes 1 and 6. Equipped with a high frequency power supply 8 that supplies gas and a gas leak system 7 (1!i
This is what I did.

After the ion source chamber 4 is brought to atmospheric pressure and the ion source head 3 is removed, the ion source cleaning electrode 6 is attached, and the ion source chamber 4 is evacuated. The ion source cleaning electrode 6 is shaped to maintain a distance of about 50 to 80 cm from the electrode support 2 and the extraction electrode 1.

Ar gas is introduced from the gas leak system 7, the degree of vacuum in the ion source chamber 4 is maintained at about 200+ etorr, and power of about several 100 W is applied to the electrode support 2 from the high frequency power source 8.

As a result, plasma discharge occurs between the electrode support 2 and extraction electrode 1 and the ion source cleaning electrode 6, and as a result, deposits on the surfaces of the electrode support 2 and extraction electrode 1 are removed.

It becomes possible to physically sputter and remove the insulating layer.

〔Effect of the invention〕

As explained above, by using an ion source cleaning electrode, a high frequency power source, and a gas leak system, the present invention eliminates the need to remove each part of the ion source and mechanically clean them, and the interior of the ion source chamber can be cleaned for a long time. This has the effect of removing deposits and insulating layers inside the ion source without exposing it to the atmosphere for a long time.

[Brief explanation of the drawing]

FIG. 1 is a vertical cross-sectional view showing one embodiment of the present invention, and FIG. 2 is a vertical cross-sectional view showing a conventional example. 1...Extraction"S ff2...Electrode support 3...Ion source head 4...Ion source chamber 5...Bushing 6...Ion source cleaning electrode 7...Gas leak system 8. ...High frequency power supply d''! , Nigekyu Traction Electric 21ζ Support 4: Ionzo Switch〉/8'-5 Nib], Sink'' 6: Door Electric Kit 7: Gamata Leak System a; High Frequency → Skin Denkaku Figure 1 Figure 2

Claims (2)

[Claims] (1) A removable cleaning electrode in the ion source section of the ion implantation device, and a power source that applies a high frequency voltage to the electrode;
An ion source cleaning jig characterized by having a gas leak system. (2) An ion source cleaning method characterized by generating plasma discharge inside the ion source to electrically and physically clean the ion source section.