JPH02155232A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPH02155232A JPH02155232A JP30893388A JP30893388A JPH02155232A JP H02155232 A JPH02155232 A JP H02155232A JP 30893388 A JP30893388 A JP 30893388A JP 30893388 A JP30893388 A JP 30893388A JP H02155232 A JPH02155232 A JP H02155232A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- hydrochloric acid
- etching solution
- etching
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical group Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 48
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 8
- 239000011733 molybdenum Substances 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052787 antimony Inorganic materials 0.000 abstract description 9
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract description 9
- FAPDDOBMIUGHIN-UHFFFAOYSA-K antimony trichloride Chemical compound Cl[Sb](Cl)Cl FAPDDOBMIUGHIN-UHFFFAOYSA-K 0.000 abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
１！よ例秤反九夏
本発明は塩酸系エツチング液を使用したエツチング方法
に関する。[Detailed description of the invention] 1! The present invention relates to an etching method using a hydrochloric acid etching solution.
の び べき
半導体チップの製造には現在種々のエツチング法が使用
されている０例えば、ショットキバリアダイオードでは
、Ｍｏ（モリブデン）から成る第一の金属層の上面に他
の金属材料から成る第二の金属層を形成し、第二の金属
層の一部をエツチングで選択的に除去することがある。Various etching methods are currently used to manufacture semiconductor chips that can be expanded. For example, in a Schottky barrier diode, a second metal layer made of another metal material is etched on the top surface of a first metal layer made of Mo (molybdenum). A metal layer may be formed and a portion of the second metal layer may be selectively removed by etching.
この場合、エツチング液としては第二の金属層を溶解し
、Ｍ。In this case, the etching solution dissolves the second metal layer and M.
から成る第一の金属層を溶解しないことが要求される。It is required not to dissolve the first metal layer consisting of.
周知のように、Ｍｏは塩酸及び弗酸に不溶である。した
がって、従来では塩酸系又は弗酸系エツチング液を使用
していた。しかしながら、ＭＣＩ（塩酸）とＨｉｓ２（
過酸化水素）とを混合して成る塩酸系エツチング液では
、Ｍｏから成る第一の金属層を若干エツチングする欠点
がある。また。As is well known, Mo is insoluble in hydrochloric acid and hydrofluoric acid. Therefore, conventionally, hydrochloric acid or hydrofluoric acid etching solutions have been used. However, MCI (hydrochloric acid) and His2 (
A hydrochloric acid-based etching solution mixed with hydrogen peroxide (hydrogen peroxide) has the disadvantage that it slightly etches the first metal layer made of Mo. Also.
ＨＦ（弗酸）とＨ，Ｏ，とを混合して成る弗酸系エツチ
ング液は浸透性が強く、ピンホール等があると、第一の
金属層を通過して所望しない下層までエツチングして製
品不良の原因となる。このように、全く問題のない実用
的な化学的エツチング法を見出せないのが実状である。Hydrofluoric acid-based etching solution, which is a mixture of HF (hydrofluoric acid), H, and O, has strong permeability, and if there is a pinhole, it will pass through the first metal layer and etch into an undesired lower layer. This may cause product defects. As described above, the reality is that no practical chemical etching method can be found that is completely problem-free.
そこで、本発明は上記の問題を解決するエツチング方法
を提供することを目的とする。Therefore, an object of the present invention is to provide an etching method that solves the above problems.
る二めの
本発明のエツチング方法によれば、モリブデンを主成分
とする第一の金属層の主面に塩酸系のエツチング液で溶
解可能な第二の金属層を形成した被エツチング材を用意
し、アンチモンを含む塩酸系エツチング液で第一の金属
層を実質的に除去せずに第二の金屑層の一部又は全部を
選択的に除去する。According to the second etching method of the present invention, a material to be etched is prepared in which a second metal layer that can be dissolved in a hydrochloric acid-based etching solution is formed on the main surface of a first metal layer containing molybdenum as a main component. Then, a part or all of the second gold scrap layer is selectively removed using a hydrochloric acid-based etching solution containing antimony without substantially removing the first metal layer.
遭Ｌｌ
アンチモンを含む塩酸系のエツチング液は、塩酸系エツ
チング液に溶解する第二の金属層を溶解する作用がある
反面、モリブデンを主成分とする第一の金属層を実質的
に溶解しない、したがって。Although the hydrochloric acid-based etching solution containing antimony has the effect of dissolving the second metal layer that dissolves in the hydrochloric acid-based etching solution, it does not substantially dissolve the first metal layer whose main component is molybdenum. therefore.
第一の金属層を実質的に除去することなく塩酸系エツチ
ング液に溶解する第二の金属層の一部又は全部を選択的
に除去することができる。Part or all of the second metal layer dissolved in the hydrochloric acid etching solution can be selectively removed without substantially removing the first metal layer.
夾−１−涯 第１図について本発明の一実施例を以下に説明する。Kyo-1-gai An embodiment of the invention will now be described with reference to FIG.
本実施例のショットキバリアダイオードは、第１図（ｄ
）に示すように、半導体基体（１）と、その上面（主面
）に形成されたシリコン酸化膜（２）と、バリア電極と
してのＭｏ（モリブデン）層（３）と、接続電極として
のＮｉにッケル）層（４）とを有する。The Schottky barrier diode of this example is shown in Figure 1 (d
), a semiconductor substrate (1), a silicon oxide film (2) formed on its upper surface (principal surface), a Mo (molybdenum) layer (3) as a barrier electrode, and a Ni layer as a connection electrode. nickel) layer (4).
第１図（ｄ）のショットキバリアダイオードを形成する
には、まず、第１図（ａ）に示すように、選択的にシリ
コン酸化膜（２）の形成されたｎ形シリコンから成る半
導体基体（１）の上面全体に、第一の金属層としてのＭ
ｏ層（３）と、第二の金属層としてのＮｉ層（４）とを
真空蒸着で順次形成して被エツチング材を得る。次に、
第１図（ｂ）に示すように、残存すべきＮｉ層（４）の
上面にフォトレジスト（５）を形成し、フォトレジスト
（５）で被覆されないＮｉ層（４）をエツチングで除去
する０本実施例では、Ｎｉ層（４）のエツチングに使用
するエツチング液として従来と異なり、ｓｂ（アンチモ
ン）を含む塩酸系エツチング液を使用する点に注意すべ
きである。即ち、本実施例のエツチング液は、濃度３６
重量％のＨＣＩ（塩酸）５０＋＊Ｑと、Ｈ２Ｏ（水）１
０ｏｍＩｌと、濃度３１重量％のＨ２Ｏ２（過酸化水素
） ２ｍＩ２から成る塩酸系エツチング液に５ｇの５ｂ
Ｃ１，（塩化アンチモン）を含有させて成る。したがっ
て、本実施例のエツチング液は容量比でＨＣＩ ： Ｈ
，Ｏ：Ｈ２Ｏ，＝５０：１００：２の塩素系エツチング
液ＩＱにつき約３３ｇの５ｂｃｔ、（塩化アンチモン）
を含有している。To form the Schottky barrier diode shown in FIG. 1(d), first, as shown in FIG. 1(a), a semiconductor substrate made of n-type silicon on which a silicon oxide film (2) is selectively formed ( 1) M as the first metal layer on the entire top surface
A material to be etched is obtained by sequentially forming an O layer (3) and a Ni layer (4) as a second metal layer by vacuum evaporation. next,
As shown in FIG. 1(b), a photoresist (5) is formed on the upper surface of the Ni layer (4) to remain, and the Ni layer (4) that is not covered with the photoresist (5) is removed by etching. It should be noted that in this embodiment, unlike the conventional etching solution, a hydrochloric acid-based etching solution containing sb (antimony) is used for etching the Ni layer (4). That is, the etching solution of this example has a concentration of 36
Weight % of HCI (hydrochloric acid) 50+*Q and H2O (water) 1
5 g of 5b was added to a hydrochloric acid etching solution consisting of 0 ml and 2 ml of H2O2 (hydrogen peroxide) with a concentration of 31% by weight.
C1, (antimony chloride). Therefore, the etching solution of this example has a volume ratio of HCI:H
Approximately 33 g of 5 bct (antimony chloride) per chlorine-based etching solution IQ, O:H2O, = 50:100:2.
Contains.
本実施例のエツチング液によれば、エツチング温度を３
０℃としたとき、厚さ約５０００人のＮｉ層（４）のエ
ツチングを約３分３５秒で完了することができた。また
、厚さ約３０００人のＭｏ層（３）は、３０分の時間を
費やしても実質的にエツチングされなかった。According to the etching solution of this example, the etching temperature was increased to 3.
At 0° C., etching of the Ni layer (4) with a thickness of about 5,000 layers could be completed in about 3 minutes and 35 seconds. Further, the Mo layer (3) having a thickness of approximately 3000 was not substantially etched even after 30 minutes.
前記の表に示すエツチング試験の結果から明らかなよう
に、試料番号■に示す従来のエツチング液はＮｉ層（４
）を短時間でエツチングできるが、Ｎｉ層（４）とＭｏ
層（３）とのエッチレート（エツチング時間）の差が小
さく実用上望ましくない。As is clear from the etching test results shown in the table above, the conventional etching solution shown in Sample No.
) can be etched in a short time, but the Ni layer (4) and Mo
The difference in etch rate (etching time) with layer (3) is small, making it undesirable for practical use.
また、試料番号■に示す従来のエツチング液はＮｉ層（
４）を短時間でエツチングし、かつＭａｉｌ（３）を実
質的にエツチングしない点では望ましい、しかし、この
エツチング液は浸透性が強いため、Ｍｏ層（３）にピン
ホール等があると、そこからエツチング液が浸入してシ
リコン酸化膜（２）を浸食し、Ｍｏ層（３）をシリコン
酸化ＩＩ （２）から剥離させる難点のあることが判明
した。In addition, the conventional etching solution shown in sample number ■ has a Ni layer (
4) in a short time and does not substantially etch Mail (3). However, this etching solution has strong permeability, so if there are pinholes etc. in the Mo layer (3), it will be etched there. It has been found that there is a problem in that the etching solution penetrates and erodes the silicon oxide film (2), causing the Mo layer (3) to peel off from the silicon oxide II (2).
試料番号■に示す本実施例の塩酸系エツチング液はｓｂ
を含有するため、Ｎｉ層（４）を比較的短時間でエツチ
ングし、かつ、Ｍｏ層（３）を実質的にエツチングしな
い、更に、このエツチング液は実質的にＭｏ層（３）に
浸透しないし塩酸系のエツチング液のためシリコン半導
体基体（１）及びシリコン酸化膜（２）を浸食しない。The hydrochloric acid-based etching solution of this example shown in sample number ■ is sb.
The etching solution etches the Ni layer (4) in a relatively short time and does not substantially etch the Mo layer (3), and furthermore, this etching solution does not substantially penetrate into the Mo layer (3). Since it is a hydrochloric acid based etching solution, it does not corrode the silicon semiconductor substrate (1) and the silicon oxide film (2).
また、Ｈ，０２の含有量を変えることにより、Ｎｉ層（
４）のエツチング時間をｗ！４！Ｓ１できる。Ｈ２Ｏ２
の含有量を１．５履旦としたときは、Ｎｉ層（４）のエ
ツチング時間が増加して約４分となることが確認できた
。In addition, by changing the content of H,02, the Ni layer (
4) Etching time lol! 4! I can do S1. H2O2
It was confirmed that when the content of Ni layer (4) was set to 1.5 mm, the etching time of the Ni layer (4) increased to about 4 minutes.
Ｎ、を層（４）のエツチング完了後、フォトレジスト（
５）を除去して、別のフォトレジスト（６）をＮｉ層（
４）の上面と残存すべきＭｏ層（３）の上面に塗布し１
周知の硝酸系のエツチング液でＭｏ層（３）を第１図（
ｃ）のように除去する。After completing the etching of layer (4) of N, photoresist (
5) is removed and another photoresist (6) is applied to the Ni layer (
4) Coat the top surface and the top surface of the Mo layer (3) that should remain.
The Mo layer (3) was etched using a well-known nitric acid etching solution as shown in Figure 1 (
Remove as in c).
更に、フォトレジスト（６）を除去して第１図（ｄ）に
示すショットキバリアダイオードを得る６上述のように
、本実施例は半導体素子において、Ｍｏ層（３）の上面
に形成されたＮｉ層（４）を選択的にエツチングする方
法として最適である。Furthermore, the photoresist (6) is removed to obtain the Schottky barrier diode shown in FIG. This method is most suitable for selectively etching layer (4).
また、アンチモンを含有した塩酸系エツチング液を得る
には種々の方法があるが、塩酸系エツチング液であるか
ら、塩酸系エツチング液に塩化アンチモンの形でアンチ
モンを加えて得るのがよい。There are various methods for obtaining a hydrochloric acid etching solution containing antimony, but since it is a hydrochloric acid etching solution, it is best to obtain it by adding antimony in the form of antimony chloride to the hydrochloric acid etching solution.
塩酸系のエツチング液中のアンチモンの含有量は少なす
ぎるとＮｉ層（４）とＭｏ層（３）のエッチレートが小
さくなり、また、多すぎるとアンチモンがエツチング液
に良好に溶解しない、したがって、アンチモンの含有量
は５ｂＣ１３に換算して塩酸系エツチング液ＩＱにつき
１０〜６０ｇ望ましくは２０〜５０ｇ含有させるのがよ
い。If the antimony content in the hydrochloric acid-based etching solution is too low, the etch rate of the Ni layer (4) and Mo layer (3) will be low, and if it is too large, antimony will not dissolve well in the etching solution. The content of antimony is preferably 10 to 60 g, preferably 20 to 50 g, in terms of 5bC13 per hydrochloric acid etching solution IQ.
上記の実施例では本発明をショットキバリアダイオード
について説明したが、ショットキバリアダイオード以外
の半導体装置や半導体装置以外のエツチングにも有効で
ある。In the above embodiments, the present invention has been explained with respect to a Schottky barrier diode, but it is also effective for etching semiconductor devices other than Schottky barrier diodes and semiconductor devices other than semiconductor devices.
見肚座級来
上述のように、本発明によればモリブデンを主成分とす
る第一の金属層を実質的にエツチングせずに、モリブデ
ン以外を主成分としかつ塩素系エツチング液でエツチン
グ可能な第二の金属層を選択的かつ良好にエツチング除
去できる。したがって、半導体装置の製造等に大きな工
業的利益が得られる。As mentioned above, according to the present invention, the first metal layer containing molybdenum as a main component can be etched with a chlorine-based etching solution that has a main component other than molybdenum without substantially etching it. The second metal layer can be selectively and efficiently etched away. Therefore, great industrial benefits can be obtained in the manufacture of semiconductor devices and the like.
第１図はショットキバリアダイオードの製造状態を示す
工程図である。
（１）、、半導体基体、 （２）、、シリコン酸化膜
、 （３）、、ＭＯ層（第一の金属層）、（４）、、
Ｎｉ層（第二の金属層）、
特許出願人 サンケン電気株式会社
代 理 人 清水陽−（ほか１名）FIG. 1 is a process diagram showing the manufacturing state of a Schottky barrier diode. (1), Semiconductor substrate, (2), Silicon oxide film, (3), MO layer (first metal layer), (4),
Ni layer (second metal layer), Patent applicant Sanken Electric Co., Ltd. Agent Yo Shimizu (and one other person)
Claims (1)
のエッチング液で溶解可能な第二の金属層を形成した被
エッチング材を用意し、アンチモンを含む塩酸系エッチ
ング液で第一の金属層を実質的に除去せずに第二の金属
層の一部又は全部を選択的に除去することを特徴とする
エッチング方法。A material to be etched is prepared, in which a second metal layer that can be dissolved in a hydrochloric acid-based etching solution is formed on the main surface of a first metal layer containing molybdenum as a main component. An etching method characterized by selectively removing part or all of the second metal layer without substantially removing the metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30893388A JPH02155232A (en) | 1988-12-08 | 1988-12-08 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30893388A JPH02155232A (en) | 1988-12-08 | 1988-12-08 | Etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02155232A true JPH02155232A (en) | 1990-06-14 |
| JPH0519301B2 JPH0519301B2 (en) | 1993-03-16 |
Family
ID=17987019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30893388A Granted JPH02155232A (en) | 1988-12-08 | 1988-12-08 | Etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02155232A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6997985B1 (en) | 1993-02-15 | 2006-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103617952B (en) * | 2013-11-29 | 2016-08-17 | 中国电子科技集团公司第四十七研究所 | Diode wet etching method |
-
1988
- 1988-12-08 JP JP30893388A patent/JPH02155232A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6997985B1 (en) | 1993-02-15 | 2006-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0519301B2 (en) | 1993-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH02209729A (en) | Manufacture of semiconductor device and apparatus for removing foreign substance | |
| US3867218A (en) | Method of etching a pattern in a silicon nitride layer | |
| US3909325A (en) | Polycrystalline etch | |
| US3751314A (en) | Silicon semiconductor device processing | |
| JPH02155232A (en) | Etching method | |
| US4040893A (en) | Method of selective etching of materials utilizing masks of binary silicate glasses | |
| JPH10233382A (en) | Semiconductor surface cleaning method | |
| US3953266A (en) | Process for fabricating a semiconductor device | |
| JP2001319914A (en) | Method for manufacturing semiconductor device | |
| JPS6262457B2 (en) | ||
| JPS5881973A (en) | Method for etching gold-germanium alloy film | |
| JPH06287775A (en) | Method for etching ti | |
| JPS5867078A (en) | Manufacture of compound semiconductor device | |
| JPS5847851B2 (en) | Method for manufacturing a semiconductor device having a titanium layer | |
| US3598669A (en) | Method of rapidly etching silicon nitride in manufacture of semiconductor devices | |
| JPS60128635A (en) | Forming process of element isolation region | |
| JPH01297822A (en) | Manufacture of semiconductor device | |
| JPH0897182A (en) | Method for etching PSG film of semiconductor device | |
| JPH01232744A (en) | Manufacture of semiconductor device | |
| JPS5929139B2 (en) | Manufacturing method of semiconductor device | |
| JPS6046023A (en) | Manufacture of semiconductor device | |
| JPH0276224A (en) | Manufacture of compound semiconductor device | |
| JPS61256719A (en) | Manufacture of semiconductor device | |
| JPH09232255A (en) | Compound semiconductor device and manufacturing method thereof | |
| JPH03165515A (en) | How to form contacts |