JPH02186312A - auto focus illumination device - Google Patents

auto focus illumination device

Info

Publication number
JPH02186312A
JPH02186312A JP1006744A JP674489A JPH02186312A JP H02186312 A JPH02186312 A JP H02186312A JP 1006744 A JP1006744 A JP 1006744A JP 674489 A JP674489 A JP 674489A JP H02186312 A JPH02186312 A JP H02186312A
Authority
JP
Japan
Prior art keywords
optical system
driving means
detecting means
detecting
focusing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1006744A
Other languages
Japanese (ja)
Other versions
JP3120176B2 (en
Inventor
Hisashi Isozaki
久 磯崎
Kiyobumi Suzuki
清文 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Topcon Corp
Original Assignee
Topcon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Topcon Corp filed Critical Topcon Corp
Priority to JP01006744A priority Critical patent/JP3120176B2/en
Publication of JPH02186312A publication Critical patent/JPH02186312A/en
Application granted granted Critical
Publication of JP3120176B2 publication Critical patent/JP3120176B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automatic Focus Adjustment (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To allow the exact illumination of a surface to be detected by constituting the device in such a manner that the 1st driving means focuses a coupling optical system in accordance with the detection signal of a position detecting means, a moving quantity detecting means detects the moving quantity of the 1st driving means to measure the thickness of the object to be detected and the 2nd driving means focuses a transmission of the moving quantity detecting means. CONSTITUTION:This device consists of the imagery optical system 1 having the position detecting means for detecting the position of the object 200 to be detected and the transmission illuminating optical system 2 for illuminating this object 200. The imagery optical system 1 is provided with the 1st driving means 15 for focusing the coupling optical system 1 in accordance with the detection signal of the position detecting means 14 and the moving quantity detecting means 16 for detecting the thickness of the object 200 by detecting the moving quantity by the 1st driving means 15. The transmission illuminating optical system 2 is provided with the 2nd driving means 23 for focusing the transmission illuminating optical system 2 in accordance with the detection signal of the moving quantity detecting means 16. The inspection of a semiconductor mask 200 is exactly and efficiently executed in this way under the optimum conditions without deviating the illuminating position.

Description

【発明の詳細な説明】 「産業上の利用分野」 本発明は半導体マスク等の検査装置に使用する照明装置
に係わり、特に、被検物の厚みを正確に把題し、被検物
の厚みに応じて透過照明光学系の合焦を自動的に行うこ
とのできる自動合焦照明装置に関するものである。
Detailed Description of the Invention: "Industrial Application Field" The present invention relates to an illumination device used in an inspection device for semiconductor masks, etc., and in particular, the present invention relates to an illumination device used in an inspection device for semiconductor masks, etc. The present invention relates to an automatic focusing illumination device that can automatically focus a transmitted illumination optical system according to the conditions.

「従来の技術」 従来の半導体マスク等の検査装置に搭載されていた照明
装置は、検査やlt察を行う結像光学系は焦点を自動的
に合わせることのできる自動合焦機能が採用されていた
。しかし、被検物を照明するための透過照明光学系には
、自動合焦fll#tは採用されていなかった。そこで
半導体マスク等の検査を行う前に、まず、被検物に対す
る結像光学系の合焦を行い、yg過照明光学系の調整は
、被検物の厚み、屈折率等めパラメータを与え、このパ
ラメータに対応する位置に透過照明系の移動させること
により行っていた。即ち1個々の被検物に対して合焦操
作を行うのでなく、各種パラメータから得られた所定の
合焦位置に透過照明光学系を移動させて調整を行ってい
た。
"Conventional technology" In the illumination devices installed in conventional inspection equipment for semiconductor masks, etc., the imaging optical system used for inspection and inspection has an automatic focusing function that can automatically adjust the focus. Ta. However, automatic focusing fll#t has not been adopted in the transmitted illumination optical system for illuminating the test object. Therefore, before inspecting a semiconductor mask, etc., the imaging optical system is first focused on the object to be inspected, and the YG over-illumination optical system is adjusted by giving parameters such as the thickness and refractive index of the object. This was done by moving the transmitted illumination system to a position corresponding to this parameter. That is, instead of performing a focusing operation for each individual object, adjustment is performed by moving the transmitted illumination optical system to a predetermined focusing position obtained from various parameters.

「発明が解決しようとする課毬」 )−かしながら上記従も型の半導体マスク等力検査装置
に使用する照明り:置は、小型の被検1ダに対しては、
設定条件の透過照明位置でも実用上十分の均一な透過照
明を行うことができたが、比較的大型の被検物を検査す
る場合には、被検物が自重によって撓んでしまうので、
所定の透過照明位置では、均一な透過照明が行えないと
いう問題点が鳥うた。特に比較的大きなレクチル等を検
査する場合には、レクチル等の自重により数百μmの単
位で撓んでしまうため、レクチル等の厚みのみで例えば
ケーラータイプの透過照明系の照明位置を設定してしま
うと、合焦ri置が照明め最良の位置から外れてしまう
という深刻な間と点があった。
"Problems to be Solved by the Invention") - However, the illumination used in the above-mentioned secondary type semiconductor mask force inspection device is
Although we were able to achieve a sufficiently uniform transmitted illumination for practical use even at the transmitted illumination position under the set conditions, when inspecting a relatively large object, the object would bend due to its own weight.
The problem is that uniform transillumination cannot be achieved at a predetermined transillumination position. Especially when inspecting a relatively large reticle, etc., the reticle, etc. will bend by several hundred μm due to its own weight, so the illumination position of a Koehler-type transmitted illumination system, for example, must be set based only on the thickness of the reticle, etc. Then, there was a serious moment where the focus position deviated from the best position for illumination.

二のなめ透過照明光学系にも、別個の自動合焦装置を装
備させることも考えられるが1位置検出手段を結合光学
系とは別体に設けなければならず。
Although it is conceivable to equip the second diagonal transmission illumination optical system with a separate automatic focusing device, the first position detection means must be provided separately from the coupling optical system.

装置が複雑化してコストが上がり、装置全体の小型化を
図ることができないという問題点があった。
There were problems in that the device became complicated, the cost increased, and the overall size of the device could not be reduced.

「課題を解決するための手段」 本発明は上記all!に鴬み案出されたもので、*検物
の位置を検出するための位置検出手段を有する結像光学
系と、この被検物を照明するための透過照明光学系とか
らなり、結像光学系には、前記位置検出手段の検出信号
に基き、結合光学系を合焦させるための第1の駆動手段
と、この第1の駆動手段による移動量を検出し、被検物
の厚みを検出するための移動量検出手段とが備えられて
おり。
"Means for Solving the Problems" The present invention covers all of the above! *It consists of an imaging optical system with a position detection means for detecting the position of the specimen, and a transmitted illumination optical system for illuminating the specimen. The optical system includes a first drive means for focusing the coupling optical system based on the detection signal of the position detection means, and detects the amount of movement by the first drive means to determine the thickness of the object. It is equipped with a movement amount detection means for detection.

前記透過照明光学系には、FJ記記動動量検出手段検出
信号に基き、前記透過照明光学系の合焦を行うための第
2の駆動手段が備えられていることを特徴としている。
The transmitted illumination optical system is characterized in that it is equipped with a second driving means for focusing the transmitted illumination optical system based on the detection signal of the FJ recorded movement amount detection means.

Crf!用ノ 以上の櫟に構成された本発明は、第1の駆動手段が位置
検出手段の検出信号に基き、結合光学系を合焦させる。
Crf! In the present invention, the first driving means focuses the coupling optical system based on the detection signal of the position detection means.

そして移動量検出手段が第1の駆動手段の移動量を検出
しJl!検物の厚みを計測する。更に第2の駆動手段が
前記移動量検出手段の検出信号に基き、透過照明系を合
焦させるようになっている。
Then, the movement amount detection means detects the movement amount of the first drive means and Jl! Measure the thickness of the specimen. Further, a second driving means focuses the transmitted illumination system based on a detection signal from the movement amount detecting means.

「実j1例」 本発明の一実施例を図面に基いて説明する。第1図は本
実施例の自動合焦装置の構成を示すもので、自動合焦!
装置は結像光学系1と透過照明系2の2つの光学系を有
している。結合光学系1は。
“First Practical Example” An example of the present invention will be described based on the drawings. Figure 1 shows the configuration of the automatic focusing device of this embodiment.Automatic focusing!
The apparatus has two optical systems: an imaging optical system 1 and a transmitted illumination system 2. The coupling optical system 1 is.

発光部11と反射部材121〜124と、受光部1)と
3位置検出手段14と、第1の駆動[15と、移動量検
出部16とからなっている。5!光部11は、赤外線や
レーザー光線を放射させるためのもので、赤外LEDや
半導体レーザー等が採用される。この発光部11から放
射された光線は。
It consists of a light emitting section 11, reflecting members 121 to 124, a light receiving section 1), a three-position detecting means 14, a first drive [15], and a movement amount detecting section 16. 5! The light section 11 is for emitting infrared rays or laser beams, and employs an infrared LED, a semiconductor laser, or the like. The light rays emitted from this light emitting section 11 are as follows.

第1の反射部材121と第2の反射部材122で反射さ
れ、被検物200の被検面に斜めに照射される。被検?
v200の被検面で反射された光線は。
The light is reflected by the first reflecting member 121 and the second reflecting member 122, and is irradiated obliquely onto the test surface of the test object 200. Subject?
The light beam reflected by the test surface of v200 is.

第3の反射部材123.第4の反射部材124で反射さ
れ、受光部1)に入射されるようになっている。この光
路は、光テコを構成する様になっている。受光部1)は
、入射光から被検物200の被検面の位置を計測するも
のであり1本実施例では半導体装置検出器(PSD)が
採用されている。
Third reflective member 123. The light is reflected by the fourth reflecting member 124 and is made incident on the light receiving section 1). This optical path constitutes an optical lever. The light receiving section 1) measures the position of the surface to be measured of the object 200 based on the incident light, and in this embodiment, a semiconductor device detector (PSD) is employed.

二の半導体装置検出器(PSD)は、この半導体装置検
出1表面における光スポットの輝度中心を出力するため
のものである。
The second semiconductor device detector (PSD) is for outputting the center of brightness of the light spot on the surface of the semiconductor device detection 1.

ニーで、半導体装置検出器(PSD)1)の構造を第3
図に基いて説明する。半導体装置検出器1)は、高抵抗
半導体表面の片面、或は両面に均一な抵抗N1)1が形
成されており、この抵抗層1)1の両端に信号収り出し
用の一対のIE極1)2.1)3が設けられている9表
面層はPN接合を形成しており、光t、*果により光電
流を生成する様に構成されている。
At the knee, the structure of the semiconductor device detector (PSD) 1) is
This will be explained based on the diagram. A semiconductor device detector 1) has a uniform resistance N1)1 formed on one or both sides of a high-resistance semiconductor surface, and a pair of IE electrodes for signal collection at both ends of this resistance layer 1)1. The 9 surface layers provided with 1)2.1)3 form a PN junction and are configured to generate a photocurrent due to the light t, *.

PSDのt極A1)2とt伍B1)3との距離をり、[
抗をRLとし、 ′rtffiA 1)1’う光)入射
位置を丈での距離をX、その部分の抵抗をRにとする。
Calculate the distance between the PSD's t-poles A1)2 and t5B1)3, and calculate [
Let the resistance be RL, the distance in height from the incident position be X, and the resistance of that part be R.

光の入射位置で発生した光生成電荷は、光の入射エネル
ギに比例する光Wla (T o)として抵抗層1)1
に到達す′る。そして光IE流は、それぞれの電極1)
2.1)3までの抵抗値に逆比例する様に分割される。
The photogenerated charge generated at the light incident position is converted into light Wla (T o) proportional to the incident light energy in the resistive layer 1) 1
reach. And the optical IE current is connected to each electrode 1)
2.1) Divided in inverse proportion to the resistance value up to 3.

したがって、t[xA1)2及びt!1ft81)3か
ら収り出せる電流IA E*は次の様に計算される。
Therefore, t[xA1)2 and t! The current IA E* that can be collected from 1ft81)3 is calculated as follows.

!、4 −111      2X となり、抵抗層1)1は均一で、長さと抵抗値!虚比例
すると仮定すれば。
! , 4 -111 2X, and the resistance layer 1) 1 is uniform, and the length and resistance value! Assuming that it is imaginary proportional.

1m=To  ・□ ・ ・ ・ (4) と表すことができる。そして位置信号をPとし。1m=To ・□ ・ ・ ・(4) It can be expressed as. And let the position signal be P.

■、とl、の和と差を計算し、これらを除すれ(i′。■ Calculate the sum and difference of and l, and divide them (i'.

となり、受光位置を計算することができる。Therefore, the light receiving position can be calculated.

本実施例では、これらの原理の検出器を2個装備した2
次元PSDを採用しているが、1次元PSDを採用し、
−次元の位置を計測することもできる。
In this example, two detectors equipped with two detectors based on these principles are used.
Although dimensional PSD is adopted, one-dimensional PSD is adopted,
-It is also possible to measure the position in the dimension.

次に第4図に基いて位置検出部14を説明する。Next, the position detection section 14 will be explained based on FIG.

位置検出#!14は、受光部1)の出力信号から竣検?
1200の被検面の位置を演算するものである9この位
置検出部14は、前置増幅器141と加算用演算器14
2と減算用演算器143と除算用演算器144とからな
っている。前置増幅器141は、PSD1)の出力信号
を増幅するためのものである。第1の前置#IIi器1
411Jl:第2の前置増幅器1412とが、Y軸方向
の位置を検出する出力信号を増幅し、第3の増幅器14
1)と第4の増幅器1414とが、X軸方向の位置を検
出する出力信号を増幅する様に構成されている。第1の
加算用演算器1421は、Y軸方向検出用の出力信号で
あるY、、Y、の加算を行うものである。
Location detection #! 14 is the completion test from the output signal of the light receiving section 1)?
9 This position detection unit 14 calculates the position of the test surface 1200, and includes a preamplifier 141 and an addition calculator 14.
2, a subtraction arithmetic unit 143, and a division arithmetic unit 144. The preamplifier 141 is for amplifying the output signal of the PSD1). First prefix #IIi device 1
411Jl: The second preamplifier 1412 amplifies the output signal for detecting the position in the Y-axis direction, and the third preamplifier 14
1) and a fourth amplifier 1414 are configured to amplify the output signal for detecting the position in the X-axis direction. The first addition arithmetic unit 1421 performs addition of Y, , Y, which are output signals for Y-axis direction detection.

更に、第1の減算用演算器1431は、Y軸方向検出用
の出力信号であるY、、¥2の減算を行うものである。
Furthermore, the first subtraction calculator 1431 subtracts Y, .

第1の除算用演算器1441は、第1の減算用演算器1
431の出力信号を、第1の加算用演算器1421の出
力信号で除算するものである。この第1の除算用演算器
1441の出力は、上記(5)式を演算した結果と等価
であり、Y軸方向の位置信号を得ることができる。同様
に、第2の加算用演算器1422と第2の減算用演算器
1432と第2の除算用演算器」442とを接続すれば
、X軸方向の位置信号を得ることができる。
The first division arithmetic unit 1441 is the first subtraction arithmetic unit 1
431 is divided by the output signal of the first addition arithmetic unit 1421. The output of the first division calculator 1441 is equivalent to the result of calculating the above equation (5), and a position signal in the Y-axis direction can be obtained. Similarly, by connecting the second addition arithmetic unit 1422, the second subtraction arithmetic unit 1432, and the second division arithmetic unit 442, a position signal in the X-axis direction can be obtained.

第1の駆動部15は、結合光学系1を被検物2QOの被
検面に合焦させるためのものである。この合焦は1発光
fljllから発光された光線が、被検物200の被検
面で反射し、この反射光が受光部1)に入射するが、受
光部1)に入射する入射光の位置が、被検部200との
距離により変化することを利用することができる。即ち
、位置検出部l11の出力信号により、*横面200ま
での距離を計測することが可能である。従って第1の駆
動部15が5被検物200の被検面までの距離に応じて
光学系を移動させ、結像光学系lを合焦させることがで
きる。更に移動量検出部16は、第1の駆動部15の合
焦動作による光学系の移動距離を計測するものである、
移動検出部16は、リニアスケール等を使用してもよく
、駆動手段にエンコーダー等を収り付けて計測してもよ
い、即ち、合焦動作による光学系の移動手段の移動量を
計測できる物であれば足りる。
The first drive unit 15 is for focusing the coupling optical system 1 on the test surface of the test object 2QO. This focusing is achieved when the light beam emitted from one light beam fljll is reflected on the test surface of the test object 200, and this reflected light enters the light receiving section 1), but the position of the incident light that enters the light receiving section 1) It is possible to utilize the fact that the distance changes depending on the distance from the test subject 200. That is, it is possible to measure the distance to the *lateral surface 200 based on the output signal of the position detection unit l11. Therefore, the first drive unit 15 can move the optical system according to the distance to the test surface of the five test objects 200 and focus the imaging optical system l. Further, the movement amount detection section 16 measures the movement distance of the optical system due to the focusing operation of the first drive section 15.
The movement detection unit 16 may use a linear scale or the like, or may measure by installing an encoder or the like in the driving means, that is, it may measure the amount of movement of the moving means of the optical system due to the focusing operation. That's enough.

次に、透過光学系2を説明する。y!1過光学系2は、
光源部21と電光手段22と第2の駆動部23とから構
成されている。光源部21は、被検物200を照明する
ための光源であり、適宜のランプ等が使用される。11
.光手段22は、光源部21の光線を被検物200の被
検面に合焦させ、被検面を照明するものである。第2の
駆動手段23は、結合光学系1の移動量検出部16の検
出信号に基き、電光手段22をrIR整して透過照明光
学系2を被検物200の被検面に合焦させるものである
Next, the transmission optical system 2 will be explained. Y! 1 optical system 2 is
It is composed of a light source section 21, an electric light means 22, and a second driving section 23. The light source section 21 is a light source for illuminating the test object 200, and an appropriate lamp or the like is used. 11
.. The light means 22 focuses the light beam from the light source section 21 on the surface to be examined of the object 200 to illuminate the surface to be examined. The second driving means 23 performs rIR adjustment on the electric light means 22 based on the detection signal of the movement amount detecting section 16 of the coupling optical system 1 to focus the transmitted illumination optical system 2 on the test surface of the test object 200. It is something.

コンピュータ3は、位置検出部14と移動量検出部16
の出力信号に基き、第1の駆動部15と第2の駆動部2
3を制御駆動するためのものである。
The computer 3 includes a position detection section 14 and a movement amount detection section 16.
The first drive section 15 and the second drive section 2
This is for controlling and driving 3.

以上の様に構成された本実施例は、マスクパターンが形
成された半導体マスク(被検物200)を基準台4に載
置する1次に、発光部11から光線を発光させ、半導体
マスク200に照射させる。
In this embodiment configured as described above, a semiconductor mask (test object 200) on which a mask pattern is formed is first placed on the reference table 4, and then a light beam is emitted from the light emitting section 11, and the semiconductor mask 200 is irradiate it.

半導体マスク200からの反射光を受光部1)に入射さ
せる。受光部1)は1反射光の入射位置に相当する電流
を出力し、位置検出手段14が演算処理して位置信号を
コンピュタ3に出力する。コンピュタ3は1位置検出手
段14の位置信号に基き、半導体マスク200までの距
離を算出する。
The reflected light from the semiconductor mask 200 is made incident on the light receiving section 1). The light receiving section 1) outputs a current corresponding to the incident position of one reflected light, and the position detecting means 14 performs arithmetic processing and outputs a position signal to the computer 3. The computer 3 calculates the distance to the semiconductor mask 200 based on the position signal from the 1-position detection means 14.

そして結合光学系1が、半導体マスク200の被検面で
合焦させるために、第1の駆動部15を駆動させる。こ
の結果、結像光学系1は自動的に合焦する。更に移動量
検出部16が、第1の駆動部15による結合光学系1の
移動量を検出する。即ち、規準台4の位置から半導体マ
スク200の合焦位置までの距離を計測すれば、半導体
マスク200の厚みを計測することが可能となる、この
移動量検出部16の検出信号は、コンピュータ3に出力
され、コンピュータ3が、半導体マスク200の厚みを
考慮して透過照明光学系2の合焦位置を算出する。そし
て、コンピュータ3は第2の駆動部23を駆動させ、透
過照射光学系2を半導体マスク200の被検面に合焦さ
せ、正確に照明させることができる。
The coupling optical system 1 then drives the first drive unit 15 in order to focus on the test surface of the semiconductor mask 200. As a result, the imaging optical system 1 automatically focuses. Further, the movement amount detection section 16 detects the amount of movement of the coupling optical system 1 by the first drive section 15 . That is, by measuring the distance from the position of the reference stand 4 to the in-focus position of the semiconductor mask 200, the thickness of the semiconductor mask 200 can be measured. The computer 3 calculates the focal position of the transmitted illumination optical system 2 in consideration of the thickness of the semiconductor mask 200. Then, the computer 3 drives the second drive unit 23, so that the transmission irradiation optical system 2 can focus on the surface to be inspected of the semiconductor mask 200 and illuminate it accurately.

次に1本実施例を半導体マスク検査装置に応用した例を
第2図に基いて説明する。この半導体マスク検査装置は
、半導体マスクのパターンを検査するもので、対物レン
ズ5と、ハーフミラ−6と。
Next, an example in which this embodiment is applied to a semiconductor mask inspection apparatus will be described with reference to FIG. This semiconductor mask inspection device inspects the pattern of a semiconductor mask, and includes an objective lens 5 and a half mirror 6.

CCD7と、駆動回路8と、A、/Dコンバータ9と1
判断部100と、正規パターンデータfI1110と、
コンピュータ120と、外部記憶装置1)0と、TVカ
メラ140と、モニタ150とからなっている。
CCD 7, drive circuit 8, A, /D converter 9 and 1
A determination unit 100, regular pattern data fI1110,
It consists of a computer 120, an external storage device 1) 0, a TV camera 140, and a monitor 150.

前述の自動合焦装置により結像光学系1と透過照明系2
とが共に合焦した後2本実施例である半導体マスク検査
装置を動作させる。対物レンズ5が、被検物である半導
体マスク200の像をハーフ8ラーを透過して、CCD
(電荷結合素子)7上に@像させる。CCD7は、結像
された半導体マスクに対応する電気信号を駆動回路8に
送出する。駆動回路8ではCCD7の出力信号を増II
等処理した後、A 、、/ Dコンバータ9に出力する
。A−’Dコンバータ9は、駆動回路8の画像信号を高
速にAD変換する。そして判断部100が、正規パター
ンデータ部J10に記憶されている画像データとCCD
7で撮像し5た画像、データが一致するか占かパターン
マy%Hチングを行う、そして、コンピュータ120が
、半導体マスク200に傷等の破損部が在るか否かを判
訪処理し1判断結果を外部記憶装置1)0であるフロッ
ピディスク苓に記憶させる。この際、C0D7で撮像し
なiI像をモニタ150に描出させることができ4.な
お、ハーフミラ−6で反射させた光線による像をコ゛\
パhメラ140でti*L、モニタ150に表示するこ
とができる。この様に構成すれば、コンピュータ120
に、入力されている画像データが適当であるかチエ・リ
フすることができる。
The above-mentioned automatic focusing device allows the imaging optical system 1 and the transmitted illumination system 2 to be
After both are in focus, the semiconductor mask inspection apparatus of the second embodiment is operated. The objective lens 5 transmits the image of the semiconductor mask 200, which is the object to be inspected, through the half-8 rays and displays it on the CCD.
(Charge-coupled device) Image on 7. The CCD 7 sends an electric signal corresponding to the imaged semiconductor mask to the drive circuit 8. In the drive circuit 8, the output signal of the CCD 7 is increased II.
After processing, it is output to the A/D converter 9. The A-'D converter 9 performs AD conversion of the image signal of the drive circuit 8 at high speed. Then, the judgment section 100 uses the image data stored in the regular pattern data section J10 and the CCD.
The image captured in step 5 is checked to see if the data matches, and then the computer 120 performs processing to determine whether there are any damaged parts such as scratches on the semiconductor mask 200. 1) The judgment results are stored in a floppy disk, which is an external storage device 1). At this time, the iI image can be displayed on the monitor 150 without being captured by C0D7.4. In addition, here is the image of the light beam reflected by the half mirror 6.
Ti*L can be displayed on the monitor 150 on the camera 140. With this configuration, the computer 120
You can check whether the input image data is appropriate.

以上の櫟に構成された本実施例は、半導体マスク200
の厚みを考慮して結像光学系1と透過照明光学系2の合
焦が行わわるので、照明位置が狂うことなく、!&適な
条件で半導体マスク200の検査を行うことができる。
In this embodiment configured in the above-described manner, the semiconductor mask 200
Since the focusing of the imaging optical system 1 and the transmitted illumination optical system 2 is performed taking into account the thickness of the lens, the illumination position does not go out of order! & The semiconductor mask 200 can be inspected under suitable conditions.

そして、自動合焦をリアルタイムに行うことができるの
で、正確かつ効率的に半導体マスクの検査を行うことが
できるという効果がある。
Further, since automatic focusing can be performed in real time, there is an effect that semiconductor masks can be inspected accurately and efficiently.

「効果」 以上の様に構成された本発明は、第1の駆動手段が、位
置検出手段の検出信号に基き、結合光学系を合焦させる
と共に、移動量検出手段が、第1の駆動手段の移動量を
検出し、被検物の厚みを計測し、第2の駆動手段が、前
記移動量検出手段の噴出信号(;基さ、透過照明系を合
焦させるように渚戎されているので1位置検出手段と移
動量検出手段によって透過照明光学系を合焦させること
ができる。透過照明光学系も被検物の厚みや自重による
撓みを考慮して合焦するので、正確に被検面を照明する
ことができるという効果がある。特に本発明の自動合焦
装置は、結像光学系のみに搭載すればよいので、Wi造
が複雑化せず、コストも安い上、装置全体の小型化が可
能であるという卓越した効果がある。
"Effects" In the present invention configured as described above, the first driving means focuses the coupling optical system based on the detection signal of the position detecting means, and the movement amount detecting means focuses the coupling optical system based on the detection signal of the position detecting means. The second driving means detects the amount of movement of the object and measures the thickness of the object to be inspected, and the second driving means is driven so as to focus the transmitted illumination system. Therefore, the transmitted illumination optical system can be focused using the 1-position detection means and the movement amount detection means.The transmitted illumination optical system also takes into account the thickness of the object to be inspected and deflection due to its own weight, so it can accurately focus the transmitted illumination optical system. This has the effect of being able to illuminate a surface.In particular, since the automatic focusing device of the present invention only needs to be installed in the imaging optical system, the Wi-Fi structure is not complicated, the cost is low, and the overall device size is reduced. It has the outstanding effect of being able to be miniaturized.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の一実施例を示すもので、第1図は本実施例
の構成を説明する図であり、第2図は本実施例を半導体
マスク検査装置に応用した例を示す図、第3図はPSD
の構造を示す図であり、第4図は位置検出部の構成を示
す図である。 2 ・ ・ 23・ 3・ ・ 4 ・ ・ 透過照明光学系 第2の駆動部 コンピュータ 基準台 1・・・結像光学系 14・・位置検出部 15・・第1の駆動部 16・・移動量検出部
The drawings show an embodiment of the present invention. FIG. 1 is a diagram explaining the configuration of this embodiment, FIG. 2 is a diagram showing an example in which this embodiment is applied to a semiconductor mask inspection device, and FIG. Figure 3 is PSD
FIG. 4 is a diagram showing the structure of a position detection section. 2 ・ ・ 23 ・ 3 ・ 4 ・ ・ Transmitted illumination optical system 2nd driving unit Computer reference stand 1... Imaging optical system 14... Position detection unit 15... 1st driving unit 16... Movement amount Detection unit

Claims (1)

【特許請求の範囲】[Claims] (1)被検物の位置を検出するための位置検出手段を有
する結像光学系と、この被検物を照明するための透過照
明光学系とからなり、結像光学系には、前記位置検出手
段の検出信号に基き、結合光学系を合焦させるための第
1の駆動手段と、この第1の駆動手段による移動量を検
出し、被検物の厚みを検出するための移動量検出手段と
が備えられており、前記透過照明光学系には、前記移動
量検出手段の検出信号に基き、前記透過照明光学系の合
焦を行うための第2の駆動手段が備えられていることを
特徴とする自動合焦照明装置。
(1) Consisting of an imaging optical system having a position detection means for detecting the position of the object to be inspected, and a transmitted illumination optical system for illuminating the object, the imaging optical system includes a A first driving means for focusing the coupling optical system based on the detection signal of the detection means, and a movement amount detection for detecting the amount of movement by the first driving means and detecting the thickness of the object to be examined. and the transmitted illumination optical system is provided with a second driving means for focusing the transmitted illumination optical system based on the detection signal of the movement amount detection means. An automatic focusing illumination device featuring:
JP01006744A 1989-01-13 1989-01-13 Automatic focusing lighting system Expired - Fee Related JP3120176B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP01006744A JP3120176B2 (en) 1989-01-13 1989-01-13 Automatic focusing lighting system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01006744A JP3120176B2 (en) 1989-01-13 1989-01-13 Automatic focusing lighting system

Publications (2)

Publication Number Publication Date
JPH02186312A true JPH02186312A (en) 1990-07-20
JP3120176B2 JP3120176B2 (en) 2000-12-25

Family

ID=11646715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP01006744A Expired - Fee Related JP3120176B2 (en) 1989-01-13 1989-01-13 Automatic focusing lighting system

Country Status (1)

Country Link
JP (1) JP3120176B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1123952A (en) * 1997-06-30 1999-01-29 Nec Corp Automatic focusing device and laser beam machining device using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6168321U (en) * 1984-10-06 1986-05-10
JPS61194723A (en) * 1985-02-25 1986-08-29 Hitachi Ltd Optical device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6168321U (en) * 1984-10-06 1986-05-10
JPS61194723A (en) * 1985-02-25 1986-08-29 Hitachi Ltd Optical device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1123952A (en) * 1997-06-30 1999-01-29 Nec Corp Automatic focusing device and laser beam machining device using the same

Also Published As

Publication number Publication date
JP3120176B2 (en) 2000-12-25

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