JPH02201947A - Semiconductor device - Google Patents

Abstract

PURPOSE:To double electrode placement space and realize high-density mounting by disposing electrodes on two oppositely facing sides and connecting a first and a second lead which are insulated and the electrode on each side. CONSTITUTION:In a semiconductor element 1, a circuit is formed on two oppositely facing sides, a plurality of electrodes 2 are disposed on the edge of each side, and an internal lead 3 is placed near each electrode 2. The internal lead 3 is formed in such a manner that a first lead 3a and a second lead 3b are stacked via an insulator 3c. The electrode 2 disposed on the top surface of the semiconductor element 1 and the first lead 3a are connected by a metal fine wire 4. The electrode 2 disposed on the bottom surface of the semiconductor element 1 and the second lead 3b are connected by a metal fine wire 4. Thus, wire connection can be made from both sides of the semiconductor element 1. As a result, electrodes of a two-fold number can be mounted at the same electrode wiring density. Thus, a yield at manufacturing time can be enhanced and a high integration is possible.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device in which an electrode on a semiconductor element and a lead frame are connected with a thin metal wire.

[Prior Art] Conventionally, in this type of semiconductor device, a semiconductor element is fixed to the element mounting part of a lead frame, and the electrodes provided on the semiconductor element and the internal leads of the lead frame are connected with metal from the circuit forming surface side. It was constructed by connecting with a thin wire and sealing the connected portion with, for example, resin.

[Problems to be Solved by the Invention] However, in the conventional semiconductor device described above, when the number of input/output bins increases as the degree of integration of semiconductor elements increases,
There was a problem that the number of electrodes on the semiconductor element also increased, making the semiconductor element larger.

In addition, when trying to miniaturize semiconductor devices, the packaging density increases and the spacing between electrodes becomes narrower. There is a problem in that the tool comes into contact with the metal wire, deforming the adjacent metal wire, and in extreme cases cutting it, reducing the yield of semiconductor devices.

The present invention has been made in view of such problems, and includes:
An object of the present invention is to provide a semiconductor device that has a high manufacturing yield and can be highly integrated.

[Means for Solving the Problems] A semiconductor device according to the present invention includes a semiconductor element in which a plurality of electrodes are formed, a plurality of leads having one end disposed near each electrode of the semiconductor element, and a plurality of leads of these leads. In a semiconductor device comprising thin metal wires connecting one end and each electrode of the semiconductor element, the semiconductor element has a plurality of electrodes formed on opposing surfaces, and at least a part of the plurality of leads is It consists of a first lead and a second lead that are polymerized through an insulator, and the thin metal wire connects the electrode formed on one surface of the semiconductor element and the first lead, and also connects the first lead to the electrode formed on one surface of the semiconductor element. It is characterized in that the electrode formed on the other surface of the element is connected to the second lead.

[Function] In the present invention, at least some of the plurality of leads are
It has a triple structure in which the first and second leads are polymerized via an insulator. Electrodes are formed on both sides of the semiconductor device, and the electrode on one side is connected to a first lead,
Further, the electrode on the other side is connected to the second lead. Therefore, according to the present invention, the space for arranging the electrodes can be reduced compared to the conventional one.
Since the number of electrodes can be doubled and the arrangement density of electrodes can be reduced by that amount, it is possible to suppress a decrease in yield during manufacturing even for highly integrated semiconductor devices.

[Example] Next, an example of the present invention will be described with reference to the accompanying drawings.

FIG. 1 is a diagram showing a resin-sealed semiconductor device according to a first embodiment of the present invention, in which (a) is a plan view showing a part of the device, and (b)
) is an elevational view, and (c) is a side view.

The semiconductor element 1 has circuits formed on two opposing surfaces, and a plurality of electrodes 2 arranged at the periphery of each surface. The lead frame does not have an element mounting portion, and its internal leads 3 are arranged near each of the electrodes 2. The internal lead 3 has a structure in which a first lead 3a and a second lead 3b are overlapped with an insulator 3c interposed therebetween. The first lead 3a is arranged on the upper surface side of the semiconductor element 1 in the figure, and the second lead 3b is arranged on the upper surface side of the semiconductor element 1.
It is located on the bottom side in the figure. And semiconductor element 1
The electrode 2 provided on the upper surface and the first lead 3a are connected by the thin metal wire 4, and the electrode 2 provided on the lower surface of the semiconductor element 1 and the second lead 3b are connected, respectively.

Furthermore, the semiconductor element 1 including this connection portion is covered with a sealing resin 5.
It is sealed by.

According to the resin-sealed semiconductor device configured in this way,
Since connections can be made from both sides of the semiconductor element 1,
Twice the number of electrodes can be arranged with the same electrode wiring density as in the past. Therefore, even when current lead frame production technology and wire bonding technology are considered, it is possible to increase the number of external electrodes that can be drawn out to the outside to 400 or more.

FIG. 2 is a diagram showing a resin-sealed semiconductor device according to a second embodiment of the present invention, in which (a) is a plan view showing a part of the device;
b) is an elevational view, and (c) is a side view. Note that this second
In the figure, the same parts as in FIG. 1 are given the same reference numerals, and the explanation of those parts will be omitted.

In this embodiment, some internal leads 3 of the lead frame are
′ connects the first glue portion 3a and the second lead 3b to the metal 3
It has a structure in which they are overlapped via d.

According to this embodiment, since electrical signals can be exchanged between the circuits formed on two opposing surfaces of the semiconductor element 1 via the internal leads 3', these circuits can be connected externally. This has the advantage that it is possible to omit the necessary work.

[Effects of the Invention] As explained above, the present invention provides
Since electrodes are provided on two surfaces and the first and second leads insulated by an insulator are connected to the electrodes on each surface, conventional semiconductors with one surface do not have wiring connections. Compared to other devices, the electrode arrangement space can be doubled, allowing high-density packaging. Further, the number of semiconductor elements produced from one semiconductor wafer can be approximately doubled, and product costs can be reduced.

Furthermore, according to the present invention, it is possible to double the electrode spacing compared to the conventional one, so when connecting thin metal wires, the jigs and tools do not deform or cut the thin metal wires.

Therefore, the manufacturing yield of semiconductor devices is improved, and
Reliability can be significantly improved.

[Brief explanation of the drawing]

FIG. 1(a) is a plan view showing a part of a resin-sealed semiconductor device according to the first embodiment of the present invention, FIG. 1(b) is an elevational view of the device, and FIG. ) is a side view of the device, and Figure 2 (a) is a side view of the same device.
) is a plan view showing a part of a resin-sealed semiconductor device according to a second embodiment of the present invention, FIG. 2(b) is an elevational view of the device,
FIG. 2(C) is a side view of the device. 1; Semiconductor element, 2; Electrode, 3.3', Internal lead, 3a; First lead, 3b; Second lead, 3c; Insulator, 3d; Metal, 4; Metal mt! , 5; Sealing resin

Claims (1)

[Claims] (1) A semiconductor element having a plurality of electrodes formed thereon, a plurality of leads having one end disposed near each electrode of the semiconductor element, and a metal connecting one end of these leads to each electrode of the semiconductor element, respectively. In a semiconductor device equipped with a thin wire,
In the semiconductor element, a plurality of electrodes are formed on each of opposing surfaces, the plurality of leads are composed of a first lead and a second lead, at least a part of which are polymerized through an insulator, and the thin metal wire connects an electrode formed on one surface of the semiconductor element and the first lead, and
an electrode formed on the other surface of the semiconductor element and the second
A semiconductor device, characterized in that the semiconductor device is connected to a lead.