JPH02202056A - Close contact type image sensor - Google Patents

Close contact type image sensor

Info

Publication number
JPH02202056A
JPH02202056A JP1022823A JP2282389A JPH02202056A JP H02202056 A JPH02202056 A JP H02202056A JP 1022823 A JP1022823 A JP 1022823A JP 2282389 A JP2282389 A JP 2282389A JP H02202056 A JPH02202056 A JP H02202056A
Authority
JP
Japan
Prior art keywords
light
light emitting
image sensor
contact type
type image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1022823A
Other languages
Japanese (ja)
Inventor
Shigeki Matsuo
茂樹 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP1022823A priority Critical patent/JPH02202056A/en
Publication of JPH02202056A publication Critical patent/JPH02202056A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)

Abstract

PURPOSE:To further miniaturize a contact image sensor of this design by a method wherein light detecting members forming a light detecting element array and light emitting members forming a light emitting array are mounted on a primary face of a substrate substantially in parallel with each other. CONSTITUTION:A light emitting member 12 and a light detecting member 13 are mounted on a base plate 11. The light emitting member 12 is formed in such a manner that a lower electrode 15, a light emitting layer 16, and an upper electrode 17 are successively formed on an insulating board 14 of continuous length and able to emit light rays in a lengthwise direction. On the other hand, the light detective member 13 is formed in such a manner that a common electrode 19 common to light detecting elements, a photoelectric conversion film 20, and an individual electrode 21 of each element are successively formed in a lengthwise direction on an insulating board 18 of continuous length. And, a protective film 22 is formed on the members 12 and 13 to protect the elements. Light rays radiated from the light emitting member 12 are made to be incident on a manuscript through the intermediary of the protective film 22, and the light rays reflected from the manuscript are detected by the light detective member 13. By this setup, a light detective element array is formed only on one primary surface of a board, so that an image sensor of this design can be made further miniaturized.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はファクシミリなどに用いられる密着型イメージ
センサに関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a contact type image sensor used in facsimiles and the like.

〔従来技術及びその問題点〕[Prior art and its problems]

密着型イメージセンサを従来周知のCODに変えてファ
クシミリ用センサに用いた場合、ファクシミリ自体が小
型化になり、そのため、近時、その実用化が急速に広め
られている。
When a contact type image sensor is used in a facsimile sensor instead of a conventionally well-known COD, the facsimile itself becomes smaller, and its practical use is therefore rapidly becoming widespread.

長尺状の密着型イメージセンサは原稿の主走査方向に配
置され、そして、原稿の移動方向(副走査方向)ととも
に上記主走査方向に読取り、これにより、原稿の二次元
的な画像の読取りが可能となる。
The elongated contact type image sensor is arranged in the main scanning direction of the original, and reads in the main scanning direction as well as the moving direction (sub-scanning direction) of the original, thereby reading a two-dimensional image of the original. It becomes possible.

第2図は公知の密着型イメージセンサの横断面である。FIG. 2 is a cross section of a known contact type image sensor.

1はガラスなどの透明基板であり、この基板1の上には
各受光素子の共通電極2、光電変換膜3並びに各素子ご
との個別電極4が順次形成され、しかも、各素子に対応
して光通過孔5が形成され、これによって受光素子アレ
イが主走査方向に形成される。そして、この素子アレイ
を保護するための保護膜6が形成され、この保護膜6の
上には読取るべき原稿7が配置される。
Reference numeral 1 designates a transparent substrate such as glass. On this substrate 1, a common electrode 2 for each light receiving element, a photoelectric conversion film 3, and an individual electrode 4 for each element are sequentially formed. A light passing hole 5 is formed, thereby forming a light receiving element array in the main scanning direction. A protective film 6 is formed to protect this element array, and a document 7 to be read is placed on top of this protective film 6.

また、基板1の他方の面には、光源が内設された光源支
持部材8が設けられており、この支持部材8の長尺状凹
部9には複数個の発光素子10が適当な間隔に配列され
、これにより、その発光素子10より照射した光は光通
過孔5を通り、原稿7を投光し、その反射光が各々の受
光素子により受光される。
Further, a light source support member 8 in which a light source is installed is provided on the other surface of the substrate 1, and a plurality of light emitting elements 10 are arranged at appropriate intervals in the elongated recess 9 of this support member 8. As a result, the light emitted from the light emitting element 10 passes through the light passage hole 5 and is projected onto the document 7, and the reflected light is received by each light receiving element.

しかしながら、上記構成の密着型イメージセンサによれ
ば、透明基板1の両方の主面上にそれぞれ発光素子及び
受光素子が配列され、これにより、センサ自体の厚みが
大きくなり、未だ満足し得るような小型化が達成されて
いないという問題点があった。
However, according to the contact type image sensor having the above configuration, the light emitting element and the light receiving element are arranged on both main surfaces of the transparent substrate 1, which increases the thickness of the sensor itself, which is not yet satisfactory. There was a problem that miniaturization had not been achieved.

また、光通過孔5が各々の受光素子に対応して形成され
、その微細な形状により製造歩留りが低下するという問
題点もあった。
In addition, the light passage hole 5 is formed corresponding to each light receiving element, and the manufacturing yield is reduced due to the fine shape thereof.

したがって本発明の目的は更に小型化を達成した密着型
イメージセンサを提供することにある。
Therefore, an object of the present invention is to provide a contact type image sensor that is further miniaturized.

本発明の他の目的は製造歩留りを高め、製造コストが低
減した密着型イメージセンサを提供することにある。
Another object of the present invention is to provide a contact image sensor with increased manufacturing yield and reduced manufacturing cost.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の密着型イメージセンサは、発光素子アレイを形
成する発光部材並びに該発光素子アレイと実質上平行に
なるように受光素子アレイを形成する受光部材が基板の
一主面上に搭載されていることを特徴とする。
In the contact image sensor of the present invention, a light-emitting member forming a light-emitting element array and a light-receiving member forming a light-receiving element array are mounted on one main surface of a substrate so as to be substantially parallel to the light-emitting element array. It is characterized by

〔作 用〕 上記構成の密着型イメージセンサによれば、基板の一方
の主面上に発光及び受光素子アレイが形成されるために
更に小型化となり、しかも、前述したような光通過孔が
ないために製造歩留りが高まる。
[Function] According to the contact type image sensor having the above configuration, the light emitting and light receiving element arrays are formed on one main surface of the substrate, resulting in further miniaturization, and furthermore, there is no light passage hole as described above. Therefore, manufacturing yield increases.

〔実施例〕〔Example〕

本発明を第1図により詳細に説明する。 The present invention will be explained in detail with reference to FIG.

第1図は本発明密着型イメージセンサの横断面であり、
11はガラス、セラミックス、金属などから成るベース
板であり、このベース板11の上には発光部材12及び
受光部材13が搭載される。発光部材12は長尺状の絶
縁基板14の上に下部電極15、発光層16及び上部電
極17が順次形成され、その長尺方向に亘って発光でき
、例えばLED、EL、半導体レーザなどに相当する。
FIG. 1 is a cross section of the contact type image sensor of the present invention.
Reference numeral 11 denotes a base plate made of glass, ceramics, metal, etc., and a light emitting member 12 and a light receiving member 13 are mounted on this base plate 11. The light-emitting member 12 has a lower electrode 15, a light-emitting layer 16, and an upper electrode 17 sequentially formed on a long insulating substrate 14, and can emit light in the long direction, and corresponds to, for example, an LED, an EL, or a semiconductor laser. do.

一方、受光部材13によれば、長尺状の絶縁基板18の
上に各受光素子共通の共通電極19、アモルファスシリ
コンから成るPIN接合構造やヘテロ接合構造の光電変
換膜20及び各素子ごとの個別電極21が長尺方向に亘
って順次形成される。
On the other hand, according to the light receiving member 13, a common electrode 19 common to each light receiving element is formed on a long insulating substrate 18, a photoelectric conversion film 20 having a PIN junction structure or a heterojunction structure made of amorphous silicon, and an individual photoelectric conversion film 20 for each element. The electrodes 21 are sequentially formed in the longitudinal direction.

前記絶縁基板14.18はガラス基板、石英基板また高
熱伝導率のセラミック基板から成り、そして・発光部材
12及び受光部材13をベース板11の上に搭載する場
合、接着剤を用いて各部材12.13の絶縁基板14.
18を接着する。
The insulating substrates 14 and 18 are made of a glass substrate, a quartz substrate, or a ceramic substrate with high thermal conductivity, and when the light emitting member 12 and the light receiving member 13 are mounted on the base plate 11, each member 12 is attached using an adhesive. .13 insulating substrate 14.
Glue 18.

そして、各部材12.13の上には素子を保護するため
に保護膜22が形成される。この保護膜22は510g
、SiN、5iCs樹脂、〔樹脂+ガラス〕などにより
形成する。
A protective film 22 is formed on each member 12.13 to protect the device. This protective film 22 weighs 510g.
, SiN, 5iCs resin, [resin + glass], etc.

上記構成の密着型イメージセンサによれば、発光部材1
2より照射した光が保護膜22を介して原稿23を投光
し、その反射光が受光部材13により受光される。
According to the contact image sensor configured as described above, the light emitting member 1
The light irradiated from 2 is projected onto the original 23 through the protective film 22 , and the reflected light is received by the light receiving member 13 .

〔発明の効果〕〔Effect of the invention〕

以上の実施例より明らかな通り、本発明の密着型イメー
ジセンサは発光・受光素子アレイの搭載用基板の一方の
主面側だけに素子形成されているために更に一層の小型
化ができた。
As is clear from the above embodiments, the contact type image sensor of the present invention can be further miniaturized because the elements are formed only on one main surface side of the mounting substrate for the light emitting/light receiving element array.

また、受光部材に光通過孔を形成する必要がないために
製造工程が減り、しかも、発光部材と受光部材を別個の
製造プロセスにより形成できるという点でも余分な製造
工程がなくなり、その結果、製造歩留り及び製造コスト
の改善ができた。
In addition, since there is no need to form light passing holes in the light receiving member, the number of manufacturing steps is reduced, and the fact that the light emitting member and the light receiving member can be formed in separate manufacturing processes eliminates unnecessary manufacturing steps. Yield and manufacturing costs were improved.

なお、本発明は上記実施例に限定されるものではなく、
本発明の要旨を逸脱しない範囲において、種々の変更、
改善などは何等差支えない。
Note that the present invention is not limited to the above embodiments,
Various modifications may be made without departing from the gist of the present invention.
There is no difference in any improvements.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明密着型イメージセンサの横断面図、第2
図は従来の密着型イメージセンサの横断面図である。 11 ・ 12 ・ 13 ・ 14.18 22 ・ 23 ・ ・ベース板 ・発光部材 ・受光部材 ・絶縁基板 ・保護膜 ・原稿 特許出願人 (663)京セラ株式会社代表者安城欽寿
Fig. 1 is a cross-sectional view of the contact type image sensor of the present invention;
The figure is a cross-sectional view of a conventional contact type image sensor. 11 ・ 12 ・ 13 ・ 14.18 22 ・ 23 ・ Base plate, light emitting member, light receiving member, insulating substrate, protective film, manuscript Patent applicant (663) Kyocera Corporation Representative Kinju Anjo

Claims (1)

【特許請求の範囲】[Claims] 発光素子アレイを形成する発光部材並びに該発光素子ア
レイと実質上平行になるように受光素子アレイを形成す
る受光部材が基板の一主面上に搭載されていることを特
徴とする密着型イメージセンサ。
A contact image sensor characterized in that a light emitting member forming a light emitting element array and a light receiving member forming a light receiving element array substantially parallel to the light emitting element array are mounted on one principal surface of a substrate. .
JP1022823A 1989-01-31 1989-01-31 Close contact type image sensor Pending JPH02202056A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1022823A JPH02202056A (en) 1989-01-31 1989-01-31 Close contact type image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1022823A JPH02202056A (en) 1989-01-31 1989-01-31 Close contact type image sensor

Publications (1)

Publication Number Publication Date
JPH02202056A true JPH02202056A (en) 1990-08-10

Family

ID=12093412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1022823A Pending JPH02202056A (en) 1989-01-31 1989-01-31 Close contact type image sensor

Country Status (1)

Country Link
JP (1) JPH02202056A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229596A (en) * 1991-08-06 1993-07-20 Tohoku Pioneer Electronic Corp. Image sensor having specific detector structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229596A (en) * 1991-08-06 1993-07-20 Tohoku Pioneer Electronic Corp. Image sensor having specific detector structure

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