JPH0221628A - Bonding pb alloy wire for superconducting element and superconducting device - Google Patents

Bonding pb alloy wire for superconducting element and superconducting device

Info

Publication number
JPH0221628A
JPH0221628A JP62335113A JP33511387A JPH0221628A JP H0221628 A JPH0221628 A JP H0221628A JP 62335113 A JP62335113 A JP 62335113A JP 33511387 A JP33511387 A JP 33511387A JP H0221628 A JPH0221628 A JP H0221628A
Authority
JP
Japan
Prior art keywords
wire
bonding
superconducting
alloy
alloy wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62335113A
Other languages
Japanese (ja)
Other versions
JPH0543296B2 (en
Inventor
Toshinori Kogashiwa
俊典 小柏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP62335113A priority Critical patent/JPH0221628A/en
Priority to GB8828875A priority patent/GB2214193B/en
Priority to DE3844879A priority patent/DE3844879C3/en
Priority to DE3844114A priority patent/DE3844114C3/en
Publication of JPH0221628A publication Critical patent/JPH0221628A/en
Publication of JPH0543296B2 publication Critical patent/JPH0543296B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment

Landscapes

  • Wire Bonding (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

PURPOSE:To obtain Pb alloy wire for bonding wherein wire stretching workability and loop forming state are superior, and realize highly reliable superconducting device, by working alloy into a thin wire form by rapid cooling solidification method, while the main element of the alloy being Pb, and added elements being blended therein. CONSTITUTION:In alloy wire 4 for bonding, Pb is used as the main element, and added elements are compounded. This alloy is manufactured by rapid cooling solidification method, and formed into a thin wire type by wire stretching working. For the addition elements, one or more kinds of elements are used among the following; Cu, Ga, Ge, Se, Ag, In, Sn, Sb, Te, Au, Ti, Bi, Pb and Pt.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は超電導素子の接続において、ワイヤボンディン
グ法、詳しくはネールへラドボンディング法又はウェッ
ジボンディング法によシ超電導素子と外部リードとを電
気的に接続するため使用するボンディングＰｂ合金線及
びそれを用いた超電導装置に関する。Detailed Description of the Invention (Industrial Field of Application) The present invention relates to the connection of superconducting elements by electrically connecting the superconducting element and external leads by wire bonding, specifically Neel-to-rad bonding or wedge bonding. The present invention relates to a bonding Pb alloy wire used for connection to a bonding Pb alloy wire and a superconducting device using the same.

（従来技術とその問題点） 従来、超電導素子の接続にはそのボンディング用線とし
てＡｌ線を使用し、外部リードに接続されていた。(Prior art and its problems) Conventionally, superconducting elements have been connected using Al wires as bonding wires, which are connected to external leads.

しかるに超電導素子の動作温度４．２　Ｋ　（液体ヘリ
ウム温度）においてＡＩは未だ超電導状態へ転移せず（
ＡＩの臨界温度は１．２　Ｋ　）　、そのため残留抵抗
が微弱信号のエネルギー損失を生じる原因となり、超電
導装置の信頼性低下の要因となっている。However, at the operating temperature of a superconducting element of 4.2 K (liquid helium temperature), AI has not yet transitioned to a superconducting state (
The critical temperature of AI is 1.2 K), so residual resistance causes energy loss of weak signals, which is a factor in reducing the reliability of superconducting devices.

斯る不具合を解決するためには、４．２に以上の臨界温
度をもつＮｂ　（９Ｋ　）あるいはＰｂ（７Ｋ）又はそ
れらの合金を使用することが考えられるが、Ｎｂは硬す
ぎてボンディング時にチ。In order to solve this problem, it is possible to use Nb (9K) or Pb (7K), or their alloys, which have a critical temperature of 4.2 or higher, but Nb is too hard and tends to crack during bonding. .

プ割れを起すなどボンディング用線として不適でろ・る
。It is unsuitable as a bonding wire as it may cause cracking.

又、単なるｐｂ又はその合金線の場合は細線化が難しく
、ボンディング後のループ形成状態が悪い等の問題点が
ある。Further, in the case of a simple PB or its alloy wire, it is difficult to make the wire thinner, and there are problems such as poor loop formation after bonding.

（発明の技術的課題） 本発明は叙上問題点を解決して伸線加工性、ループ形成
状態を良好ならしめるボンディング用ｐｂ合金線を提供
するとともに信頼性の高い超電導装置を提供せんとする
ものである。(Technical Problem of the Invention) The present invention aims to solve the above-mentioned problems and provide a PB alloy wire for bonding which improves wire drawability and loop formation condition, and also provides a highly reliable superconducting device. It is something.

（発明の構成） 斯る本発明のボンディング用ｐｂ合金線は、ｐｂを主要
元素とし、それに添加元素を配合した合金を急冷凝固法
により細いワイヤー状に作製してなることを特徴とし、
本発明の超電導装置は超電導素子と外部リードとを、ｐ
ｂを主要元素とし、かつ急冷凝固法により作製された細
い合金ワイヤーにより接続してなることを特徴とする。(Structure of the Invention) The PB alloy wire for bonding of the present invention is characterized in that it is made into a thin wire shape by a rapid solidification method from an alloy containing PB as the main element and additive elements mixed therein,
The superconducting device of the present invention connects the superconducting element and the external lead to p
It is characterized by having b as the main element and being connected by thin alloy wires produced by a rapid solidification method.

添加元素としてはＣｕ、　Ｑａ、　Ｇｅｓ　ＳｅＸＡｇ
、■ｎＸ　ＳｎＸ　Ｓｂ、ＴｅＳ　Ａｕ、ＴＩ、Ｂｉ、
Ｐｄ、Ｐｔ中の１種又は２種以上を用い、この添加元素
の配合により、Ｐｂ線の引張り強度を高めてボンディン
グ特性を確保するとともに室温から４．２Ｋに冷却時、
また４、２Ｋから室温へ昇温時における熱歪による応力
を緩和せしめる。Additive elements include Cu, Qa, Ges SeXAg
, ■nX SnX Sb, TeS Au, TI, Bi,
Using one or more of Pd and Pt, the combination of these additive elements increases the tensile strength of the Pb wire to ensure bonding properties, and when cooled from room temperature to 4.2K,
It also relieves stress caused by thermal strain when the temperature is raised from 4 or 2 K to room temperature.

（作用及び効果） ■　本発明のｐｂ合金線によれば、通常凝固法により作
製されたワイヤーと比較して、次の特性を有する。(Operations and Effects) (1) The pb alloy wire of the present invention has the following characteristics compared to a wire produced by a normal solidification method.

（１）多くの格子欠陥の導入、 （１１）績晶粒の微細化、 （１１１）化合物相の微細分散、 （１い非平衡相の生成、 （）元素相互間の強制固溶を有する組織、（■１）引張
り強度の著しい向上。(1) Introduction of many lattice defects, (11) Refinement of crystal grains, (111) Fine dispersion of compound phases, (1) Formation of non-equilibrium phases, () Structure with forced solid solution between elements. , (■1) Significant improvement in tensile strength.

これによりｐｂ線の伸線加工性が向上し、ボンディング
用としての細線化が可能となり、またボンディング後の
ループ形成状態が良好となるなどボンディング特性を確
保できた。This improved the drawability of the PB wire, making it possible to make the wire thinner for bonding, and ensuring bonding properties such as a good loop formation state after bonding.

■　超電導素子の動作温度（４，２Ｋ）において、ｐｂ
ｌｌｊも超電導状態へ転移し、その結果、超電導素子と
外部リードとが超電導状態で接合され、微弱信号のエネ
ルギー損失がなく超電導装置の信頼性を高め得た。■ At the operating temperature of superconducting elements (4,2K), pb
llj also transitioned to a superconducting state, and as a result, the superconducting element and the external lead were bonded in a superconducting state, and there was no energy loss of weak signals, increasing the reliability of the superconducting device.

（実施例） 図面第１図は本発明の超電導装置を示し、（１）はプラ
スチック又はセラミック製の基板、（２）は超電導素子
、（３）は外部リード、（４）はボンディング用の合金
ワイヤーである。(Example) Figure 1 shows a superconducting device of the present invention, in which (1) is a plastic or ceramic substrate, (2) is a superconducting element, (3) is an external lead, and (4) is an alloy for bonding. It's a wire.

ワイヤー（４）はｐｂを主要元素とし、それに添加元素
を配合した合金を急冷凝固法に製造し、かつ伸線加工に
よって細いワイヤー状に作製したものであり、その径は
３０〜５０ｐｍφである。The wire (4) is made of an alloy containing Pb as the main element and additive elements, which is manufactured by a rapid solidification method, and is made into a thin wire shape by wire drawing, and its diameter is 30 to 50 pmφ.

上記ワイヤー（４）はウェッジボンディング法によって
素子（２）と外部リード（３）とに渉ってループを形成
した状態で接続され、素子（２）はＳｉ層と回路を形成
したＮｂ層との積層構造であり、ワイヤー（４）の接続
部分にはワイヤー（４）と同質材の下地金属層（５）を
設け、また外部リード（３）にも下地金属層（６）を設
けておく（第２図）。尚第２図において（７）は絶縁材
からなる保護層である。The wire (4) is connected to the element (2) and the external lead (3) by wedge bonding to form a loop, and the element (2) is connected to the Si layer and the Nb layer on which the circuit is formed. It has a laminated structure, and a base metal layer (5) made of the same material as the wire (4) is provided at the connection part of the wire (4), and a base metal layer (6) is also provided on the external lead (3). Figure 2). In FIG. 2, (7) is a protective layer made of an insulating material.

上記下地金属層（５Ｘ６）には例えばＰｂＩｎ　Ａｕを
用いる。For example, PbInAu is used for the base metal layer (5×6).

而して、急冷凝固法により作製された本発明のワイヤー
（４）の実施品を示せば次表の通りであシ、通常凝固法
により作製した比較品と共に臨界温度（Ｔｃ）、引張り
強度、伸び、ループ形成状態の良否及び伸線加工性の良
否を示す。The actual wire (4) of the present invention produced by the rapid solidification method is as shown in the following table, and has a critical temperature (Tc), tensile strength, It shows the quality of elongation, loop formation, and wire drawability.

何れのワイヤーも４０μｍφの細ａＫ伸線加工したもの
で、伸線加工性の評価は、○印が断線等を生ぜずに４０
μφに伸線できたことを示し、Ｘ印が伸線時に断線等を
生じたことを示す。All wires were drawn with a fine AK wire of 40 μmφ, and the evaluation of wire drawability is as follows: ○ indicates 40 without wire breakage.
This indicates that the wire could be drawn to μφ, and the X mark indicates that a wire breakage occurred during wire drawing.

表table

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明超電導装置の断面図、第２図はそのＡ部
拡大図である。 図中、（１）は基板、（２）は超電導素子、（３）は外
部リード、（４）は合金ワイヤーである。FIG. 1 is a sectional view of the superconducting device of the present invention, and FIG. 2 is an enlarged view of section A thereof. In the figure, (1) is a substrate, (2) is a superconducting element, (3) is an external lead, and (4) is an alloy wire.

Claims (3)

【特許請求の範囲】[Claims] （１）Ｐｂを主要元素とし、それに添加元素を配合した
合金を急冷凝固法により細いワイヤー状に作製してなる
超電導素子用ボンディングＰｂ合金線。(1) A bonding Pb alloy wire for a superconducting element, which is made into a thin wire by a rapid solidification method using an alloy containing Pb as a main element and additive elements. （２）上記添加元素がＣｕ、Ｇａ、Ｇｅ、Ｓｅ、Ａｇ、
Ｉｎ、Ｓｎ、Ｓｂ、Ｔｅ、Ａｕ、Ｔｌ、Ｂｉ、Ｐｄ、Ｐ
ｔ中の１種又は２種以上である特許請求の範囲第１項記
載のボンディングＰｂ合金線。(2) The above additive element is Cu, Ga, Ge, Se, Ag,
In, Sn, Sb, Te, Au, Tl, Bi, Pd, P
The bonding Pb alloy wire according to claim 1, which is one or more of the following. （３）超電導素子と外部リードとを、Ｐｂを主要元素と
し、かつ急冷凝固法により作製された細い合金ワイヤー
により接続してなる超電導装置。(3) A superconducting device in which a superconducting element and an external lead are connected by a thin alloy wire containing Pb as a main element and produced by a rapid solidification method.
JP62335113A 1987-12-28 1987-12-28 Bonding pb alloy wire for superconducting element and superconducting device Granted JPH0221628A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62335113A JPH0221628A (en) 1987-12-28 1987-12-28 Bonding pb alloy wire for superconducting element and superconducting device
GB8828875A GB2214193B (en) 1987-12-28 1988-12-09 Bonding pb alloy wire for superconductor device and superconductor device
DE3844879A DE3844879C3 (en) 1987-12-28 1988-12-28 Superconductor device with a contact wire
DE3844114A DE3844114C3 (en) 1987-12-28 1988-12-28 Use of a contact wire made of a lead alloy in a superconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62335113A JPH0221628A (en) 1987-12-28 1987-12-28 Bonding pb alloy wire for superconducting element and superconducting device

Publications (2)

Publication Number Publication Date
JPH0221628A true JPH0221628A (en) 1990-01-24
JPH0543296B2 JPH0543296B2 (en) 1993-07-01

Family

ID=18284915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62335113A Granted JPH0221628A (en) 1987-12-28 1987-12-28 Bonding pb alloy wire for superconducting element and superconducting device

Country Status (2)

Country Link
JP (1) JPH0221628A (en)
GB (1) GB2214193B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0519675A (en) * 1991-07-16 1993-01-29 Patoroma Res Kk Optical disk type electronic learning device
CN103474408A (en) * 2013-09-26 2013-12-25 辽宁凯立尔电子科技有限公司 Gold and silver alloy bonding wire with gold-plated layer on surface and preparation method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3845805A (en) * 1972-11-14 1974-11-05 Allied Chem Liquid quenching of free jet spun metal filaments
GB1458284A (en) * 1974-03-20 1976-12-15 Bnf Metals Tech Centre Superconducting alloys

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0519675A (en) * 1991-07-16 1993-01-29 Patoroma Res Kk Optical disk type electronic learning device
CN103474408A (en) * 2013-09-26 2013-12-25 辽宁凯立尔电子科技有限公司 Gold and silver alloy bonding wire with gold-plated layer on surface and preparation method thereof

Also Published As

Publication number Publication date
GB8828875D0 (en) 1989-01-18
GB2214193A (en) 1989-08-31
JPH0543296B2 (en) 1993-07-01
GB2214193B (en) 1991-08-14

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