JPH02216890A - Forming method for pattern - Google Patents

Abstract

PURPOSE:To effectively form both patterns at an end and a center by providing a glazed layer on the end of the surface of a board, and forming patterns of finer interval than patterns formed on a ceramic part of the board on the surface of the layer by etching. CONSTITUTION:When a fine wiring part 2 is formed at a pattern interval to form an Al wiring pattern on the surface of a board 1 made, for example, of ceramics such as alumina ceramics, the part 2 is formed on the surface of a glazed layer 3 formed in advance on the end of the board 1. In this case, since an etching amount of the part 2 is less than that of a wiring part 4, the part 4 is etched to a predetermined line width when the part 2 is etched to a predetermined line width, and both the parts 2, 4 are optimally etched.

Description

[Detailed description of the invention] (Industrial application field) The present invention relates to a pattern forming method.

(Prior Art) For example, it is well known that an An wiring pattern is formed by etching. This is a method in which AQ is formed into a thin film on the surface of a ceramic substrate by vapor deposition or sputtering, and then photoetched to form a desired pattern.

(Problems to be Solved by the Invention) Generally speaking, when attempting to form a pattern on the surface of a substrate by etching, if the pattern at the end is formed by etching at the same time as the pattern at other parts, the pattern at the end teeth.

The etching rate is higher than the pattern in the center.

The reason for this is that when forming a thin film by vapor deposition or sputtering, the film tends to be thicker at the center of the substrate than at the edges, and when multiple substrates are placed close to each other for etching. It is conceivable that the amount of etching liquid that comes into contact with the central portion of the substrate is smaller than that with the edge portions.

Therefore, if etching conditions are set so that a pattern is formed at the center of the substrate, the pattern at the edges will be etched more than necessary, and in some cases, the pattern may be cut off.

Particularly when attempting to form a pattern at the edges that is denser than the pattern at the center, the pattern is noticeably cut at the edges.

This invention ensures the formation of both patterns at the edges and the center even when a pattern denser than other parts is formed at the edge of the surface of the substrate by etching at the same time as the pattern in other parts. The purpose is to

(Means for Solving the Problems) This invention provides a glaze layer at the edge of the surface of the substrate, and forms patterns on the surface of the glaze layer with finer intervals than the patterns formed on the ceramic portion of the substrate. It is characterized by being formed by etching.

(Operation) Even under the same etching conditions, the etching rate is different when etching An on the surface of a ceramic substrate and when etching AQ on the surface of the glaze layer on the substrate.

To explain this with a specific example, for 80 with a thickness of 1 to 2 μm, the etching rate on the surface of the ceramic substrate is approximately 20% higher than that on the surface of the glaze layer.

FIG. 1 shows an etching rate characteristic diagram of AJI.

Al with a thickness of 2 μm was etched with a phosphoric acid-based etching solution (solution temperature: 40
The graph shows the thickness of the etched AQ against the etching time when etching was performed at a temperature of 10.degree.

It can be seen from this that the AQ on the ceramic substrate is etched more than that on the glaze layer. This is thought to be due to the fact that the surface of AQ on the ceramic substrate is uneven and has a large contact area with the etching solution, so that etching proceeds quickly.

On the other hand, as described above, even if the pattern on the ceramic substrate is the same, the etching time increases toward the center of the substrate rather than the edges. FIG. 2 is a characteristic diagram showing the etching time with respect to the distance from the end of the AQ wiring.

The same etching solution as described above was used. It can be seen from the figure that the etching time on the edge side is approximately 20% shorter than on the central portion when etching the A1 portion of the same width.

Therefore, when coarse and fine patterns are mixed, if a glaze layer with a small etching rate is provided at the edge of the surface and the fine pattern is etched on that surface, the amount of Al etched in the fine pattern is suppressed, and the amount of Al etched in the fine pattern is suppressed. can be etched optimally at the same time as the original pattern on other parts of the surface.

(Example) FIG. 3 shows an embodiment of this invention.

A substrate 1 made of ceramic, for example alumina ceramic
When forming an AQ wiring pattern on the surface of the substrate 1 by etching, and forming a wiring part 2 with fine (dense) pattern spacing, the wiring part 2 is formed using a glaze layer 3 formed in advance on the edge of the substrate 1. Formed on the surface of

Specifically, a glaze layer 3 is formed in advance at the end where the dense wiring portion 2 is planned to be formed, and then a thin film of Ajl is formed on the surface of the substrate l (including the surface of the glaze layer 3). After forming, the wiring portion 2 may be formed simultaneously with the wiring portion 4 having a coarse pattern interval by photo-etching.

Since the amount of etching in the wiring part 2 is smaller than that in the wiring part 4, by the time the wiring part 2 is etched to a predetermined line width, the wiring part 4 is also etched to a predetermined line width. Both wiring sections 2.4 are etched optimally.

The glaze layer that can be used here preferably has a composition of Sin, NgO, Zr, or Oa. Furthermore, although the above description has been made regarding the case of AQ as the pattern formation target, it has been confirmed that similar effects can be obtained with Cu, Au, and the like.

(Effects of the Invention) As detailed above, according to the present invention, when forming a mixed pattern of coarse and dense patterns on the substrate surface by etching at the same time, a glaze layer is provided at the edge of the substrate surface, and a dense pattern is formed on the surface. Since the pattern is formed by etching, it is possible to perform etching simultaneously and optimally with the coarse pattern formed on other parts of the substrate surface.

[Brief explanation of the drawing]

FIGS. 1 and 2 are characteristic diagrams showing etching speed. FIG. 3 is a plan view of a substrate for explaining the embodiment method of the present invention.

Claims (1)

[Claims] A method for simultaneously forming, by etching, on the surface of a ceramic substrate a pattern in which the pattern spacing is mixed, the method comprising: providing a glaze layer at an end of the surface of the substrate; A pattern forming method characterized by forming, by etching, a pattern with finer intervals than the pattern formed on the ceramic portion of the substrate.