JPH0221919U - - Google Patents
Info
- Publication number
- JPH0221919U JPH0221919U JP10066988U JP10066988U JPH0221919U JP H0221919 U JPH0221919 U JP H0221919U JP 10066988 U JP10066988 U JP 10066988U JP 10066988 U JP10066988 U JP 10066988U JP H0221919 U JPH0221919 U JP H0221919U
- Authority
- JP
- Japan
- Prior art keywords
- microstrip line
- stages
- microwave band
- band low
- noise amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 1
Landscapes
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Description
第１図は本考案によるマイクロ波帯低雑音増幅
器の実施例を示す図で、同図ａは平面図、同図ｂ
は同図ａのＡ―Ａ線断面図である。第２図は本増
幅器の各回路部の損失、利得等を示す図である。
第３図は従来のマイクロ波帯低雑音増幅器の一例
を示す図で、同図ａは平面図、同図ｂは同図ａの
Ａ―Ａ線断面図である。
１……基台、２，３……ＦＥＴチツプ、４〜６
……誘電体基板、７……入力マイクロストリツプ
線路回路、８……段間マイクロストリツプ線路回
路、９……出力マイクロストリツプ線路回路、１
０……キヤツプ、１１……コンデンサ、１２……
入力端子、１３……出力端子、１４〜１７……バ
イアス端子、１８……ボンデイングワイヤ、１９
……チツプキヤリア、２０……パツケージ。
Figure 1 is a diagram showing an embodiment of a microwave band low noise amplifier according to the present invention, where a is a plan view and b is a plan view.
is a cross-sectional view taken along line A--A in Figure a. FIG. 2 is a diagram showing the loss, gain, etc. of each circuit section of this amplifier.
FIG. 3 is a diagram showing an example of a conventional microwave band low-noise amplifier, in which FIG. 3A is a plan view and FIG. 1... Base, 2, 3... FET chip, 4-6
... Dielectric substrate, 7 ... Input microstrip line circuit, 8 ... Interstage microstrip line circuit, 9 ... Output microstrip line circuit, 1
0... Cap, 11... Capacitor, 12...
Input terminal, 13... Output terminal, 14-17... Bias terminal, 18... Bonding wire, 19
...Chipukiyariya, 20...Pathukage.
Claims (1)
トリツプ線路回路で多段縦続接続して構成した増
幅器において、入力回路の誘電体基板の厚さより
、段間および出力回路の誘電体基板の厚さを薄く
したことを特徴とするマイクロ波帯低雑音増幅器
。 In an amplifier configured by cascading FET chips in multiple stages with microstrip line circuits made of dielectric substrates, the thickness of the dielectric substrate between stages and the output circuit is thinner than that of the input circuit. A microwave band low noise amplifier characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10066988U JPH0221919U (en) | 1988-07-29 | 1988-07-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10066988U JPH0221919U (en) | 1988-07-29 | 1988-07-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0221919U true JPH0221919U (en) | 1990-02-14 |
Family
ID=31328952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10066988U Pending JPH0221919U (en) | 1988-07-29 | 1988-07-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0221919U (en) |
-
1988
- 1988-07-29 JP JP10066988U patent/JPH0221919U/ja active Pending
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