JPH0321857U - - Google Patents
Info
- Publication number
- JPH0321857U JPH0321857U JP8330289U JP8330289U JPH0321857U JP H0321857 U JPH0321857 U JP H0321857U JP 8330289 U JP8330289 U JP 8330289U JP 8330289 U JP8330289 U JP 8330289U JP H0321857 U JPH0321857 U JP H0321857U
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- integrated circuit
- frequency integrated
- frequency
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Description
第１図はこの考案の一実施例によるＭＭＩＣ増
幅器のチツプパターンを示す平面図、第２図は、
第１図のＡ−Ａ線における断面図、第３図は従来
のＭＭＩＣ増幅器のチツプパターンを示す平面図
である。
図において、１……高周波トランジスタ、２…
…インダクタ、３……コンデンサ、４……入力信
号端子、５……出力信号端子、６……高周波トラ
ンジスタの直流バイアス印加端子、２０……絶縁
膜、３０……コンデンサを形成する絶縁体、３１
……コンデンサの一方の電極、３２……コンデン
サの他方の電極である。なお、各図中の同一符号
は同一または相当部分を示す。
FIG. 1 is a plan view showing a chip pattern of an MMIC amplifier according to an embodiment of this invention, and FIG.
FIG. 1 is a sectional view taken along line A--A in FIG. 1, and FIG. 3 is a plan view showing a chip pattern of a conventional MMIC amplifier. In the figure, 1...high frequency transistor, 2...
...Inductor, 3... Capacitor, 4... Input signal terminal, 5... Output signal terminal, 6... DC bias application terminal for high frequency transistor, 20... Insulating film, 30... Insulator forming capacitor, 31
. . . one electrode of the capacitor, 32 . . . the other electrode of the capacitor. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
ダクタなどの電気回路部品を半導体基板上に形成
した高周波集積回路において、前記コンデンサの
パターン上に絶縁膜を形成し、この絶縁膜上にイ
ンダクタのパターンを積層形成したことを特徴と
する高周波集積回路。 In a high-frequency integrated circuit in which electric circuit components such as high-frequency transistors, resistors, capacitors, and inductors are formed on a semiconductor substrate, an insulating film is formed on the capacitor pattern, and an inductor pattern is laminated on the insulating film. A high-frequency integrated circuit featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8330289U JPH0321857U (en) | 1989-07-14 | 1989-07-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8330289U JPH0321857U (en) | 1989-07-14 | 1989-07-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0321857U true JPH0321857U (en) | 1991-03-05 |
Family
ID=31630853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8330289U Pending JPH0321857U (en) | 1989-07-14 | 1989-07-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0321857U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019004204A1 (en) * | 2017-06-27 | 2019-01-03 | ローム株式会社 | Terahertz element and semiconductor device |
-
1989
- 1989-07-14 JP JP8330289U patent/JPH0321857U/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019004204A1 (en) * | 2017-06-27 | 2019-01-03 | ローム株式会社 | Terahertz element and semiconductor device |
| JPWO2019004204A1 (en) * | 2017-06-27 | 2020-04-30 | ローム株式会社 | Terahertz element, semiconductor device |
| US11239547B2 (en) | 2017-06-27 | 2022-02-01 | Rohm Co., Ltd. | Terahertz element and semiconductor device |
| US11699846B2 (en) | 2017-06-27 | 2023-07-11 | Rohm Co., Ltd. | Terahertz element and semiconductor device |
| US12278423B2 (en) | 2017-06-27 | 2025-04-15 | Rohm Co., Ltd. | Terahertz element and semiconductor device |
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