JPH0472701U - - Google Patents
Info
- Publication number
- JPH0472701U JPH0472701U JP11692190U JP11692190U JPH0472701U JP H0472701 U JPH0472701 U JP H0472701U JP 11692190 U JP11692190 U JP 11692190U JP 11692190 U JP11692190 U JP 11692190U JP H0472701 U JPH0472701 U JP H0472701U
- Authority
- JP
- Japan
- Prior art keywords
- stage
- signal input
- integrated circuit
- microwave integrated
- open stub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Waveguides (AREA)
- Microwave Amplifiers (AREA)
- Tests Of Electronic Circuits (AREA)
Description
第１図及び第２図はこの考案の一実施例である
マイクロ波集積回路の平面図、第３図及び第４図
は従来のマイクロ波集積回路の平面図である。
図において、１は金属板、２は誘電体基板、３
は半導体素子、４はチツプコンデンサ、５は金ワ
イヤ、６はＲＦ信号入出力端子用誘電体基板、７
はバイアス端子用基板、８はＲＦ信号入出力端子
、９はバイアス端子、１０はオープンスタブ、１
１は整合回路、１２はバイアスライン、１３はバ
イアス電圧供給用パツド、１４は各段のＲＦ特性
モニタ端子用誘電体基板、１５はＲＦ特性モニタ
用端子を示す。なお、図中、同一符号は同一、又
は相当部分を示す。
1 and 2 are plan views of a microwave integrated circuit which is an embodiment of this invention, and FIGS. 3 and 4 are plan views of a conventional microwave integrated circuit. In the figure, 1 is a metal plate, 2 is a dielectric substrate, and 3
is a semiconductor element, 4 is a chip capacitor, 5 is a gold wire, 6 is a dielectric substrate for RF signal input/output terminal, 7
is a bias terminal board, 8 is an RF signal input/output terminal, 9 is a bias terminal, 10 is an open stub, 1
1 is a matching circuit, 12 is a bias line, 13 is a bias voltage supply pad, 14 is a dielectric substrate for an RF characteristic monitor terminal in each stage, and 15 is an RF characteristic monitor terminal. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
のＲＦ信号入出力部に使用波長λの1/2の長さの
オープンスタブを付加したことを特徴とするマイ
クロ波集積回路。 A microwave integrated circuit having a multi-stage configuration, characterized in that an open stub with a length of 1/2 of the wavelength λ used is added to the RF signal input/output section of each stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11692190U JPH0472701U (en) | 1990-11-05 | 1990-11-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11692190U JPH0472701U (en) | 1990-11-05 | 1990-11-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0472701U true JPH0472701U (en) | 1992-06-26 |
Family
ID=31864776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11692190U Pending JPH0472701U (en) | 1990-11-05 | 1990-11-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0472701U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014203846A (en) * | 2013-04-01 | 2014-10-27 | 株式会社東芝 | High frequency semiconductor module |
-
1990
- 1990-11-05 JP JP11692190U patent/JPH0472701U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014203846A (en) * | 2013-04-01 | 2014-10-27 | 株式会社東芝 | High frequency semiconductor module |
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