JPH02234329A - Liquid metal ion source - Google Patents
Liquid metal ion sourceInfo
- Publication number
- JPH02234329A JPH02234329A JP1052020A JP5202089A JPH02234329A JP H02234329 A JPH02234329 A JP H02234329A JP 1052020 A JP1052020 A JP 1052020A JP 5202089 A JP5202089 A JP 5202089A JP H02234329 A JPH02234329 A JP H02234329A
- Authority
- JP
- Japan
- Prior art keywords
- needle
- shaped electrode
- electrode
- liquid metal
- platinum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001338 liquidmetal Inorganic materials 0.000 title claims abstract description 20
- OFEAOSSMQHGXMM-UHFFFAOYSA-N 12007-10-2 Chemical compound [W].[W]=[B] OFEAOSSMQHGXMM-UHFFFAOYSA-N 0.000 claims abstract description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 9
- 230000005684 electric field Effects 0.000 claims abstract description 4
- 150000002500 ions Chemical class 0.000 claims description 19
- 229910045601 alloy Inorganic materials 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- -1 platinum ions Chemical class 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 abstract description 18
- 229910000676 Si alloy Inorganic materials 0.000 abstract description 10
- XRZCZVQJHOCRCR-UHFFFAOYSA-N [Si].[Pt] Chemical compound [Si].[Pt] XRZCZVQJHOCRCR-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052799 carbon Inorganic materials 0.000 abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000843 powder Substances 0.000 abstract description 4
- 229910021397 glassy carbon Inorganic materials 0.000 abstract description 3
- 230000005856 abnormality Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 230000003628 erosive effect Effects 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract description 2
- 239000010935 stainless steel Substances 0.000 abstract description 2
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000004227 thermal cracking Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000008018 melting Effects 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002296 pyrolytic carbon Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910019918 CrB2 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910033181 TiB2 Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000009763 wire-cut EDM Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は白金および硅素を主成分とする合金を加熱して
溶融し、高電界を印加して高輝度の白金イオンおよび硅
素イオンのビームを放射させる液体金属イオン源に関す
る。Detailed Description of the Invention (Industrial Application Field) The present invention heats and melts an alloy mainly composed of platinum and silicon, and applies a high electric field to generate a beam of high-intensity platinum ions and silicon ions. The present invention relates to a liquid metal ion source that emits liquid metal ions.
(従来の技術)
液体金属イオン源を用いた集束イオンビーム技術は、直
径0.1μm程度の非常に細いイオンビームを得ること
が可能であることから、フォトマスクの修正、マスクレ
スイオン注入、イオンビーム露光等の半導体分野での応
用が期待されている。(Prior technology) Focused ion beam technology using a liquid metal ion source can obtain a very narrow ion beam with a diameter of about 0.1 μm, so it is useful for photomask modification, maskless ion implantation, and ion implantation. Applications in the semiconductor field such as beam exposure are expected.
マスクレスイオン注入の分野ではイオン種として硅素(
St)は必須である。硅素は単体では融点が高く、溶融
させることが困難であるため、通常は金・硅素・ベリリ
ウム合金(例えば^us*sizJe.、数値は原子比
、融点約400℃)が用いられ、1000時間程度の寿
命を有するイオン源が開発されている(特開昭59−
189545号公報)。In the field of maskless ion implantation, silicon (
St) is required. Since silicon alone has a high melting point and is difficult to melt, a gold-silicon-beryllium alloy (e.g. ^us*sizJe., numerical value is atomic ratio, melting point approximately 400°C) is usually used, and the melting time is about 1000 hours. An ion source with a lifetime of
189545).
最近、半導体製造技術が進むにつれて集束イオンビーム
の径をより細く絞ることが要望されている.集束イオン
ビームの径および角電流密度は一般に色収差によって制
限されるので、細いイオンビームを得るためにはイオン
ビームのエネルギー分布を小さくすることが重要である
.硅素イオンビームのエネルギー分布は金・硅素・ベリ
リウム合金を用いたときよりも白金・硅素(PtSi)
合金を用いたときの方が小さい(文献:H,^rimo
to :J.Vac.Scl.Technol. B
6 ( 3 ) 、May /Jun 1988)
。Recently, as semiconductor manufacturing technology advances, there is a desire to narrow down the diameter of a focused ion beam. Since the diameter and angular current density of a focused ion beam are generally limited by chromatic aberration, it is important to reduce the energy distribution of the ion beam in order to obtain a narrow ion beam. The energy distribution of the silicon ion beam is better than that of platinum-silicon (PtSi) than when using a gold-silicon-beryllium alloy.
It is smaller when using an alloy (Reference: H, ^rimo
to :J. Vac. Scl. Technol. B
6 (3), May/Jun 1988)
.
したがって、白金・.硅素合金を用いる方がより細い硅
素イオンビームを得ることができる。Therefore, platinum... A narrower silicon ion beam can be obtained by using a silicon alloy.
(発明が解決しようとする課題)
しかしながら、白金・硅素合金は比較的融点が高く、た
とえばPt.tSiz:+ (原子比)の融点は850
℃であり、従来用いられているタングステン製針状電極
の場合、タングステンが前記合金で浸食され、数時間で
寿命に達する。この外にホウ化クロム製の針状電極も知
られているが、この場合も十数時間の寿命であることが
判明し、実用的な寿命を有する白金・硅素合金の液体金
属イオン源が得られなかった。本発明は実用的な寿命を
有し、かつ安定なイオンビームが得られる白金・硅素合
金の液体金属イオン源を提供することを目的とする。(Problems to be Solved by the Invention) However, platinum-silicon alloys have relatively high melting points, such as Pt. The melting point of tSiz: + (atomic ratio) is 850
℃, and in the case of conventionally used tungsten needle electrodes, the tungsten is eroded by the alloy and reaches the end of its life in a few hours. In addition to this, needle-shaped electrodes made of chromium boride are also known, but in this case as well, it has been found that they have a lifespan of more than 10 hours, and a platinum-silicon alloy liquid metal ion source with a practical lifespan has been obtained. I couldn't. An object of the present invention is to provide a platinum-silicon alloy liquid metal ion source that has a practical life and provides a stable ion beam.
(課題を解決するための手段)
本発明は、針状電極の表面に白金および硅素を主成分と
する合金を液体で支持し、電界の作用で前記針状電極の
先端から白金イオンおよび硅素イオンを放射させる液体
金属イオン源において、前記針状電極がホウ化タングス
テンからなることを特徴とする液体金属イオン源である
。(Means for Solving the Problems) The present invention supports an alloy mainly composed of platinum and silicon on the surface of a needle-like electrode, and by the action of an electric field, platinum ions and silicon ions are released from the tip of the needle-like electrode. The liquid metal ion source is characterized in that the needle-shaped electrode is made of tungsten boride.
本発明においてホウ化タングステンとはりJ −.WB
, l’l!BSなどの化合物が代表的なものであるが
、WとBとの不定比化合物であってもよく、また、Wと
Bとの混晶であってもよい。ホウ化タングステンの針状
電極としてはホウ化タングステンの焼結体を針状に加工
したもの、ホウ化タングステンの単結晶を針状に加工し
たもの、あるいはタングステン、タンタル、モリブデン
などの高融点金属を針状に加工し、その表面にホウ化タ
ングステンを被覆したものでもよい。In the present invention, tungsten boride and beam J-. W.B.
, l'l! A typical example is a compound such as BS, but it may also be a non-stoichiometric compound of W and B, or a mixed crystal of W and B. The needle-shaped tungsten boride electrode can be made of a sintered body of tungsten boride processed into a needle shape, a single crystal of tungsten boride processed into a needle shape, or a high-melting point metal such as tungsten, tantalum, or molybdenum. It may be processed into a needle shape and coated with tungsten boride on its surface.
これらの針状電極の製造方法を説明する。まず、ホウ化
タングステンの焼結体の場合、ホウ化タングステンの粉
末に必要に応してバインダーとして少量の鉄、ニッケル
、コバルトなどの金属粉末を加え、ホットプレス成型機
により圧力100kg/cflI以上、温度1600
〜2100゜Cで焼結成型する.なお、バインダーを多
く添加しすぎると、焼結体を針状電極として使用すると
きに白金・硅素合金による粒界腐食の問題が生ずるので
バインダーの使用量は必要最小限にとどめることが望ま
しい.
ホウ化タングステンの単結晶はフローティングゾーン法
等により製造される。ホウ化タングステンの焼結体また
は単結晶から針状に加工するには、まず必要に応じて放
電加工法により針状に加工し、次に機械研摩または電解
研摩により先端を尖らせ、先端の曲率半径を1〜2μm
以下にする。ホウ化タングステンで被覆された針状電極
を製造するには、あらかじめ先端の曲率半径を1〜2μ
m以下に研摩した高融点金属の表面にホウ化タングステ
ンをCVD法、プラズマ熔射法等で被覆すればよい。A method for manufacturing these needle-like electrodes will be explained. First, in the case of a sintered body of tungsten boride, a small amount of metal powder such as iron, nickel, or cobalt is added as a binder to the tungsten boride powder, and a hot press molding machine is applied to the pressure of 100 kg/cflI or more. temperature 1600
Sinter mold at ~2100°C. Note that if too much binder is added, the problem of intergranular corrosion due to the platinum-silicon alloy will occur when the sintered body is used as a needle electrode, so it is desirable to keep the amount of binder used to the minimum necessary. A single crystal of tungsten boride is manufactured by a floating zone method or the like. To process a sintered body or single crystal of tungsten boride into a needle shape, first process it into a needle shape by electrical discharge machining, if necessary, and then sharpen the tip by mechanical polishing or electrolytic polishing to reduce the curvature of the tip. radius 1~2μm
Do the following. To manufacture a needle-shaped electrode coated with tungsten boride, the radius of curvature of the tip must be adjusted to 1 to 2 μm in advance.
Tungsten boride may be coated on the surface of a high-melting point metal polished to a thickness of m or less by a CVD method, a plasma spraying method, or the like.
白金および硅素を主成分とする合金は針状電極の表面を
覆う程度の量で足りるが、長時間使用するためには該合
金を貯蔵するリザーバを針状電極に併設することが好ま
しい。リザーバはTa,W,Moなどの高融点金属、T
ic ..ZrC , TaC , WCなどの炭化物
、TiB2、ZrB.、TaB,、WB, CrB2な
どのホウ化物、TtN % TaNなどの窒化物の成形
体が用いられる。これらの材料の中でもホウ化タングス
テンは前記の通り白金・硅素合金に対する耐食性に/優
れるので好ましい。リザーバの構造は前記合金を液体で
貯蔵するとともに、針状電極に安定に供給できるもので
あればよいが、針状電極の基部外形に合わせた内面を有
する基部と前記合金を貯蔵する凹部を備えたものが好ま
しい。It is sufficient to use the alloy whose main components are platinum and silicon in an amount that covers the surface of the needle-shaped electrode, but in order to use it for a long time, it is preferable to provide a reservoir for storing the alloy along with the needle-shaped electrode. The reservoir is a high melting point metal such as Ta, W, Mo, etc.
ic. .. Carbide such as ZrC, TaC, WC, TiB2, ZrB. , TaB, WB, CrB2 and other borides, and TtN% TaN and other nitride molded bodies are used. Among these materials, tungsten boride is preferred because it has excellent corrosion resistance against platinum-silicon alloys as described above. The structure of the reservoir may be any structure as long as it can store the alloy in liquid form and supply it stably to the needle-like electrode, but it may include a base having an inner surface matching the outer shape of the base of the needle-like electrode and a recess for storing the alloy. Preferably.
前記合金を液体に保つためにヒーターを併設することが
好ましい。ヒーターはグラッシーカーボンまたは熱分解
カーボン等カーボンのブロソクを針状電極に圧接してカ
ーボンブロックに通電する構造にするとよい。とくにリ
ザーバをホウ化タングステンなどの導電性の高い材料で
製作し、針状電極、リザーバおよびヒーターをこの順序
で圧接すると、ヒーターへの通電が容易で、かつ安定し
た構造の液体金属イオン源になる。なお、この場合に、
リザーバとヒーターの間にカーボン板など液体合金との
漏れ性が小さく、かつ導電性の材料からなる隔壁を設け
ると、液体合金のヒーターへの浸透が防止できる。Preferably, a heater is provided to keep the alloy in a liquid state. The heater preferably has a structure in which a block of carbon such as glassy carbon or pyrolytic carbon is pressed against a needle-shaped electrode to supply electricity to the carbon block. In particular, if the reservoir is made of a highly conductive material such as tungsten boride, and the needle electrode, reservoir, and heater are pressed together in this order, it is easy to supply electricity to the heater, and a liquid metal ion source with a stable structure can be obtained. . In this case,
If a partition wall made of a conductive material that has low leakage with the liquid alloy, such as a carbon plate, is provided between the reservoir and the heater, it is possible to prevent the liquid alloy from penetrating into the heater.
(実施例)
以下、実施例1〜3および比較例1〜3により本発明を
具体的に説明する。針状電極の材料として表に示す各ホ
ウ化物の粉末をホットプレスにより、温度2000℃、
圧力150ksr/cdの条件で30分間加圧焼結して
、ホウ化物の成型体を製造した。いずれのホウ化物成型
体も相対密度は95%以上あった。ホウ化物成型体をワ
イヤカソト放電加工機によりQ, 5 鶴X 0. 5
鶴×5鶴の棒状に切断した。その先端を機械研摩して、
先端が円錐形の針状電極にした。該円錐の円錐角は30
度とし、円錐先端の曲率半径は2μmにした。(Example) Hereinafter, the present invention will be specifically explained using Examples 1 to 3 and Comparative Examples 1 to 3. Powders of each of the borides shown in the table are used as materials for needle electrodes by hot pressing at a temperature of 2000°C.
Pressure sintering was performed for 30 minutes at a pressure of 150 ksr/cd to produce a boride molded body. The relative density of all boride molded bodies was 95% or more. The boride molded body was processed using a wire cassette discharge machine.Q, 5 Tsuru 5
It was cut into sticks of 5 cranes each. Machine polish the tip,
A needle electrode with a conical tip was used. The cone angle of the cone is 30
degree, and the radius of curvature of the tip of the cone was 2 μm.
次に、前記針状電極と同じホウ化物の成型体をワイヤカ
ット放電加工法によって加工して、先端が湾曲したスプ
ーン状のリザーバを製作した。第1図に示すとおり、針
状電極1の両側にリザーバ2A,2B,グラシーカーボ
ン製の隔壁3A、3B、熱分解カーボン製のヒーター4
A,4Bおよびステンレス製の電極5A,5Bを配置し
、ボルト6、絶縁座金7A、7Bおよびナツ}8A、8
Bにより締め付けてこれらの部品を固定した。Next, a molded body of the same boride as the needle-shaped electrode was processed by wire-cut electrical discharge machining to produce a spoon-shaped reservoir with a curved tip. As shown in FIG. 1, on both sides of the needle electrode 1, there are reservoirs 2A, 2B, partition walls 3A, 3B made of glassy carbon, and a heater 4 made of pyrolytic carbon.
A, 4B and stainless steel electrodes 5A, 5B are arranged, bolts 6, insulating washers 7A, 7B and nut}8A, 8
These parts were fixed by tightening with B.
なお、電極5A,5Bは金属板9A,9Bを経て端子1
0A、IOHに接続され、端子は碍子1lに固定される
。Note that the electrodes 5A and 5B are connected to the terminal 1 through the metal plates 9A and 9B.
It is connected to 0A and IOH, and the terminal is fixed to the insulator 1l.
このようにして得られた液体金属イオン源を真空装置内
に取付け、圧力2 X 1 0 −”Torrの真空に
した.この真空装置内にはあらかじめ白金・硅素合金(
PbtSit3−原子比)を満たした窒化ホウ素製のル
ツボを入れておき、ルツボを加熱して該合金を溶融させ
ておいた。液体金属イオン源のヒーターに通電して針状
電極を加熱しながら、針状電極の先端をルツボ中の溶融
合金に浸すことよって溶融合金を針状電極に沿って上昇
させ、針状電極とリザーバの間に合金を溜めた。The liquid metal ion source obtained in this way was installed in a vacuum device and a vacuum was created at a pressure of 2 × 10 −” Torr.In this vacuum device, a platinum-silicon alloy (
A crucible made of boron nitride filled with PbtSit3-atomic ratio) was placed therein, and the crucible was heated to melt the alloy. While heating the needle electrode by applying electricity to the heater of the liquid metal ion source, the tip of the needle electrode is dipped into the molten alloy in the crucible, causing the molten alloy to rise along the needle electrode, and the needle electrode and the reservoir are heated. Alloy was stored in between.
このようにして作製された液体金属イオン源を別の真空
装置に取付け、装置内を圧力8X10−’Torrの真
空にした。液体金属イオン源のヒーターに通電し、その
電流の調節により針状電極先端の温度を輝度温度で10
00℃にした。なお、輝度温度は光高温計で測定した。The liquid metal ion source produced in this manner was attached to another vacuum device, and the inside of the device was evacuated to a pressure of 8×10 −′ Torr. Power is applied to the heater of the liquid metal ion source, and the temperature at the tip of the needle electrode is adjusted to 10% by brightness temperature by adjusting the current.
The temperature was set to 00℃. Note that the brightness temperature was measured using an optical pyrometer.
針状電極先端より1. 5 0離れたところに穴あき金
属円板からなる引出し電極を設け、引出し電極に印加す
る電圧の調節により電流lOμAのイオンビームを放出
させた。定電流モードでイオンビームの放出を続け、引
出し電圧の変動を測定し、下記の式でイオンビーム変動
率を求めた。1. From the tip of the needle electrode. An extraction electrode made of a perforated metal disk was provided at a distance of 50 mm, and an ion beam with a current of 10 μA was emitted by adjusting the voltage applied to the extraction electrode. The ion beam was continued to be emitted in constant current mode, the fluctuation of the extraction voltage was measured, and the ion beam fluctuation rate was determined using the following formula.
観察したところ、針状電極が白金・硅素合金により浸食
され、針状電掘先端の曲率半径が10μm以上に大きく
なっていた。Upon observation, it was found that the needle electrode had been eroded by the platinum-silicon alloy, and the radius of curvature at the tip of the needle electrode had increased to 10 μm or more.
表
Esax:10分間の引出し電圧の最大値[!−1−
: 1 0分間の引出し電圧の最小値表から明らかなよ
うに針状電極およびリザーバにホウ化タングステンを用
いた液体金属イオン源の場合にはイオンビーム変動率は
0. 3%以下と良好であった。150時間作動させた
のち、液体金属イオン源を真空装置から取出して観察し
たが針状電極やリザーバに異常はなかった。Table Esax: Maximum value of withdrawal voltage for 10 minutes [! -1-
: As is clear from the table of minimum extraction voltages for 10 minutes, the ion beam variation rate is 0. It was good at 3% or less. After operating for 150 hours, the liquid metal ion source was taken out from the vacuum apparatus and observed, but no abnormality was found in the needle electrode or reservoir.
いっぽう、針状電極およびリザーバにホウ化クロム、ホ
ウ化チタンまたはホウ化ジルコニウムを用いた液体金属
イオン源の場合には表に示すとおり、イオンビーム変動
率が大きく、5.5〜11時間でイオンビームを放出さ
せることができなくなった。液体金属イオン源を真空装
置から取出して(発明の効果)
本発明の液体金属イオン源はイオンビーム変動率が小さ
く、また白金・硅素合金による針状電極の浸食がなく、
長時間安定に使用することができる.On the other hand, in the case of a liquid metal ion source that uses chromium boride, titanium boride, or zirconium boride for the needle electrode and reservoir, the ion beam fluctuation rate is large, as shown in the table, and the ionization takes 5.5 to 11 hours. Beams can no longer be emitted. Taking out the liquid metal ion source from the vacuum apparatus (effects of the invention) The liquid metal ion source of the present invention has a small ion beam fluctuation rate, and there is no erosion of the needle electrode by the platinum-silicon alloy.
It can be used stably for a long time.
第1図は本発明の液体金属イオン源の正面図でである。 符号 1・一針状電極、 3A・3B−隔壁、 5A・5B・一電極、 7A・7B一絶縁座金、 9A・9B一金属板、 11一碍子。 2A・2B−リザーバ、 4A・4B− ヒーター 6・−ボルト、 8A・8B−ナット、 10A−10B一端子、 FIG. 1 is a front view of the liquid metal ion source of the present invention. sign 1. Single needle electrode, 3A/3B-bulkhead, 5A/5B/one electrode, 7A/7B - Insulating washer, 9A/9B - metal plate, 11 insulators. 2A/2B-Reservoir, 4A/4B- Heater 6.-volt, 8A/8B-nut, 10A-10B one terminal,
Claims (1)
液体で支持し、電界の作用で前記針状電極の先端から白
金イオンおよび硅素イオンを放射させる液体金属イオン
源において、前記針状電極がホウ化タングステンからな
ることを特徴とする液体金属イオン源。A liquid metal ion source in which an alloy containing platinum and silicon as main components is supported in a liquid on the surface of a needle-shaped electrode, and platinum ions and silicon ions are emitted from the tip of the needle-shaped electrode by the action of an electric field. A liquid metal ion source characterized in that the source consists of tungsten boride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1052020A JPH02234329A (en) | 1989-03-06 | 1989-03-06 | Liquid metal ion source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1052020A JPH02234329A (en) | 1989-03-06 | 1989-03-06 | Liquid metal ion source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02234329A true JPH02234329A (en) | 1990-09-17 |
Family
ID=12903131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1052020A Pending JPH02234329A (en) | 1989-03-06 | 1989-03-06 | Liquid metal ion source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02234329A (en) |
-
1989
- 1989-03-06 JP JP1052020A patent/JPH02234329A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4055780A (en) | Thermionic emission cathode having a tip of a single crystal of lanthanum hexaboride | |
| US2754259A (en) | Process and apparatus for growing single crystals | |
| EP1622184B1 (en) | Emitter for an ion source and method of producing same | |
| JPS5941435A (en) | Electrode for electrostatic spray device | |
| US4946706A (en) | Method of ion implantation | |
| JPH02234329A (en) | Liquid metal ion source | |
| JP2688261B2 (en) | Field emission ion source | |
| JPH026184B2 (en) | ||
| JP2517678B2 (en) | Liquid metal ion source | |
| JP2510719B2 (en) | Liquid metal ion source structure | |
| JPH02250238A (en) | Liquid metal ion source | |
| JPH02247951A (en) | Electric field-discharge type ion source | |
| JPH0676731A (en) | Thermoelectric field emission cathode | |
| JPS59191225A (en) | liquid metal ionic species alloy | |
| JPS63221541A (en) | Liquid metal ion source | |
| JPS62234834A (en) | Liquid-metal ion source | |
| Cochran et al. | Comparison of low-voltage field emission from TaC and tungsten fiber arrays | |
| JP5368114B2 (en) | Pt / Rh electrode for plasma generation, plasma generation apparatus, and plasma processing apparatus | |
| JP4408637B2 (en) | Film forming apparatus and film forming method | |
| PL236488B1 (en) | Method of making target and target | |
| TWI707608B (en) | Vacuum arc source | |
| JPH0614391Y2 (en) | Magnetic field free type hot cathode structure | |
| JPH0349175B2 (en) | ||
| CN115662860A (en) | A cathode structure of a micro-focus X-ray source and its preparation method | |
| JPH0797486B2 (en) | Method for manufacturing field emission ion source |