JPH0223640A - Resin sealed type semiconductor device - Google Patents

Resin sealed type semiconductor device

Info

Publication number
JPH0223640A
JPH0223640A JP63172663A JP17266388A JPH0223640A JP H0223640 A JPH0223640 A JP H0223640A JP 63172663 A JP63172663 A JP 63172663A JP 17266388 A JP17266388 A JP 17266388A JP H0223640 A JPH0223640 A JP H0223640A
Authority
JP
Japan
Prior art keywords
semiconductor chip
sealing resin
resin
chip
stress
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63172663A
Other languages
Japanese (ja)
Inventor
Ikuo Yoshida
吉田 育生
Noriyuki Sakuma
憲之 佐久間
Yoshio Honma
喜夫 本間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP63172663A priority Critical patent/JPH0223640A/en
Publication of JPH0223640A publication Critical patent/JPH0223640A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To make recessed parts provided in a sealing resin decrease stress which is exerted to a semiconductor chip and improve the reliability of a resin sealed type semiconductor device by providing recessed parts at least on an upper surface of a sealing resin substance which lays the semiconductor chip in the resin as well as at least at a part of the inside part above the semiconductor chip. CONSTITUTION:A semiconductor chip 10 which is 8mm square is connected to a lead frame 30 electrically through a bonding wire 20 and recessed parts 53 and 63 are formed by machining at parts located in the inside regions of a sealing resin 40. Each recessed part is dimensioned as 7.5X7.5X1mm and it reduces the volume of the sealing resin 40 on the semiconductor chip 10 to half approximately. Such a state of the sealing resin allows shrinkage stress of the above sealing resin 40 on the semiconductor chip 10 to be relieved and the movement volume of wiring in the square of the semiconductor chip 10 is reduced to one-thirds. The decrease in this stress prevents the semiconductor chip from being damaged. It is needless to say that the above mentioned effect is obtained if the recessed part is mounted at least on the chip side, that is, on the upper surface of the chip.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は樹脂封止型半導体装置に係り、特に信頼性の向
上した樹脂封止型半導体装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a resin-sealed semiconductor device, and particularly to a resin-sealed semiconductor device with improved reliability.

〔従来の技術〕[Conventional technology]

半導体チップを樹脂で封止した半導体装置においては、
半導体チップとこれを埋設している封止用樹脂体とが、
応力により剥離して両者の間に隙間を生ずる場合が多い
。この応力は半導体チップと封止用樹脂との熱膨張係数
の差異、封止用樹脂の硬化収縮等に起因している。上記
隙間は、外部からの水の浸透を促し、半導体チップ内の
金属材料部分を腐食させ、装置の早期劣化の原因となる
In semiconductor devices where semiconductor chips are sealed with resin,
The semiconductor chip and the sealing resin body in which it is embedded,
They often separate due to stress, creating a gap between them. This stress is caused by the difference in thermal expansion coefficient between the semiconductor chip and the sealing resin, curing shrinkage of the sealing resin, and the like. The above-mentioned gap promotes the penetration of water from the outside, corrodes the metal material portion within the semiconductor chip, and causes early deterioration of the device.

そこで、半導体チップと封止用樹脂との間の応力を緩和
し、両者の間の剥離を防止することを目的として、従来
、特公昭60−8627に記載のような装置が提案され
ている。第5図はこの従来装置を示すものであり、10
は半導体チップでありボンディングワイヤ20を介して
リードフレーム30に電気的に接続され、封止用樹脂4
0内に埋設されている。
Therefore, a device as described in Japanese Patent Publication No. 60-8627 has been proposed for the purpose of alleviating the stress between the semiconductor chip and the sealing resin and preventing the two from peeling off. FIG. 5 shows this conventional device, with 10
is a semiconductor chip, which is electrically connected to a lead frame 30 via a bonding wire 20, and is coated with a sealing resin 4.
It is buried in 0.

ここで封止用樹脂の上面もしくは下面には、平面方向か
ら見て半導体チップ10を取囲むように、応力吸収のた
めの溝55.65が形成されていた。
Here, grooves 55 and 65 for stress absorption were formed on the upper or lower surface of the sealing resin so as to surround the semiconductor chip 10 when viewed from the plane.

すなわちこの従来技術の主な目的は第5図(a)の半導
体チップ10の外側の封止用樹脂領域が収縮し、半導体
チップ10の及ぼそうとする応力を、半導体チップ10
の外側に設けた溝55.65によって吸収し、これによ
って信頼性を向上させようとするものである。
That is, the main purpose of this prior art is to reduce the stress exerted by the semiconductor chip 10 by shrinking the sealing resin region on the outside of the semiconductor chip 10 in FIG. 5(a).
The grooves 55 and 65 provided on the outside of the buffer absorb the heat, thereby improving reliability.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上記従来技術は、半導体装置の集積化が進み、半導体チ
ップの大型化や素子、配線の微細化が進んだ場合につい
て配慮がされておらず、半導体チップ構成材料の破損、
例えば配線の変形、断線、短絡、絶縁膜の割れや変形等
、に対する対策が十分でないという問題があった。また
従来技術は半導体チップより外周部に溝又は凹所を設け
ているため、封止樹脂のリードフレーム支持能力が低下
するという問題があった。
The above-mentioned conventional technology does not take into consideration the case where the integration of semiconductor devices progresses, semiconductor chips become larger, and elements and wiring become finer.
For example, there has been a problem in that there are insufficient measures against deformation of wiring, disconnection, short circuit, cracking or deformation of insulating film, and the like. Further, in the conventional technology, since a groove or a recess is provided on the outer periphery of the semiconductor chip, there is a problem in that the ability of the sealing resin to support the lead frame is reduced.

本発明の目的は、リードフレーム支持能力が高く、かつ
半導体チップ構成材料の破損を低減させた信頼性の高い
半導体装置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a highly reliable semiconductor device that has a high lead frame support capacity and reduces damage to semiconductor chip constituent materials.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的は、半導体チップを埋設する封止樹脂体の少な
くとも上面に、上記半導体チップ上の内側部の少なくと
も一部に凹部を設けたことを特徴とする樹脂封止型半導
体装置によって達成される。
The above object is achieved by a resin-sealed semiconductor device characterized in that a recess is provided in at least a portion of the inner side of the semiconductor chip on at least the upper surface of the sealing resin body in which the semiconductor chip is embedded.

本発明において、凹部とは、溝、凹所、空孔等のような
形状でもよい。また例えば溝の断面の形状も角型であっ
てもU字型でもV字型でもどのような形状でもよい。ま
た凹部は封止樹脂体の少なくとも上面、すなわち半導体
チップ搭載側にあればよいが、上面と下面の両方に設け
てもよい。
In the present invention, the recess may have a shape such as a groove, a recess, a hole, or the like. Furthermore, the cross-sectional shape of the groove may be of any shape, such as square, U-shaped, or V-shaped. Further, the recess may be provided at least on the upper surface of the sealing resin body, that is, on the side where the semiconductor chip is mounted, but it may be provided on both the upper surface and the lower surface.

〔作用〕[Effect]

大型化した半導体チップを樹脂封止したとき、半導体チ
ップに働く応力は、従来技術において配慮されていた半
導体チップ外側の封止用樹脂によって生ずる収縮応力よ
り半導体チップ上面部に位置する封止用樹脂が収縮しよ
うとしてチップに及ぼす応力の寄与がむしろ大である。
When a large semiconductor chip is encapsulated with resin, the stress acting on the semiconductor chip is reduced by the encapsulation resin located on the top surface of the semiconductor chip, rather than the shrinkage stress caused by the encapsulation resin on the outside of the semiconductor chip, which was considered in the conventional technology. The contribution of the stress exerted on the chip as it tries to shrink is rather large.

従って平面方向から見て半導体チップの内側部の封止用
樹脂の一部分に凹部を設けることにより、上記半導体チ
ップ上面部に位置する封止用樹脂の応力が緩和され、半
導体チップに働く収縮応力が低減され、半導体チップの
破損を防止し、かつリードフレームの支持能力は低下し
ない。
Therefore, by providing a recess in a portion of the sealing resin on the inside of the semiconductor chip when viewed from the plane, the stress in the sealing resin located on the upper surface of the semiconductor chip is alleviated, and the shrinkage stress acting on the semiconductor chip is reduced. damage to the semiconductor chip is prevented, and the supporting capacity of the lead frame is not reduced.

〔実施例〕〔Example〕

以下、本発明の一実施例を第1図により説明する。第1
図(a)は、樹脂封止半導体装置の平面透視図、第1図
(b)は同図(a)に示したX−X′部の断面図を表す
。10は8M1角の半導体チツブを示し、ボンディング
ワイヤ20を介してリードフレーム30に電気的に接続
され、封止樹脂40内側領域に位置する部分に凹所53
を機械加工により形成した。この凹所は縦および横が 7 、5mm、深さ1mmであり半導体チップ10上の
封止樹脂40の体積をおよそ半分にした。本実施例によ
れば、半導体チップ上面にある封止樹脂40の収縮応力
が緩和され、従来半導体チップ10角の配線が中心に向
い3.8μm変形移動していたものが、1.3μmとな
り、移動量を1/3に減少することができた。この応力
を減少させたことにより、半導体チップの破壊発生が防
止される。なお、本実施例では封止樹脂の上下両面に凹
所53.63を設けたが、少なくともチップ側すなわち
上面のみに凹所を設ければ本発明の効果が得られること
は言うまでもない。
An embodiment of the present invention will be described below with reference to FIG. 1st
FIG. 1(a) is a plan perspective view of a resin-sealed semiconductor device, and FIG. 1(b) is a sectional view taken along line X-X' shown in FIG. 1(a). Reference numeral 10 indicates an 8M1 square semiconductor chip, which is electrically connected to the lead frame 30 via the bonding wire 20 and has a recess 53 in a portion located inside the sealing resin 40.
was formed by machining. This recess had a length and width of 7.5 mm and a depth of 1 mm, and the volume of the sealing resin 40 on the semiconductor chip 10 was approximately halved. According to this embodiment, the shrinkage stress of the sealing resin 40 on the top surface of the semiconductor chip is alleviated, and the wires at the 10 corners of the semiconductor chip, which were conventionally deformed and moved by 3.8 μm toward the center, are reduced to 1.3 μm. We were able to reduce the amount of movement by 1/3. By reducing this stress, damage to the semiconductor chip is prevented. In this embodiment, the recesses 53 and 63 are provided on both the upper and lower surfaces of the sealing resin, but it goes without saying that the effects of the present invention can be obtained by providing recesses at least only on the chip side, that is, on the top surface.

第2図、第3図及び第4図は、それぞれ本発明の他の実
施例を示す。
FIGS. 2, 3 and 4 each show other embodiments of the invention.

第2図は、半導体チップのコーナ一部の上部に応力緩和
用の溝52を設けた樹脂封止半導体装置の平面図である
。半導体チップに働く応力は、チップ中心から遠ざかる
程大きくなり、チップ周辺部、特にコーナ一部で最大と
なる。従って本実施例のように少なくともチップコーナ
一部上に溝を設けることにより、応力に起因するチップ
の破壊故障率を低減することができた。
FIG. 2 is a plan view of a resin-sealed semiconductor device in which a groove 52 for stress relaxation is provided above a portion of a corner of a semiconductor chip. The stress acting on a semiconductor chip increases as it moves away from the center of the chip, and is greatest at the periphery of the chip, especially at the corners. Therefore, by providing a groove on at least a portion of the chip corner as in this embodiment, it was possible to reduce the chip breakdown failure rate due to stress.

第3図は、半導体チップの平面方向から見てその内側領
域に溝51.61を形成した樹脂封止半導体装置を示す
。第3図(、)はその平面図であり、第3図(b)及び
(Q)はそれぞれ同図(、)のy−y’ 、x−x’部
の断面図である。本実施例によれば半導体チップ上面に
ある封止用樹脂の収縮応力が緩和される。
FIG. 3 shows a resin-sealed semiconductor device in which grooves 51 and 61 are formed in the inner region of the semiconductor chip when viewed from the plane direction. FIG. 3(,) is a plan view thereof, and FIGS. 3(b) and 3(Q) are sectional views taken along lines y-y' and xx' in FIG. 3(,), respectively. According to this embodiment, the shrinkage stress of the sealing resin on the upper surface of the semiconductor chip is alleviated.

第4図は、第1図で示した半導体装置に封止樹脂板44
を接着した装置を示す。封止樹脂40内に空孔45を設
けた構造である。本実施例によれば半導体チップに働く
応力低減効果の他に、封止樹脂の機械的強度の増強、耐
湿性の向上等の効果がある。
FIG. 4 shows a sealing resin plate 44 for the semiconductor device shown in FIG.
This shows the device with the attached. It has a structure in which holes 45 are provided in the sealing resin 40. According to this embodiment, in addition to the effect of reducing the stress acting on the semiconductor chip, there are effects such as increasing the mechanical strength of the sealing resin and improving moisture resistance.

なお、本発明の封止用樹脂内に設けた溝形状は以上の実
施例で示したものに必ずしもとられれる必要は無く、U
型やV型等いかなる形状のものでもその効果は失われる
ものではない。溝のほかにも凹所、空孔についても同様
である。
Note that the groove shape provided in the sealing resin of the present invention does not necessarily have to be the same as that shown in the above embodiments;
No matter what shape it is, such as a V-shape or a V-shape, the effect will not be lost. The same applies to recesses and holes in addition to grooves.

〔発明の効果〕〔Effect of the invention〕

以上のように本発明によれば、半導体チップ上に位置す
る封止用樹脂に設けた溝、凹所、空孔等により半導体チ
ップに働く応力が低減でき、この応力によって引き起こ
される半導体チップの破壊を大幅に低減し、そのため樹
脂封止型半導体装置の信頼性向上の効果がある。
As described above, according to the present invention, the stress acting on the semiconductor chip can be reduced by the grooves, recesses, holes, etc. provided in the sealing resin located on the semiconductor chip, and the damage to the semiconductor chip caused by this stress can be reduced. This has the effect of improving the reliability of resin-sealed semiconductor devices.

また、本発明では、溝、凹所、空孔等を封止樹脂体の中
心部付近に設けているため、封止樹脂のリードフレーム
支持能力の劣化の問題が少なくなる。
Further, in the present invention, since the groove, recess, hole, etc. are provided near the center of the sealing resin body, the problem of deterioration of the lead frame supporting ability of the sealing resin is reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)は本発明の一実施例の樹脂封止半導体装置
の平面図、第1図(b)はその断面図。 第2図、第3図及び第4図はそれぞれ本発明の他の実施
例の樹脂封止半導体装置の平面図及び断面図、第5図(
a)は従来の樹脂封止半導体装置の平面図、第5図(b
)及び第5図(c)はその断面図である。 10・・・半導体チップ 20・・・ボンディングワイヤ
FIG. 1(a) is a plan view of a resin-sealed semiconductor device according to an embodiment of the present invention, and FIG. 1(b) is a sectional view thereof. 2, 3, and 4 are a plan view and a cross-sectional view of a resin-sealed semiconductor device according to another embodiment of the present invention, and FIG. 5 (
a) is a plan view of a conventional resin-sealed semiconductor device; FIG. 5(b) is a plan view of a conventional resin-sealed semiconductor device;
) and FIG. 5(c) are sectional views thereof. 10... Semiconductor chip 20... Bonding wire

Claims (1)

【特許請求の範囲】[Claims] 1、半導体チップを埋設する封止樹脂体の少なくとも上
面に、上記半導体チップ上の内側部の少なくとも一部に
凹部を設けたことを特徴とする樹脂封止型半導体装置。
1. A resin-sealed semiconductor device, characterized in that a recess is provided in at least a portion of the inner side of the semiconductor chip on at least the upper surface of a sealing resin body in which a semiconductor chip is embedded.
JP63172663A 1988-07-13 1988-07-13 Resin sealed type semiconductor device Pending JPH0223640A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63172663A JPH0223640A (en) 1988-07-13 1988-07-13 Resin sealed type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63172663A JPH0223640A (en) 1988-07-13 1988-07-13 Resin sealed type semiconductor device

Publications (1)

Publication Number Publication Date
JPH0223640A true JPH0223640A (en) 1990-01-25

Family

ID=15946067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63172663A Pending JPH0223640A (en) 1988-07-13 1988-07-13 Resin sealed type semiconductor device

Country Status (1)

Country Link
JP (1) JPH0223640A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0739583A1 (en) 1995-04-27 1996-10-30 Nihon Tensaiseito Kabushiki Kaisha Continuously assembled pots for raising and transplanting seedlings
EP0690499A3 (en) * 1994-06-30 1997-05-28 Digital Equipment Corp Molded plastic packaging for semiconductor chip without support
US5653055A (en) * 1995-01-31 1997-08-05 Nihon Tensaiseito Kabushiki Kaisha Continuously assembled pots for raising and transplanting seedlings
US5776800A (en) * 1994-06-30 1998-07-07 Hamburgen; William Riis Paddleless molded plastic semiconductor chip package
JP2019204819A (en) * 2018-05-21 2019-11-28 株式会社デンソー Electronic device
WO2021045205A1 (en) 2019-09-06 2021-03-11 日本甜菜製糖株式会社 Decay-resistant paper
CN113257751A (en) * 2020-02-12 2021-08-13 艾普凌科有限公司 Semiconductor device and method for manufacturing the same
JP2021132170A (en) * 2020-02-21 2021-09-09 エイブリック株式会社 Semiconductor device and manufacturing method thereof
WO2022044387A1 (en) 2020-08-25 2022-03-03 日本甜菜製糖株式会社 Method for controlling decomposition of corrosion-resistant paper
DE102022131655B4 (en) * 2021-12-27 2025-11-27 Texas Instruments Incorporated LOW-STRENGTH LASER-MODIFIED MOLD CAP PACKAGE AND METHOD FOR ITS MANUFACTURING

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0690499A3 (en) * 1994-06-30 1997-05-28 Digital Equipment Corp Molded plastic packaging for semiconductor chip without support
US5776800A (en) * 1994-06-30 1998-07-07 Hamburgen; William Riis Paddleless molded plastic semiconductor chip package
US5653055A (en) * 1995-01-31 1997-08-05 Nihon Tensaiseito Kabushiki Kaisha Continuously assembled pots for raising and transplanting seedlings
EP0739583A1 (en) 1995-04-27 1996-10-30 Nihon Tensaiseito Kabushiki Kaisha Continuously assembled pots for raising and transplanting seedlings
JP2019204819A (en) * 2018-05-21 2019-11-28 株式会社デンソー Electronic device
KR20220055480A (en) 2019-09-06 2022-05-03 니혼 텐사이 세이토 가부시키가이샤 inner paper
WO2021045205A1 (en) 2019-09-06 2021-03-11 日本甜菜製糖株式会社 Decay-resistant paper
CN113257751A (en) * 2020-02-12 2021-08-13 艾普凌科有限公司 Semiconductor device and method for manufacturing the same
JP2021128966A (en) * 2020-02-12 2021-09-02 エイブリック株式会社 Semiconductor device and method for manufacturing the same
JP2021132170A (en) * 2020-02-21 2021-09-09 エイブリック株式会社 Semiconductor device and manufacturing method thereof
WO2022044387A1 (en) 2020-08-25 2022-03-03 日本甜菜製糖株式会社 Method for controlling decomposition of corrosion-resistant paper
KR20230054822A (en) 2020-08-25 2023-04-25 니혼 텐사이 세이토 가부시키가이샤 Decomposition control method of inner paper
US12546063B2 (en) 2020-08-25 2026-02-10 Nippon Beet Sugar Manufacturing Co., Ltd. Method for controlling decomposition of corrosion-resistant paper
DE102022131655B4 (en) * 2021-12-27 2025-11-27 Texas Instruments Incorporated LOW-STRENGTH LASER-MODIFIED MOLD CAP PACKAGE AND METHOD FOR ITS MANUFACTURING

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