JPH02239609A - Solid electrolytic capacitor - Google Patents
Solid electrolytic capacitorInfo
- Publication number
- JPH02239609A JPH02239609A JP6022189A JP6022189A JPH02239609A JP H02239609 A JPH02239609 A JP H02239609A JP 6022189 A JP6022189 A JP 6022189A JP 6022189 A JP6022189 A JP 6022189A JP H02239609 A JPH02239609 A JP H02239609A
- Authority
- JP
- Japan
- Prior art keywords
- complex salt
- tcnq complex
- electrode
- amino
- salt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 17
- 239000007787 solid Substances 0.000 title claims abstract description 11
- 150000003839 salts Chemical class 0.000 claims abstract description 24
- 239000003792 electrolyte Substances 0.000 claims description 2
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 claims 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 7
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 abstract description 6
- 239000007784 solid electrolyte Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 229910052715 tantalum Inorganic materials 0.000 abstract description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 239000010936 titanium Substances 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-O guanidinium Chemical compound NC(N)=[NH2+] ZRALSGWEFCBTJO-UHFFFAOYSA-O 0.000 abstract 2
- 239000010407 anodic oxide Substances 0.000 abstract 1
- 238000007743 anodising Methods 0.000 abstract 1
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 15
- 239000011888 foil Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- -1 radical salt Chemical class 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- USVHXCUDFIVGGM-UHFFFAOYSA-N 2-amino-1,1-dimethylguanidine;hydroiodide Chemical compound I.CN(C)C(\N)=N\N USVHXCUDFIVGGM-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- HUWSZNZAROKDRZ-RRLWZMAJSA-N (3r,4r)-3-azaniumyl-5-[[(2s,3r)-1-[(2s)-2,3-dicarboxypyrrolidin-1-yl]-3-methyl-1-oxopentan-2-yl]amino]-5-oxo-4-sulfanylpentane-1-sulfonate Chemical compound OS(=O)(=O)CC[C@@H](N)[C@@H](S)C(=O)N[C@@H]([C@H](C)CC)C(=O)N1CCC(C(O)=O)[C@H]1C(O)=O HUWSZNZAROKDRZ-RRLWZMAJSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010294 electrolyte impregnation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- PFJMWGUDKKPHFR-UHFFFAOYSA-N methyl n,n-dimethylcarbamimidothioate;hydroiodide Chemical compound I.CSC(=N)N(C)C PFJMWGUDKKPHFR-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Electric Double-Layer Capacitors Or The Like (AREA)
Abstract
Description
[産業上の利用分野]
本発明は、良好な皮膜修復性を有する7,7.8.8−
テトラシアノキノジメタンがらなるイオンラジカル塩を
固体電解質とする固体電解コンデンサに関するものであ
る,
[従来の技術と問題点】
7.7.8.8−テトラシアノキノジメタン(以下、T
CNQと略す)からなるイオンラジカル塩を固体電解質
とする固体電解コンデンサとして、例えばキノリンある
いはインキノリンをカチオンとし、TCNQをアニ才ン
とするTCNQ#塩(特開昭58−191414号)を
加熱融解し,冷却固化したものを固体電解質したものが
良く知られている.なお、これらTCNQ!塩のカチオ
ンにおいて,そのN位は炭素数2〜l8までの中で選ば
れたアルキル基で置換されている.TCNQ錯塩を加熱
融解し,冷却固化するという方法は、エッチングを施さ
れたアルミニウム箔あるいはタンタル焼結体にTCNQ
m塩を融解状態で含浸することができるので、好ましい
ものである.しかし、その反面TCNQ錯塩の融解温度
が高温度であったり、または融解時間が長時間であると
、有機半導体であるTCNQ錯塩が分解し、絶縁体に変
質してしまうものである,また,冷却固化時にTCNQ
I塩が結晶化し、電極箔の多孔質部への充分な接触が得
られないという欠点を持っている.
[発明の目的1
しかるに、本発明は上述のような欠点を除去し得るもの
で、具体的には比抵抗値が小さい値を有し,熱的にも安
定である新規有機半導体(新規化合物》としての1−ア
ミノー3.3−ジメチルグアニジウムTCNQ1!塩を
固体電解質としたものである.これにより高性能で信穎
性の高い固体電解コンデンサを提供するものである.
[発明の概要】
本発明に係る固体電解コンデンサの基本的な構成は、陽
極酸化(化成)により表面に陽極酸化皮膜を有する弁作
用金属(例えば、アルミニウム、タンタル、チタンおよ
びこれらの合金)を第1の電極とし、第2の電極(対極
)との間に直接あるいはセバレータを介在させてTCN
Q1i塩からなる固体電解質を有するものである.TC
NQ錯塩としては上述したように1−アミノー3.3−
ジメチルグアニジウムT C N Q錯塩である.ここ
で、1−アミノ−3.3−ジメチルグアニジウムTCN
Q錯塩の構造式を示すと次のようになる.1−アミノ−
3.
3−ジメチルグアニジウムT
CNQ!塩の構造式
式[11中、mは1モルの錯塩に含まれる中性7,7.
8.8−テトラシアノキノジメタンのモル数に対応する
正の数(0.5〜1.5》を意味する.
次に、1−アミノ−3.3−ジメチルグアニジウムT
C N Qll塩の合成方法について述べる.0.01
モルのl,l−ジメチルチオ尿素をエチレングリコール
ジメチルエーテル溶媒中で0.Olモルのヨウ化メチル
と反応させることによって,1.1−ジメチル−S−メ
チルイソチオ尿素ヨウ化水素酸塩を得た.この0.Ol
モルのl.l−ジメチル−S−メチルイソチ才尿素ヨウ
化水素酸塩をエタノール溶媒中で0.012モルのヒド
ラジンヒドラードと反応させることにより、1−アミノ
ー3.3−ジメチルグアニジンーヨウ化水素酸塩を合成
した.この1−アミノー3.3〜ジメチルグアニジンー
ヨウ化水素酸塩の0,0025モルをアセトニトリルに
沸騰状態で溶解し,0.0025モルのT C N Q
m塩を溶解した沸騰状態のアセトニトリル溶液と混合す
る.その後、約lO時間、5℃で放置することにより、
1−アミノ−3.3−ジメチルグアニジウムT C N
Qil塩の針状結晶が得られる.この結晶を少量のア
セトニトリルで洗浄し,さらにエタノールで洗液が着色
しなくなるまで洗浄した後、エーテルで洗浄し、乾燥し
、固体電解コンデンサに適用する.1−アミノ−3.3
−ジメチルグアニジウムTCNQ!塩の比抵抗値は2.
38 [Ω・cm】であった.
[実施例]
次に,上述のようにして得た1−アミノ−3.3−ジメ
チルグアニジウムTCNQm塩を電解コンデンサに適用
した実施例について述べる.1−アミノ−3.3−ジメ
チルグアニジウムTCNQIi塩をアセトニトリル中に
溶解し.飽和溶液とする.次に、この溶液中にコンデン
サ素子を浸漬し,その後50〜60[’C]で真空乾燥
を行い、溶媒のアセトニトリルを飛散させた.この操作
を3回繰返し行なった.コンデンサ素子は電極として表
面を約lO倍にエッチングしたアルミニウム箔を用い、
さらに表面な化成処理した酸化皮膜を形成したものであ
る.電解質の含浸後にコロイダルカーボンを塗布し,そ
の後に銀ペーストを塗布し、リード線をハンダ付けし、
外装することにより定格1.0[μFlの陽極に対して
1. 1[μFl.損失2.4[Industrial Application Field] The present invention provides 7,7.8.8-
[Prior art and problems] 7.7.8.8-tetracyanoquinodimethane (hereinafter referred to as T
For example, as a solid electrolytic capacitor using an ionic radical salt consisting of CNQ (abbreviated as CNQ) as a solid electrolyte, for example, TCNQ# salt (JP 58-191414), which uses quinoline or inquinoline as a cation and TCNQ as an anionic acid, is heated and melted. However, it is well known that solid electrolytes are made by cooling and solidifying the material. In addition, these TCNQ! In the salt cation, the N-position is substituted with an alkyl group selected from 2 to 18 carbon atoms. The method of heating and melting TCNQ complex salt and solidifying it by cooling is to apply TCNQ to etched aluminum foil or tantalum sintered body.
This is preferable because it can be impregnated with m-salt in a molten state. However, on the other hand, if the melting temperature of the TCNQ complex salt is high or the melting time is long, the TCNQ complex salt, which is an organic semiconductor, will decompose and transform into an insulator. TCNQ during solidification
The disadvantage is that the I salt crystallizes and cannot make sufficient contact with the porous part of the electrode foil. [Objective of the Invention 1 However, the present invention can eliminate the above-mentioned drawbacks, and specifically provides a novel organic semiconductor (new compound) that has a small specific resistance value and is thermally stable.] The present invention uses 1-amino-3,3-dimethylguanidium TCNQ1! salt as a solid electrolyte.Thereby, a solid electrolytic capacitor with high performance and high reliability is provided. [Summary of the invention] The basic structure of the solid electrolytic capacitor according to the present invention is that a valve metal (for example, aluminum, tantalum, titanium, and alloys thereof) having an anodized film on the surface by anodization (chemical conversion) is used as the first electrode, TCN directly or with a separator interposed between it and the second electrode (counter electrode)
It has a solid electrolyte consisting of Q1i salt. T.C.
As mentioned above, the NQ complex salt is 1-amino-3.3-
It is a dimethylguanidium T C N Q complex salt. Here, 1-amino-3,3-dimethylguanidium TCN
The structural formula of Q complex salt is as follows. 1-amino-
3. 3-Dimethylguanidium T CNQ! Structural formula of the salt [11, m is a neutral 7,7.
It means a positive number (0.5 to 1.5) corresponding to the number of moles of 8.8-tetracyanoquinodimethane. Next, 1-amino-3.3-dimethylguanidium T
The method for synthesizing C N Qll salt will be described. 0.01
0.0 moles of l,l-dimethylthiourea in ethylene glycol dimethyl ether solvent. 1,1-dimethyl-S-methylisothiourea hydroiodide was obtained by reacting with 1 mole of methyl iodide. This 0. Ol
molar l. Synthesis of 1-amino-3,3-dimethylguanidine-hydriodide by reacting l-dimethyl-S-methylisothiurea hydroiodide with 0.012 moles of hydrazine hydride in an ethanol solvent. did. 0,0025 mol of this 1-amino-3.3-dimethylguanidine-hydriodide was dissolved in acetonitrile in a boiling state, and 0.0025 mol of T C N Q
Mix with the boiling acetonitrile solution containing the m-salt. After that, by leaving it at 5°C for about 10 hours,
1-Amino-3,3-dimethylguanidium TCN
Needle-shaped crystals of Qil salt are obtained. The crystals are washed with a small amount of acetonitrile, then washed with ethanol until the washing solution is no longer colored, then washed with ether, dried, and applied to solid electrolytic capacitors. 1-amino-3.3
-Dimethylguanidium TCNQ! The specific resistance value of salt is 2.
It was 38 [Ω・cm]. [Example] Next, an example will be described in which the 1-amino-3,3-dimethylguanidium TCNQm salt obtained as described above was applied to an electrolytic capacitor. Dissolve 1-amino-3,3-dimethylguanidium TCNQIi salt in acetonitrile. Make it a saturated solution. Next, the capacitor element was immersed in this solution, and then vacuum dried at 50 to 60['C] to scatter the acetonitrile solvent. This operation was repeated three times. The capacitor element uses aluminum foil whose surface is etched approximately 10 times as much as the electrode.
Furthermore, an oxide film is formed on the surface through chemical conversion treatment. After electrolyte impregnation, apply colloidal carbon, then apply silver paste, and solder the lead wires.
By packaging, the rating is 1.0 [μFl for an anode. 1 [μFl. loss 2.4
【%】の固体電解コン
デンサを得た.
上述のようにして得た本発明に係る固体電解コンデンサ
(定格25 [V]−1.0 [μF] )77)実施
例と、実施例と同様のコンデンサ素子に熱融解によ’l
N−n−プロビルーキノリンT C N Qm塩を含浸
して得た固体電解コンデンサの従来例との寿命特性比較
を第1表に示す.第1表中、静電容量値および損失角の
正接は周波数が120[Hzlでの値である.漏れ電流
は、定格電圧(25 [V] )印加l分後に測定した
値である.引続き、本発明の他の実施例について述べる
.■−アミノー3.3−ジメチルグアニジウムTCNQ
錯塩とラクトン系化合物、例えばγ−プチロラクトンの
化合物40 [mglを直径5. 0 [mm]のアル
ミニウムケースに充填し、180[”c]まで約lO抄
で加熱し、溶解した.その中にアルミニウム箔からなる
陽極箔と陰極箔をセバレー夕を介して巻回した巻取コン
デンサ素子を浸漬し、浸漬後約12秒で冷却した.なお
、電解質の含浸に先立ち、コンデンサ素子は180[’
c]の温度まで上昇させておいた.これにより、定格1
.0[μF]の陽極に対して1. 1 [μF]、損
失2.0E%1の固体電解コンデンサを得た.[効果]A solid electrolytic capacitor of [%] was obtained. The solid electrolytic capacitor (rated 25 [V] - 1.0 [μF]) 77) according to the present invention obtained as described above and the capacitor element similar to the example were heated by thermal melting.
Table 1 shows a comparison of the life characteristics of a solid electrolytic capacitor impregnated with N-n-probyl-quinoline T C N Qm salt and a conventional example. In Table 1, the capacitance value and the tangent of the loss angle are the values at a frequency of 120 [Hzl]. The leakage current is the value measured after 1 minute of applying the rated voltage (25 [V]). Next, other embodiments of the present invention will be described. ■-Amino-3,3-dimethylguanidium TCNQ
Complex salt and lactone compound, such as γ-butyrolactone compound 40 [mgl in diameter 5. It was filled into an aluminum case of 0 [mm] and heated to 180 ["c] at a rate of about 10 to melt it. An anode foil and a cathode foil made of aluminum foil were wound in the aluminum case through a separator. The capacitor element was immersed and cooled approximately 12 seconds after immersion.Before impregnating with the electrolyte, the capacitor element was heated to 180 ['
The temperature was raised to [c]. This results in a rating of 1
.. 1 for an anode of 0 [μF]. A solid electrolytic capacitor with a loss of 2.0E%1 was obtained. [effect]
Claims (1)
ニジウム・7,7,8,8−テトラシアノキノジメタン
錯塩を用いたことを特徴とする固体電解コンデンサ。(1) A solid electrolytic capacitor characterized in that a 1-amino-3,3-dimethylguanidium/7,7,8,8-tetracyanoquinodimethane complex salt is used as an electrolyte.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6022189A JPH02239609A (en) | 1989-03-13 | 1989-03-13 | Solid electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6022189A JPH02239609A (en) | 1989-03-13 | 1989-03-13 | Solid electrolytic capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02239609A true JPH02239609A (en) | 1990-09-21 |
Family
ID=13135892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6022189A Pending JPH02239609A (en) | 1989-03-13 | 1989-03-13 | Solid electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02239609A (en) |
-
1989
- 1989-03-13 JP JP6022189A patent/JPH02239609A/en active Pending
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