JPH0224794B2 - - Google Patents

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Publication number
JPH0224794B2
JPH0224794B2 JP61198061A JP19806186A JPH0224794B2 JP H0224794 B2 JPH0224794 B2 JP H0224794B2 JP 61198061 A JP61198061 A JP 61198061A JP 19806186 A JP19806186 A JP 19806186A JP H0224794 B2 JPH0224794 B2 JP H0224794B2
Authority
JP
Japan
Prior art keywords
graphite
base material
coating
ratio
graphite base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61198061A
Other languages
Japanese (ja)
Other versions
JPS6355182A (en
Inventor
Ryuichi Terasaki
Masahiko Nakajima
Kazumi Nozawa
Yoichi Ogata
Shinsei Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP61198061A priority Critical patent/JPS6355182A/en
Publication of JPS6355182A publication Critical patent/JPS6355182A/en
Publication of JPH0224794B2 publication Critical patent/JPH0224794B2/ja
Granted legal-status Critical Current

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  • Carbon And Carbon Compounds (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

〔産業上の利用分野〕 本発明は半導体の製造工程において使用される
サセプター、黒鉛ヒーター等の半導体処理治具の
構成材料として用いられるガラス状炭素被覆体の
製造法に関する。 〔従来の技術〕 サセプター、黒鉛ヒーターなどはシリコンなど
の半導体を製造する際に欠くことのできないもの
である。例えば、サセプターは高純度のシリコン
基板等の製品に接触するため、その製品を汚染し
ないと云う特性が要求される。又高温における塩
化水素雰囲気での耐エツチング性、ほぼ1200℃ま
での繰返し使用に耐える耐熱衝撃性も要求され
る。 更に、チヨクラルスキー法などで使用される黒
鉛ヒーターは、その加熱温度が1600℃を越えるの
で、黒鉛中に含まれる金属などの不純物が揮散し
易く、シリコンなどの半導体製品を汚染する欠点
があつた。 この欠点を補うものとして、従来から炭素成形
品、若しくはセラミツクス成形品の上に化学気相
蒸着(CVD)法による炭化ケイ素を被覆した被
覆体が使用されている(参考文献;特開昭56−
10921号公報)。 しかし、炭化ケイ素被覆体は炭化ケイ素皮膜と
炭素若しくはセラミツクスとの熱膨張係数が異な
つているため、繰返し使用による熱サイクルによ
り皮膜にクラツクが発生し、そのクラツクを通し
て炭素若しくはセラミツクス成型品から不純物が
浸み出し、製品を汚染する欠点を有していた。 これ等の欠点を克服する手段として、炭素又は
セラミツクス成形品に有機重合体の不完全熱分解
生成物を溶剤に溶解してなる溶液を塗布・乾燥し
た後それを不活性環境中で焼成することによつて
ガラス状炭素を被覆する提案がある(特公昭52−
39684号公報)。 この方法で得られるガラス状炭素被覆体は上記
炭化ケイ素被覆体と比較して皮膜の均一性が優れ
ており、更に皮膜の厚味が10μmと炭化ケイ素皮
膜の約100μmと比較して薄いため、熱サイクル
によるクラツク、剥離が生じ難いという数々の利
点を有している。 しかしながら、上記のガラス状炭素被覆体は膜
厚が薄いが故に、下地の黒鉛基材の影響を受け易
く、黒鉛基材の物性値のバラツキにより被覆が十
分に行なわれず、ピンホール等が発生し易い欠点
があつた。 〔発明が解決しようとする問題点〕 本発明は上記の欠点を解消し、ピンホールがき
わめて少ないガラス状炭素被覆体の製造法を提供
することを目的としている。 〔問題点を解決するための手段〕 本発明者等は鋭意研究を重ねた結果、上記のピ
ンホールの有無と、黒鉛基材との間に明確な相関
があることを把握し、ピンホールの発生を抑える
には黒鉛基材を厳選すれば良いことが判明した。 すなわち、本発明は、有機重合体の不完全熱分
解生成物(以下、PC物質という)を溶剤に溶解
してなる溶液を、黒鉛基材表面に塗布・乾燥した
後、それを不活性環境中で焼成して該黒鉛基材表
面をガラス状炭素で被覆するに際し、前記黒鉛基
材として、かさ密度が1.65/cm3以上、黒鉛の粒径
が100μm以下であり、かつ、開気孔率と全気孔
率との比が0.1以上0.8以下であるものを用いるこ
とを特徴とするガラス状炭素被覆体の製造法であ
る。 以下、更に詳しく本発明を説明する。 本発明は、PC物質を溶剤に溶かした溶液に、
必要ならば耐熱性無機質粉末を配合してスラリー
とし、それを特定の黒鉛基材の表面に塗布・乾燥
した後、焼成するものである。 本発明で用いる有機重合体は、塩化ビニル樹
脂、ポリビニルアルコール、油溶性フエノール樹
脂、アルキルフエノール樹脂、塩素化パラフイ
ン、塩素化ポリプロピレン、酢酸ビニル樹脂また
はポリカーボネート樹脂が好適である。 とくに不浸透性炭素被覆を施した物品の使途が
半導体製造用サセプターの場合には、不純物の面
から上記のうち塩化ビニル樹脂がとりわけ好まし
い。 これら有機重合体の熱分解はその種類を問わず
粒状品又は粉末を、不活性雰囲気例えばアルゴン
ガス中で200〜500℃で30分以上加熱して行う。し
かしながら、完全に炭化させないほうが好まし
い。この加熱の望ましい温度・時間は加熱装置お
よび有機重合体の種類によつて異なるが、分解生
成物の炭素原子と水素原子の重量比(C/H比)
が結果的に10〜25:1の範囲に入るよう実験によ
り定めればよい。 このようにして得られるPC物質に溶剤を加え
て溶かし、濃度200〜500g/の溶液を作る。溶
剤は溶解性の点から脂肪族塩素系の溶剤が好まし
い。不溶解物が残ればろ過して不溶解物を取除
く。 上記溶液に配合する耐熱性無機質粉末(以下、
骨材という)とは黒鉛、炭化珪素、アルミナなど
の物質であり、その形態は直径が50μm以下の球
形または不定形でよく、また、直径500μm以下
の棒状または繊維状でもよい。骨材として前記有
機重合体を炭化したものを用いると、最終的に被
覆層内がほぼ均質となるため不浸透性の点でとく
に好ましい。その平均粒径は20μm以下になるよ
う出来るだけ細かく粉砕したほうが塗布層の表面
状態の点で好ましい。このようにして得られた溶
液を黒鉛基材に塗布する。 このとき特に留意すべきことは黒鉛基材の選択
である。即ち、基材のかさ密度が1.65g/cm3を下
まわると、全体の気孔率が大きくなりすぎて、塗
布が均一には行なわれず、ピンホールが発生し易
くなる。 更に、黒鉛の粒径が100μmを越えると、たと
えかさ密度が1.65g/cm3以上であつたとしても、
非常に大きな径の開気孔が存在する確率が大きく
なり、これもまた塗布が均一に行なわれない原因
となる。 又、上記の2つの特性を有していても開気孔率
と、全気孔率の比が0.1より小さいと、PC物質を
塗布し焼成した際に、黒鉛基材のアンカー効果が
発現し難く、ガラス状炭素皮膜の剥離が生じて好
ましくない。前記比が0.8を越える場合は、やは
り、PC物質の塗布が困難となり、これもピンホ
ールの原因となる。 溶液の塗布方法としては、超音波含浸、はけ塗
り、スプレー、浸漬などがあり、塗布した後は、
温度50〜100℃程度の比較的低温で乾燥するのが
望ましい。 塗布後は、窒素、アルゴンなどの不活性雰囲気
や減圧雰囲気などの不活性環境中、温度800〜
1300℃程度で30分以上焼成すればPC物質をガラ
ス化できる。 〔実施例〕 以下、実施例および比較例により本発明を具体
的に説明する。 実施例 1〜7 表に示すように、かさ密度が1.65g/cm3以上で
あり、黒鉛の粒径が100μm以下であり、かつ、
開気孔率と全気孔率との比が0.1以上0.8以下であ
る黒鉛基材を用意し、これを10cm×50×1cmの板
状に加工した。つぎに、塩化ビニル樹脂(電気化
学工業(株)製SS−110)をアルゴン雰囲気下、380
℃の温度で40分間、不完全な熱分解を行なつた。 得られたPC物質を200g/の割合でトリクレ
ンに溶解して溶液とした。前記黒鉛基材をこの溶
液に浸漬することによつて黒鉛基材上にPC物質
の塗膜を設けた。 これを真空中で温度1200℃で45分間の焼成を行
ない、ガラス状炭素被覆体の試験片を得た。これ
ら試験片のガラス状炭素被膜の厚さはいずれも
5μmであつた。 得られた試験片の表裏全面を100倍の光学顕微
鏡で観察することによりピンホールの数を算え
た。その結果、表に示すとおりピンホールは皆無
であつた。 比較例 1〜7 表に示すとおり、比較例1および6は黒鉛基材
のかさ密度が1.65g/cm3未満のものを用いた。比
較例2,6および7は黒鉛基材中に粒径が100μ
mを越える大きな黒鉛粒子を含むものを用いた。
比較例3は黒鉛基材の開気孔率と全気孔率の比が
0.1未満のものを用いた。比較例4および5は黒
鉛基材の開気孔率と全気孔率の比が0.8を越える
ものを用いた。 上記の外は実施例と違いはなく、実施例1〜7
に準拠して行なつた。その結果、表に示すとおり
試験片1枚当り1〜20個のピンホールが観察され
た。 なお、上記実施例および比較例におけるかさ密
度、最大粒径および開気孔率と全気孔率の比は下
記の方法により測定した。 かさ密度の測定法…まず前記黒鉛基材を温度
110±5℃の空気浴中で約2時間保ち、これをデ
シケータ中で室温まで冷却した後、ただちに、重
さW(g)をはかつた。次に、黒鉛基材の寸法を
はかり、体積V(cm3)を計算した。次にかさ密度
=W/Vの式からかさ密度を計算した。 最大粒径の測定法…まず、黒鉛基材表面をバフ
鏡面研磨した。次に100倍の偏光顕微鏡により、
表面を観察し、無作為に選んだ20個の結晶粒の長
軸と短軸の和を2で割つた値をそれぞれの粒径と
した。この内、その値が最大となるものを、最大
粒径とした。 開気孔率と全気孔率との比の測定法…まず、黒
鉛の真比重を2.26と仮定。次に前記黒鉛材のかさ
密度を上記の方法で求めた後に、20±5℃の水中
に3時間以上保持し、これを直径1mm以下の針金
で水中につるしたまま重量を求め、針金の重量を
差引いた飽水水中重量(W2、g)を求めた。つ
いで、黒鉛基材を水中から取出し、湿布で手早く
表面をぬぐい水滴を除去した後、飽水重量(W3,
g)を求めた。黒鉛基材の乾燥重量をW1(g)と
すると水中見掛比重dWはdW=W1/(W3−W2)
となる。 次に、開気孔率は、かさ比重をdとすると、
(dW−d)/dW×100(%)で与えられる。 又、全気孔率はd/2.26×100(%)で与えられ
るから、開気孔率と、全気孔率の比は dW−d/dW×100×2.26/d×100=(dW−d)×2.26/
dW×d となる。
[Industrial Application Field] The present invention relates to a method for manufacturing a glassy carbon coating used as a constituent material of semiconductor processing jigs such as susceptors and graphite heaters used in semiconductor manufacturing processes. [Prior Art] Susceptors, graphite heaters, and the like are indispensable when manufacturing semiconductors such as silicon. For example, since the susceptor comes into contact with a product such as a high-purity silicon substrate, it is required to have the property of not contaminating the product. It is also required to have etching resistance in a hydrogen chloride atmosphere at high temperatures and thermal shock resistance that can withstand repeated use up to approximately 1200°C. Furthermore, since the graphite heater used in the Czyochralski method has a heating temperature of over 1,600°C, impurities such as metals contained in the graphite easily volatilize, which has the disadvantage of contaminating semiconductor products such as silicon. Ta. To compensate for this drawback, a coating in which silicon carbide is coated on a carbon molded product or a ceramic molded product using a chemical vapor deposition (CVD) method has been used.
Publication No. 10921). However, since the silicon carbide coating and the carbon or ceramics in the silicon carbide coating have different coefficients of thermal expansion, cracks occur in the coating due to thermal cycles caused by repeated use, and impurities from the carbon or ceramic molded product seep through the cracks. This has the disadvantage that it oozes out and contaminates the product. As a means to overcome these drawbacks, a solution prepared by dissolving the incomplete thermal decomposition product of an organic polymer in a solvent is applied to a carbon or ceramic molded product, dried, and then fired in an inert environment. There is a proposal to coat glassy carbon by
Publication No. 39684). The glassy carbon coated body obtained by this method has superior film uniformity compared to the silicon carbide coated body described above, and the film thickness is 10 μm, which is thinner than the silicon carbide film, which is about 100 μm. It has many advantages in that it is resistant to cracking and peeling due to thermal cycles. However, because the above-mentioned glassy carbon coating is thin, it is easily affected by the underlying graphite base material, and due to variations in the physical properties of the graphite base material, the coating may not be sufficient and pinholes may occur. There was a simple flaw. [Problems to be Solved by the Invention] An object of the present invention is to eliminate the above-mentioned drawbacks and provide a method for producing a glassy carbon coating with extremely few pinholes. [Means for Solving the Problems] As a result of extensive research, the present inventors have found that there is a clear correlation between the presence or absence of pinholes and the graphite base material. It has been found that in order to suppress the occurrence, it is necessary to carefully select the graphite base material. That is, in the present invention, a solution obtained by dissolving an incomplete thermal decomposition product of an organic polymer (hereinafter referred to as PC substance) in a solvent is applied to the surface of a graphite base material, dried, and then placed in an inert environment. When coating the surface of the graphite base material with glassy carbon by firing with This is a method for producing a glassy carbon coated body, characterized in that a glassy carbon coated body having a ratio to porosity of 0.1 or more and 0.8 or less is used. The present invention will be explained in more detail below. The present invention provides a solution in which a PC substance is dissolved in a solvent.
If necessary, a heat-resistant inorganic powder is mixed to form a slurry, which is applied to the surface of a specific graphite base material, dried, and then fired. The organic polymer used in the present invention is preferably vinyl chloride resin, polyvinyl alcohol, oil-soluble phenol resin, alkylphenol resin, chlorinated paraffin, chlorinated polypropylene, vinyl acetate resin, or polycarbonate resin. In particular, when the article coated with impermeable carbon is used as a susceptor for semiconductor manufacturing, vinyl chloride resin is particularly preferred from the viewpoint of impurities. Thermal decomposition of these organic polymers is carried out by heating granular products or powders of any type at 200 to 500° C. for 30 minutes or more in an inert atmosphere, such as argon gas. However, it is preferable not to completely carbonize. The desired temperature and time for this heating vary depending on the heating device and the type of organic polymer, but the weight ratio of carbon atoms to hydrogen atoms (C/H ratio) of the decomposition product
may be determined by experiment so that the ratio falls within the range of 10 to 25:1. A solvent is added to the PC substance obtained in this way and dissolved to form a solution with a concentration of 200 to 500 g/g. The solvent is preferably an aliphatic chlorine solvent from the viewpoint of solubility. If any undissolved matter remains, filter it to remove it. Heat-resistant inorganic powder (hereinafter referred to as
Aggregate) is a substance such as graphite, silicon carbide, alumina, etc., and its form may be spherical or irregular with a diameter of 50 μm or less, or rod-like or fibrous with a diameter of 500 μm or less. It is particularly preferable to use a carbonized organic polymer as the aggregate, since the interior of the coating layer will ultimately be substantially homogeneous, resulting in impermeability. From the viewpoint of the surface condition of the coating layer, it is preferable to grind the particles as finely as possible so that the average particle size is 20 μm or less. The solution thus obtained is applied to a graphite substrate. At this time, particular attention should be paid to the selection of the graphite base material. That is, if the bulk density of the base material is less than 1.65 g/cm 3 , the overall porosity becomes too large, and the coating is not uniformly applied, making pinholes more likely to occur. Furthermore, if the particle size of graphite exceeds 100 μm, even if the bulk density is 1.65 g/cm 3 or more,
The probability of the presence of open pores of very large diameter increases, which also causes uneven coating. In addition, even if it has the above two characteristics, if the ratio of open porosity to total porosity is less than 0.1, the anchoring effect of the graphite base material will be difficult to express when the PC material is applied and fired. This is not preferable because the glassy carbon film peels off. If the ratio exceeds 0.8, it becomes difficult to apply the PC material, which also causes pinholes. Methods for applying the solution include ultrasonic impregnation, brushing, spraying, and dipping.
It is desirable to dry at a relatively low temperature of about 50 to 100°C. After coating, the temperature should be 800°C or more in an inert environment such as nitrogen or argon, or a reduced pressure atmosphere.
PC material can be vitrified by firing at around 1300℃ for 30 minutes or more. [Example] Hereinafter, the present invention will be specifically explained with reference to Examples and Comparative Examples. Examples 1 to 7 As shown in the table, the bulk density is 1.65 g/cm 3 or more, the graphite particle size is 100 μm or less, and
A graphite base material having a ratio of open porosity to total porosity of 0.1 or more and 0.8 or less was prepared and processed into a plate shape of 10 cm x 50 x 1 cm. Next, vinyl chloride resin (SS-110 manufactured by Denki Kagaku Kogyo Co., Ltd.) was heated at 380° C. under an argon atmosphere.
Incomplete pyrolysis was carried out for 40 minutes at a temperature of °C. The obtained PC substance was dissolved in trichlene at a rate of 200 g/ml to form a solution. A coating film of the PC material was provided on the graphite substrate by immersing the graphite substrate in this solution. This was baked in a vacuum at a temperature of 1200°C for 45 minutes to obtain a test piece of a glassy carbon coated body. The thickness of the glassy carbon coating on these specimens is
It was 5 μm. The number of pinholes was calculated by observing the entire front and back surfaces of the obtained test piece using a 100x optical microscope. As a result, as shown in the table, there were no pinholes. Comparative Examples 1 to 7 As shown in the table, in Comparative Examples 1 and 6, graphite base materials having a bulk density of less than 1.65 g/cm 3 were used. Comparative Examples 2, 6 and 7 have a particle size of 100μ in the graphite base material.
A material containing large graphite particles exceeding m was used.
Comparative Example 3 has a ratio of open porosity to total porosity of the graphite base material.
A value less than 0.1 was used. Comparative Examples 4 and 5 used graphite base materials in which the ratio of open porosity to total porosity exceeded 0.8. Other than the above, there is no difference from Examples 1 to 7.
This was done in accordance with the. As a result, as shown in the table, 1 to 20 pinholes were observed per test piece. In addition, the bulk density, maximum particle diameter, and ratio of open porosity to total porosity in the above Examples and Comparative Examples were measured by the following methods. Measuring method of bulk density...First, the graphite base material is heated to
It was kept in an air bath at 110±5° C. for about 2 hours, cooled to room temperature in a desiccator, and immediately weighed W (g). Next, the dimensions of the graphite base material were measured, and the volume V (cm 3 ) was calculated. Next, the bulk density was calculated from the formula: bulk density=W/V. Method for measuring maximum particle size: First, the surface of the graphite base material was buffed to a mirror finish. Next, using a 100x polarized light microscope,
The surface was observed and the sum of the long and short axes of 20 randomly selected crystal grains divided by 2 was determined as the grain size of each grain. Among these, the one with the largest value was defined as the maximum particle size. How to measure the ratio of open porosity to total porosity... First, assume that the true specific gravity of graphite is 2.26. Next, after determining the bulk density of the graphite material using the above method, it was kept in water at 20±5°C for more than 3 hours, and its weight was determined while it was suspended in water using a wire with a diameter of 1 mm or less. The weight in saturated water (W 2 , g) was determined by subtracting the weight. Next, the graphite substrate was taken out of the water, the surface was quickly wiped with a compress to remove water droplets, and the saturated weight (W 3 ,
g) was determined. If the dry weight of the graphite base material is W 1 (g), the apparent specific gravity in water dW is dW = W 1 / (W 3 − W 2 )
becomes. Next, the open porosity is given by the bulk specific gravity as d.
It is given by (dW - d)/dW x 100 (%). Also, since the total porosity is given by d/2.26×100 (%), the ratio of open porosity to total porosity is dW−d/dW×100×2.26/d×100=(dW−d)× 2.26/
It becomes dW×d.

【表】【table】

〔発明の効果〕〔Effect of the invention〕

本発明のガラス状炭素被覆体の製造法はピンホ
ールがないので、黒鉛基材から不純物が浸み出し
てくるおそれがなく、とくに半導体処理治具の構
成材料として適している。
Since the manufacturing method of the glassy carbon coating of the present invention has no pinholes, there is no fear that impurities will seep out from the graphite base material, and it is particularly suitable as a constituent material for semiconductor processing tools.

Claims (1)

【特許請求の範囲】[Claims] 1 有機重合体の不完全熱分解生成物を溶剤に溶
解してなる溶液を、黒鉛基材表面に塗布・乾燥し
た後、それを不活性環境中で焼成して該黒鉛基材
表面をガラス状炭素で被覆するに際し、前記黒鉛
基材として、かさ密度が1.65/cm3以上、黒鉛の粒
径が100μm以下であり、かつ、開気孔率と全気
孔率との比が0.1以上0.8以下であるもものを用い
ることを特徴とするガラス状炭素被覆体の製造
法。
1 A solution prepared by dissolving an incomplete thermal decomposition product of an organic polymer in a solvent is applied to the surface of a graphite substrate and dried, and then baked in an inert environment to make the surface of the graphite substrate glassy. When coating with carbon, the graphite base material has a bulk density of 1.65/cm 3 or more, a graphite particle size of 100 μm or less, and a ratio of open porosity to total porosity of 0.1 to 0.8. A method for producing a glassy carbon coated body, characterized by using peach.
JP61198061A 1986-08-26 1986-08-26 Glassy carbon coated body Granted JPS6355182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61198061A JPS6355182A (en) 1986-08-26 1986-08-26 Glassy carbon coated body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61198061A JPS6355182A (en) 1986-08-26 1986-08-26 Glassy carbon coated body

Publications (2)

Publication Number Publication Date
JPS6355182A JPS6355182A (en) 1988-03-09
JPH0224794B2 true JPH0224794B2 (en) 1990-05-30

Family

ID=16384877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61198061A Granted JPS6355182A (en) 1986-08-26 1986-08-26 Glassy carbon coated body

Country Status (1)

Country Link
JP (1) JPS6355182A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0723271B2 (en) * 1990-06-20 1995-03-15 イビデン株式会社 Glassy carbon coated article
EP3514257A1 (en) * 2018-01-18 2019-07-24 Heraeus GMSI LLC Process for manufacturing a silicon carbide coated body

Also Published As

Publication number Publication date
JPS6355182A (en) 1988-03-09

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