JPH02250954A - Production of mask for sputtering and substrate with patterned coating film formed by sputtering - Google Patents
Production of mask for sputtering and substrate with patterned coating film formed by sputteringInfo
- Publication number
- JPH02250954A JPH02250954A JP7145189A JP7145189A JPH02250954A JP H02250954 A JPH02250954 A JP H02250954A JP 7145189 A JP7145189 A JP 7145189A JP 7145189 A JP7145189 A JP 7145189A JP H02250954 A JPH02250954 A JP H02250954A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- mask
- substrate
- edge
- coating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/23—Mixtures
- C03C2217/231—In2O3/SnO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は例えば液晶デイスプレィで代表される製造にお
いて導電性被膜に限らす滞電可能な材料のスパッタリン
グ被膜、例えばインジウム・錫・オキサイ）’（Ｉ−Ｔ
・０）をスパッタリング法でがラス等の基板表面に／母
ターン形成する場合に用いられるスａＪ？ツタリング用
マスクおよびこのマスクを用いたノ９ターン化されたス
ノ母ツタリング被膜を有する液晶などの表示装置用基板
で代表される基板の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention is applicable to sputtering coatings of materials capable of storing electricity, such as indium, tin, oxide, etc., which are limited to conductive coatings in the manufacture of, for example, liquid crystal displays. I-T
・0) is used when forming a master turn on the surface of a substrate such as a lath using a sputtering method. The present invention relates to a vine ring mask and a method of manufacturing a substrate, typified by a substrate for a display device such as a liquid crystal display device, having a 9-turn snow vine vine coating using this mask.
（従来の技術）
ガラス基板ｆ１面に導電性被膜（Ｉ−Ｔ−０等）をスパ
ッタリング法で／譬ターン化形成する場合、従来、所定
の開口部を設けたトレイ上にがラス基板を載置し、この
開口部を介して導電性被膜をスパッタリング法により上
記ガラス基板表面に被着させる方法が採用されている。(Prior art) When forming a conductive film (IT-0, etc.) on the f1 surface of a glass substrate by sputtering/patterning, conventionally, a glass substrate is placed on a tray with a predetermined opening. A method is adopted in which a conductive film is deposited on the surface of the glass substrate by sputtering through the opening.
（発明が解決しようとする課Ｍ）
しかし、上記従来の方法では第５図に示す如くスパッタ
リング工程時に基板１の表面に電荷が蓄積し、その電荷
が大きくなると基板ｌを固定しているトレイ２との間で
放電が発生し、スノ母ツタリング被膜３の縁部３ａが破
壊され所望のスパッタリング被膜３のノ４ターンが得ら
れないという問題がおりた。(Problem M to be Solved by the Invention) However, in the conventional method described above, as shown in FIG. There was a problem in that the edge 3a of the sputtering coating 3 was destroyed and the desired sputtering coating 3 could not be formed into a desired shape.
上記従来法の欠点を改善する方法として第６図に示すよ
うにトレイ２を基板１表面から例えば０．１−以上離し
て設け、放電を防止する方法も提案されているが、その
場合はスパッタリング被膜がトレイ２の下方に回シ込ん
だ状態で形成されるため最終的に得られるスパッタリン
グ被膜３の周縁部３＆が一ケた状態となり、製品として
好ましくない。As a method to improve the drawbacks of the conventional method described above, a method has been proposed in which the tray 2 is provided at a distance of 0.1 or more from the surface of the substrate 1 to prevent discharge, as shown in FIG. Since the coating is formed in a state where it is recessed into the lower part of the tray 2, the peripheral edge 3& of the sputtered coating 3 finally obtained is in a state where there is only one line, which is not desirable as a product.
したがりて、本発明はスパッタリング法によシ塗布され
るスパッタリング被膜の縁部を、従来の如く破損又は−
ヶのおそれなく、明瞭に形成することを可能にするスフ
４ツタリング用マスクを提供することを目的とする。Accordingly, the present invention provides a method to prevent the edges of sputtered coatings applied by sputtering from being damaged or -
To provide a mask for suffix 4 tattering, which enables clear formation without fear of scratches.
（１１題を解決するための手段）
本発明は上記目的達成のため、開口部の縁部がスパッタ
リング工程時に放電を生じさせない特定の形状に形成さ
れたマスクを使用するという手段を講じた。(Means for Solving Problem 11) In order to achieve the above object, the present invention takes a measure of using a mask in which the edges of the openings are formed in a specific shape that does not cause discharge during the sputtering process.
すなわち１本発明はスパッタリング被膜が形成されるべ
き基板の面に密着される側の開口縁部が巾１０μｍ以上
に亘って略チー７９−状に切欠されていることを特徴と
するスパッタリング用マスクを提供するものである。Specifically, the present invention provides a sputtering mask characterized in that the edge of the opening on the side that is in close contact with the surface of the substrate on which the sputtering film is to be formed is cut out in a substantially chi-shaped shape over a width of 10 μm or more. This is what we provide.
なお−上記テーパー状の切欠部は通常のウェットエツチ
ング法によ多形成させ九ものでもよい。Incidentally, the above-mentioned tapered notch may be formed in multiple forms by a conventional wet etching method.
また、各々の材質はマスクとスパッタリング被あるとを
問うものではない。Further, it does not matter whether each material is used for sputtering with the mask.
（作用）
本発明のスパッタリング用マスクにおいてはスノ臂ツタ
リング被膜形成用基板の面に密着する側の開口縁部が略
テーパー状に切欠されているため。(Function) In the sputtering mask of the present invention, the edge of the opening on the side that comes into close contact with the surface of the substrate for forming the snot-shaped coating is cut out in a substantially tapered shape.
スパッタリング被膜との間の放電によりスパッタリング
被膜が形成されない場所をテーノ９−状に切欠された部
分に特定でき、テーノｊ−状に切欠されていない部分と
の間でス／４’ツタリング被膜の境界が明瞭となるノ臂
ターンを形成する事が出来る。The area where the sputtering film is not formed due to the discharge between the sputtering film and the sputtering film can be identified in the Teno 9-shaped cutout area, and the boundary between the Teeno J-shaped part and the part where the sputtering film is not formed due to the discharge between the sputtering film and the sputtering film can be identified. It is possible to form a noel turn with a clear rotation.
（実施例） 以下、本発明を図示の実施例を参照して説明する。(Example) Hereinafter, the present invention will be explained with reference to the illustrated embodiments.
第２図は本発明に係わるスノ皆ツタリング被膜スパッタ
リング用マスク１１の使用例を示すものであって、ガラ
ス基板１２下面にセットされ、この状態でスパッタリン
グ被膜のスパッタリングがおこなわれる。なお１本図中
、１３は敵晶表示区域、１４はス・臂ツタリング被膜（
例え１ｊＩ−Ｔ・０）形成区域である。FIG. 2 shows an example of the use of the mask 11 for sputtering a sputtering film according to the present invention, which is set on the lower surface of a glass substrate 12, and sputtering of a sputtering film is performed in this state. In this figure, 13 is the enemy crystal display area, and 14 is the knee stumbling coating (
For example, 1jI-T・0) is the formation area.
上記マスク１１は第１図に示す如く、基板１２の下面に
密着される側の開口縁部１１ｈに巾Ｗ＝１０μｍ゛以上
に亘って略チー／４′−状の切欠部ＪＪｂが形成されて
いる。なお、このマスク１ノは例えは厚み０．１園前後
の金属板例えばコバールその地鉄系材料からなるもので
ある。この切欠部１ ｌ ｂの形成方法としては第３図
に示す如く金属板１１ａの上下Ｉｌｌ定部分にレジスト
パターン１５を形成し、上下両画からエツチング液を吹
き付けることにより自然にチー／４−状に形成すること
ができる。As shown in FIG. 1, the mask 11 has a substantially chi/4'-shaped cutout JJb having a width W=10 μm or more formed in the opening edge 11h on the side that is in close contact with the lower surface of the substrate 12. There is. The mask 1 is made of a metal plate, such as Kovar, or other iron-based material, with a thickness of about 0.1 mm. As shown in FIG. 3, the method for forming the notch 1lb is to form a resist pattern 15 on the upper and lower portions of the metal plate 11a, and then spray the etching solution from both the upper and lower portions to create a natural chi/4-shaped pattern. can be formed into
勿論、ａの方法で、このようなテーパー状切欠部１１ｂ
を形成してもよい。Of course, by the method a, such a tapered notch 11b
may be formed.
このようなテーパー状切欠部ＪＪｂを形成したマスク１
１は第４図に示すように、ガラス基板１２の下面に固定
用マグネット１６を用いて密着固定される。なお、本図
中１７はガラス基板１２を支持するトレイであり、場合
によっては特に用いなくてもよく、又はマスク１ノと一
体的につくってもよい。次に、この状態で従来と同様に
してスパッタリングをおこない所望のスパッタリング被
膜１８をこのマスク１ノの開口部に形成させる。Mask 1 with such a tapered notch JJb formed
1 is closely fixed to the lower surface of the glass substrate 12 using a fixing magnet 16, as shown in FIG. In addition, in this figure, 17 is a tray that supports the glass substrate 12, and depending on the case, it may not be particularly necessary to use it, or it may be made integrally with the mask 1no. Next, in this state, sputtering is performed in the same manner as in the conventional method to form a desired sputtered film 18 in the openings of this mask 1.
このスパッタリング工程の間において、マスク７７の開
口縁部ＪＪａはテーノ母−状に切欠されているため、こ
の縁部で放電が生じスパッタリング被膜１８の縁部を破
損させるというようなこともなく、極めて明瞭な縁部を
有する所望のスパッタリング被膜１８を形成することが
できる。During this sputtering process, since the opening edge JJa of the mask 77 is cut out in the shape of a Teno matrix, there is no possibility that discharge will occur at this edge and damage the edge of the sputtering film 18. A desired sputtered coating 18 with sharp edges can be formed.
（発明の効果）
本発明のスパッタリング用マスクはス／４’ ７タリン
グ被膜が形成される基板の面に密着される側の開口縁部
が巾１０μｍ以上に亘って略テーパー状に切欠されてい
るため、これを用いてスｉ４ツタリングをおζなり九場
合は、従来の如き放電によるスパッタリング被膜縁部の
破損が生ずることなく、歳質のス・ぐツタリング被膜を
精度良く形成することが可能となる。(Effects of the Invention) In the sputtering mask of the present invention, the edge of the opening on the side that is in close contact with the surface of the substrate on which the sputtering film is formed is cut out in a substantially tapered shape over a width of 10 μm or more. Therefore, when using this method for sputtering, it is possible to form a aged sputtering film with high precision without damaging the edges of the sputtering film due to electric discharge as in the conventional method. Become.
第１図は本発明に係わるス／４ツタリング用マスクの断
面図、第２図は本発明のマスクを使用形態を説明する平
面図、第３図線第１図に示したマスクの製造例を示す１
部断函図、第４図は本発明のマスクの使用形態を示す断
面図１．菖５図は従来の被膜のスパッタリング法による
形成例を示す断面図。
第ｊ因は第５図に示す方法の変形例を示す断面図である
。
１・・・基板、２・・・トレイ、３・・・スパッタリン
グ被１４、Ｊａ・・・縁部、 Ｊ Ｊ・・・スノ臂ツタ
リング用マスク。
１１１・・・開口縁部、ＺＪｂ・・・切欠部、Ｉｌｃ・
・・金属板、１２・・・ガラス基板、Ｉｓ・・・液晶表
示区域。
１４・・・スパッタリング液腺形成区域、Ｊ５・・・レ
ジストパターン、１６・・・固定用マグネット、１７・
・・トレイ、１８・・・スパッタリング被膜。FIG. 1 is a sectional view of a mask for S/4 tsuttering according to the present invention, FIG. 2 is a plan view illustrating how the mask of the present invention is used, and FIG. 3 shows an example of manufacturing the mask shown in FIG. 1. Show 1
FIG. 4 is a cross-sectional view showing how the mask of the present invention is used. Figure 5 is a cross-sectional view showing an example of forming a film by a conventional sputtering method. The jth factor is a sectional view showing a modification of the method shown in FIG. DESCRIPTION OF SYMBOLS 1...Substrate, 2...Tray, 3...Sputtering target 14, Ja...Edge, JJ...Mask for snorting. 111... Opening edge, ZJb... Notch, Ilc.
...Metal plate, 12...Glass substrate, Is...Liquid crystal display area. 14... Sputtering liquid gland formation area, J5... Resist pattern, 16... Fixing magnet, 17.
...Tray, 18... Sputtering coating.
Claims (2)
以上に亘って略テーパー状に切欠されていることを特徴
とするスパッタリング用マスク。(1) The width of the opening edge on the side that is in close contact with the surface of the substrate is 10 μm.
A sputtering mask characterized by being cut out in a generally tapered shape.
に切欠されたスパッタリング用マスクを基板に密着して
スパッタリングを施す事を特徴とするパターン化された
スパッタリング被膜を有する基板の製造方法。(2) A method for manufacturing a substrate having a patterned sputtering film, characterized in that sputtering is performed by closely contacting the substrate with a sputtering mask in which the opening edges are notched in a substantially tapered shape over a width of 10 μm or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7145189A JPH02250954A (en) | 1989-03-23 | 1989-03-23 | Production of mask for sputtering and substrate with patterned coating film formed by sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7145189A JPH02250954A (en) | 1989-03-23 | 1989-03-23 | Production of mask for sputtering and substrate with patterned coating film formed by sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02250954A true JPH02250954A (en) | 1990-10-08 |
Family
ID=13460938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7145189A Pending JPH02250954A (en) | 1989-03-23 | 1989-03-23 | Production of mask for sputtering and substrate with patterned coating film formed by sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02250954A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016121652A1 (en) * | 2015-01-29 | 2016-08-04 | シャープ株式会社 | Film-forming mask, film-forming device, and film-forming method |
| JP2017531564A (en) * | 2014-09-17 | 2017-10-26 | エリコン・サーフェス・ソリューションズ・アクチェンゲゼルシャフト，プフェフィコーンＯｅｒｌｉｋｏｎ Ｓｕｒｆａｃｅ Ｓｏｌｕｔｉｏｎｓ Ａｇ， Ｐｆａｅｆｆｉｋｏｎ | Holding device for surface treatment of bar cutter |
-
1989
- 1989-03-23 JP JP7145189A patent/JPH02250954A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017531564A (en) * | 2014-09-17 | 2017-10-26 | エリコン・サーフェス・ソリューションズ・アクチェンゲゼルシャフト，プフェフィコーンＯｅｒｌｉｋｏｎ Ｓｕｒｆａｃｅ Ｓｏｌｕｔｉｏｎｓ Ａｇ， Ｐｆａｅｆｆｉｋｏｎ | Holding device for surface treatment of bar cutter |
| WO2016121652A1 (en) * | 2015-01-29 | 2016-08-04 | シャープ株式会社 | Film-forming mask, film-forming device, and film-forming method |
| US9982339B2 (en) | 2015-01-29 | 2018-05-29 | Sharp Kabushiki Kaisha | Film-forming mask, film-forming device, and film-forming method |
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