JPH02258669A - Production of oxide superconductor - Google Patents
Production of oxide superconductorInfo
- Publication number
- JPH02258669A JPH02258669A JP1082147A JP8214789A JPH02258669A JP H02258669 A JPH02258669 A JP H02258669A JP 1082147 A JP1082147 A JP 1082147A JP 8214789 A JP8214789 A JP 8214789A JP H02258669 A JPH02258669 A JP H02258669A
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- irradiated
- laser
- oxide superconductor
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000001301 oxygen Substances 0.000 claims abstract description 31
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 23
- 238000001816 cooling Methods 0.000 claims abstract description 17
- 230000008018 melting Effects 0.000 claims abstract description 14
- 238000002844 melting Methods 0.000 claims abstract description 14
- 239000000126 substance Substances 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 abstract description 30
- 239000000758 substrate Substances 0.000 abstract description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 6
- 230000001965 increasing effect Effects 0.000 abstract description 5
- 239000007788 liquid Substances 0.000 abstract description 5
- 238000002425 crystallisation Methods 0.000 abstract description 4
- 230000008025 crystallization Effects 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 230000015271 coagulation Effects 0.000 abstract 2
- 238000005345 coagulation Methods 0.000 abstract 2
- 238000007711 solidification Methods 0.000 description 7
- 230000008023 solidification Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、YBCO系あるいはBi系などの酸化物超電
導体の製造方法に関し、特に、結晶の一方向凝固を可能
にした酸化物超電導体の製造方法に係わる。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a method for manufacturing oxide superconductors such as YBCO-based or Bi-based oxide superconductors, and particularly relates to a method for producing oxide superconductors that enable unidirectional solidification of crystals. It is related to the manufacturing method.
[従来の技術及び発明が解決しようとする課題]従来か
ら、酸化物超電導体は、その特性が結晶方位により大き
く異なり異方性があることが知られている。特に、結晶
の垂直方向(C軸)は水平面(a、b面)内に比べ電気
抵抗値が遥かに大きく、酸化物超電導体の特性はa、、
b面の構造が支配していると考えられる。[Prior Art and Problems to be Solved by the Invention] It has been known that oxide superconductors have properties that vary greatly depending on crystal orientation and are anisotropic. In particular, the electrical resistance value in the vertical direction (C axis) of the crystal is much larger than in the horizontal plane (a, b plane), and the characteristics of oxide superconductors are a,...
It is thought that the structure of the b-plane is dominant.
ところで、通常の合成方法では、特に焼結体(バルク)
の場合、その結晶方位がランダムとなるため、電気・磁
気特性共に実用的なレベルに達していない。By the way, in normal synthesis methods, especially sintered bodies (bulk)
In the case of , the crystal orientation is random, so both the electrical and magnetic properties have not reached a practical level.
結晶の配向性を上げる方法として、酸化物超電導体を溶
融し、温度勾配を持つ電気炉中で相対的に移動させて再
結晶させる方法がある。ここで結晶の配向性は温度勾配
が大きいほど一方向に揃うことが知られているが、電気
炉では熱伝導により均熱化され易く急峻な温度勾配を形
成することが不可能であり、配向性の制御は田作である
。One way to increase crystal orientation is to melt an oxide superconductor and recrystallize it by moving it relatively in an electric furnace with a temperature gradient. It is known that the larger the temperature gradient, the more aligned the crystal orientation is in one direction, but in an electric furnace, the temperature is easily equalized by heat conduction, making it impossible to form a steep temperature gradient. Controlling sexuality is a takumi.
また、酸化物超電導物質にレーザ光を照射して局部的に
加熱溶融し、それを移動(走査)させるこ)仝により走
査方向に温度勾配を形成して照射部分を順次結晶化させ
る試みが行なわれているが、この場合、照射部分はその
中心部が最も高温になるため、この中心部から放射状に
温度勾配ができ、レーザ光を一方向に走査するにも拘ら
ず、結晶の配向は一方向に揃わない。従って、配向性の
制御ができないという難点があった。In addition, an attempt has been made to irradiate an oxide superconducting material with laser light to locally heat and melt it, and then move it (scanning) to create a temperature gradient in the scanning direction and sequentially crystallize the irradiated areas. However, in this case, the temperature is highest at the center of the irradiated area, so a temperature gradient is created radially from this center, and even though the laser beam is scanned in one direction, the crystal orientation is not the same. Not aligned in the direction. Therefore, there was a problem that the orientation could not be controlled.
さらに、YBCO系の酸化物超電導体では一般に溶融再
結晶化せた場合、絶縁性の所謂211構遺体になってし
まい123構遺体ができないという難点があった。Furthermore, YBCO-based oxide superconductors generally have the disadvantage that when melted and recrystallized, they become insulating so-called 211-structure bodies, making it impossible to form 123-structure bodies.
また、レーザ光により溶融再結晶化した場合、凝固した
結晶は非常に酸素が欠損した状態となっているため後処
理として酸素アニールを行なう必要がある。ここで、試
料全体を均一に加熱する従来のアニール方法では配向性
をもって凝固した結晶であっても加熱する際に結晶の方
向が乱れ、結果として所望の特性の超電導体を得ること
ができない。Further, when the crystal is melted and recrystallized by laser light, the solidified crystal is extremely deficient in oxygen, so it is necessary to perform oxygen annealing as a post-treatment. Here, in the conventional annealing method in which the entire sample is heated uniformly, even if crystals are solidified with orientation, the direction of the crystals is disturbed during heating, and as a result, a superconductor with desired characteristics cannot be obtained.
[発明の目的]
本発明は上記従来の難点に鑑みなされたもので、結晶の
一方向の配向性凝固が可能となる酸化物超電導体の製造
方法を提供することを目的とする。[Object of the Invention] The present invention was made in view of the above-mentioned conventional difficulties, and it is an object of the present invention to provide a method for producing an oxide superconductor that enables unidirectional oriented solidification of crystals.
[課題を解決するための手段]
このような目的を達成するために本発明の酸化物超電導
体の製造方法によれば、酸化物超電導物質または溶融・
凝固によって酸化物超電導物質を生成する物質からなる
長尺材料にレーザ光を照射して再結晶化または結晶化す
るにあたり、前記再結晶化または結晶化された超電導物
質に直ちに強制冷却を施し、軸方向の温度勾配を増加さ
せるようにしたものである。[Means for Solving the Problems] In order to achieve such objects, according to the method for producing an oxide superconductor of the present invention, an oxide superconductor or a molten
When recrystallizing or crystallizing a long material made of a substance that generates an oxide superconducting material by solidification with a laser beam, the recrystallized or crystallized superconducting material is immediately forcedly cooled, and the axial It is designed to increase the temperature gradient in the direction.
この場合、再結晶化または結晶化後の酸化物超電導物質
を直ちに強制冷却することにより、軸方向の温度勾配を
それに垂直な方向の温度勾配に比較して著しく増大させ
ることができ、一方向凝固が達成できる。In this case, by immediately forced cooling of the oxide superconducting material after recrystallization or crystallization, the temperature gradient in the axial direction can be significantly increased compared to the temperature gradient in the direction perpendicular to it, resulting in unidirectional solidification. can be achieved.
また、以上の製造方法により結晶化した配向性を有する
酸化物超電導物質の結晶を酸素アニールするにあたり、
酸素雰囲気下で帯状パターンを結晶の配向方向と同方向
に走査して酸素アニールするものである。In addition, in oxygen annealing the crystal of the oriented oxide superconducting material crystallized by the above manufacturing method,
Oxygen annealing is performed by scanning a strip pattern in the same direction as the crystal orientation in an oxygen atmosphere.
[発明の実施例]
以下、本発明による酸化物超電導体の製造方法の一実°
施例を図面に従って詳述する。[Embodiments of the Invention] Hereinafter, an example of the method for producing an oxide superconductor according to the present invention will be described.
Examples will be described in detail according to the drawings.
第1図に示すように試料1は、長尺の基板2上に形成さ
れた薄膜であり、試料1に対し略直角にレーザ光3を照
射しながら矢印A方向に走査することにより、照射部分
1aが加熱・溶融され、レーザ光3の移動に伴い後方よ
り冷却され再結晶化する。As shown in FIG. 1, the sample 1 is a thin film formed on a long substrate 2, and by scanning in the direction of arrow A while irradiating the sample 1 with a laser beam 3 at approximately right angles, the irradiated area is 1a is heated and melted, and as the laser beam 3 moves, it is cooled from behind and recrystallized.
実際の操作においては、レーザ光3を固定し、基板2を
走査方向と逆の方向に移動せしめる。In actual operation, the laser beam 3 is fixed and the substrate 2 is moved in the opposite direction to the scanning direction.
ここで、試料1は酸化物超電導物質または溶融・凝固に
よって酸化物超電導物質を生成する物質の何れでもよく
、後者の溶融・凝固によって酸化物超電導物質を生成す
る物質は、例えばY、Ba。Here, the sample 1 may be either an oxide superconducting substance or a substance that generates an oxide superconducting substance by melting and solidification, and examples of the latter substance that generates an oxide superconducting substance by melting and solidifying include Y and Ba.
Cuの酸化物などの超電導材料を固相法によりペレット
化したもの、金属アルコキシドその他の有機・金属化合
物および無機化合物を利用した超電導体溶融のコーテイ
ング膜、ドクターブレード法により作成した原料粉体と
有機バインダー等からなる溶液のスラリーの厚膜等であ
る。Pelletized superconducting materials such as Cu oxides using the solid phase method, superconductor melt coating films using metal alkoxides and other organic/metallic compounds and inorganic compounds, and raw material powders and organic materials created using the doctor blade method. It is a thick film of a slurry of a solution consisting of a binder, etc.
また、酸化物超電導体原料の高温溶融液中に基板を浸漬
し、急冷することによって作成したアモルファスの厚膜
なども採用することができる。この場合、レーザ溶融後
の密度変化は小さく、クラック等が生じにくい。Furthermore, an amorphous thick film created by immersing a substrate in a high-temperature melt of an oxide superconductor raw material and rapidly cooling it can also be used. In this case, the change in density after laser melting is small and cracks are less likely to occur.
また酸化物超電導物質としては、上記物質を溶融後焼結
させたものの他、エキシマレーサニよるレーザスパッタ
法、CVD法、スプレーパイロリシス法などの方法で基
板2上に形成したもの等を用いることができる。Furthermore, as the oxide superconducting material, in addition to those obtained by melting and sintering the above-mentioned materials, those formed on the substrate 2 by a method such as laser sputtering using excimer laser, CVD, or spray pyrolysis may be used. I can do it.
また、基板2は板状体又はテープの何れでもよく、銀、
ジルコニウムなどの金属基板、金属基板上に酸化マグネ
シウム、イツトリウム安定化ジルコニウム(YSZ)、
チタン酸ストロンチウム等のバッファ層を設けたもの、
あるいは酸化マグネシウム、YSZ等の絶縁性基板の何
れも採用できる。但し、基板として金属基板を用いる場
合には、レーザ照射後、基板2を強制冷却し、基板表面
と試料1との反応を防止する必要がある。Further, the substrate 2 may be either a plate-like body or a tape, and may be made of silver,
Metal substrates such as zirconium, magnesium oxide on metal substrates, yttrium stabilized zirconium (YSZ),
Those with a buffer layer such as strontium titanate,
Alternatively, any insulating substrate such as magnesium oxide or YSZ may be used. However, when a metal substrate is used as the substrate, it is necessary to forcibly cool the substrate 2 after laser irradiation to prevent a reaction between the substrate surface and the sample 1.
レーザ光3は試料1の幅方向全体を溶融させるのに必要
な出力およびビーム径を有する通常の丸ビームが用いら
れる。As the laser beam 3, a normal round beam having the power and beam diameter necessary to melt the entire width of the sample 1 is used.
上記のレーザ光としては、試料の膜厚等により異なるが
、通常、例えばYAGレーザの場合、10W以上の出力
のものを使用する。また、レーザ光の走査速度はレーザ
ビーム出力、レーザビーム径により異なるが、上記レー
ザビーム出力のレーザでビーム半径50μmの場合、5
〜100m/sec程度とする。The above laser beam varies depending on the film thickness of the sample, etc., but normally, for example, in the case of a YAG laser, one with an output of 10 W or more is used. The scanning speed of the laser beam varies depending on the laser beam output and laser beam diameter, but in the case of a laser with the above laser beam output and a beam radius of 50 μm,
~100m/sec.
この場合、一般に酸化物の場合、熱伝導度が低く空冷だ
けでは軸方向に急峻な温度勾配をつけることが困難であ
るので、レーザビームの照射部分1aの直後に強制冷却
域4を設ける。In this case, since oxides generally have low thermal conductivity and it is difficult to create a steep temperature gradient in the axial direction by air cooling alone, a forced cooling zone 4 is provided immediately after the laser beam irradiation portion 1a.
強制冷却域を設ける手段としては、例えば液体ガリウム
、液体窒素、液体空気等の冷媒が用いられる。これら冷
媒を試料1および/または基板2の表面より、第2図に
示すようにノズル5等によって吹きつけるか、第3図に
示すようにこれらの液体を収容した冷却槽6に浸漬して
強制冷却を行なうこともできる。As means for providing the forced cooling region, for example, a refrigerant such as liquid gallium, liquid nitrogen, or liquid air is used. These coolants are sprayed onto the surface of the sample 1 and/or the substrate 2 using a nozzle 5, etc., as shown in FIG. Cooling can also be performed.
強°制冷却域4は第1図に示すようにレーザビームパタ
ーン1aの後方に近接してスポット状に設けることが好
ましい。レーザビームパターン1aとの間隔は走査速度
、レーザビーム出力、ビーム径、ビーム間隔等により適
宜選択される。The forced cooling region 4 is preferably provided in a spot shape close to the rear of the laser beam pattern 1a, as shown in FIG. The distance from the laser beam pattern 1a is appropriately selected depending on the scanning speed, laser beam output, beam diameter, beam interval, etc.
このように強制冷却域4を設け、レーザビームパターン
1aの中央部分から強制的に冷却することによりレーザ
走査方向の温度勾配を大きくし、結晶化を高めると共に
、任意に核生成し、凝固するのを防ぎ所望の配向性のあ
る結晶化を図ることができる。By providing the forced cooling zone 4 in this manner and forcibly cooling the laser beam pattern 1a from the center, the temperature gradient in the laser scanning direction is increased, crystallization is increased, and nucleation and solidification occur arbitrarily. It is possible to prevent this and achieve crystallization with desired orientation.
更に、狭い加熱領域で走査速度を上げることにより、方
向性のある温度勾配を維持することができ、この場合、
通常の溶融、再結晶の過程からは生成できない固相をも
安定に結晶化できる。例えば、YBCO系超電導体の場
合、通常の溶融211相の結晶化しかできないが、本発
明の方法によれば123相のものが安定に結晶化できる
。Furthermore, by increasing the scanning speed in a narrow heating region, a directional temperature gradient can be maintained;
It is possible to stably crystallize solid phases that cannot be generated through normal melting and recrystallization processes. For example, in the case of a YBCO-based superconductor, only a normal molten 211 phase can be crystallized, but according to the method of the present invention, a 123 phase can be stably crystallized.
尚、上述のレーザによる溶融は酸素圧コントロール下で
行なうことが好ましい。Note that the above-described laser melting is preferably performed under oxygen pressure control.
又、レーザによる急激な加熱に伴う材料成分の蒸発、発
泡を防ぐと共に、再結晶化に伴ってクラックが生じるの
を防ぐ目的でレーザ照射に先行してハロゲンランプ等の
予熱源により予め熱処理を行なうことが望ましい。In addition, heat treatment is performed in advance using a preheating source such as a halogen lamp prior to laser irradiation in order to prevent material components from evaporating and foaming due to rapid heating by laser, and to prevent cracks from occurring due to recrystallization. This is desirable.
次に、以上のようにして再結晶させた超電導物質の酸素
アニールについて説明する。レーザ溶融により再結晶さ
せたものは非常に酸素欠損した結晶になり易いので、後
処理として酸素アニールを必要とする。この場合、配向
性結晶の方向性を維持して酸素アニールしなければなら
ない。例えば、比較的低温下(YBCO系の場合、40
0℃x10 hrs程度)で高酸素圧雰囲気または酸素
気流中で熱処理を行なう。好ましくは、第4図(a)、
(b)に示すようにアニール用の熱源として、帯状パタ
ーン10のレーザを用いる。帯状のレーザはレーザ溶融
によって一方向凝固した結晶1°の配向方向Bに温度分
布Cを生じるようなエネルギー分布を有するものを用い
る。Next, oxygen annealing of the superconducting material recrystallized as described above will be explained. Since crystals recrystallized by laser melting tend to be extremely oxygen-deficient crystals, oxygen annealing is required as a post-treatment. In this case, oxygen annealing must be performed while maintaining the directionality of the oriented crystal. For example, at a relatively low temperature (for YBCO type, 40
The heat treatment is performed at a temperature of about 0° C. x 10 hrs in a high oxygen pressure atmosphere or an oxygen stream. Preferably, FIG. 4(a),
As shown in (b), a laser with a strip pattern 10 is used as a heat source for annealing. The belt-shaped laser used has an energy distribution that produces a temperature distribution C in the direction B of orientation of 1° of a crystal unidirectionally solidified by laser melting.
このため、帯状パターンレーザはその幅が結晶の幅より
も広いスリットレーザが用いられる。レーザ出力はレー
ザ溶融に用いたものよりも小さいものが用いられる。こ
れにより結晶の方向性を乱すことなく加熱、酸素吸収が
可能となる。For this reason, a slit laser whose width is wider than the width of the crystal is used as the band pattern laser. The laser power used is smaller than that used for laser melting. This allows heating and oxygen absorption without disturbing the orientation of the crystal.
このような帯状のレーザを所定酸素分圧下で結晶の配向
方向Bに複数回走査することにより結晶に酸素を吸収さ
せ酸素アニールを行なう。走査速度は溶融、再結晶時と
同様であるが制御酸素分圧下では多数回走査することが
必要で、例えば酸素分圧が0.2気圧の場合、500回
程度走査する。By scanning such a band-shaped laser multiple times in the crystal orientation direction B under a predetermined oxygen partial pressure, the crystal absorbs oxygen and performs oxygen annealing. The scanning speed is the same as that during melting and recrystallization, but under controlled oxygen partial pressure it is necessary to scan multiple times. For example, when the oxygen partial pressure is 0.2 atm, scanning is performed approximately 500 times.
このように結晶の配向方向に温度分布を持たせた帯状で
酸素を吸収させることにより、結晶の配向性は維持され
、高度に配向した酸化物超電導体を得ることができる。By absorbing oxygen in a belt shape with a temperature distribution in the crystal orientation direction, the crystal orientation is maintained and a highly oriented oxide superconductor can be obtained.
実施例1
厚さ1μ、幅80μmの長尺のYBCO系超電導物質の
薄膜の上面に、出力10W1ビーム半?蚤50μmφの
ビームを用いて走査速度5 cm/secで照射し、再
結晶化させ、更にレーザノくターン(こ対し150μm
の間隔で液体窒素吹き付けによる強制冷却域を設けた。Example 1 A beam with an output of 10W and a half beam was placed on the upper surface of a long thin film of YBCO superconducting material with a thickness of 1 μm and a width of 80 μm. It was irradiated with a beam with a diameter of 50 μm at a scanning speed of 5 cm/sec, recrystallized, and then laser-turned (with a diameter of 150 μm).
Forced cooling areas were established by spraying liquid nitrogen at intervals of .
この場合のa−b軸配向の制御性及び臨界電流密度Jc
値(OT、77K)の結果を表1に示す。Controllability of a-b axis orientation and critical current density Jc in this case
The results of the values (OT, 77K) are shown in Table 1.
尚、比較例としてシングルビームを用(1て強制冷却し
ない場合(比較例1)及び温度勾配30”C/cm炉で
溶融結晶化させた場合(比較例2)の結果を表1に示し
た。As a comparative example, Table 1 shows the results of using a single beam (without forced cooling (Comparative Example 1) and when melting and crystallizing in a furnace with a temperature gradient of 30"C/cm (Comparative Example 2). .
表1からも明らかなように、強制冷却域を設けることに
より、a−b軸の配向性、制御性とも(こ優れ又、高い
Jc値が得られる。As is clear from Table 1, by providing a forced cooling region, both the a-b axis orientation and controllability are excellent, and a high Jc value can be obtained.
表 1
実施例2
実施例1で得られた再結晶膜に酸素分圧02゜気圧下で
出力5W、 1mmx 100 μmの帯状レーザパタ
ーンを走査速度10 cm/ seeで500回走査し
、酸素アニールを行なった。一方、比較例3として同酸
素分圧下で400℃で均一アニールを行ない、配向性の
維持及び外部磁界0T(77K)のときの臨界電流密度
J c (A/cry?)を比較した。Table 1 Example 2 The recrystallized film obtained in Example 1 was subjected to oxygen annealing by scanning a 1 mm x 100 μm strip laser pattern 500 times with an output of 5 W and a scanning speed of 10 cm/see under an oxygen partial pressure of 02° atmospheric pressure. I did it. On the other hand, as Comparative Example 3, uniform annealing was performed at 400° C. under the same oxygen partial pressure, and maintenance of orientation and critical current density J c (A/cry?) at an external magnetic field of 0 T (77 K) were compared.
表 2
表2からも明らかなように、本発明のアニール方法によ
れば結晶の配向性を損うことなく酸素アニールでき、し
かも高いJc値を得ることが出来た。Table 2 As is clear from Table 2, according to the annealing method of the present invention, oxygen annealing could be performed without impairing crystal orientation, and high Jc values could be obtained.
[発明の効果]
以上の実施例からも明らかなように、本発明による酸化
物超電導体の製造方法によれば、長尺部材のレーザ照射
部に近接して強制冷却域を設けたことにより、試料上に
走査方向に揃った急峻な温度勾配を形成することができ
、結晶方向の制御が容易で高い一方向凝固が可能である
。[Effects of the Invention] As is clear from the above examples, according to the method for manufacturing an oxide superconductor according to the present invention, by providing a forced cooling region close to the laser irradiation part of the elongated member, It is possible to form a steep temperature gradient aligned in the scanning direction on the sample, and the crystal direction can be easily controlled and high unidirectional solidification is possible.
又、本発明の酸化物超電導体の製造方法によれば、この
ように一方向凝固した結晶を酸素アニールするにあたり
、帯状レーザを走査させることにより酸素アニールする
ようにしたので、酸素アニール後も結晶の配向性が維持
でき高度に一方向凝固した酸化物超電導体を得ることが
できる。In addition, according to the method for manufacturing an oxide superconductor of the present invention, oxygen annealing is performed by scanning a strip laser when unidirectionally solidified crystals are annealed with oxygen, so that the crystals remain intact even after oxygen annealing. It is possible to maintain the orientation of the oxide superconductor and obtain a highly unidirectionally solidified oxide superconductor.
第1図は本発明による酸化物超電導体の製造方法におけ
るレーザ溶融の状態を示す斜視図、第2図および第3図
はそれぞれ強制冷却法を示す概略断面図、第4図(a)
、(b)はそれぞれ本発明の酸化物超電導体の製造方法
における酸素アニルを示す平面図及び温度分布を示す図
である。
1・・・酸化物超電導物質(試料)
1a・・・照射部分
2・・・基板
3・・・レーザ光
1°・・・配向性を有する結晶
4・・・強制冷却域
帯状パターン
B・・・配向方向
・・走査方向FIG. 1 is a perspective view showing the state of laser melting in the method for producing an oxide superconductor according to the present invention, FIGS. 2 and 3 are schematic cross-sectional views showing the forced cooling method, and FIG. 4(a)
, (b) are a plan view showing oxygen annealing and a diagram showing temperature distribution in the method for producing an oxide superconductor of the present invention, respectively. 1... Oxide superconducting material (sample) 1a... Irradiated portion 2... Substrate 3... Laser beam 1°... Oriented crystal 4... Forced cooling zone band pattern B...・Orientation direction...Scanning direction
Claims (2)
超電導物質を生成する物質からなる長尺材料にレーザ光
を連続的に照射して再結晶化または結晶化するにあたり
、前記再結晶化または結晶化された超電導物質に直ちに
強制冷却を施し、軸方向の温度勾配を増加させたことを
特徴とする酸化物超電導体の製造方法。1. In recrystallizing or crystallizing a long material made of an oxide superconducting substance or a substance that generates an oxide superconducting substance by melting and solidifying the material, the recrystallized or crystallized material is continuously irradiated with laser light. 1. A method for producing an oxide superconductor, characterized in that the superconducting material is immediately forcedly cooled to increase the temperature gradient in the axial direction.
冷却後酸素雰囲気下でレーザ光の走査方向と垂直方向に
平行な帯状パターンを有するレーザ光の反復照射により
、酸素アニールすることを特徴とする請求項1記載の酸
化物超電導体の製造方法。2. Recrystallized or crystallized oxide superconducting materials are
2. The method for manufacturing an oxide superconductor according to claim 1, wherein oxygen annealing is performed in an oxygen atmosphere after cooling by repeated irradiation with a laser beam having a strip pattern parallel to a direction perpendicular to the scanning direction of the laser beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1082147A JPH02258669A (en) | 1989-03-31 | 1989-03-31 | Production of oxide superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1082147A JPH02258669A (en) | 1989-03-31 | 1989-03-31 | Production of oxide superconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02258669A true JPH02258669A (en) | 1990-10-19 |
Family
ID=13766324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1082147A Pending JPH02258669A (en) | 1989-03-31 | 1989-03-31 | Production of oxide superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02258669A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100147807A1 (en) * | 2008-12-15 | 2010-06-17 | Samsung Electronics Co., Ltd. | Electron beam annealing apparatuses and annealing methods using the same |
-
1989
- 1989-03-31 JP JP1082147A patent/JPH02258669A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100147807A1 (en) * | 2008-12-15 | 2010-06-17 | Samsung Electronics Co., Ltd. | Electron beam annealing apparatuses and annealing methods using the same |
| US8445366B2 (en) * | 2008-12-15 | 2013-05-21 | Samsung Electronics Co., Ltd. | Electron beam annealing apparatus and annealing methods using the same |
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