JPH02258695A - Production of oxide superconductor - Google Patents
Production of oxide superconductorInfo
- Publication number
- JPH02258695A JPH02258695A JP8215089A JP8215089A JPH02258695A JP H02258695 A JPH02258695 A JP H02258695A JP 8215089 A JP8215089 A JP 8215089A JP 8215089 A JP8215089 A JP 8215089A JP H02258695 A JPH02258695 A JP H02258695A
- Authority
- JP
- Japan
- Prior art keywords
- film
- base
- melting
- laser
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000002844 melting Methods 0.000 claims abstract description 20
- 230000008018 melting Effects 0.000 claims abstract description 18
- 230000001681 protective effect Effects 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 8
- 238000005245 sintering Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 26
- 239000013078 crystal Substances 0.000 abstract description 32
- 239000010408 film Substances 0.000 abstract description 20
- 238000001704 evaporation Methods 0.000 abstract description 7
- 230000008020 evaporation Effects 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 5
- 238000001816 cooling Methods 0.000 abstract description 3
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 abstract description 3
- 239000012780 transparent material Substances 0.000 abstract description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 abstract description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 229910052726 zirconium Inorganic materials 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 238000000137 annealing Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 oxygen ion Chemical class 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Superconductors And Manufacturing Methods Therefor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、YBCO系あるいはBi系などの酸化物超電
導体の製造方法に関し、特に、結晶の一方向凝固を可能
にした酸化物超電導体の製造方法に係わる。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a method for manufacturing oxide superconductors such as YBCO-based or Bi-based oxide superconductors, and particularly relates to a method for producing oxide superconductors that enable unidirectional solidification of crystals. It is related to the manufacturing method.
[従来の技術及び発明が解決しようとする課題]従来か
ら、酸化物超電導体は、その特性が結晶方位により大き
く異なり異方性があることが知られている。特に、結晶
の垂直方向(C軸)は水平面(Jl、b面)内に比べ電
気抵抗値が遥かに大きく、酸化物超電導体の特性はa、
b面の構造が支配していると考えられる。[Prior Art and Problems to be Solved by the Invention] It has been known that oxide superconductors have properties that vary greatly depending on crystal orientation and are anisotropic. In particular, the electrical resistance value in the vertical direction (C axis) of the crystal is much larger than in the horizontal plane (Jl, b plane), and the characteristics of oxide superconductors are a,
It is thought that the structure of the b-plane is dominant.
ところで、通常の合成方法では、特に焼結体(バルク)
の場合、その結晶方位がランダムとなるため、電気・磁
気特性共に実用的なレベルに達していない。By the way, in normal synthesis methods, especially sintered bodies (bulk)
In the case of , the crystal orientation is random, so both the electrical and magnetic properties have not reached a practical level.
結晶の配向性を上げる方法として、酸化物超電導体を溶
融し、温度勾配を有する電気炉中で相対的に移動させて
再結晶させる方法がある。ここで結晶の配向性は温度勾
配が大きいほど一方向に揃うことが知られているが、電
気炉では熱伝導により均熱化され易く急峻な温度勾配を
形成することが不可能であり、配向性の制御は困難であ
る。As a method of increasing crystal orientation, there is a method of melting an oxide superconductor and recrystallizing it by moving it relatively in an electric furnace having a temperature gradient. It is known that the larger the temperature gradient, the more aligned the crystal orientation is in one direction, but in an electric furnace, the temperature is easily equalized by heat conduction, making it impossible to form a steep temperature gradient. Controlling sexuality is difficult.
また、酸化物超電導物質にレーザ光を照射して局部的に
加熱溶融し、それを移動(走査)させることにより走査
方向に温度勾配を形成して照射部分を順次結晶化させる
試みが行なわれている。特にレーザ光として特定の光強
度パターンを有するものを用いた場合には走査方向に配
向した結晶が得られている。In addition, attempts have been made to irradiate oxide superconducting materials with laser light to locally heat and melt it, and then move (scan) it to form a temperature gradient in the scanning direction and sequentially crystallize the irradiated areas. There is. In particular, when a laser beam having a specific light intensity pattern is used, crystals oriented in the scanning direction are obtained.
しかしながら、一般に酸化物超電導物質及びその原料と
なる物質は熱伝導率が低く、レーザ光が照射される面の
近傍だけが加熱され、レーザ光が照射される方向(厚さ
方向)に大きな温度勾配を生じる。このため、被照射面
近傍に配向性結晶が得られてもその厚さが薄いため、所
望の特性を得ることが困難である。又、厚さ方向の温度
勾配のため厚さ方向に不均一な結晶ができるだけでなく
、表面近傍において、レーザ光の走査方向に結晶が配向
する妨げとなる場合がある。更に、レーザ光を照射した
表面側が非常な高温となるのでBi系の超電導物質の場
合には、pbを中心に組成材料が蒸発するという問題点
がある。However, oxide superconducting materials and their raw materials generally have low thermal conductivity, and only the area near the surface irradiated with laser light is heated, with a large temperature gradient in the direction of laser light irradiation (thickness direction). occurs. Therefore, even if oriented crystals are obtained in the vicinity of the irradiated surface, the thickness thereof is so thin that it is difficult to obtain desired characteristics. Furthermore, the temperature gradient in the thickness direction not only creates non-uniform crystals in the thickness direction, but also may impede orientation of the crystals in the scanning direction of the laser beam in the vicinity of the surface. Furthermore, since the surface side irradiated with laser light becomes extremely high temperature, in the case of a Bi-based superconducting material, there is a problem that the constituent materials, mainly PB, evaporate.
[発明の目的]
本発明は上記従来の難点に鑑みなされたもので、結晶の
一方向の配向性凝固が可能であり、特に結晶相の厚さ方
向の均一性が高められた酸化物超電導体の製造方法を提
供することを目的とする。[Object of the Invention] The present invention has been made in view of the above-mentioned conventional difficulties, and provides an oxide superconductor in which unidirectional crystal orientation solidification is possible, and in particular the uniformity of the crystal phase in the thickness direction is improved. The purpose is to provide a manufacturing method for.
[課題を解決するための手段]
このような目的を達成するために本発明の酸化物超電導
体の製造方法によれば、酸化物超電導物質または溶融・
焼結によって酸化物超電導物質を生成する物質にレーザ
光を照射し、前記酸化物超電導物質または前記物質を溶
融後冷却して結晶化するにあたり、基板としてレーザ光
に対して透光性を有する基板を用いると共に、基板及び
試料の両面からレーザ光を照射するものである。[Means for Solving the Problems] In order to achieve such objects, according to the method for producing an oxide superconductor of the present invention, an oxide superconductor or a molten
A substrate that is transparent to laser light as a substrate in irradiating a substance that generates an oxide superconducting substance by sintering with a laser beam, melting the oxide superconducting substance or the substance, and then cooling and crystallizing the substance. In this method, laser light is irradiated from both sides of the substrate and sample.
更に本発明の酸化物超電導体の製造方法によれば、基板
として透明基板を用いると共に試料の基板と対向する面
と反対の面に高融点で、かつレーザ光に対して透光性保
護膜を設け、基板及び試料の両面からレーザを照射する
ものである。Furthermore, according to the method for producing an oxide superconductor of the present invention, a transparent substrate is used as the substrate, and a protective film having a high melting point and transparent to laser light is provided on the surface opposite to the surface of the sample facing the substrate. The laser beam is irradiated from both sides of the substrate and sample.
[発明の実施例]
以下、本発明による酸化物超電導体の製造方法の一実施
例を図面に従って詳述する。[Embodiments of the Invention] Hereinafter, an embodiment of the method for producing an oxide superconductor according to the present invention will be described in detail with reference to the drawings.
第1図に示すように試料1は、長尺の基板2上に形成さ
れた薄膜であり、試料1の両側からレーザ光3を照射し
ながら矢印A方向に走査することにより、照射部分1a
が加熱・溶融され、レーザ光3の移動に伴い後方より冷
却され再結晶化する。As shown in FIG. 1, the sample 1 is a thin film formed on a long substrate 2, and by scanning in the direction of arrow A while irradiating the sample 1 with laser light 3 from both sides, the irradiated area 1a
is heated and melted, and as the laser beam 3 moves, it is cooled from behind and recrystallized.
ここで、試料1は酸化物超電導物質または溶融・焼結に
よって酸化物超電導物質を生成する物質の何れでもよく
、後者の溶融・焼結によって酸化物超電導物質を生成す
る物質は、例えばYSBa。Here, the sample 1 may be either an oxide superconducting material or a material that produces an oxide superconducting material by melting and sintering, and the latter material that produces an oxide superconducting material by melting and sintering is, for example, YSBa.
Cuの酸化物などの超電導材料を固相法によりベレット
化したもの、金属アルコキシドその他の有機・金属化合
物および無機化合物を利用した超電導体溶融のコーテイ
ング膜、ドクターブレード法により作成した原料粉体と
有機バインダー等からなる溶液のスラリーの厚膜等であ
る。Superconducting materials such as Cu oxides made into pellets using the solid phase method, superconductor melt coating films using metal alkoxides and other organic/metallic compounds, and inorganic compounds, and raw material powders and organic materials created using the doctor blade method. It is a thick film of a slurry of a solution consisting of a binder, etc.
また、酸化物超電導体原料の高温溶融液中に基板を浸漬
し、急冷することによって作成したアモルファスの厚膜
なとも採用することができる。この場合、レーザ溶融後
の密度変化は小さく、クラック等が生じにくい。It is also possible to employ an amorphous thick film created by immersing the substrate in a high-temperature melt of the oxide superconductor raw material and rapidly cooling it. In this case, the change in density after laser melting is small and cracks are less likely to occur.
また酸化物超電導物質としては、上記物質を溶融後焼結
させたものの他、エキシマレーザによるレーザスパッタ
法、CVD法、スプレーパイロリシス法などの方法で基
板2上に形成したもの等を用いることができる。Furthermore, as the oxide superconducting material, in addition to those obtained by melting and sintering the above-mentioned materials, those formed on the substrate 2 by a method such as a laser sputtering method using an excimer laser, a CVD method, or a spray pyrolysis method can be used. can.
また、基板2は高融点で光学的に透明な材料がら成る。Further, the substrate 2 is made of an optically transparent material with a high melting point.
このような基板用材料として、酸化チタン、チタン酸ス
トロンチウム、アルミナ、マグネシア、シリコン、酸化
ジルコニウム、イツトリウム安定化ジルコニウム(YS
Z)等が挙げられる。Materials for such substrates include titanium oxide, strontium titanate, alumina, magnesia, silicon, zirconium oxide, and yttrium-stabilized zirconium (YS
Z) etc.
特に、酸化ジルコニウム及びYSZは電圧をがけると酸
素イオン伝導度が大きくなるので、後述の酸化アニール
の際に酸素の出入り′を制御しゃすく好適である。In particular, zirconium oxide and YSZ have high oxygen ion conductivity when a voltage is applied, so they are suitable for controlling oxygen inflow and outflow during oxidation annealing, which will be described later.
レーザ光3は同一パターンのレーザ光を試料1と基板2
の両側から照射する。レーザ光のパターンは通常の丸ビ
ームでもよいがその走査方向に配向した結晶を得るため
には第2図に示すようなパターンを有するツインビーム
3a1 トリプルビーム3bあるいはスリットビーム3
cを用いる。このような特定のパターンを有するレーザ
光を用いた場合には、加熱領域が移動するに従って走査
方向と同方向の急峻な温度勾配を形成することができ、
結晶化はこの温度勾配に沿って進行するので高度に配向
した結晶が形成される。Laser light 3 uses the same pattern of laser light to target sample 1 and substrate 2.
irradiate from both sides. The laser beam pattern may be a normal round beam, but in order to obtain crystals oriented in the scanning direction, a twin beam 3a1, triple beam 3b or slit beam 3 having a pattern as shown in Fig. 2 is used.
Use c. When using a laser beam having such a specific pattern, it is possible to form a steep temperature gradient in the same direction as the scanning direction as the heated region moves.
Since crystallization proceeds along this temperature gradient, highly oriented crystals are formed.
しかも、このようなパターンのレーザ光を試料1の両面
から照射しているので試料1の厚さ方向に対して均一な
温度勾配が得られ、その結果、厚さ方向に対して均一な
結晶ができ、しかもどの厚さ方向でもレーザの移動方向
に配向した結晶が得られる。Moreover, since the laser beam with this pattern is irradiated from both sides of the sample 1, a uniform temperature gradient can be obtained in the thickness direction of the sample 1, and as a result, uniform crystals can be formed in the thickness direction. Furthermore, crystals oriented in the direction of laser movement can be obtained in any thickness direction.
このようなレーザ光の出力は、試料の熱伝導度、膜厚等
により異なるが、通常、例えばYAGレーザの場合、数
W〜数士W程度の出力のものを使用する。また、レーザ
光の走査速度はレーザビーム出力、レーザビーム径によ
り異なるが、上記レーザビーム出力のレーザでビーム半
径50μm1ビーム焦点間間隔100μmのツインビー
ムの場合、10 cm/sec程度とする。The output of such a laser beam varies depending on the thermal conductivity of the sample, film thickness, etc., but normally, for example, in the case of a YAG laser, an output of several watts to several watts is used. The scanning speed of the laser beam varies depending on the laser beam output and the laser beam diameter, but in the case of twin beams with a beam radius of 50 μm and a beam focus spacing of 100 μm using a laser with the above laser beam output, it is approximately 10 cm/sec.
尚、上述のレーザによる溶融は酸素圧コントロール下で
行なうことが好ましい。Note that the above-described laser melting is preferably performed under oxygen pressure control.
又、レーザによる急激な加熱に伴う材料成分の蒸発、発
泡を防ぐと共に、再結晶化に伴ってクラックが生じるの
を防ぐ目的でレーザ照射に先行してハロゲンランプ等の
予熱源により予め熱処理を行なうことが好ましい。In addition, heat treatment is performed using a preheating source such as a halogen lamp prior to laser irradiation in order to prevent material components from evaporating and foaming due to rapid heating by laser, and to prevent cracks from occurring due to recrystallization. It is preferable.
第3図は本発明の酸化物超電導体の製造方法の第2の実
施例を示すものであり、第1の実施例における試料1の
、基板2とは反対の面に透明な保護膜2°を設けたもの
である。FIG. 3 shows a second embodiment of the method for manufacturing an oxide superconductor of the present invention, in which a transparent protective film 2° is placed on the surface of the sample 1 opposite to the substrate 2 in the first embodiment. It has been established.
この保護膜2′は基板2と同様、高融点で光学的に透明
な試料からなり、基板2に用いられる酸化物と同じもの
を用いることができる。保護膜2′の厚さは通常、基板
2と同程度か、それ以下とする。Like the substrate 2, this protective film 2' is made of an optically transparent sample with a high melting point, and the same oxide as used for the substrate 2 can be used. The thickness of the protective film 2' is usually equal to or less than that of the substrate 2.
このような保護膜はCVD法、あるいはゾル−ゲル法な
どの低温処理によって設けることができるが上記材料の
単結晶基板を試料1に積層してもよい。Such a protective film can be provided by a low-temperature process such as a CVD method or a sol-gel method, but a single crystal substrate of the above-mentioned material may be laminated on the sample 1.
レーザ光3はこのような保護膜2゛ と基板2とを介し
て試料1の両側から照射される。この場合、第1の実施
例で述べたように試料1の厚さ方向に対して均一な温度
勾配が得られると共に、レーザにより加熱された表面か
らの試料の蒸発を防ぐことができる。The laser beam 3 is irradiated from both sides of the sample 1 via the protective film 2' and the substrate 2. In this case, as described in the first embodiment, a uniform temperature gradient can be obtained in the thickness direction of the sample 1, and evaporation of the sample from the surface heated by the laser can be prevented.
次に、以上のようにして配向性をもって再結晶させた超
電導物質の酸素アニールについて説明する。レーザ溶融
により再結晶させたものは非常に″酸素欠損した結晶に
なりやすいので、後処理として酸素アニールを必要とす
る。この場合、結晶の方向性を維持して酸素アニールし
なければならない。例えば、比較的低温下(Y B C
O系の場合、400℃xlohrs)で高酸素圧雰囲気
または酸素気流中で熱処理を行なう。好ましくは、第4
図((a )、(b ))に示すようにアニール用の熱
源として、帯状パターン31のレーザを用いる。帯状パ
ターン31のレーザはレーザ溶融によって一方向凝固し
た結晶20の配向方向Bに温度分布Cを生じるようなエ
ネルギー分布を有するものを用いる。Next, oxygen annealing of the superconducting material recrystallized with orientation as described above will be explained. Since crystals recrystallized by laser melting are very likely to become oxygen-deficient crystals, oxygen annealing is required as a post-treatment. In this case, oxygen annealing must be performed while maintaining the orientation of the crystal. For example: , at relatively low temperatures (Y B C
In the case of O-based materials, heat treatment is performed at 400° C. x lohrs) in a high oxygen pressure atmosphere or in an oxygen stream. Preferably, the fourth
As shown in the figures ((a) and (b)), a laser with a strip pattern 31 is used as a heat source for annealing. The laser for the strip pattern 31 is one having an energy distribution that produces a temperature distribution C in the orientation direction B of the crystal 20 unidirectionally solidified by laser melting.
このため、帯状レーザはその幅が結晶の幅よりも広いス
リットレーザが用いられる。レーザ出力はレーザ溶融に
用いたものよりも小さいものが用いられる。これにより
結晶の方向性を乱すことなく加熱、酸素吸収が可能とな
る。For this reason, a slit laser whose width is wider than the width of the crystal is used as the band laser. The laser power used is smaller than that used for laser melting. This allows heating and oxygen absorption without disturbing the orientation of the crystal.
このような帯状のレーザを所定酸素分圧下で結晶の配向
方向に複数回走査することにより結晶に酸素を吸収させ
酸素アニールを行なう。走査速度は溶融、焼結時と同様
であるが制御酸素分圧下では多数回走査することが必要
で、例えば酸素分圧が0.2気圧の場合、500回程変
電査する。Oxygen annealing is performed by scanning such a band-shaped laser multiple times in the orientation direction of the crystal under a predetermined oxygen partial pressure to cause the crystal to absorb oxygen. The scanning speed is the same as that for melting and sintering, but under controlled oxygen partial pressure, it is necessary to scan multiple times. For example, when the oxygen partial pressure is 0.2 atm, the voltage is changed about 500 times.
このように結晶の配向方向に温度分布を持たせた帯状で
酸素を吸収させることにより、結晶の配向は維持され、
高度に配向した酸化物超電導体を得ることができる。By absorbing oxygen in a band shape with temperature distribution in the crystal orientation direction, the crystal orientation is maintained.
A highly oriented oxide superconductor can be obtained.
実施例1
厚さ0.!5mmのチタン酸ストロンチウム基板上に、
厚さ1μ、幅200μのYBCO系超電導物質の薄膜を
形成し、このような試料の両側から出力5W、ビーム半
径50μm1ビーム焦点間間隔100μmのツインビー
ムを用い、走査速度10am/secで照射し、再結晶
化させた。Example 1 Thickness 0. ! On a 5mm strontium titanate substrate,
A thin film of YBCO-based superconducting material with a thickness of 1 μm and a width of 200 μm was formed, and such a sample was irradiated from both sides with twin beams with an output of 5 W, a beam radius of 50 μm, and a distance between beam focal points of 100 μm at a scanning speed of 10 am/sec. Recrystallized.
再結晶比相のa−b軸の配向性、配向制御の可能性及び
臨界電流密度J c (A/cr+f)を同様のレーザ
光を片側から走査し、結晶化させた場合(比較例1)と
比較した。結果を表1に示す。Orientation of the a-b axis of the recrystallization ratio phase, possibility of orientation control, and critical current density J c (A/cr + f) when scanning the same laser beam from one side and crystallizing (Comparative Example 1) compared with. The results are shown in Table 1.
表 1
(再結晶化)
*外部臨界OT、77K (以下同じ)表1からも明ら
かなように、両側からレーザを走査することにより、a
−b軸の配向性、コントロール性ともに優れ又、高いJ
c値が得られた。Table 1 (Recrystallization) *External critical OT, 77K (same below) As is clear from Table 1, by scanning the laser from both sides, a
- Excellent b-axis orientation and controllability, and high J
The c value was obtained.
実施例2
厚さ0.5mmのチタン酸ストロンチウム基板上に、厚
さ1μ、幅200μのBi系超超電導物質薄膜を形成し
、この上に上記基板と同じ基板を密着させた。このよう
な試料の両側から出力5W。Example 2 A Bi-based superconducting material thin film having a thickness of 1 μm and a width of 200 μm was formed on a strontium titanate substrate having a thickness of 0.5 mm, and the same substrate as the above substrate was closely adhered thereon. Output 5W from both sides of such a sample.
ビーム半径50μm1ビーム焦点間間隔100μmのツ
インビームを用い、走査速度I Q cm/secで照
射し、再結晶化させた。Recrystallization was carried out by irradiation using twin beams with a beam radius of 50 μm and a beam spacing of 100 μm at a scanning speed of I Q cm/sec.
この時の材料の蒸発及び臨界電流密度Jc(A/ c
tri )を同試料で上側の基板を設けず上側だけから
レーザ走査した場合(比較例2)と比較した。At this time, material evaporation and critical current density Jc (A/c
tri) was compared with the same sample in which no upper substrate was provided and laser scanning was performed only from the upper side (Comparative Example 2).
その結果Jcの値は前者では10 ” 〜10 ’A
/cm’であるのに対し、後者では10〜10 ’A
/cm’であった。As a result, the value of Jc is 10'' to 10'A in the former case.
/cm', whereas in the latter it is 10-10'A
/cm'.
また、比較例2では材料の蒸発が見られるのに対し、実
施例2では蒸発は全くなく配向性のよい超電導体を得る
ことができた。Further, in Comparative Example 2, evaporation of the material was observed, whereas in Example 2, there was no evaporation at all, and a superconductor with good orientation could be obtained.
[発明の効果]
以上の実施例からも明らかなように、本発明による酸化
物超電導体の製造方法によれば、試料を溶融するレーザ
光を試料の両側から照射し、高速で走査するようにした
ので試料の厚さ方向に均一で且つ結晶方向が走査方向に
揃った結晶を得ることかできる。[Effects of the Invention] As is clear from the above examples, according to the method for producing an oxide superconductor according to the present invention, the laser beam that melts the sample is irradiated from both sides of the sample and scanned at high speed. Therefore, it is possible to obtain a crystal that is uniform in the thickness direction of the sample and whose crystal direction is aligned in the scanning direction.
又、試料の上面に透明な保護膜を設けたのでBi系超超
電導物質場合、材料の蒸発を防ぐことが出来る。Furthermore, since a transparent protective film is provided on the upper surface of the sample, evaporation of the material can be prevented in the case of a Bi-based superconducting material.
又、基板及び保護膜となる酸化物の結晶面を適切にする
ことにより形成される超電導体の配向性制御を有効に行
なうことができる。In addition, the orientation of the superconductor formed can be effectively controlled by optimizing the crystal planes of the oxides serving as the substrate and the protective film.
第1図は本発明による酸化物超電導体の製造方法の第1
の実施例を示す平面図、第2図は特定のパターンを有す
るレーザ光を示す図、第3図は本発明による酸化物超電
導体の製造方法の第2の実施例を示す平面図、第4図(
a)及び(b)はそれぞれ本発明の酸化物超電導体の製
造方法における酸素アニールを示す図である。
1・・・試料の膜(酸化物超電導物質)2・・・基板
2゛・・・保護膜
3・・・レーザ光FIG. 1 shows the first method of manufacturing an oxide superconductor according to the present invention.
FIG. 2 is a plan view showing a laser beam having a specific pattern, FIG. 3 is a plan view showing a second example of the method for producing an oxide superconductor according to the present invention, and FIG. figure(
1A and 2B are diagrams each showing oxygen annealing in the method for producing an oxide superconductor of the present invention. 1... Sample film (oxide superconducting material) 2... Substrate 2''... Protective film 3... Laser light
Claims (1)
焼結によって酸化物超電導物質を生成する物質からなる
試料の膜にレーザ光を照射し、前記試料を溶融後冷却し
て結晶化するにあたり、前記基板としてレーザ光に対し
て透光性を有する基板を用いると共に、前記基板及び前
記試料の両面からレーザ光を照射することを特徴とする
酸化物超電導体の製造方法。 2、前記試料の前記基板と対向する面と反対の面に高融
点で、かつレーザ光に対して透光性を有する保護膜を設
けたことを特徴とする請求項1記載の酸化物超電導体の
製造方法。[Claims] 1. Oxide superconducting material formed on a substrate or melting
When a sample film made of a substance that generates an oxide superconducting material by sintering is irradiated with a laser beam, and the sample is melted and then cooled and crystallized, the substrate is a substrate that is transparent to the laser beam. A method for manufacturing an oxide superconductor, characterized in that the substrate and the sample are irradiated with laser light from both sides. 2. The oxide superconductor according to claim 1, further comprising a protective film having a high melting point and being transparent to laser light on a surface of the sample opposite to the surface facing the substrate. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8215089A JPH02258695A (en) | 1989-03-31 | 1989-03-31 | Production of oxide superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8215089A JPH02258695A (en) | 1989-03-31 | 1989-03-31 | Production of oxide superconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02258695A true JPH02258695A (en) | 1990-10-19 |
Family
ID=13766411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8215089A Pending JPH02258695A (en) | 1989-03-31 | 1989-03-31 | Production of oxide superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02258695A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8716189B2 (en) * | 2007-02-08 | 2014-05-06 | National Institute Of Advanced Industrial Science And Technology | Method of producing superconductive oxide material |
-
1989
- 1989-03-31 JP JP8215089A patent/JPH02258695A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8716189B2 (en) * | 2007-02-08 | 2014-05-06 | National Institute Of Advanced Industrial Science And Technology | Method of producing superconductive oxide material |
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