JPH02268007A - High frequency circuit device - Google Patents

Abstract

PURPOSE:To easily constitute a high frequency circuit, to facilitate shielding or the like and to miniaturize the device by supporting 1st and 2nd semiconductor devices respectively to a waveguide of the semiconductor device in use. CONSTITUTION:A high frequency circuit device consists of 1st and 2nd semiconductor devices 1, 2, and a waveguide 4 formed incorporatedly with a coaxial waveguide converter 41 and a waveguide flange 42. The coaxial waveguide converter 41 is formed respectively to both ends of the waveguide 4 in the axial direction and a flange 42 having a face orthogonal in the axial direction at both ends is formed. Then the semiconductor device 1 is arranged to the upper part on the face of the waveguide 4 inserted in the converter 41 in the axial direction and the 2nd semiconductor device 2 is arranged to the lower part relatively in parallel respectively and fixed to the waveguide 4 by using a bolt 6 or the like. In this case, the flange 42 acts like an outer wall of the entire high frequency circuit device, a high frequency input and output terminal 11 of the semiconductor device 1 is projected in the waveguide 4 to form part of the converter 41 and a power terminal 12 connects to the 2nd semiconductor device 2.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a high frequency circuit device that is composed of a semiconductor device and a waveguide and is used in a high frequency band such as a microwave band.

[Conventional technology]

Conventionally, this type of high-frequency circuit device is equipped with a semiconductor element or a circuit component including a semiconductor element, as shown in FIG.
A semiconductor device 1 having a high frequency input/output terminal 11 and a power supply terminal 12 is arranged in a waveguide 4 prepared individually according to the shape of the semiconductor device, and a coaxial waveguide converter 41 is provided in the waveguide 4. The high frequency input/output terminal 11 of the semiconductor device 1 is coupled to the high frequency input/output terminal 11 of the semiconductor device 1. Further, a power circuit board 7 is connected to the power terminal 12 of the semiconductor device 1 separately from the waveguide 4 to supply power.

[Problem to be solved by the invention]

In the conventional high frequency circuit device described above, it is necessary to connect the waveguide 4 to the semiconductor device 1 on one side and the power supply circuit board 7 for power supply on the other side.
2 requires work such as wiring using lead wires and connecting a socket that matches the shape of the semiconductor device.

For this reason, conventional high-frequency circuit devices have problems in that the work for configuring the circuit device is complicated, the entire circuit device becomes large, and it is difficult to reduce the size of the circuit device.

Furthermore, in the case of shielding the entire semiconductor device or high-frequency circuit device, it is necessary to provide a separate shield casing, which makes the configuration complicated and troublesome, and furthermore, it is difficult to miniaturize.

An object of the present invention is to provide a high frequency circuit device that can be easily constructed and compactly constructed.

[Means to solve the problem]

The high frequency circuit device of the present invention includes a waveguide in which a coaxial waveguide converter and a waveguide flange are integrally provided, and a surface of the waveguide at a location axially sandwiched between the waveguide flange. The waveguide includes a supported first semiconductor device, and a second semiconductor device disposed parallel to the first semiconductor device and supported on the opposite surface of the waveguide. The high frequency input/output terminal of the first semiconductor device is coupled to the coaxial waveguide converter, and the power supply terminal of the first semiconductor device is connected to the second semiconductor device.

[Effect]

In this configuration, by supporting the first semiconductor device and the second semiconductor device respectively on the waveguide of the semiconductor device used,
A high frequency circuit device can be easily constructed. Furthermore, the waveguide flange can be used as the outer wall of the device, making it easy to perform shielding and the like, and making it possible to downsize the device.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIG. 1 shows a first embodiment of the present invention, and FIG.
is a plan view, (b) is a vertical sectional view in the front direction, and (c) is a plan view.
) is a bottom view, (d) is a vertical cross-sectional view in the side direction, and (
e) is a side view. As shown in these figures, the high frequency circuit device of this embodiment includes a first semiconductor device 1 and a second semiconductor device 1.
The waveguide 4 includes a semiconductor device 2, a coaxial waveguide converter 4I, and a waveguide flange 42 integrally formed.

That is, the waveguide 4 has coaxial waveguide converters 41 formed at both ends in the axial direction, and waveguide flanges 42 having surfaces perpendicular to the axial direction are formed at both ends. and,
On the surface of the waveguide 4 that is sandwiched in the axial direction by these waveguide flanges 42, a first semiconductor device l is placed on the upper side with the coaxial waveguide converter 41 in between, and a second semiconductor device 2 is placed on the bottom side of the waveguide 4. are arranged parallel to each other and fixed to the waveguide 4 with bolts 6 or the like. In this case, the waveguide flange 42 functions as an outer wall of the entire high frequency circuit device.

A first semiconductor device 1 connects a high frequency input/output terminal 11 to a waveguide 4.
protruding inward and forming a part of the coaxial waveguide converter 41,
The power terminal 12 passes outside the coaxial waveguide converter 41 and is connected to the second semiconductor device 2 .

Further, the second semiconductor device 2 is connected to the outside of the semiconductor device via a feedthrough capacitor 5 that penetrates the side wall portion of the waveguide 4 .

When this semiconductor device is used as a 20 GH band amplifier, a microwave integrated circuit is used as the first semiconductor device 1 and a power supply circuit board is used as the second semiconductor device 2. In addition, the waveguide 4
The coaxial waveguide transducer 41 is made of aluminum or brass type W.
Using R42 waveguide, waveguide flange 42 is 22III
An I1-port waveguide flange is used. Then, assuming that the internal wavelength in the waveguide 4 is 7g, the distance from the waveguide short-circuit surface to the high frequency input/output terminal 11 of the first semiconductor device 1 is λg/
8 to λg/4, and the length that this high frequency input/output terminal 11 projects into the waveguide 4 may be λg/10 to λg15.

Therefore, the first and second semiconductor devices 1.
High frequency coupling and power supply connection can be performed by simply supporting 2, making it possible to configure a microwave amplifier extremely easily. Furthermore, since the waveguide flange 42 functions as an outer wall of the microwave amplifier, it can be used when providing a shield or the like, which is effective in simplifying and downsizing the configuration.

As a result, it is possible to obtain a small, lightweight, and effectively operating high frequency circuit device that is equipped with a power supply circuit.

Note that the capacitance of the feedthrough capacitor 5 is appropriately a capacitance that is effective for a frequency at which a short circuit cannot be caused in the first semiconductor device 1 and the second semiconductor device 2 in terms of high frequency.

Although the second semiconductor device 2 is arranged parallel to the E plane of the waveguide 4 here, the same effect can be obtained even if it is arranged parallel to the H plane.

FIG. 2 shows a second embodiment of the present invention, and FIG.
, (b), (C), and (d) are plan views, respectively.

They are a longitudinal cross-sectional view, a bottom view, and a side view. Note that the same or equivalent parts as in the first embodiment are given the same reference numerals.

In this embodiment, the axial length of the waveguide 4 is made long, and coaxial waveguide converters 41 are formed at both ends, respectively.
A second coaxial waveguide converter 43 is formed in the center.

Then, the first semiconductor device 1 is arranged in the waveguide 4, and a third semiconductor device 3 is arranged in line in the axial direction, and this third semiconductor device 3 is converted into the second coaxial waveguide. Vessel 4
3, it is cascade-connected to the first semiconductor device 1 in a high frequency manner. Further, this third semiconductor device 3 is connected in a direct current manner to a second semiconductor device 2 arranged under the waveguide 4 together with the first semiconductor device 1 .

In this embodiment, the first and third semiconductor devices 1°3 are
Since the waveguides 4 are arranged in two waveguides 4 and each is connected to the second semiconductor device 2, the common parts of each semiconductor device can be integrated, and a compact high-frequency circuit device can be constructed with fewer parts.

〔Effect of the invention〕

As described above, the present invention provides a first semiconductor device and a second semiconductor device that are relatively arranged in parallel at a location sandwiched between waveguide flanges of a waveguide provided with a coaxial waveguide converter. However, since the high frequency input/output terminal and the power supply terminal of the first semiconductor device are respectively connected to the same waveguide converter and the second semiconductor device, the first semiconductor device and the second semiconductor device are connected to the waveguide. A high frequency circuit device can be easily constructed by supporting each of the two. Furthermore, the waveguide flange can be used for the outer wall of the device, making it easy to shield semiconductor devices and high-frequency circuit devices, and moreover, it is possible to realize miniaturization of the high-frequency circuit device.

[Brief explanation of drawings]

FIG. 1 shows a first embodiment of the present invention, and FIG.
is a plan view, the same figure (b) is a vertical cross-sectional view in the front direction, and the same figure (C
) is a bottom view, (d) is a vertical cross-sectional view in the side direction, and (
e) is a side view, FIG. 2 shows a second embodiment of the present invention, FIG. 2(a) is a plan view, FIG. Bottom view, the same figure (d) is a side view, 3rd
The figure is a longitudinal sectional view of an example of a conventional high frequency circuit device. DESCRIPTION OF SYMBOLS 1... First semiconductor device, 2... Second semiconductor device, 3... Third semiconductor device, 4... Waveguide, 5...
- Feedthrough capacitor, 6... Volt, 7... Power supply circuit board, 11... High frequency input/output terminal, 12... Power supply terminal, 41... Coaxial waveguide converter, 42... Waveguide flange, 43... second coaxial waveguide converter. Figure 1

Claims (1)

[Claims] 1. a waveguide integrally provided with a coaxial waveguide converter and a waveguide flange, and a first semiconductor device supported on one surface of the waveguide at a location axially sandwiched between the waveguide flanges. and a second semiconductor device disposed parallel to the first semiconductor device and supported on the opposite surface of the waveguide, the high frequency input/output terminal of the first semiconductor device being connected to the coaxial guide. A high frequency circuit device coupled to a wave tube converter, and further comprising a power terminal of a first semiconductor device connected to a second semiconductor device.