JPH02270349A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent problems, such as the deterioration of the characteristics of a circuit due to the electrostatic coupling between wiring materials and between a wiring material and an element, an erroneous operation and the like, from generating by a method wherein a first conductor film and a second conductor film are connected to each other through an opening part provided in first and second insulating films on the side on one side of the wiring material and at the same time, are grounded. CONSTITUTION:A semiconductor device is constituted of a first conductor film 6 formed on a substrate, a wiring material 3 formed through the film 6 and a first insulating film 2 and a second conductor film 8 formed through the material 3 and a second insulating film 4 and the above films 6 and 8 are connected to each other through opening parts 7 provided in the films 2 and 4 on the side on at least one side of the above material 3 and at the same time, are grounded. Thereby, problems, such as the deterioration of the characteristics of a circuit due to the electrostatic coupling between the wiring material surrounded with the grounded conductor films and other wiring material and between the wiring material and an element, an erroneous operation and the like, are not generated and as the restrains of the wiring material are eliminated, an increase in the integration of a semiconductor device becomes possible.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor device, and particularly to a semiconductor device capable of multilayer wiring.

[Prior Art 1] In recent years, as semiconductor devices have become more highly integrated, the wiring between elements has become denser and multilayered.

For example, as shown in FIG. 2, a wiring material 3 is formed on a wiring material 1 formed on a substrate through an insulation 1t@2, and a wiring material 5 is further formed through an insulating film 4. It had a structure that

(Problem to be Solved by the Invention 1) However, in the conventional structure shown in Fig. 2, problems such as deterioration of circuit characteristics and malfunction occur due to electrostatic coupling between each wiring material and between elements. As a result, there are significant restrictions on the placement of each wiring material, and the high concentration of semiconductor devices
This was an obstacle to becoming a.

Therefore, an object of the present invention is to solve such problems.

[Means for solving the problem] A first conductive film formed on a substrate, a wiring material formed via the first conductive film and a first insulating film, and the wiring material. a second conductor film installed through a second insulating film, and the first conductor film and the second conductor film are arranged on at least one side of the wiring material. It is characterized in that it is connected and grounded through openings provided in the first insulating film and the second insulating film.

[Implementation example 1] Hereinafter, one embodiment of the present invention will be described based on the drawings.

First, in the cross-sectional view shown in FIG. A wiring material 3 is formed through the 1llI2, and a conductive film 8 is formed through the wiring material and the insulating film 4. Here, the conductor films 6 and 8 are insulating 11
12.4 through the opening 7 provided therein, and is also connected to the reference potential of the power supply line, etc.

A structure is adopted in which the wiring material 5 is formed on the conductor film 8 with an insulator 1119 interposed therebetween.

In addition, if three or more layers of wiring material are used,
It is also possible to use a portion of the two layers as a grounded conductor film.

[Effects of the Invention] As explained above, according to the present invention, since no electrostatic coupling occurs between the wiring material surrounded by the grounded conductive film and other wiring materials and elements, the static Problems such as deterioration of circuit characteristics and malfunction due to electrical coupling do not occur, and restrictions on the arrangement of wiring materials are eliminated, making it possible to increase the integration of semiconductor devices.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view of a semiconductor device which is an embodiment of the present invention.
FIG. 2 is a sectional view of a conventional semiconductor device. l...Wiring material 2...Insulating film 3...Wiring material 4...Insulating film 5...Wiring material 6...Grounded conductor is provided on body film 7...Insulating film Opening 8...Grounded conductive film 9...Insulating film and above Applicant Seiko Epson Co., Ltd. Agent Patent attorney Kizobe Suzuki (1 representative);
Lily Iλa

Claims (1)

[Claims] A first conductive film formed on a substrate, a wiring material formed through the first conductive film and a first insulating film, and a wiring material formed through the wiring material and a second insulating film. the first insulating film and the second electrically conductive film, and the first electrically conductive film and the second electrically conductive film are connected to each other on at least one side of the wiring material. A semiconductor device characterized in that it is connected and grounded through an opening provided in an insulating film.