JPH02277301A - Package for semiconductor device - Google Patents
Package for semiconductor deviceInfo
- Publication number
- JPH02277301A JPH02277301A JP9806889A JP9806889A JPH02277301A JP H02277301 A JPH02277301 A JP H02277301A JP 9806889 A JP9806889 A JP 9806889A JP 9806889 A JP9806889 A JP 9806889A JP H02277301 A JPH02277301 A JP H02277301A
- Authority
- JP
- Japan
- Prior art keywords
- screw
- semiconductor device
- container
- circuit component
- metal cap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 230000008878 coupling Effects 0.000 abstract description 7
- 238000010168 coupling process Methods 0.000 abstract description 7
- 238000005859 coupling reaction Methods 0.000 abstract description 7
- 230000037431 insertion Effects 0.000 abstract description 3
- 238000003780 insertion Methods 0.000 abstract description 3
- 229920003002 synthetic resin Polymers 0.000 abstract description 2
- 239000000057 synthetic resin Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
- Non-Reversible Transmitting Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は金属製密封型半導体装置用容器に関し、特に容
器の気密性を保ちながら内容積を変化させてマイクロ波
特性の調整を行う半導体装置用容器の構造に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a metal sealed container for semiconductor devices, and in particular to a semiconductor device whose internal volume is changed while maintaining the airtightness of the container to adjust microwave characteristics. This invention relates to the structure of a device container.
従来、第４図に示すように下部導体２」二に搭載された
半導体素子５を含む回路部品と金属キャップ１の上面と
の電磁的な結合を変えてマイクロ波特性を調整する半導
体装置の容器では、金属キャップ１の上部に設けられた
ねじ４の一部を容器内に挿入し、挿入部分の長さを変化
させることでマイクロ波特性を調整する構造であった。Conventionally, as shown in FIG. 4, a semiconductor device has been developed in which microwave characteristics are adjusted by changing the electromagnetic coupling between a circuit component including a semiconductor element 5 mounted on a lower conductor 2'' and the upper surface of a metal cap 1. The container had a structure in which a part of the screw 4 provided at the top of the metal cap 1 was inserted into the container, and the microwave characteristics were adjusted by changing the length of the inserted portion.
しかしながら、上記のような従来の容器では、キャップ
１に設けた調整用ねじ４の部分の気密性が保てず、半導
体装置の信頼性を低下させるという問題がある。However, in the conventional container as described above, there is a problem that the airtightness of the adjustment screw 4 provided in the cap 1 cannot be maintained, which reduces the reliability of the semiconductor device.
本発明の１−１的は１）１ｊ記問題点を解消することを
可能とした新規な半導体装置用容器を提供することにあ
る。Object 1-1 of the present invention is 1) to provide a novel container for semiconductor devices which makes it possible to solve the problems mentioned in item 1j.
上述した従来の半導体装置用容器に対し、本発明は容器
の気密性を保ち、しかも装置のマイクロ波特性を調整で
きるという相違点を有する。The present invention differs from the conventional semiconductor device container described above in that it maintains the airtightness of the container and can adjust the microwave characteristics of the device.
Ｏｕ記目的を達成するため、本発明に係る半導体装置用
容器は回路部品をもつ下部導体と、前記小部導体の」二
部に封着され、前記半導体素子を含む回路部品を封止す
る金Ｊ／ＪＣキャップと、該金属キャップに螺着され、
Ｇｉｊ記回路部品に対する金属キャップ内への挿入量に
応じてマイクロ波特＋１４を調整するねじと、前記ねじ
の螺着部を気密封止する非金属膜とを有するものである
。In order to achieve the object described above, the container for a semiconductor device according to the present invention includes a lower conductor having a circuit component and a gold plate sealed to two parts of the small conductor to seal the circuit component including the semiconductor element. J/JC cap, screwed onto the metal cap,
It has a screw that adjusts the microwave characteristic +14 according to the amount of insertion of the circuit component into the metal cap, and a non-metallic film that hermetically seals the threaded portion of the screw.
次に本発明の実施例について図面を参照しながら具体的
に説明する。Next, embodiments of the present invention will be specifically described with reference to the drawings.
（実施例１）
第１図及び第２図は本発明に係る半導体装置用容器の実
施例１を示す断面図である。第１図及び第２図において
、金属キャップ１は鉄、ニッケル等の金属から形成され
ており、下部導体２に封着されている。この金属キャッ
プ１の内面にはプラスチック等の弾力ある合成樹脂から
なる非金属膜３が厚さ２〜３ ｎｙｎ稈度被着されてい
る。さらに金属キャップ１の上部には調整用ねし４が設
けられており、ねじ４を厄し込むことによってねし４と
半導体素子を含む回路部品５との電磁的結合度を変える
ことかできる。しかも、非金属膜３は半導体装置用容器
の気密性を保っている。例えば、本実施例を誘電体共振
器を用いた発振器に連用した場合には、回路部品として
の誘電体共振器６とねじ４の先端との間隔を共振器６の
厚さの約２倍程度に設定し、この間隔を変えることで、
磁気的な結合を変えて、発振周波数２発振出力を調整す
ることができる。(Example 1) FIGS. 1 and 2 are cross-sectional views showing Example 1 of a semiconductor device container according to the present invention. In FIGS. 1 and 2, a metal cap 1 is made of metal such as iron or nickel, and is sealed to a lower conductor 2. As shown in FIGS. On the inner surface of the metal cap 1, a non-metallic film 3 made of a resilient synthetic resin such as plastic is adhered to a thickness of 2 to 3 nyn. Further, an adjustment screw 4 is provided on the top of the metal cap 1, and by tightening the screw 4, the degree of electromagnetic coupling between the screw 4 and the circuit component 5 including the semiconductor element can be changed. Moreover, the nonmetallic film 3 maintains the airtightness of the semiconductor device container. For example, when this embodiment is applied to an oscillator using a dielectric resonator, the distance between the dielectric resonator 6 as a circuit component and the tip of the screw 4 is approximately twice the thickness of the resonator 6. By setting it to , and changing this interval,
By changing the magnetic coupling, the two oscillation frequencies and the oscillation output can be adjusted.
（実施例２）
第３図は本発明に係る半導体装置用容器の実施例２を示
す断面図である。実施例２においては、例えば伝送線路
となる回路部品としての誘電体基板７と調整用ねじ４と
の距離を基板の厚さの１（１倍１ｉすαに設定し、この
間隔を変えることで電界結合を変えてマイクロ波の伝送
特性を調整することができる。(Example 2) FIG. 3 is a sectional view showing Example 2 of the semiconductor device container according to the present invention. In the second embodiment, for example, the distance between the dielectric substrate 7 as a circuit component serving as a transmission line and the adjustment screw 4 is set to 1 (1 times 1i × α) of the thickness of the substrate, and by changing this distance, Microwave transmission characteristics can be adjusted by changing the electric field coupling.
以」―説明したように、本発明によれば調整用ねじの挿
入部分を非金属Ｎψで覆うことにより、半導体装１１斤
の気密性を保持でき、ねじを上下に動かすことで回路部
品の発生する電磁界あるいは電界とねじとの結合を変化
させて半導体装置のマイクロ波特性を調整できる効果が
ある。As explained above, according to the present invention, by covering the insertion part of the adjustment screw with non-metallic Nψ, the airtightness of the semiconductor device 11 can be maintained, and by moving the screw up and down, the generation of circuit components can be prevented. This has the effect of adjusting the microwave characteristics of the semiconductor device by changing the coupling between the electromagnetic field or the electric field and the screw.
第１図及び第２図は本発明に係る半導体装ｊｉ′（用容
器の実施例１を示す断面図、第３図は本発明の実施例２
を示す断面図、第４図は従来例に係る半導体装置用容器
を示す断面図である。
１・・金属キャップ ２ 下部導体３・・・非金
属膜 ４・調整用ねし５・回路部品
６・誘電体共振器７・・・誘電体基板
特許出願人 ト１本電気株式会社1 and 2 are cross-sectional views showing a first embodiment of a container for a semiconductor device ji' according to the present invention, and FIG.
FIG. 4 is a cross-sectional view showing a conventional semiconductor device container. 1. Metal cap 2 Lower conductor 3... Non-metallic film 4. Adjustment screw 5. Circuit parts
6.Dielectric resonator 7...Dielectric substrate patent applicant Toichimoto Electric Co., Ltd.
Claims (1)
に封着され、前記半導体素子を含む回路部品を封止する
金属キャップと、該金属キャップに螺着され、前記回路
部品に対する金属キャップ内への挿入量に応じてマイク
ロ波特性を調整するねじと、前記ねじの螺着部を気密封
止する非金属膜とを有することを特徴とする半導体装置
用容器。(1) a lower conductor having a circuit component; a metal cap sealed on the upper part of the lower conductor to seal the circuit component including the semiconductor element; and a metal cap screwed onto the metal cap and for the circuit component. 1. A container for a semiconductor device, comprising: a screw that adjusts microwave characteristics depending on the amount inserted into the container; and a non-metallic film that hermetically seals a threaded portion of the screw.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9806889A JPH02277301A (en) | 1989-04-18 | 1989-04-18 | Package for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9806889A JPH02277301A (en) | 1989-04-18 | 1989-04-18 | Package for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02277301A true JPH02277301A (en) | 1990-11-13 |
Family
ID=14210021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9806889A Pending JPH02277301A (en) | 1989-04-18 | 1989-04-18 | Package for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02277301A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07106816A (en) * | 1993-09-30 | 1995-04-21 | Sharp Corp | Satellite broadcast converter |
| JP2012009675A (en) * | 2010-06-25 | 2012-01-12 | Mitsubishi Electric Corp | High frequency semiconductor package |
-
1989
- 1989-04-18 JP JP9806889A patent/JPH02277301A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07106816A (en) * | 1993-09-30 | 1995-04-21 | Sharp Corp | Satellite broadcast converter |
| JP2012009675A (en) * | 2010-06-25 | 2012-01-12 | Mitsubishi Electric Corp | High frequency semiconductor package |
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