JPH02280332A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH02280332A JPH02280332A JP10284489A JP10284489A JPH02280332A JP H02280332 A JPH02280332 A JP H02280332A JP 10284489 A JP10284489 A JP 10284489A JP 10284489 A JP10284489 A JP 10284489A JP H02280332 A JPH02280332 A JP H02280332A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- semiconductor device
- contact window
- conductive organic
- organic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- 239000010410 layer Substances 0.000 abstract description 5
- 229940126543 compound 14 Drugs 0.000 abstract description 4
- 239000011229 interlayer Substances 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- SZUVGFMDDVSKSI-WIFOCOSTSA-N (1s,2s,3s,5r)-1-(carboxymethyl)-3,5-bis[(4-phenoxyphenyl)methyl-propylcarbamoyl]cyclopentane-1,2-dicarboxylic acid Chemical compound O=C([C@@H]1[C@@H]([C@](CC(O)=O)([C@H](C(=O)N(CCC)CC=2C=CC(OC=3C=CC=CC=3)=CC=2)C1)C(O)=O)C(O)=O)N(CCC)CC(C=C1)=CC=C1OC1=CC=CC=C1 SZUVGFMDDVSKSI-WIFOCOSTSA-N 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、コンタクト部分に配線される電極配線を備え
た半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION FIELD OF THE INVENTION The present invention relates to a semiconductor device having electrode wiring wired to a contact portion.
従来の技術
従来、第２図に示すように、半導体基板ｌの一生面上に
層間絶縁膜２をパターンニングしてコンタクト窓３を形
成し、その上にアルミニウム配線４を形成した電極配線
構造が知られている。2. Description of the Related Art Conventionally, as shown in FIG. 2, an electrode wiring structure has been developed in which a contact window 3 is formed by patterning an interlayer insulating film 2 on the whole surface of a semiconductor substrate l, and an aluminum wiring 4 is formed thereon. Are known.
発明が解決しようとする課題
しかし、上記従来の構成では、電極配線として使われて
いるアルミニウム配線４はコンタクト窓３の中央部で厚
くなるのに対し、コンタクト窓３の底部の周辺部の角３
ａで配線が薄くなるため、アルミニウム配線４の配線抵
抗が高くなったり、コンタクト窓３の周辺部の角３ａで
配線が断線しなり、さらに、コンタクト付近で半導体装
置の段差が大きくなるなどの問題を有していた。Problems to be Solved by the Invention However, in the above-mentioned conventional configuration, the aluminum wiring 4 used as the electrode wiring becomes thick at the center of the contact window 3, whereas the aluminum wiring 4 at the bottom peripheral corner 3 of the contact window 3 becomes thick.
Since the wiring becomes thinner at point a, the wiring resistance of the aluminum wiring 4 increases, the wiring breaks at the corner 3a around the contact window 3, and furthermore, the level difference in the semiconductor device increases near the contact. It had
本発明は上記従来の問題を解決するもので、コンタクト
窓部分において断線が起こりにくく、配線抵抗の小さい
電極配線を有し、コンタクト付近で段差が大きくならな
い半導体装置を提供することを目的とするものである。SUMMARY OF THE INVENTION The present invention solves the above-mentioned conventional problems, and aims to provide a semiconductor device that is less likely to be disconnected in the contact window portion, has electrode wiring with low wiring resistance, and does not have large steps near the contacts. It is.
課題を解決するための手段
上記課題を解決するために本発明の半導体装置は、コン
タクト窓部分に配線される電極配線を、前記窓部分にお
けるアルミニウム配線層により形成されな′凹部に導電
性の有機化合物で充填して構成したものである。Means for Solving the Problems In order to solve the above-mentioned problems, the semiconductor device of the present invention has a semiconductor device in which the electrode wiring to be wired in the contact window portion is placed in a recess formed by the aluminum wiring layer in the window portion with a conductive organic material. It is constructed by filling it with a compound.
作用
上記構成により、コンタクト窓部分におけるアルミニウ
ム配線層により形成された凹部に導電性の有機化合物を
充填して電極配線を構成したので、半導体装置の平坦化
が図られるとともに、配線抵抗の低減が図られる。さら
に、コンタクト窓底部の周辺部角における配線の断線は
、その上部に充填された導電性の有機化合物によって救
済されることになる。Effect With the above structure, the electrode wiring is formed by filling the recess formed by the aluminum wiring layer in the contact window portion with a conductive organic compound, so that the semiconductor device can be planarized and the wiring resistance can be reduced. It will be done. Furthermore, a disconnection in the wiring at the peripheral corner of the bottom of the contact window can be relieved by the conductive organic compound filled in the upper part.
実施例
以下に、第１図を参照して本発明の一実施例を説明する
。EXAMPLE An example of the present invention will be described below with reference to FIG.
第１図は本発明の一実施例を示す半導体装置におけるコ
ンタクト窓部分の断面図である。第１図において、半導
体基板１１の−１面上に層間絶縁膜１２をパターンニン
グしてコンタクト窓を形成し、その−Ｌに沿って第一ア
ルミニウム配線１３を形成し、この第一アルミニウム配
線１３により形成された凹部に導電性の有機化合物１４
を充填して平坦化を行い、この第一アルミニウム配線１
３および導電性の有機化合！）！ｆｉ１４の上部に第ニ
アルミニウム配線１５を形成する。FIG. 1 is a sectional view of a contact window portion in a semiconductor device showing one embodiment of the present invention. In FIG. 1, the interlayer insulating film 12 is patterned on the -1 surface of the semiconductor substrate 11 to form a contact window, and a first aluminum wiring 13 is formed along the -L of the contact window. A conductive organic compound 14 is placed in the recess formed by
This first aluminum wiring 1 is filled with aluminum and planarized.
3 and conductive organic compounds! )! A second aluminum wiring 15 is formed on top of fi14.
このように、コンタクト窓部分における第一アルミニウ
ム配線１３により形成された凹部に導電性の有機化合物
１４を充填して構成した電極配線を用いることにより、
半導体装置の平坦化を図ることができるとともに、配線
抵抗を低減することができる。また、コンタクト窓底部
の周辺部の角における配線の断線は、その上部の導電性
の有機化合物およびさらに、その上部の第ニアルミニウ
ム配線１５によって救済することができる。In this way, by using the electrode wiring configured by filling the conductive organic compound 14 into the recess formed by the first aluminum wiring 13 in the contact window portion,
The semiconductor device can be planarized and wiring resistance can be reduced. Moreover, a disconnection of the wiring at the corner of the peripheral part of the bottom of the contact window can be relieved by the conductive organic compound above it and the second aluminum wiring 15 above it.
発明の効果
以上のように本発明によれば、コンタクト窓部分におけ
るアルミニウム配線層の凹部に導電性の有機化合物を充
填して構成した電極配線を用いることにより、配線抵抗
を低減できるとともに、コンタクト付近での半導体装置
の平坦化を図ることができる。また、コンタクト周辺部
角における配線の断線も導電性の有機化合物によって救
済することができる。Effects of the Invention As described above, according to the present invention, by using an electrode wiring formed by filling a concave portion of an aluminum wiring layer in a contact window portion with a conductive organic compound, wiring resistance can be reduced, and the wiring resistance can be reduced near the contact. It is possible to achieve planarization of the semiconductor device. Further, disconnections in the wiring at the peripheral corners of the contacts can also be relieved by using the conductive organic compound.
第１図は本発明の一実施例を示す半導体装置におけるコ
ンタクト窓部分の断面図、第２図は従来の半導体装置に
おけるコンタクト窓部分の断面図である。
１１・・・半導体基板、１２・・・層間絶縁膜、１３・
・・第一アルミニウム配線、１４・・・導電性の有機化
合物、１５・・・第ニアルミニウム配線。
代理人 森 本 義 弘
第１図
第２図FIG. 1 is a sectional view of a contact window portion in a semiconductor device showing an embodiment of the present invention, and FIG. 2 is a sectional view of a contact window portion in a conventional semiconductor device. 11... Semiconductor substrate, 12... Interlayer insulating film, 13.
...First aluminum wiring, 14... Conductive organic compound, 15... Second aluminum wiring. Agent Yoshihiro Morimoto Figure 1 Figure 2
Claims (1)
部分におけるアルミニウム配線層により形成された凹部
に導電性の有機化合物で充填して構成した半導体装置。1. A semiconductor device in which an electrode wiring to be wired in a contact window portion is formed by filling a recess formed by an aluminum wiring layer in the window portion with a conductive organic compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10284489A JPH02280332A (en) | 1989-04-20 | 1989-04-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10284489A JPH02280332A (en) | 1989-04-20 | 1989-04-20 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02280332A true JPH02280332A (en) | 1990-11-16 |
Family
ID=14338273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10284489A Pending JPH02280332A (en) | 1989-04-20 | 1989-04-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02280332A (en) |
-
1989
- 1989-04-20 JP JP10284489A patent/JPH02280332A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH04174541A (en) | Semiconductor integrated circuit and its manufacture | |
| JP2000040674A (en) | Semiconductor device contact forming method and structure thereof | |
| JPH10321815A5 (en) | ||
| EP0387098A3 (en) | Process for making a multilevel interconnection structure | |
| JPH02280332A (en) | Semiconductor device | |
| JP2924088B2 (en) | Semiconductor device | |
| US7164204B2 (en) | Integrated circuit devices with an auxiliary pad for contact hole alignment | |
| JPH0621235A (en) | Semiconductor device | |
| JP2770390B2 (en) | Semiconductor device | |
| JPH0590539A (en) | Semiconductor storage device | |
| JPH0546274Y2 (en) | ||
| JPH02170529A (en) | Semiconductor device | |
| JPS6037747A (en) | Multilayer interconnection | |
| JPS6236284Y2 (en) | ||
| JPH03116852A (en) | Semiconductor device | |
| JPH02170576A (en) | Semiconductor device | |
| JPH11265988A5 (en) | ||
| JPH03155627A (en) | Semiconductor device | |
| JPH01228148A (en) | Semiconductor integrated circuit device | |
| JPS63128731A (en) | Method for forming interconnection | |
| JPS627703B2 (en) | ||
| JPH0434955A (en) | Integrated circuit device | |
| JPH02174164A (en) | Semiconductor device | |
| JPS63237469A (en) | semiconductor equipment | |
| JPS59208856A (en) | Multilayer interconnection |