JPH022830U - - Google Patents

Info

Publication number
JPH022830U
JPH022830U JP7907888U JP7907888U JPH022830U JP H022830 U JPH022830 U JP H022830U JP 7907888 U JP7907888 U JP 7907888U JP 7907888 U JP7907888 U JP 7907888U JP H022830 U JPH022830 U JP H022830U
Authority
JP
Japan
Prior art keywords
sample stage
coating film
top surface
thermal conductivity
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7907888U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7907888U priority Critical patent/JPH022830U/ja
Publication of JPH022830U publication Critical patent/JPH022830U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例の要部を示す縦断面
図、第2図はECRプラズマプロセス装置におけ
る本考案の実施態様を示す断面図、第3図は本考
案と従来の試料台との比較実験による試料温度の
測定結果を示すグラフである。 1は試料台、2は塗膜、Aは試料。
Fig. 1 is a longitudinal cross-sectional view showing the essential parts of an embodiment of the present invention, Fig. 2 is a cross-sectional view showing an embodiment of the present invention in an ECR plasma processing device, and Fig. 3 is a cross-sectional view of the present invention and a conventional sample stage. 3 is a graph showing the measurement results of sample temperature in a comparative experiment. 1 is the sample stage, 2 is the coating film, and A is the sample.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体素子等の製造装置において、上面に、熱
伝導率の良好な中間材の塗膜を所要厚さ形成して
なる試料台を備えたことを特徴とする半導体素子
等の製造装置。
1. A manufacturing device for semiconductor devices, etc., characterized in that the device is equipped with a sample stage on the top surface of which a coating film of an intermediate material with good thermal conductivity is formed to a required thickness.
JP7907888U 1988-06-15 1988-06-15 Pending JPH022830U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7907888U JPH022830U (en) 1988-06-15 1988-06-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7907888U JPH022830U (en) 1988-06-15 1988-06-15

Publications (1)

Publication Number Publication Date
JPH022830U true JPH022830U (en) 1990-01-10

Family

ID=31303966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7907888U Pending JPH022830U (en) 1988-06-15 1988-06-15

Country Status (1)

Country Link
JP (1) JPH022830U (en)

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