JPH02295108A - Resist coating device - Google Patents

Resist coating device

Info

Publication number
JPH02295108A
JPH02295108A JP1116678A JP11667889A JPH02295108A JP H02295108 A JPH02295108 A JP H02295108A JP 1116678 A JP1116678 A JP 1116678A JP 11667889 A JP11667889 A JP 11667889A JP H02295108 A JPH02295108 A JP H02295108A
Authority
JP
Japan
Prior art keywords
resist
semiconductor substrate
wafer chuck
nozzles
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1116678A
Other languages
Japanese (ja)
Inventor
Nobuaki Santo
山東 伸明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1116678A priority Critical patent/JPH02295108A/en
Publication of JPH02295108A publication Critical patent/JPH02295108A/en
Pending legal-status Critical Current

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  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a resist film having a uniform thickness on the surface of a large size semiconductor substrate by a method wherein resist is dropped onto the semiconductor substrate surface from nozzles whose number is increased so as to form coaxial circles of the resist. CONSTITUTION:Five nozzles 2 are provided above a wafer chuck 1. An object to be coated, for instance a semiconductor substrate 3 is placed on the wafer chuck 1 and attracted by vacuum suction holes 1a. If resist 4 is dropped onto the surface of the semiconductor substrate 3 from the five nozzles 2 while the wafer chuck 1 is rotated with a low speed, the resist is so dropped as to form coaxial circles of the resist 4 whose center is the center of rotation of the semiconductor substrate 3 by the respective nozzles 2. After that, if the wafer chuck 1 is rotated with a high speed, the resist 4 dropped onto the surface of the semiconductor substrate 3 is spread over the surface of the semiconductor substrate 3 instantaneously so as to form a continuous resist film and the resist film having a uniform thickness can be formed on the surface of the semiconductor substrate 3.

Description

【発明の詳細な説明】 〔概 要〕 レジスト塗布装置の塗布材料を被塗布物の表面に滴下す
るノズルに関し、 簡単且つ容易に設けることが可能な、複数のノズルを具
備するレジスト塗布装置の提供を目的とし、 ウェハーチャックに被塗布物を搭載して前記ウェハーチ
ャックに設けた真空吸着口により前記被塗布物を吸着固
定し、ウェハーチャックの上部に設けたノズルからレジ
ストを前記被塗布物の表面に滴下し、前記ウェハーチャ
ックを高速回転して前記レジストの薄膜を前記被塗布物
の表面に形成するレジスト塗布装置において、複数の前
記ノズルをウェハーチャックの上部に具備するよう構成
する。
[Detailed Description of the Invention] [Summary] Regarding the nozzles of the resist coating device for dropping the coating material onto the surface of the object to be coated, the present invention provides a resist coating device that is equipped with a plurality of nozzles that can be simply and easily installed. With the aim of In the resist coating apparatus, the resist coating apparatus forms a thin film of the resist on the surface of the object to be coated by rotating the wafer chuck at a high speed.

〔産業上の利用分野〕[Industrial application field]

本発明は、レジスト塗布装置に係り、特に塗布材料を被
塗布物の表面に滴下するノズルに関するものである。
The present invention relates to a resist coating device, and particularly to a nozzle for dropping a coating material onto the surface of an object to be coated.

近年、半導体装置の高集積化、微細化に伴い、半導体基
板の表面に形成するパターンの線幅を安定させることが
必要になり、そのために形成するレジスト膜の膜厚のバ
ラツキを抑えることが必要になっている. 以上のような状況から半導体基板の表面に均一な膜厚の
レジスト膜を形成することが可能なレジスト塗布装置が
要望されている。
In recent years, with the increasing integration and miniaturization of semiconductor devices, it has become necessary to stabilize the line width of patterns formed on the surface of semiconductor substrates, and for this purpose it is necessary to suppress variations in the thickness of the resist film formed. It has become. Under the above circumstances, there is a need for a resist coating apparatus that can form a resist film of uniform thickness on the surface of a semiconductor substrate.

〔従来の技術〕[Conventional technology]

従来のレジスト塗布装置を第2図により説明する。 A conventional resist coating apparatus will be explained with reference to FIG.

従来のレジスト塗布装置においては第2図に示すように
、被塗布物、例えば半導体基板3はウェハーチャック1
の表面に搭載され、ウェハーチャック1に設けた真空吸
着口1aにより吸着固定されている。
In a conventional resist coating apparatus, as shown in FIG.
The wafer chuck 1 is mounted on the surface of the wafer chuck 1 and fixed by suction through a vacuum suction port 1a provided in the wafer chuck 1.

つぎに、このウェハーチャック1の上部に設けられてい
るノズル2からレジスト4を半導体基板3の中央部に滴
下し、ウェハーチャック1を高速回転してレジスト4の
薄膜を半導体基板3の表面に形成している。
Next, a resist 4 is dropped onto the center of the semiconductor substrate 3 from a nozzle 2 provided at the top of the wafer chuck 1, and the wafer chuck 1 is rotated at high speed to form a thin film of the resist 4 on the surface of the semiconductor substrate 3. are doing.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

以上説明した従来のレジスト塗布装置においては、ウェ
ハーチャックに真空により吸着固定した半導体基板に、
ただ一本のノズルによってレジストを半導体基板の中央
部に滴下し、ウェハーチャックを高速回転してレジスト
の薄膜を半導体基板の表面に形成しているので、半導体
基板の直径が大きい大径化した半導体基板の場合には、
レジストの滴下位置と半導体基板の周辺との距離が大き
いから、レジストを半導体基板の表面に塗り広げてゆく
過程において、レジストの溶剤が蒸発するために形成さ
れたレジスト膜厚が不均一になるという問題点があった
In the conventional resist coating apparatus described above, the semiconductor substrate is vacuum-adsorbed and fixed to the wafer chuck.
The resist is dropped onto the center of the semiconductor substrate using a single nozzle, and the wafer chuck is rotated at high speed to form a thin film of resist on the surface of the semiconductor substrate. In the case of the board,
Because the distance between the droplet position of the resist and the periphery of the semiconductor substrate is large, the resist solvent evaporates during the process of spreading the resist over the surface of the semiconductor substrate, resulting in uneven resist film thickness. There was a problem.

本発明は以上のような状況から簡単且つ容易に設けるこ
とが可能な、複数のノズルを具備するレジスト塗布装置
の提供を目的としたものである。
SUMMARY OF THE INVENTION In view of the above-mentioned circumstances, it is an object of the present invention to provide a resist coating device equipped with a plurality of nozzles, which can be simply and easily installed.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のレジスト塗布装置は、ウェハーチャックに被塗
布物を搭載してこのウェハーチャックに設けた真空吸着
口によりこの被塗布物を吸着固定し、ウェハーチャック
の上部に設けたノズルからレジストを被塗布物の表面に
滴下し、このウェハーチャックを高速回転してレジスト
の薄膜をこの被塗布物の表面に形成するレジスト塗布装
置において、複数のノズルををウェハーチャックの上部
に具備するよう構成する。
The resist coating device of the present invention mounts an object to be coated on a wafer chuck, suctions and fixes the object through a vacuum suction port provided on the wafer chuck, and applies resist through a nozzle provided at the top of the wafer chuck. A resist coating apparatus for forming a thin film of resist on the surface of an object by dropping a drop onto the surface of an object and rotating the wafer chuck at high speed is configured to include a plurality of nozzles on the upper part of the wafer chuck.

〔作用〕[Effect]

即ち本発明においては、ウェハーチャックの上部に複数
のノズルを設け、このウェハーチャックに搭載する被塗
布物を真空により吸着固定し、ウェハーチャックを低速
で回転させながら、この被塗布物の表面にそれぞれのノ
ズルからレジストを滴下して半導体基板の回転中心を中
心とする同心円状にレジストを滴下し、その後ウェハー
チャックを高速で回゜転してレジストの薄膜を半導体基
板の表面に形成することが可能となる。
That is, in the present invention, a plurality of nozzles are provided on the upper part of the wafer chuck, the object to be coated mounted on the wafer chuck is fixed by vacuum suction, and while the wafer chuck is rotated at low speed, each nozzle is applied to the surface of the object to be coated. It is possible to drop resist from the nozzle in a concentric circle around the rotation center of the semiconductor substrate, and then rotate the wafer chuck at high speed to form a thin film of resist on the surface of the semiconductor substrate. becomes.

〔実施例〕〔Example〕

以下第1図により本発明の一実施例を、5本のノズルを
具備するレジスト塗布装置について説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. 1 regarding a resist coating apparatus equipped with five nozzles.

本実施例においては、第1図(alに示すようにウェハ
ーチャック1の上部には5本のノズル2が設けられてい
る。
In this embodiment, as shown in FIG. 1 (al), five nozzles 2 are provided on the upper part of the wafer chuck 1.

ウェハーチャック1に搭載された被塗布物、例えば半導
体基板3は真空吸着口1aにより吸着固定されている。
An object to be coated, such as a semiconductor substrate 3, mounted on the wafer chuck 1 is suctioned and fixed by the vacuum suction port 1a.

このウェハーチャック1を低速、例えば1〜2rpmで
回転させながらこの5本のノズル2によりレジストを半
導体基板3の表面に滴下すると、第1図(b)に示すよ
うにそれぞれのノズル2によって半導体基板3の回転中
心を中心とする同心円上にレジスト4が滴下される。
When the resist is dropped onto the surface of the semiconductor substrate 3 by the five nozzles 2 while rotating the wafer chuck 1 at a low speed, for example, 1 to 2 rpm, each nozzle 2 drops the resist onto the surface of the semiconductor substrate 3 as shown in FIG. 1(b). A resist 4 is dropped on a concentric circle centered on the rotation center of the resist 4.

その後ウェハーチャック1を高速回転、例えば5. O
OOrpa+で回転させると、半導体基板3の表面に滴
下されたレジスト4が瞬時にして連続した状態で半導体
基板3の表面に広がり、膜厚io,ooo八のレジスト
膜が半導体基板3の表面に形成される。
After that, the wafer chuck 1 is rotated at high speed, for example, 5. O
When rotated with OOrpa+, the resist 4 dropped on the surface of the semiconductor substrate 3 instantly spreads in a continuous state over the surface of the semiconductor substrate 3, and a resist film with a film thickness of io, ooo 8 is formed on the surface of the semiconductor substrate 3. be done.

このようにウェハーチャック1を低速回転しながら、複
数のノズル2からそれぞれレジストを半導体基板3の表
面に滴下して同心円状にレジスト4を滴下し、その後ウ
ェハーチャック1を高速回転してレジスト4の薄膜を形
成するので、レジスト4を半導体基板3の表面に塗り広
げるのに時間を要しないから、レジスト4に含まれてい
る溶剤が蒸発するまでにレジスト4を半導体基仮3の表
面に塗布することが可能となる。
While rotating the wafer chuck 1 at a low speed in this manner, the resist 4 is dropped concentrically from the plurality of nozzles 2 onto the surface of the semiconductor substrate 3, and then the wafer chuck 1 is rotated at a high speed to coat the resist 4. Since a thin film is formed, it does not take time to spread the resist 4 over the surface of the semiconductor substrate 3, so the resist 4 is applied to the surface of the semiconductor substrate 3 before the solvent contained in the resist 4 evaporates. becomes possible.

〔発明の効果〕〔Effect of the invention〕

以上の説明から明らかなように本発明によれば、ノズル
の数を増加して半導体基板の表面に同心円状のレジスト
を滴下するので、大型化した半導体基板の表面に均一な
膜厚のレジスト膜を形成することが可能となり、このレ
ジスト膜を用いて半導体装置のパターンを形成すると線
幅の均一なパターンの形成が可能になる等の利点があり
、著しい信頼性向上の効果が期待できるレジスト塗布装
置の提供が可能である。
As is clear from the above description, according to the present invention, the number of nozzles is increased to drop concentric resist on the surface of a semiconductor substrate, so that a resist film with a uniform thickness can be formed on the surface of an enlarged semiconductor substrate. It is now possible to form a pattern for a semiconductor device using this resist film, which has the advantage of being able to form a pattern with a uniform line width, and is a resist coating that can be expected to significantly improve reliability. Equipment can be provided.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明による一実施例を示す図、第2図は従来
のレジスト塗布装置を示す図、である。 図において、 1はウエハーチャンク、 1aは真空吸着口、 2はノズル、 3は半導体基板、 4はレジスト、 を示す。 +at  側断面図 従来のレジスト塗布装置を示す図 第2図 fbl  A−A矢視 本発明による一大施例を示す図 第 1 図
FIG. 1 is a diagram showing an embodiment of the present invention, and FIG. 2 is a diagram showing a conventional resist coating apparatus. In the figure, 1 is a wafer chunk, 1a is a vacuum suction port, 2 is a nozzle, 3 is a semiconductor substrate, and 4 is a resist. +at Side cross-sectional view A diagram showing a conventional resist coating device FIG. 2 fbl A diagram showing a large-scale embodiment according to the present invention as viewed from the A-A arrow FIG.

Claims (1)

【特許請求の範囲】 ウェハーチャック(1)に被塗布物(3)を搭載して前
記ウェハーチャック(1)に設けた真空吸着口(1a)
により前記被塗布物(3)を吸着固定し、ウェハーチャ
ック(1)の上部に設けたノズル(2)からレジスト(
4)を前記被塗布物(3)の表面に滴下し、前記ウェハ
ーチャック(1)を高速回転して前記レジスト(4)の
薄膜を前記被塗布物(3)の表面に形成するレジスト塗
布装置において、 複数の前記ノズル(2)をウェハーチャック(1)の上
部に具備することを特徴とするレジスト塗布装置。
[Claims] A vacuum suction port (1a) provided on the wafer chuck (1) with the object to be coated (3) mounted on the wafer chuck (1).
The object to be coated (3) is suctioned and fixed, and the resist (
4) onto the surface of the object to be coated (3), and rotates the wafer chuck (1) at high speed to form a thin film of the resist (4) on the surface of the object to be coated (3). A resist coating apparatus characterized in that a plurality of the nozzles (2) are provided on an upper part of a wafer chuck (1).
JP1116678A 1989-05-09 1989-05-09 Resist coating device Pending JPH02295108A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1116678A JPH02295108A (en) 1989-05-09 1989-05-09 Resist coating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1116678A JPH02295108A (en) 1989-05-09 1989-05-09 Resist coating device

Publications (1)

Publication Number Publication Date
JPH02295108A true JPH02295108A (en) 1990-12-06

Family

ID=14693173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1116678A Pending JPH02295108A (en) 1989-05-09 1989-05-09 Resist coating device

Country Status (1)

Country Link
JP (1) JPH02295108A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823439A (en) * 1981-08-04 1983-02-12 Nec Kyushu Ltd Semiconductor device
JPS62195121A (en) * 1986-02-21 1987-08-27 Nec Corp Spin coater
JPS62286225A (en) * 1986-06-04 1987-12-12 Nec Corp Semiconductor manufacturing equipment
JPS63151021A (en) * 1986-12-16 1988-06-23 Matsushita Electric Ind Co Ltd Method and apparatus for applying resist

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823439A (en) * 1981-08-04 1983-02-12 Nec Kyushu Ltd Semiconductor device
JPS62195121A (en) * 1986-02-21 1987-08-27 Nec Corp Spin coater
JPS62286225A (en) * 1986-06-04 1987-12-12 Nec Corp Semiconductor manufacturing equipment
JPS63151021A (en) * 1986-12-16 1988-06-23 Matsushita Electric Ind Co Ltd Method and apparatus for applying resist

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