JPH02296301A - Manufacture of voltage nonlinear resistance element - Google Patents
Manufacture of voltage nonlinear resistance elementInfo
- Publication number
- JPH02296301A JPH02296301A JP1116803A JP11680389A JPH02296301A JP H02296301 A JPH02296301 A JP H02296301A JP 1116803 A JP1116803 A JP 1116803A JP 11680389 A JP11680389 A JP 11680389A JP H02296301 A JPH02296301 A JP H02296301A
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- varistor
- powder
- electrode
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は酸化亜鉛を主成分とする低電圧回路用電圧非
直線抵抗素子に係り、特に酸化亜鉛焼結体への金属電極
の形成に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a voltage nonlinear resistance element for low voltage circuits containing zinc oxide as a main component, and particularly to the formation of metal electrodes on a zinc oxide sintered body.
ZnOを主成分としこれに微量の添加物を加えて混合し
た後焼結して作られるセラミックスは、優れた電圧非直
線性を示すことが知られており、電気回路における異常
電圧(サージ)を制御するためのバリスタとして広く実
用に供されている。このようなバリスタは第3図に示す
工程に従って製造される。Ceramics, which are made by mixing ZnO with a small amount of additives and sintering it as a main component, are known to exhibit excellent voltage nonlinearity, and are useful for suppressing abnormal voltages (surges) in electrical circuits. It is widely used as a varistor for control purposes. Such a varistor is manufactured according to the steps shown in FIG.
ZnDバリスタの電圧非直線性は、Zn[]結晶粒の粒
界に形成される二重ショットキー障壁に起因するもので
ある。実用的なバリスタにおいては、ZnO結晶粒が結
合して形成される粒界1層当たりのバリスタ電圧は結晶
粒径の大きさにかかわらずほぼ一定であり、その値は2
V程度である。(バリスタ電圧とは、バリスタに1mへ
の電流を流したときの端子間電圧で、通常VImAで表
される。)したがって、電圧非直線抵抗素子のバリスタ
電圧はZnD焼結体の対向する面上に設けられた電極間
に存在する粒界層の数によって決定される。The voltage nonlinearity of the ZnD varistor is due to double Schottky barriers formed at the grain boundaries of Zn[] grains. In a practical varistor, the varistor voltage per grain boundary layer formed by the combination of ZnO crystal grains is almost constant regardless of the crystal grain size, and its value is 2
It is about V. (Varistor voltage is the voltage between the terminals when a current of 1 m is passed through the varistor, and is usually expressed as VImA.) Therefore, the varistor voltage of the voltage nonlinear resistance element is It is determined by the number of grain boundary layers that exist between the electrodes provided in the .
ところで、ZnOバリスクの電極には、銀、アルミニウ
ムが用いられるが、避雷器用のZn[]素子以外は銀ペ
ーストを焼付けてこれを電極とするのが一般的である。By the way, silver and aluminum are used for the electrodes of ZnO balisks, but except for Zn[] elements for lightning arresters, it is common to bake silver paste and use this as the electrode.
この場合銀電極とZnO焼結体界面にショットキー障壁
が形成され1mへの電流をながしたときに電極/ZnO
焼結体界面のショットキー障壁により約3vの電圧が発
生する。したがって、この電極/ Z n O焼結体界
面障壁はバリスタ電圧が低くなるほど、無視できなくな
ってくる。In this case, a Schottky barrier is formed at the interface between the silver electrode and the ZnO sintered body, and when a current of 1 m is passed, the electrode/ZnO
A voltage of approximately 3V is generated due to the Schottky barrier at the interface of the sintered body. Therefore, this electrode/ZnO sintered body interface barrier becomes impossible to ignore as the varistor voltage becomes lower.
例えばDC12V回路にZn(]バパリスを適用する場
合、回路電圧の変動などを考慮してバリスタ電圧は一般
に22Vのものが使用されるが、前述のように粒界1層
当たりのバリスタ電圧は約2Vであるからこの素子の対
向する電極間に11層の粒界が存在することになる。と
ころが」−述の電極/ZnD焼結体界面障壁のため、Z
t’+I]焼結体の粒界が有するバリスタ電圧と電極/
焼結体界面が有するバリスタ電圧の合計を22Vとしな
ければならない。このた約実際にはバリスタ電圧が低く
なるにつれて、焼結体の数から求められるバリスタ電圧
と実測したバリスタ電圧間の差が大きくなるので焼結体
の粒界の数を減らさなければならない。このために焼結
体厚さを減らずと(1)焼結体の機械的強度が低下する
(2)雷サージ、開閉サージなどのサージエネルギの吸
収能力(サージ耐量)は焼結体の体積に比例するのでサ
ージ耐量特性が低下するなどの問題があった。For example, when applying a Zn(] varistor to a DC12V circuit, a varistor voltage of 22V is generally used in consideration of circuit voltage fluctuations, but as mentioned above, the varistor voltage per grain boundary layer is approximately 2V. Therefore, 11 layers of grain boundaries exist between the opposing electrodes of this element.However, due to the electrode/ZnD sintered body interface barrier mentioned above,
t'+I] Varistor voltage and electrode of grain boundaries of sintered body/
The total varistor voltage at the sintered body interface must be 22V. In practice, as the varistor voltage decreases, the difference between the varistor voltage determined from the number of sintered bodies and the actually measured varistor voltage increases, so the number of grain boundaries in the sintered body must be reduced. For this reason, unless the thickness of the sintered body is reduced, (1) the mechanical strength of the sintered body will decrease (2) the ability to absorb surge energy (surge resistance) such as lightning surges and switching surges will depend on the volume of the sintered body. Since it is proportional to
また、電極/焼結体界面のショットキー障壁は、ZnO
焼結体自身の粒界に存在するンヨットキー障壁に比ベサ
ージ耐量が低いので、バリスタ電圧が低くなるほどサー
ジによるバリスタ電圧の変化量が大きくなるという欠点
があり、さらに電極/焼結体界面に形成されるンヨット
キー障壁は、組立て工程例えばハンダ付工程、樹脂モー
ルド工程で変動しやすくバリスタ電圧の工程管理が困芙
11になるという問題があった。In addition, the Schottky barrier at the electrode/sintered body interface is
The Njotsky barrier existing at the grain boundaries of the sintered body itself has a low relative Vesage resistance, so the lower the varistor voltage is, the greater the change in varistor voltage due to surges becomes. There is a problem in that the varistor voltage is easily fluctuated during the assembly process, such as the soldering process and the resin molding process, making process control of the varistor voltage difficult.
この発明は上述の点に鑑みてなされたものでその目的は
焼結体と金属電極間のショットキー障壁をなくすことに
より、機械的強度、サージ耐量に優れ、工程管理も容易
な低電圧用電圧非直線抵抗素子を提供することにある。This invention was made in view of the above points, and its purpose is to eliminate the Schottky barrier between the sintered body and the metal electrode, thereby providing a low-voltage voltage with excellent mechanical strength and surge resistance, and easy process control. An object of the present invention is to provide a non-linear resistance element.
上述の目的はこの発明によれば、酸化亜鉛の粉末と電圧
非直線性を生じさせる微量の添加物粉末とを混合し焼成
した焼結体の電極を設ける面を研削し、その後電極を形
成するものとする。According to the present invention, the above-mentioned purpose is to grind the surface of a sintered body prepared by mixing zinc oxide powder and a small amount of additive powder that causes voltage nonlinearity, and then to form an electrode. shall be taken as a thing.
電極を設ける面を予め超音波研削またはプラスト加工す
ることにより核間の表面層に破壊による表面欠陥層が形
成され、このため低抵抗な領域ができる。By ultrasonic grinding or blast processing the surface on which the electrodes are to be provided, a surface defect layer is formed in the surface layer between the nuclei due to destruction, thereby creating a low resistance region.
上記低抵抗な層により、焼結体/電極界面に形成されろ
はずのショットキー障壁は消滅する。The low resistance layer eliminates the Schottky barrier that would otherwise be formed at the sintered body/electrode interface.
次に本発明の実施例を図面に基づいて説明する。 Next, embodiments of the present invention will be described based on the drawings.
第2図にこの発明の実施例に係る抵抗素子の製造工程が
示される。まずZnO粉末にPr’、’Co −Bな
どを酸化物などの化合物の形で適量添加したあと混合、
造粒しZnOバリスク用造粒造粒粉製される。FIG. 2 shows the manufacturing process of a resistance element according to an embodiment of the present invention. First, an appropriate amount of Pr', 'Co-B, etc. is added to ZnO powder in the form of compounds such as oxides, and then mixed.
Granulated powder for ZnO barisque is produced.
この造粒粉を直径17mmの金型を使用して厚さ1.2
5層mmの円板状に成形する。次いでこの成形体を酸化
性雰囲気中において1350℃の温度で4h焼成する。This granulated powder was molded into a mold with a diameter of 17 mm to a thickness of 1.2 mm.
Form into a disk shape with 5 layers and a thickness of 5 mm. Next, this molded body is fired at a temperature of 1350° C. for 4 hours in an oxidizing atmosphere.
得られた焼結体の大きさは直径14mm、厚さ10mm
であった。The size of the obtained sintered body was 14 mm in diameter and 10 mm in thickness.
Met.
上記のようにして作られた焼結体の対向する両主面を超
音波研削により片面で1〜2μm研削した。Both opposing principal surfaces of the sintered body produced as described above were ground by 1 to 2 μm on one side by ultrasonic grinding.
超音波研削した欠陥層の表面抵抗は1mAの電流を流し
た時に1にΩ以下であった。無処理のものよ20にΩ以
」二であった、。The surface resistance of the ultrasonically ground defect layer was less than 1Ω when a current of 1 mA was applied. The untreated one was less than 20Ω.
上記処理をした焼結体に銀ペーストを塗布後焼付けてバ
リスタを構成した。第1図に模式断面図が示される。3
は焼結体であり、2ハ、2Bは研削により形成された欠
陥層であり、1Δ、IBは金属電極である。続いてバリ
スタ特性を測定した。A varistor was constructed by applying silver paste to the sintered body treated as described above and then baking it. A schematic cross-sectional view is shown in FIG. 3
is a sintered body, 2C and 2B are defect layers formed by grinding, and 1Δ and IB are metal electrodes. Subsequently, the varistor characteristics were measured.
さらに組立後のバリスタ特性も評価した。結果が第1表
に示される。We also evaluated the varistor characteristics after assembly. The results are shown in Table 1.
/
第1表
第2表はサージを加えたときの組立て後におけるサージ
耐量(A)を示しである。ただしサージ耐量は8/20
μs標準電流パルスを素子に2分間隔で2回流した後の
VlmA の変化率が±10%となる電流で規定した。/ Table 1 and Table 2 show the surge resistance (A) after assembly when a surge is applied. However, the surge resistance is 8/20
The current was defined as the current at which the rate of change in VlmA after passing a μs standard current pulse through the device twice at 2-minute intervals was ±10%.
第2表
第1表にはvl。A + VlmA の変動係数、電流
100μΔ〜1mA領域における電圧非直線係数αを、
電極づけ後1組立後について従来法と比較して示した。Table 2 Table 1 shows vl. The variation coefficient of A + VlmA, the voltage nonlinear coefficient α in the current 100 μΔ ~ 1 mA region,
A comparison with the conventional method is shown after one assembly after electrode attachment.
さらに参考データとしてZnD焼結体とショットキー障
壁を形成しない1n−Ga電極を用いたときの特性も併
せて示した。この結果から本発明の方法によると電極づ
け後と組立て後の特性変動はなく、従来法に比べ優れて
いることがわかる。Furthermore, as reference data, characteristics when using a ZnD sintered body and a 1n-Ga electrode that does not form a Schottky barrier are also shown. From these results, it can be seen that the method of the present invention has no characteristic variation after electrode attachment and after assembly, and is superior to the conventional method.
第2表から明らかなように、本発明方法の方が優れてい
ることがわかる。この理由は次のように考えられる。即
ち、焼結体そのもののサージ耐量は1200OAである
が、従来の素子では電極/焼結体界面に形成される障壁
がサージにより変化しゃすいた5 V 1m A が2
0V素子の場合、電極/焼結体界面障壁が2V変化する
と10%の変化となるからである。このようにバリスタ
電圧が低くなればなるほど従来方法で作製されたZnO
バリスタ素子のサージ耐量は見掛は上低くなるという欠
点が解消される。As is clear from Table 2, the method of the present invention is superior. The reason for this is thought to be as follows. That is, the surge withstand capacity of the sintered body itself is 1200OA, but in the conventional element, the barrier formed at the electrode/sintered body interface is less likely to change due to a surge, which is 5V 1mA, but 2.
This is because in the case of a 0V element, a 2V change in the electrode/sintered body interface barrier results in a 10% change. In this way, the lower the varistor voltage, the lower the ZnO produced by the conventional method.
This eliminates the drawback that the surge resistance of the varistor element is apparently low.
なお、上述した実施例では超音波研削による低抵抗層の
形成方法について述べたが同様な効果はブラスト加工に
おいても確認された。また実施例では円板状焼結体につ
いて示したが本発明の効果は形状によらず、また対向す
る電極の場合のみならず二つの電極を同一平面上に設け
たときにも確かめられる。In addition, although the above-mentioned example described the method of forming the low resistance layer by ultrasonic grinding, a similar effect was confirmed by blasting. Further, although the embodiments have been described with respect to a disk-shaped sintered body, the effects of the present invention are not dependent on the shape, and can be confirmed not only when the electrodes are opposed to each other but also when two electrodes are provided on the same plane.
この発明によれば酸化亜鉛の粉末と電圧非直線性を生じ
させる微量の添加物粉末とを混合し焼成した焼結体の電
極を設ける面を超音波研削またはブラスト加工すること
により、焼結体/電極間に低抵抗層を導入することがで
き、このため焼結体/電極間のショットキー障壁が消滅
して機械的強度とサージ耐量に優れかつ製造上の工程管
理の容易な電圧非直線抵抗素子が得られる。According to this invention, the sintered body is produced by mixing zinc oxide powder and a small amount of additive powder that causes voltage nonlinearity and firing the surface of the sintered body on which the electrode is to be provided by ultrasonic grinding or blasting. / A low resistance layer can be introduced between the electrodes, which eliminates the Schottky barrier between the sintered body and the electrodes, resulting in voltage non-linearity with excellent mechanical strength and surge resistance, and easy manufacturing process control. A resistive element is obtained.
第1図はこの発明の実施例に係る電圧非直線抵抗素子を
示す模式断面図、第2図はこの発明の実施例に係る抵抗
素子の製造工程を示す流れ図、第3図は従来の米子の製
造工程を示す流れ図である。
1Δ、IB 金属電極、2A、2B 欠陥層、第
図
第
図FIG. 1 is a schematic cross-sectional view showing a voltage nonlinear resistance element according to an embodiment of the present invention, FIG. 2 is a flowchart showing the manufacturing process of a resistance element according to an embodiment of this invention, and FIG. It is a flow chart showing a manufacturing process. 1Δ, IB Metal electrode, 2A, 2B Defect layer, Fig.
Claims (1)
添加物粉末とを混合し焼成した焼結体の電極を設ける面
を研削し、その後電極を形成することを特徴とする電圧
非直線抵抗素子の製造方法。1) Voltage nonlinearity, which is characterized by grinding the surface of a sintered body made by mixing zinc oxide powder and a small amount of additive powder that causes voltage nonlinearity, on which electrodes are to be provided, and then forming the electrodes. A method of manufacturing a resistive element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1116803A JPH02296301A (en) | 1989-05-10 | 1989-05-10 | Manufacture of voltage nonlinear resistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1116803A JPH02296301A (en) | 1989-05-10 | 1989-05-10 | Manufacture of voltage nonlinear resistance element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02296301A true JPH02296301A (en) | 1990-12-06 |
Family
ID=14696052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1116803A Pending JPH02296301A (en) | 1989-05-10 | 1989-05-10 | Manufacture of voltage nonlinear resistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02296301A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1920445A4 (en) * | 2004-12-22 | 2011-03-02 | Abb Research Ltd | METHOD FOR PRODUCING A VARISTOR |
-
1989
- 1989-05-10 JP JP1116803A patent/JPH02296301A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1920445A4 (en) * | 2004-12-22 | 2011-03-02 | Abb Research Ltd | METHOD FOR PRODUCING A VARISTOR |
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