JPH02296302A - Manufacture of voltage nonlinear resistance element - Google Patents

Manufacture of voltage nonlinear resistance element

Info

Publication number
JPH02296302A
JPH02296302A JP1116804A JP11680489A JPH02296302A JP H02296302 A JPH02296302 A JP H02296302A JP 1116804 A JP1116804 A JP 1116804A JP 11680489 A JP11680489 A JP 11680489A JP H02296302 A JPH02296302 A JP H02296302A
Authority
JP
Japan
Prior art keywords
sintered body
electrode
powder
varistor
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1116804A
Other languages
Japanese (ja)
Inventor
Koichi Tsuda
孝一 津田
Takashi Ishii
石井 孝志
Tsutomu Koyama
勉 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP1116804A priority Critical patent/JPH02296302A/en
Publication of JPH02296302A publication Critical patent/JPH02296302A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To make it excellent in mechanical strength and surge quantity resistance, and to facilitate process management by applying laser beam on the face on which an electrode of a sintered body formed by mixing and baking powder of an zinc oxide and a very small amount of additive powder which generates voltage nonlinearity is provided so as to apply heat treatment to the surface and then forming an electrode. CONSTITUTION:Proper amounts of Pr, Co, B, etc., in the form of compounds such as oxides, etc., are added to ZnO powder and then those are mixed and granulated so as to make up granulated powder for ZnO varistor. This granulated powder is formed into a disc shape 1.25mm in thickness using a mold 17mm in diameter, and next this compact is baked for 4 hours at a temperature of 1350 deg.C in the oxidizing atmosphere. The size of the sintered body being obtained is 14mm in diameter and 1.0mm in thickness. Both opposed main faces of the sintered body being made this way is heat-treated in N2 gas by Ar laser, and then silver paste is applied on the sintered body so as to constitute a varistor. Hereby, it becomes excellent in mechanical strength and surge quantity resistance and process management in manufacturing becomes easy.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は酸化亜鉛を主成分とする低電圧回路用電圧非
直線抵抗素子に係り、特に酸化亜鉛焼結体への金属電極
の形成に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a voltage nonlinear resistance element for low voltage circuits containing zinc oxide as a main component, and particularly to the formation of metal electrodes on a zinc oxide sintered body.

〔従来の技術〕[Conventional technology]

ZnDを主成分としこれに微量の添加物を加えて混合し
た後焼結して作られるセラミックスは、優れた電圧非直
線性を示すことが知られており、電気回路における異常
電圧(サージ)を制御するだめのバリスタとして広く実
用に供されている。このようなバリスタは第3図に示す
工程に従って製造される。
Ceramics, which are made by mixing ZnD with a small amount of additives and sintering it as a main component, are known to exhibit excellent voltage nonlinearity, and are useful for suppressing abnormal voltages (surges) in electrical circuits. It is widely used as a control varistor. Such a varistor is manufactured according to the steps shown in FIG.

ZnOバリスタの電圧非直線性は、2nD結晶粒の粒界
に形成される二重ショットキー障壁に起因するものであ
る。実用的なバリスタにおいては、ZnO結晶粒が結合
して形成される粒界1層当たりのバリスタ電圧は結晶粒
径の大きさにかかわらずほぼ一定であり、その値は2V
程度である。(バリスタ電圧とは、バリスタに1mへの
電流を流したときの端子間電圧で、通常V + m A
で表わされる。)したがって、電圧非直線抵抗素子のバ
リスタ電圧はZnO焼結体の対向する面上に設けられた
電極間に存在する粒界層の数によって決定される。
The voltage nonlinearity of the ZnO varistor is due to the double Schottky barrier formed at the grain boundaries of the 2nD grains. In a practical varistor, the varistor voltage per grain boundary layer formed by the combination of ZnO crystal grains is almost constant regardless of the crystal grain size, and its value is 2V.
That's about it. (Varistor voltage is the voltage between the terminals when a current of 1 m is passed through the varistor, usually V + mA
It is expressed as ) Therefore, the varistor voltage of the voltage nonlinear resistance element is determined by the number of grain boundary layers existing between the electrodes provided on the opposing surfaces of the ZnO sintered body.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところで、ZnOバリスタの電極には、銀、アルミニウ
ムが用いられるが、避雷器用のZnO素子以外は銀ペー
ストを焼付けてこれを電極とするのが一般的である。 
この場合銀電極と2rrO焼結体界面にショットキー障
壁が形成され1mAの電流を流したときに電極/ Z 
n O焼結体界面のショットキー障壁により約3Vの電
圧が発生する。したがって、この電極/ Zn D焼結
体界面障壁はバリスタ電圧が低くなるほど、無視できな
くなってくる。
By the way, silver and aluminum are used for the electrodes of ZnO varistors, and except for ZnO elements for lightning arresters, it is common to bake silver paste and use this as the electrode.
In this case, a Schottky barrier is formed at the interface between the silver electrode and the 2rrO sintered body, and when a current of 1 mA is passed, the electrode/Z
A voltage of about 3 V is generated due to the Schottky barrier at the interface of the n O sintered body. Therefore, this electrode/ZnD sintered body interface barrier becomes impossible to ignore as the varistor voltage becomes lower.

例えばD C12V回路にZnOバリスタを適用する場
合、回路電圧の変動などを考慮してバリスタ電圧は一般
に22Vのものが使用されるが、前述のように粒界1層
当たりのバリスタ電圧は約2Vであるからこの素子の対
向する電極間に11層の粒界が存在することになる。 
ところが上述の電極/ Z n O焼結体界面障壁のた
め、ZnO焼結体の粒界が有するバリスタ電圧と電極/
焼結体界面が有するバリスタ電圧の合計を22Vとしな
ければならない。このため実際にはバリスタ電圧が低く
なるにつれて、焼結体の数から求められるバリスタ電圧
と実測したバリスタ電圧間の差が大きくなるので焼結体
の粒界の数を減らさなければならない。このた必に焼結
体厚さを減らすと(1)焼結体の機械的強度が低下する
〔2)雷サージ、開閉サージなどのサージェネルギの吸
収能力(サージ耐量)は焼結体の体積に比例するのでサ
ージ耐量特性が低下するなどの問題があった。
For example, when applying a ZnO varistor to a DC 12V circuit, a varistor voltage of 22V is generally used in consideration of circuit voltage fluctuations, but as mentioned above, the varistor voltage per grain boundary layer is approximately 2V. Therefore, there are 11 layers of grain boundaries between the opposing electrodes of this element.
However, due to the above-mentioned electrode/ZnO sintered body interface barrier, the varistor voltage of the grain boundaries of the ZnO sintered body and the electrode/
The total varistor voltage at the sintered body interface must be 22V. Therefore, in reality, as the varistor voltage decreases, the difference between the varistor voltage determined from the number of sintered bodies and the actually measured varistor voltage increases, so the number of grain boundaries in the sintered body must be reduced. If the thickness of the sintered body is necessarily reduced, (1) the mechanical strength of the sintered body will decrease [2] The ability to absorb surge energy (surge resistance) such as lightning surges and switching surges will depend on the volume of the sintered body. Since the ratio is proportional, there were problems such as a decrease in surge resistance characteristics.

また、電極/焼結体界面のショットキー障壁は、ZnO
焼結体自身の粒界に存在するショットキー障壁に比ベサ
ージ耐量が低いので、バリスタ電圧が低くなるほどサー
ジによるバリスタ電圧の変化量が大きくなるという欠点
があり、さらに電極/焼結体界面に形成されるショット
キー障壁は、組立て工程例えばハンダ付工程、樹脂モー
ルド工程で変動しやすくバリスタ電圧の工程管理が困難
になるという問題があった。
In addition, the Schottky barrier at the electrode/sintered body interface is
The Schottky barrier existing at the grain boundaries of the sintered body itself has a low relative Vesage resistance, so the lower the varistor voltage is, the greater the change in varistor voltage due to surges becomes. The problem with the Schottky barrier is that it tends to fluctuate during the assembly process, such as the soldering process and the resin molding process, making process control of the varistor voltage difficult.

この発明は」―述の点に鑑みてなされたものでその目的
は焼結体と金属電極間のショットキー障壁をなくすこと
により、機械的強度、サージ耐量に優れ、工程管理も容
易な低電圧用電圧非直線抵抗素子を提供することにある
This invention was made in view of the above points, and its purpose is to eliminate the Schottky barrier between the sintered body and the metal electrode, thereby achieving a low voltage with excellent mechanical strength and surge resistance, and easy process control. An object of the present invention is to provide a voltage non-linear resistance element for use.

〔課題を解決するための手段〕[Means to solve the problem]

上述の目的はこの発明によれば、酸化亜鉛の粉末と電圧
非直線性を生じさせる微量の添加物粉末とを混合し焼成
した焼結体の電極を設ける面にレーザ光を照射して表面
の熱処理をし、その後電極を形成するものとする。
According to the present invention, the above-mentioned object is achieved by irradiating the surface of the sintered body, which is made by mixing zinc oxide powder and a small amount of additive powder that causes voltage nonlinearity and firing it, with a laser beam on the surface on which the electrode is to be provided. Heat treatment is performed, and then electrodes are formed.

〔作用〕[Effect]

酸化亜鉛はη型の半導体であり、ドナーは酸素空孔によ
り形成される。したがって、電極を設ける面を予めレー
ザ光の照射により、加熱・急冷することにより、数面の
表面層に酸素空孔が形成され、このため低抵抗な領域が
できる。酸素空孔は大気中でも形成されるが、好ましく
は中性ガス中、あるいは真空中がよい。
Zinc oxide is an η-type semiconductor, and donors are formed by oxygen vacancies. Therefore, by heating and rapidly cooling the surface on which the electrode is to be provided by irradiation with laser light in advance, oxygen vacancies are formed in the surface layer of several surfaces, thereby creating a low resistance region. Although oxygen vacancies are formed in the atmosphere, they are preferably formed in a neutral gas or in a vacuum.

上記低抵抗な層により、焼結体/電極界面に形成される
はずのショットキー障壁は消滅する。
Due to the low resistance layer, the Schottky barrier that would be formed at the sintered body/electrode interface disappears.

〔実施例〕〔Example〕

次に本発明の実施例を図面に基づいて説明する。 Next, embodiments of the present invention will be described based on the drawings.

第2図にこの発明の実施例に係る抵抗素子の製造工程が
示される。まずZnO粉末にPr、 Co、  Bなど
を酸化物などの化合物の形で適量添加したあと混合、造
粒しZnOバリスタ用造粒粉が調製される。
FIG. 2 shows the manufacturing process of a resistance element according to an embodiment of the present invention. First, appropriate amounts of Pr, Co, B, etc. in the form of compounds such as oxides are added to ZnO powder, and then mixed and granulated to prepare granulated powder for ZnO varistors.

この造粒粉を直径1.7 mmの金型を使用して厚さ1
.25mmの円板状に成形する。次いでこの成形体を酸
化性雰囲気中において1350℃の温度で4h焼成する
。得られた焼結体の大きさは直径14n+m、厚さ1.
0mmであった。
This granulated powder is molded to a thickness of 1 mm using a mold with a diameter of 1.7 mm.
.. Shape into a 25mm disc. Next, this molded body is fired at a temperature of 1350° C. for 4 hours in an oxidizing atmosphere. The size of the obtained sintered body was 14n+m in diameter and 1.2m in thickness.
It was 0 mm.

」1記のようにして作られた焼結体の対向する両主面を
N2ガス中でArレーザにて熱処理した。このとき表面
の温度は、およそ1000℃であった。
Both opposing main surfaces of the sintered body produced as described in 1 above were heat-treated using an Ar laser in N2 gas. At this time, the surface temperature was approximately 1000°C.

レーザにて熱処理をした面の表面抵抗は1mAの電流を
流したときに1にΩ以下であった。無処理のものは20
にΩ以上であった。
The surface resistance of the surface heat-treated with a laser was less than 1Ω when a current of 1 mA was applied. The untreated one is 20
It was more than Ω.

上記処理をした焼結体に銀ペーストを塗布後焼付けてバ
リスタを構成した。第1図に模式断面図が示される。3
は焼結体であり、2A、2Bはレーザにて熱処理した熱
処理層であり、IA、1.8は金属電極である。続いて
パリスフ特性を測定した。さらに組立て後のハリスフ特
性も評価した。
A varistor was constructed by applying silver paste to the sintered body treated as described above and then baking it. A schematic cross-sectional view is shown in FIG. 3
is a sintered body, 2A and 2B are heat-treated layers heat-treated with a laser, and IA and 1.8 are metal electrodes. Subsequently, the parisphere characteristics were measured. Furthermore, the characteristics of the harisph after assembly were also evaluated.

結果が第1表に示される。The results are shown in Table 1.

第  1 表 第2表はサージを加えたときの組立て後におけるサージ
耐量(A)を示しである。ただしサージ耐量は8/20
μs標準電流パルスを素子に2分間隔て2回流した後の
V + m Aの変化率が±lO%となる電流で規定し
た。
Table 1 Table 2 shows the surge resistance (A) after assembly when a surge is applied. However, the surge resistance is 8/20
It was defined as a current at which the rate of change in V + mA after passing a μs standard current pulse through the device twice at 2-minute intervals was ±1O%.

第2表 第1表にはVlffiA、V+□4の変動係数、電流1
00μΔ〜1mA領域における電圧非直線係数αを、電
極づけ後1組立て後について従来法と比較して示した。
Table 2 Table 1 shows VlffiA, coefficient of variation of V+□4, current 1
The voltage nonlinear coefficient α in the 00 μΔ to 1 mA region is shown in comparison with the conventional method after one assembly after electrode attachment.

 さらに参考データとしてZnO焼結体とショットキー
障壁を形成しないIn−Ga電極を用いたときの特性も
併せて示した。この結果から本発明の方法によると電極
づけ後と組立て後の特性変動はなく、従来法に比べ優れ
ていることがわかる。
Further, as reference data, characteristics when using a ZnO sintered body and an In-Ga electrode that does not form a Schottky barrier are also shown. From these results, it can be seen that the method of the present invention has no characteristic variation after electrode attachment and after assembly, and is superior to the conventional method.

第2表から明らかなように、本発明方法の方が優れてい
ることがわかる。この理由は次のように考えられる。即
ち、焼結体そのもののサージ耐量は1.2000△であ
るが、従来の素子では電極/焼結体界面に形成される障
壁がサージにより変化しやずいためV l ff1Aが
20V素子の場合、電極/焼結体界面障壁が2V変化す
ると10%の変化となるからである。このようにバリス
タ電圧が低くなればなるほど従来方法で作製されたZn
Oバリスタ素子のサージ耐量は見掛は上低くなるという
欠点が解消される。
As is clear from Table 2, the method of the present invention is superior. The reason for this is thought to be as follows. That is, the surge resistance of the sintered body itself is 1.2000Δ, but in the conventional element, the barrier formed at the electrode/sintered body interface is not easily changed by the surge, so in the case of an element where V l ff1A is 20V, This is because a 2V change in the electrode/sintered body interface barrier results in a 10% change. In this way, the lower the varistor voltage, the lower the Zn produced by the conventional method.
This eliminates the drawback that the surge resistance of the O varistor element is apparently low.

なお、上述した実施例ではN2ガス中でのレーザによる
熱処理の方法について述べたが、同様な効果は訂ガス中
、大気中、真空中でも確認された。
In addition, although the above-mentioned example described a method of heat treatment using a laser in N2 gas, similar effects were confirmed in a gaseous atmosphere, in the atmosphere, and in a vacuum.

また実施例では円板状焼結体について示したが本発明の
効果は形状によらず、また対向する電極の場合のみなら
ず二つの電極を同一平面上に設けたときにも確かめられ
る。
Further, although the embodiments have been described with respect to a disk-shaped sintered body, the effects of the present invention are not dependent on the shape, and can be confirmed not only when the electrodes are opposed to each other but also when two electrodes are provided on the same plane.

〔発明の効果〕〔Effect of the invention〕

この発明によれば酸化亜鉛の粉末と電圧非直線性を生じ
させる微量の添加物粉末とを混合し焼成した焼結体の電
極を設ける面にレーザ光を照射して表面の熱処理をする
ことにより、焼結体/電極間に低抵抗層を導入すること
ができ、このため焼結体/電極間のショットキー障壁が
消滅して機械的強度とサージ耐量に優れかつ製造上の工
程管理の容易な電圧非直線抵抗素子が得られる。
According to this invention, by heat-treating the surface of a sintered body made by mixing zinc oxide powder and a small amount of additive powder that causes voltage nonlinearity and irradiating the surface on which the electrode is to be provided with a laser beam. , it is possible to introduce a low resistance layer between the sintered body and the electrode, which eliminates the Schottky barrier between the sintered body and the electrode, resulting in excellent mechanical strength and surge resistance, and easy manufacturing process control. A voltage nonlinear resistance element can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の実施例に係る電圧非直線抵抗素子を
示す模式断面図、第2図はこの発明の実施例に係る抵抗
素子の製造工程を示す流れ図、第3図は従来の素子の製
造工程を示す流れ図である。 1Δ、IB 金属電極、2A、2B  熱処理層、第 図 第 図
FIG. 1 is a schematic cross-sectional view showing a voltage non-linear resistance element according to an embodiment of the present invention, FIG. 2 is a flowchart showing the manufacturing process of a resistance element according to an embodiment of this invention, and FIG. 3 is a diagram of a conventional element. It is a flow chart showing a manufacturing process. 1Δ, IB metal electrode, 2A, 2B heat treatment layer, Fig.

Claims (1)

【特許請求の範囲】[Claims] 1)酸化亜鉛の粉末と電圧非直線性を生じさせる微量の
添加物粉末とを混合し焼成した焼結体の電極を設ける面
にレーザ光を照射して表面の熱処理をし、その後電極を
形成することを特徴とする電圧非直線抵抗素子の製造方
法。
1) Heat-treat the surface by irradiating the surface of the sintered body, which is made by mixing zinc oxide powder and a small amount of additive powder that causes voltage nonlinearity and firing it, with a laser beam to provide the electrode, and then form the electrode. A method of manufacturing a voltage nonlinear resistance element, characterized by:
JP1116804A 1989-05-10 1989-05-10 Manufacture of voltage nonlinear resistance element Pending JPH02296302A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1116804A JPH02296302A (en) 1989-05-10 1989-05-10 Manufacture of voltage nonlinear resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1116804A JPH02296302A (en) 1989-05-10 1989-05-10 Manufacture of voltage nonlinear resistance element

Publications (1)

Publication Number Publication Date
JPH02296302A true JPH02296302A (en) 1990-12-06

Family

ID=14696077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1116804A Pending JPH02296302A (en) 1989-05-10 1989-05-10 Manufacture of voltage nonlinear resistance element

Country Status (1)

Country Link
JP (1) JPH02296302A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051238A (en) 2003-07-21 2005-02-24 Abb Res Ltd Laser irradiated metallized electroceramic

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051238A (en) 2003-07-21 2005-02-24 Abb Res Ltd Laser irradiated metallized electroceramic

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