JPH0229720A - Method for manufacturing encapsulated electrochromic devices - Google Patents
Method for manufacturing encapsulated electrochromic devicesInfo
- Publication number
- JPH0229720A JPH0229720A JP63180657A JP18065788A JPH0229720A JP H0229720 A JPH0229720 A JP H0229720A JP 63180657 A JP63180657 A JP 63180657A JP 18065788 A JP18065788 A JP 18065788A JP H0229720 A JPH0229720 A JP H0229720A
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- Japan
- Prior art keywords
- sealing
- substrate
- sealing resin
- layer
- resin layer
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- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、封止されたエレクトロクロミック素子に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to sealed electrochromic devices.
電圧を印加すると可逆的に電解酸化または還元反応が起
こり可逆的に着色する現象をエレクトロクロミズムと言
う、このような現象を示すエレクトロクロミック(以下
、ECと略称する)物質を用いて、電圧操作により着消
色するEC素子(以下、ECDと称す)を作り、このE
C[lを光量制御素子(例えば、防眩ミラー)や7セグ
メントを利用した数字表示素子に利用しようとする試み
は、20年以上前から行われている。例えば、ガラス基
板の上に透明電極膜(陰極)、二酸化タングステン薄膜
、二酸化ケイ素のような絶縁膜、電極膜(陽橿)を順次
積層してなるECD (特公昭52−46098号参
照)が全固体型ECDとして知られている。Electrochromism is a phenomenon in which a reversible electrolytic oxidation or reduction reaction occurs when a voltage is applied, resulting in reversible coloring. Electrochromic (hereinafter abbreviated as EC) substances that exhibit such a phenomenon are used to produce electrolytic oxidation or reduction reactions by voltage manipulation. Create an EC element (hereinafter referred to as ECD) that changes color and erases color, and
Attempts to utilize C[l in light amount control elements (for example, anti-glare mirrors) and numeric display elements using seven segments have been made for more than 20 years. For example, an ECD (see Japanese Patent Publication No. 52-46098), which is made by sequentially laminating a transparent electrode film (cathode), a tungsten dioxide thin film, an insulating film such as silicon dioxide, and an electrode film (positive electrode) on a glass substrate, It is known as solid-state ECD.
この[ICDに電圧を印加すると二酸化タングステン(
wow) ′gIwAが青色に着色する。その後、この
ECDに逆の電圧を印加すると、−0,薄膜の青色が消
えて無色になる。この着色・消色する機構は詳しくは解
明されていないが、−〇雪薄膜および絶縁膜(イオン導
電層)中に含まれる少量の水分が一〇、の着色・消色を
支配していると理解されている0着色の反応式は下記の
ように推定されている。When voltage is applied to this [ICD, tungsten dioxide (
wow) 'gIwA is colored blue. Thereafter, when a reverse voltage is applied to this ECD, -0, the blue color of the thin film disappears and it becomes colorless. The mechanism of coloring and decoloring has not been elucidated in detail, but it is believed that a small amount of water contained in the snow thin film and the insulating film (ion conductive layer) controls the coloring and decoloring of 10. The understood reaction formula for zero coloring is estimated as follows.
・H,O→ I+”+0H
(−0,膜−陰極側)
(絶縁膜−陽極側)
OR−−!48tO+’A 4(h↑十%eところで、
!IC層を直接又は間接的に挟む一対の電極層は、 E
C層の着消色を外部に見せるために少なくとも一方は透
明でなければならない。特に透過型のECDの場合には
両方とも透明でなければならない、透明な電極材料とし
ては、現在のところ5nOt、InzOz 、ITO(
SnO!とIn103 との混合物)、ZnOなどが知
られているが、これらの材料は比較的透明度が悪いため
に薄くせねばならず、この理由及びその他の理由からE
CDは基板例えばガラス板やプラスチック板の上に形成
するのが普通であり、このようなECDの構造の一例を
第1図に示す。・H, O→ I+"+0H (-0, film-cathode side) (insulating film-anode side) OR--!48tO+'A 4(h↑10%eBy the way,
! A pair of electrode layers that directly or indirectly sandwich the IC layer are E
At least one of the layers must be transparent in order to show the coloring and decoloring of the C layer to the outside. Particularly in the case of a transmission type ECD, both materials must be transparent.Currently, transparent electrode materials include 5nOt, InzOz, and ITO (
SnO! Mixtures of In103 and In103), ZnO, etc. are known, but these materials have relatively poor transparency and must be made thin, and for this and other reasons, E
A CD is usually formed on a substrate such as a glass plate or a plastic plate, and an example of the structure of such an ECD is shown in FIG.
第1図に於いて、(A)は下部透明電極、(B)は下部
透明電極、(E)は還元着色性[IC層(例えば−0,
)、CD)はイオン導電層、(C)は可逆的電解酸化N
(例えば酸化又は水酸化イリジウム)をそれぞれ示し、
基本的にはこの(A)〜(B)の積層構造だけでECD
が構成されるが、前述のとおり、これらのECDは素子
基板(S)上に形成される。(R)はECDの封止樹脂
例えばエポキシ樹脂であり、(G)は保護用の封止基板
である。In FIG. 1, (A) is the lower transparent electrode, (B) is the lower transparent electrode, and (E) is the reduction coloring [IC layer (e.g. -0,
), CD) is an ion conductive layer, (C) is a reversible electrolytically oxidized N
(e.g. iridium oxide or hydroxide), respectively;
Basically, ECD can be achieved with just the laminated structure of (A) and (B).
As described above, these ECDs are formed on the element substrate (S). (R) is a sealing resin for the ECD, such as an epoxy resin, and (G) is a protective sealing substrate.
従来、透過型ECDでは外観が悪い、信頼性が悪いと言
う問題点、反射型ECDでは、信頼性が悪いという問題
点があった。Conventionally, transmission type ECDs have had problems of poor appearance and reliability, and reflection type ECDs have had problems of poor reliability.
本発明の目的は、ECDの外観及び信軽性向上を図るこ
とにある。An object of the present invention is to improve the appearance and reliability of an ECD.
前記問題点を解決する為に、鋭意研究の結果、封止樹脂
は粘度が高いために混合撹拌する際に微細な気泡を巻き
込み易く、また、封止作業の際に封止樹脂層に気泡が巻
き込まれ易く、封止されたECDの封止樹脂層に混入さ
れた微細な気泡が、前記問題点の原因であることを突き
止め、気泡混入のない封止樹脂層を形成させれば、問題
が解決されるごとを見出し、本発明を成すに至った。In order to solve the above problems, as a result of intensive research, we found that the sealing resin has a high viscosity, so it is easy to entrain fine air bubbles when mixing and stirring, and that air bubbles are formed in the sealing resin layer during the sealing process. If we find out that the cause of the problem is microscopic air bubbles that are easily caught and mixed into the sealing resin layer of the sealed ECD, and form a bubble-free sealing resin layer, the problem can be solved. The inventors have found a solution to the problem and have come up with the present invention.
従って、本発明は、素子基板、その上に形成されたエレ
クトロクロミンク素子、その上に塗布された封止樹脂層
、及びその上に接合された封止基板からなる封止された
エレクトロクロミック素子に於いて、
前記封止樹脂層が気泡を含まないものであることを特徴
とするエレクトロクロミック素子を提供する。Therefore, the present invention provides a sealed electrochromic device comprising an device substrate, an electrochromic device formed thereon, a sealing resin layer applied thereon, and a sealing substrate bonded thereon. The present invention provides an electrochromic device, characterized in that the sealing resin layer does not contain bubbles.
封止作業の際に気泡が混入しないようにするには、次の
ような方法が好ましい。In order to prevent air bubbles from being mixed in during the sealing operation, the following method is preferable.
方法1:封止基板上に、封止樹脂を円形状又は細帯状に
塗布した後、封止基板をすばやく逆転させて、予めEC
Dの形成された素子基板面に封止樹脂を点又は直線状に
接触させて、その後、封止基板を素子基板上にゆっくり
と載置し、次いで封止梼脂を硬化又は固化させる。Method 1: After applying the sealing resin in a circular or strip shape onto the sealing substrate, quickly reverse the sealing substrate and apply EC in advance.
The sealing resin is brought into point or linear contact with the element substrate surface on which D is formed, and then the sealing substrate is slowly placed on the element substrate, and then the sealing resin is cured or solidified.
方法2=予めECDの形成された素子基板上に封止樹脂
を円形状又は細帯状に塗布した後、素子基板をすばやく
逆転させて、封止基板面に封止樹脂を点又は直線状に接
触させて、その後、素子基板を封止基板上にゆっくりと
載置し、次いで封止樹脂を硬化又は固化させる。Method 2 = After applying the sealing resin in a circular or strip shape onto the element substrate on which the ECD has been formed in advance, the element substrate is quickly reversed and the sealing resin is brought into contact with the sealing substrate surface in a dot or straight line. After that, the element substrate is slowly placed on the sealing substrate, and then the sealing resin is cured or solidified.
本発明に於けるECDの積層構造は、特にどれと限定さ
れるものではないが、固体型[ICDの構造としては、
例えば■電極層/EC層/イオン導電層/電極層のよう
な4層構造−〇電極層/還元着色型EC1i/イオン導
11Fi/可逆的電解酸化層/iit掻層のような5層
構造があげられる。The laminated structure of the ECD in the present invention is not particularly limited, but the structure of the solid type [ICD is as follows:
For example, ■4-layer structure such as ■ electrode layer / EC layer / ion conductive layer / electrode layer - 〇 5-layer structure such as electrode layer / reduction colored EC1i / ion conductive 11Fi / reversible electrolytic oxidation layer / IIT layer can give.
透明電極の材料としては、例えば、SnO□、ln=0
3 、ITOなどが使用される。このような電極層は、
一般には真空蒸着、イオンブレーティング、スパッタリ
ングなどの真空薄膜形成技術で形成される。(還元着色
性) ECl1としては一般に罰3、Mo5sなどが使
用される。As the material of the transparent electrode, for example, SnO□, ln=0
3. ITO etc. are used. Such an electrode layer is
Generally, it is formed using vacuum thin film forming techniques such as vacuum evaporation, ion blating, and sputtering. (Reduction coloring property) As ECl1, generally used is 3, Mo5s, etc.
イオン導電層としては、例えば酸化ケイ素、酸化タンタ
ル、酸化チタン、酸化アルミニウム、酸化ニオブ、酸化
ジルコニウム、酸化ハフニウム、酸化ランタン、フッ化
マグネシウムなどが使用される、これらの物質薄膜は製
造方法により電子に対して絶縁体であるが、プロトン、
(H”)およびヒドロキシイオン(O「)に対しては良
導体となる。 EC層の着色消色反応にはカチオンが必
要とされ、H9イオンやLi0イオンをEC層その他に
含有させる必要がある l(4イオンは初めからイオン
である必要はなく、電圧が印加されたときにH′″イオ
ンが生じればよく、従ってH4イオンの代わりに水を含
有させてもよい、この水は非常に少なくて十分であり、
しばしば、大気中から自然に侵入する水分でも着消色す
る。For example, silicon oxide, tantalum oxide, titanium oxide, aluminum oxide, niobium oxide, zirconium oxide, hafnium oxide, lanthanum oxide, magnesium fluoride, etc. are used as the ion-conducting layer. On the other hand, it is an insulator, but protons,
(H") and hydroxy ions (O"). Cations are required for the coloring and decoloring reaction of the EC layer, and it is necessary to include H9 ions and Li0 ions in the EC layer and other parts. (The 4 ions do not need to be ions from the beginning; it is sufficient that H''' ions are generated when a voltage is applied. Therefore, water may be contained instead of H4 ions. This water is very small. is sufficient,
Frequently, moisture that naturally enters from the atmosphere also discolors and fades.
EC層とイオン導電層とは、どちらを上にしても下にし
てもよい、さらにEC層に対して間にイオン導電層を挟
んで(場合により酸化着色性IIC層ともなる)可逆的
電解酸化層ないし触媒層を配設してもよい。このような
層としては、例えば酸化ないし水酸化シリジウム、同じ
(ニッケル、同じくクロム、同じくバナジウム、同じく
ルテニウム、同じくロジウムなどがあげられる。これら
の物質は、イオン導電層又は透明電極中に分散されても
良いし、それらを分散してもよい、不透明な電極層は、
反射層と兼用していてもよく、例えば金、銀、アルミニ
ウム、クロム、スズ、亜鉛、ニッケル、ルテニウム、ロ
ジウム、ステンレスなどの金属が使用される。The EC layer and the ion conductive layer may be placed either on top or on the bottom, and the EC layer is sandwiched between the ion conductive layer (which may also be an oxidation-colored IIC layer) and subjected to reversible electrolytic oxidation. A layer or catalyst layer may also be provided. Such layers include, for example, silidium oxide or hydroxide, nickel, chromium, vanadium, ruthenium, rhodium, etc. These substances are dispersed in an ion-conducting layer or a transparent electrode. The opaque electrode layer can be
It may also serve as a reflective layer, and metals such as gold, silver, aluminum, chromium, tin, zinc, nickel, ruthenium, rhodium, and stainless steel are used.
〔実施例1〕
矩形のガラス製素子基板(S)の表面全体にITO電極
層を形成し、次にフォトエツチング又はレーザーカッテ
ィングにより上部電極(A)用の取出し部(F)と下部
電極(B)との間に溝を形成した。これにより取出し部
(F)と、それより隔離した矩形の下部電極(B)を形
成した。尚、ITOをマスク蒸着することにより直接に
これらのパターンを形成してもよい0次に酸化イリジウ
ムと酸化スズとの混合物からなる可逆的電解酸化層(C
)、酸化タンタル層(D)及び酸化タングステン層(E
)を順に形成した。最後に上部電極(A)としてITO
を蒸着してECDを作製した。この時ITOは既に基板
(S)上に形成された取出し部(F)と一端が接触する
ように形成した。[Example 1] An ITO electrode layer was formed on the entire surface of a rectangular glass element substrate (S), and then an extraction part (F) for the upper electrode (A) and a lower electrode (B) were formed by photoetching or laser cutting. ) formed a groove between them. As a result, a take-out portion (F) and a rectangular lower electrode (B) isolated from the take-out portion (F) were formed. Note that these patterns may be directly formed by mask vapor deposition of ITO.A reversible electrolytic oxidation layer (C
), tantalum oxide layer (D) and tungsten oxide layer (E
) were formed in sequence. Finally, ITO is used as the upper electrode (A).
An ECD was produced by vapor-depositing. At this time, the ITO was formed so that one end was in contact with the extraction part (F) already formed on the substrate (S).
一方、封止治具(I)を用意しこの上に素子基板(S)
を乗せておく、そして封止基板(G)上にエポキシ樹脂
からなる液状の封止樹脂(R)を円形状(第3a図参照
)又は細帯状(第3b図参照)に塗布した後、封止基板
をすばやく逆転させて(第4a図参照)、素子基板(S
)面に、封止樹脂を点(第4b図参照)又は直線状に接
触させて、その後、封止基板を素子基板上にゆっくりと
載置して(第4c図)、素子面全体に樹脂を覆わせた(
第4d図参照)。On the other hand, prepare a sealing jig (I) and place the element substrate (S) on it.
Then, after applying liquid sealing resin (R) made of epoxy resin on the sealing substrate (G) in a circular shape (see Figure 3a) or strip shape (see Figure 3b), seal it. Quickly reverse the stop substrate (see Figure 4a) and place the element substrate (S
) surface, contact the sealing resin at a point (see Figure 4b) or in a straight line, then slowly place the sealing substrate on the element substrate (Figure 4c), and apply the resin to the entire element surface. covered (
(See Figure 4d).
やがて、封止樹脂は常温で又はやや加熱下で放置すれば
硬化するので、硬化を確認した後、治具からとりはずし
て、上部電極及び下部電極の取出し部に各々、外部配線
LA 、L、をボンディングすると本実施例のECDが
出来上がる。このECDに駆動電源(Su)から着色電
圧(+1.35V)を印加するとECDに入射させた波
長633n+*の光に対して透過率は20%に減少しく
10秒後)、この透過率は電圧印加を止めても、しばら
く保たれた。今度は消色電圧(−1,35V)を印加す
ると同じく透過率は70%に回復した。(10秒後)こ
のECDは透過光量を電気的に制御し得る調光ガラスと
して有用である。Eventually, the sealing resin will harden if left at room temperature or slightly heated, so after confirming that it has hardened, remove it from the jig and connect the external wiring LA, L to the lead-out portions of the upper and lower electrodes, respectively. After bonding, the ECD of this example is completed. When a coloring voltage (+1.35V) is applied to this ECD from the drive power supply (Su), the transmittance for light with a wavelength of 633n+* that is incident on the ECD decreases to 20% (after 10 seconds), and this transmittance is Even after the application was stopped, it was maintained for a while. This time, when a decoloring voltage (-1.35 V) was applied, the transmittance recovered to 70%. (After 10 seconds) This ECD is useful as a light control glass that can electrically control the amount of transmitted light.
〔実施例2〕
矩形のガラス製素子基板(S)の表面全体にITO電極
層を形成し、次にフォトエツチング又はレーザーカッテ
ィングにより上部電極(A)用の取出し部(F)と下部
電極(B)との間に溝を形成した。これにより取出し部
CF)と、それより隔離した矩形の下部電極(B)を形
成した。尚、ITOをマスク蒸着することにより直接に
これらのパターンを形成してもよい0次に酸化イリジウ
ムと酸化スズとの混合物からなる可逆的電解酸化層(C
)、酸化タンタル11 (D)及び酸化タングステン層
(E)を順に形成した。I!に後に下部電極(A)とし
てITOを蒸着してllCDを作製した。この時ITO
は既に基板(S)上に形成された取出し部(F)と一端
が接触するように形成した。[Example 2] An ITO electrode layer was formed on the entire surface of a rectangular glass element substrate (S), and then an extraction part (F) for the upper electrode (A) and a lower electrode (B) were formed by photoetching or laser cutting. ) formed a groove between them. As a result, a take-out portion CF) and a rectangular lower electrode (B) isolated from the take-out portion CF were formed. Note that these patterns may be directly formed by mask vapor deposition of ITO.A reversible electrolytic oxidation layer (C
), tantalum oxide 11 (D), and tungsten oxide layer (E) were formed in this order. I! After that, ITO was deposited as a lower electrode (A) to fabricate an 11CD. At this time ITO
was formed so that one end was in contact with the take-out portion (F) already formed on the substrate (S).
ここで断面がコの字型のリン青銅製の導電性クリップ(
H)を2本用意し、これに各々、外部配a (LA)又
は(Ll)をハンダ付は又は導電性接着剤にて接続した
。このクリップ(H)2本を素子基板(S)の電極とり
出し部に各々装着し、これによりクリップ(H)が上部
、下部各電極の取出し部を圧着するようにした。Here, a conductive clip made of phosphor bronze with a U-shaped cross section (
Two H) were prepared, and external wiring a (LA) or (Ll) was connected to each with solder or conductive adhesive. The two clips (H) were attached to the electrode lead-out portions of the element substrate (S), so that the clips (H) crimped the upper and lower electrode lead-out portions.
尚、この導電性クリップ(H)の形状及び寸法は、封止
基板(G)の位置決めとECr1周辺の非表示部のマス
キングができるように設定した。The shape and dimensions of the conductive clip (H) were set so that the sealing substrate (G) could be positioned and the non-display area around the ECr1 could be masked.
一方、封止治具(r)を用意し、この上に素子基板(S
)より小さめな矩形のガラス製封止基板(G)を乗せて
おく。そして素子基板(S)上にエポキシ樹脂からなる
液状の封止樹脂(R)を円形状又は細帯状に塗布した後
素子基板をすばやく逆転させて封止基板(G)面に封止
樹脂を点又は直線状に接触させて、その後、素子基板を
封止基板上にゆっくりと載置して、素子面全体に樹脂を
覆わせた。やがて封止樹脂は常温で又はやや加熱下で放
置すれば硬化するので硬化をTi1認した後、治具から
とりはずすと本実施例のECD (第2図参照)が得
られた。On the other hand, a sealing jig (r) is prepared, and an element substrate (S
) Place a smaller rectangular glass sealing substrate (G). Then, after applying a liquid sealing resin (R) made of epoxy resin in a circular or narrow strip shape onto the element substrate (S), the element substrate is quickly reversed and the sealing resin is dotted on the surface of the sealing substrate (G). Alternatively, the element substrate was brought into linear contact, and then the element substrate was slowly placed on the sealing substrate to cover the entire element surface with the resin. The sealing resin will eventually harden if left at room temperature or slightly heated, so after confirming the hardening, it was removed from the jig and the ECD of this example (see FIG. 2) was obtained.
尚、封止治具はテフロン又はシリコンゴム製にすると封
止樹脂が硬化後に付着しないので都合が良い。Note that it is convenient if the sealing jig is made of Teflon or silicone rubber, since the sealing resin will not stick to the jig after hardening.
このECDに、駆動電源(Su)から着色電圧(+1.
35V)を付加するとECU +□から入射させた波長
633■の光に対して透過率は20%に減少しく10秒
後)、この透過率は電圧印加を止めても、しばらく保た
れた。今度は消色電圧(−1,35V)を印加すると同
じく透過率は70%に回復した。 (10秒後)〔発
明の効果〕
以上の通り、本発明によれば、封止樹脂として気泡を含
まないものを使用したので透過型EC[1に於いては外
観、信転性の良好な素子が得られ、また反射型ECDで
は信頼性良好な素子が得られる。A coloring voltage (+1.
When a voltage of 35 V) was applied, the transmittance for light with a wavelength of 633 cm incident from the ECU +□ decreased to 20% (after 10 seconds), and this transmittance was maintained for a while even after the voltage application was stopped. This time, when a decoloring voltage (-1.35 V) was applied, the transmittance recovered to 70%. (After 10 seconds) [Effects of the Invention] As described above, according to the present invention, since a sealing resin that does not contain air bubbles is used, the transmission type EC [1] has good appearance and reliability. A device can be obtained, and a highly reliable device can be obtained in the case of a reflective ECD.
第1図は、ECDの一例を示す概略垂直断面図である。
第2図は、本発明の実施例2にかかるECDの概略垂直
断面図である。
第3a図及び第3b図は、実施例1における封止樹脂の
塗布形状を示す概略平面図である。
第4a図〜第4d図は、実施例1における封止工程を示
す概略垂直断面図である。
第5a図〜第5C図は、従来の封止工程を示す概略垂直
断面図である。
第1 図
〔主要部分の符号の説明〕
ECD・・・エレクトロクロミックS子S・・・・・・
素子基板
G・・・・・・封止基板
R・・・・・・封止樹脂
H・・・・・・導電性クリップ
■・・・・・・封止治具
晃2図
勧R間
躬3し図FIG. 1 is a schematic vertical sectional view showing an example of an ECD. FIG. 2 is a schematic vertical sectional view of an ECD according to a second embodiment of the present invention. 3a and 3b are schematic plan views showing the applied shape of the sealing resin in Example 1. FIG. 4a to 4d are schematic vertical cross-sectional views showing the sealing process in Example 1. FIG. Figures 5a to 5c are schematic vertical sectional views showing a conventional sealing process. Fig. 1 [Explanation of symbols of main parts] ECD... Electrochromic S child S...
Element substrate G...Sealing substrate R...Sealing resin H...Conductive clip ■...Sealing jig 3rd figure
Claims (1)
子、その上に塗布された封止樹脂層、及びその上に接合
された封止基板からなる封止されたエレクトロクロミッ
ク素子に於いて、前記封止樹脂層が気泡を含まないもの
であることを特徴とするエレクトロクロミック素子。In a sealed electrochromic element comprising an element substrate, an electrochromic element formed thereon, a sealing resin layer applied thereon, and a sealing substrate bonded thereon, the sealing An electrochromic element characterized in that the resin layer does not contain air bubbles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63180657A JP2722505B2 (en) | 1988-07-20 | 1988-07-20 | Method for manufacturing sealed electrochromic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63180657A JP2722505B2 (en) | 1988-07-20 | 1988-07-20 | Method for manufacturing sealed electrochromic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0229720A true JPH0229720A (en) | 1990-01-31 |
| JP2722505B2 JP2722505B2 (en) | 1998-03-04 |
Family
ID=16087033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63180657A Expired - Lifetime JP2722505B2 (en) | 1988-07-20 | 1988-07-20 | Method for manufacturing sealed electrochromic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2722505B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6343127U (en) * | 1986-09-08 | 1988-03-23 |
-
1988
- 1988-07-20 JP JP63180657A patent/JP2722505B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6343127U (en) * | 1986-09-08 | 1988-03-23 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2722505B2 (en) | 1998-03-04 |
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