JPH02302016A - Manufacture of tantalum thin-film capacitor - Google Patents
Manufacture of tantalum thin-film capacitorInfo
- Publication number
- JPH02302016A JPH02302016A JP12372189A JP12372189A JPH02302016A JP H02302016 A JPH02302016 A JP H02302016A JP 12372189 A JP12372189 A JP 12372189A JP 12372189 A JP12372189 A JP 12372189A JP H02302016 A JPH02302016 A JP H02302016A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- tantalum thin
- alphata
- executed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 32
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 29
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 239000003990 capacitor Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000010408 film Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000004544 sputter deposition Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000007743 anodising Methods 0.000 claims description 4
- 239000003929 acidic solution Substances 0.000 claims description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 5
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 239000000919 ceramic Substances 0.000 abstract description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract description 2
- 229910001120 nichrome Inorganic materials 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はタンタル薄膜コンデンサの製造方法に関し、特
に混成集積回路の肩品質で信頼性のあるタンタル薄膜コ
ンデンサの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing tantalum thin film capacitors, and more particularly to a method for manufacturing tantalum thin film capacitors with high quality and reliability in hybrid integrated circuits.
従来のタンタル薄膜コンデンサの製造方法は、第２図（
ａ）〜（ｄ）に示すように、絶縁基板１１上に一定出力
で形成したタンタル系薄膜１２を所望のパターンにフォ
トレジスト及びエツチング処理で形成した後、そのパタ
ーンのコンデンサとなるべき部分を酸性溶液中で一定電
圧で陽極酸化し、Ｔａ２Ｏ５膜に変換し、次に良導電性
金属からなる対向電極パターン１５を形成し、最終的に
２５０℃の大気中で５時間の熱処理を施していた。The conventional manufacturing method for tantalum thin film capacitors is shown in Figure 2 (
As shown in a) to (d), a tantalum-based thin film 12 formed at a constant output on an insulating substrate 11 is formed into a desired pattern by photoresist and etching treatment, and then the portion of the pattern that is to become a capacitor is acidified. It was anodized in a solution at a constant voltage to convert it into a Ta2O5 film, then a counter electrode pattern 15 made of a highly conductive metal was formed, and finally a heat treatment was performed in the atmosphere at 250° C. for 5 hours.
上述した従来の製造方法では、絶縁基板上にタンタル系
薄膜を一定出力で形成していた為、そのタンタル系薄膜
を陽極酸化して製造したタンタル薄膜コンデンサの耐熱
性の向上を図ることは困難であった。In the conventional manufacturing method described above, a tantalum thin film is formed on an insulating substrate at a constant output, so it is difficult to improve the heat resistance of tantalum thin film capacitors manufactured by anodizing the tantalum thin film. there were.
本発明の目的は、従来のタンタル薄膜コンデンサの耐熱
性を更に向上することが可能となり、同時に容量密度の
増加も得られるタンタル薄膜コンデンサの製造方法を提
供することにある。An object of the present invention is to provide a method for manufacturing a tantalum thin film capacitor, which makes it possible to further improve the heat resistance of conventional tantalum thin film capacitors, and at the same time increase the capacitance density.
本発明のタンタル薄膜コンデンサの製造方法は、絶縁基
板上に形成したタンタル系薄膜を所望のパターンに形成
する工程と、前記パターンの一部を酸性溶液中で＠極酸
化しＴａ２Ｏ５膜に変換する工程と、更に対向電極パタ
ーンを形成する工程とを有するタンタル薄膜コンデンサ
の製造方法において、前記タンタル薄膜を高スパッタ出
力と低スパッタ出力で形成し、タンタル薄膜の２層膜を
形成する工程と、前記低スパッタ出力で形成されたタン
タル薄膜層を陽極酸化する工程とを有することを特徴と
して構成される。The method for manufacturing a tantalum thin film capacitor of the present invention includes a step of forming a tantalum-based thin film formed on an insulating substrate into a desired pattern, and a step of converting a part of the pattern into a Ta2O5 film by @polar oxidation in an acidic solution. and further forming a counter electrode pattern. The method is characterized by comprising a step of anodizing the tantalum thin film layer formed by sputtering.
次に、本発明について図面を参照して説明する。第１図
（ａ） ５（ｄ）は本発明の一実施例を説明するために
工程順に示したタンタル薄膜コンデンサの断面図である
。第２図は従来のタンタル薄膜コンデンサの製造方法を
示す断面図であり、第３図は本発明と従来のタンタル薄
膜コンデンサの耐熱特性を示すものである。Next, the present invention will be explained with reference to the drawings. FIGS. 1(a) and 5(d) are cross-sectional views of a tantalum thin film capacitor shown in the order of steps to explain an embodiment of the present invention. FIG. 2 is a cross-sectional view showing a conventional tantalum thin film capacitor manufacturing method, and FIG. 3 shows the heat resistance characteristics of the present invention and the conventional tantalum thin film capacitor.
まず、第１図（ａ）に示すように、セラミック又はガラ
ス等の絶縁基板１にマグネトロンスパッタでまずスパッ
ター出力３に７でαＴａ膜２を約３０００人形成し、続
いて出力ｏ、２ＫＷでαＴａ膜３を約１０００人形成す
る。次に、第１図（ｂ）に示すように公知のフォトレジ
スト及びエツチング処理によりαＴａＴａ膜３を所望の
パターンに形成する。次に、第１図（ｃ）に示すように
、ポジ型フォトレジストを１４μ塗布し、１００℃３０
分間のプリベークを施し、露光現像した後、そのポジ型
レジストの密着性を向上させるために１１０℃、３０分
のボストベークを行い所望するレジストパターンを形成
し、露出部ａＴａ面を０．０１％クエン酸溶液中で電圧
１００■一定電圧で２時間陽極酸化を施し、Ｔａ２Ｏ５
膜４に変換し、次いでレジストパターンは公知のレジス
ト剥離処理で除去する。次に、第１図（ｄ）に示すよう
に、前記基板上にマグネトロンスパッタによりＮｉＣｒ
−Ｐｄ−Ａｕ構成膜５を形成し、フォトレジスト及びエ
ツチング処理により対向電極パターンを形成する。First, as shown in FIG. 1(a), approximately 3,000 αTa films 2 are formed on an insulating substrate 1 made of ceramic or glass by magnetron sputtering at a sputter output of 3 to 7, and then an αTa film 2 is formed at an output of o and 2 KW. Approximately 1,000 people form the membrane 3. Next, as shown in FIG. 1(b), the αTaTa film 3 is formed into a desired pattern using a known photoresist and etching process. Next, as shown in Figure 1(c), 14μ of positive photoresist was applied and
After pre-baking for 1 minute and exposing and developing, post-baking was performed at 110°C for 30 minutes to improve the adhesion of the positive resist to form the desired resist pattern. Anodic oxidation was performed in an acid solution at a constant voltage of 100 cm for 2 hours to obtain Ta2O5.
After converting into a film 4, the resist pattern is removed by a known resist stripping process. Next, as shown in FIG. 1(d), NiCr is deposited on the substrate by magnetron sputtering.
-A Pd-Au constituent film 5 is formed, and a counter electrode pattern is formed by photoresist and etching treatment.
最後にコンデンサの安定化を目的に２５０℃大気中で５
時間の熱処理を施し、タンタル薄膜コンデンサを完成す
る。Finally, for the purpose of stabilizing the capacitor, it was
After several hours of heat treatment, the tantalum thin film capacitor is completed.
以上説明したように本発明は、αＴａ膜をマグネトロン
スパッタで形成する際下部パターンとなるαＴａ膜に対
しＴａ２Ｏ膜に変換するαＴａ膜のスパッタ出力を低げ
αＴａ膜の結晶構造をち密にすることでＴａ２Ｏ５膜が
安定し、しかも低山カスバッタのためＴａ膜中のＮ２含
量が増すため第３図に示すように、従来の薄膜コンデン
サに対し耐熱性が向上する。As explained above, the present invention reduces the sputtering power of the αTa film which becomes the lower pattern when forming the αTa film by magnetron sputtering and converts it into a Ta2O film, thereby making the crystal structure of the αTa film denser. The Ta2O5 film is stable, and the N2 content in the Ta film increases due to the low-mountain scattering, so as shown in FIG. 3, the heat resistance is improved compared to the conventional thin film capacitor.
又、前記した如（αＴａ膜がち密なため、０゜０１％ク
エン酸溶液で陽極酸化でのＴａ２Ｏ５形成速度が遅くな
り従来の薄膜コンデンサより容量密度は７％増加するタ
ンタル薄膜コンデンサの製造が可能となる。In addition, as mentioned above (because the αTa film is dense, the rate of Ta2O5 formation during anodization with a 0.01% citric acid solution is slowed down, making it possible to manufacture tantalum thin film capacitors with a capacitance density 7% higher than that of conventional thin film capacitors). becomes.
図面の簡単な説明
第１図（ａ）〜（ｄ）は本発明の一実施例を説明するた
めに工程順に示したタンタル薄膜コンデンサの断面図、
第２図は従来のタンタル薄膜コンデンサの製造方法を説
明するための工程断面図、第３図は本発明と従来の薄膜
コンデンサの耐熱性特性の比較図である。BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1(a) to 1(d) are cross-sectional views of a tantalum thin film capacitor shown in the order of steps to explain an embodiment of the present invention;
FIG. 2 is a process cross-sectional view for explaining a conventional method of manufacturing a tantalum thin film capacitor, and FIG. 3 is a comparison diagram of the heat resistance characteristics of the present invention and a conventional thin film capacitor.
１．１１・・・絶縁基板、２．１２・・・斎出カスバッ
タのＴａ膜、３・・・低山カスバッタのＴａ膜、４゜１
４＝−Ｔａ２Ｏ５膜、！５−Ｎ ｉ Ｃｒ −Ｐｄ −
Ａｕ構成膜。1.11... Insulating substrate, 2.12... Ta film of Suide Kasbatta, 3... Ta film of low mountain Kasbatta, 4゜1
4=-Ta2O5 film,! 5-NiCr-Pd-
Au composition film.
Claims (1)
に形成する工程と、前記パターンの一部を酸性溶液中で
陽極酸化しＴａ＿２Ｏ＿５膜に変換する工程と、更に対
向電極パターンを形成する工程とを有するタンタル薄膜
コンデンサの製造方法において、前記タンタル薄膜を高
スパッタ出力と低スパッタ出力で形成しタンタル薄膜の
２層膜を形成する工程と、前記低スパッタ出力で形成さ
れたタンタル薄膜層を陽極酸化する工程とを有すること
を特徴とするタンタル薄膜コンデンサの製造方法。A step of forming a tantalum-based thin film formed on an insulating substrate into a desired pattern, a step of anodizing a part of the pattern in an acidic solution to convert it into a Ta_2O_5 film, and a step of further forming a counter electrode pattern. A method for manufacturing a tantalum thin film capacitor comprising the steps of forming the tantalum thin film at high sputtering power and low sputtering power to form a two-layer tantalum thin film, and anodizing the tantalum thin film layer formed at the low sputtering power. A method for manufacturing a tantalum thin film capacitor, comprising the steps of:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12372189A JPH02302016A (en) | 1989-05-16 | 1989-05-16 | Manufacture of tantalum thin-film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12372189A JPH02302016A (en) | 1989-05-16 | 1989-05-16 | Manufacture of tantalum thin-film capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02302016A true JPH02302016A (en) | 1990-12-14 |
Family
ID=14867720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12372189A Pending JPH02302016A (en) | 1989-05-16 | 1989-05-16 | Manufacture of tantalum thin-film capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02302016A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104319097A (en) * | 2014-04-01 | 2015-01-28 | 扬州日精电子有限公司 | Manufacturing method of metallized film capacitor |
-
1989
- 1989-05-16 JP JP12372189A patent/JPH02302016A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104319097A (en) * | 2014-04-01 | 2015-01-28 | 扬州日精电子有限公司 | Manufacturing method of metallized film capacitor |
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