JPH02302060A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH02302060A
JPH02302060A JP12350289A JP12350289A JPH02302060A JP H02302060 A JPH02302060 A JP H02302060A JP 12350289 A JP12350289 A JP 12350289A JP 12350289 A JP12350289 A JP 12350289A JP H02302060 A JPH02302060 A JP H02302060A
Authority
JP
Japan
Prior art keywords
cap
light
transmitting window
long sides
interval
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12350289A
Other languages
Japanese (ja)
Inventor
Yoshitoku Kawahara
川原 良徳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP12350289A priority Critical patent/JPH02302060A/en
Publication of JPH02302060A publication Critical patent/JPH02302060A/en
Pending legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To increase a mechanical strength of a cap by a method wherein protruding parts which widen an interval between outer circumferences of a light-transmitting window and long sides of the cap are formed at the two long sides of the cap. CONSTITUTION:A semiconductor chip such as an EPROM is mounted on a base 4 where outer leads 5 have been formed; a cap 1 provided with a light- transmitting window 2 is sealed airtightly with a sealing glass 3. Rounded protruding parts 6 are formed at long sides of the cap 1; an interval l1 between the light-transmitting window 2 and the long sides of the cap 1 is made large. Thereby, a mechanical strength of the cap 1 is increased. In addition, an interval l2 may be increased by forming an angular protruding part 7.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置に関し、特に光透過窓を有する半導
体装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and more particularly to a semiconductor device having a light-transmitting window.

〔従来の技術〕[Conventional technology]

第3図は従来の光透光窓を有する半導体装置の一例の斜
視図である。
FIG. 3 is a perspective view of an example of a conventional semiconductor device having a light-transmitting window.

外部リード5が設けられているベース4にEPROMの
ような半導体チップを搭載し、光透過窓2を有するキャ
ップ1を封止ガラス3で気密封止する。
A semiconductor chip such as an EPROM is mounted on a base 4 provided with external leads 5, and a cap 1 having a light transmission window 2 is hermetically sealed with a sealing glass 3.

集積回路の大規模化に伴い、半導体チップも大きくなる
と、光透過窓2も大きくなってくる。
As the scale of integrated circuits increases and semiconductor chips also become larger, the light transmission window 2 also becomes larger.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述のように、光透過窓2が大きくなると、光透過窓2
の外周とキャップ1の長辺との間隔β3が小さくなり、
キャップの機械的強度が弱くなるという欠点がある。
As mentioned above, when the light transmission window 2 becomes larger, the light transmission window 2 becomes larger.
The distance β3 between the outer periphery of the cap 1 and the long side of the cap 1 becomes smaller,
This has the disadvantage that the mechanical strength of the cap is weakened.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は、光透過窓を有する矩形のキャップを備えた半
導体装置において、前記キャップの二つの長辺側に前記
光透光窓の外周と前記キャップの長辺との間隔を広くす
る凸部を設けたことを特徴とする。
The present invention provides a semiconductor device equipped with a rectangular cap having a light-transmitting window, in which a convex portion is provided on two long sides of the cap to widen the distance between the outer periphery of the light-transmitting window and the long side of the cap. It is characterized by having been established.

〔実施例〕〔Example〕

次に、本発明の実施例について図面を参照して説明する
Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の第1の実施例の斜視図である。FIG. 1 is a perspective view of a first embodiment of the invention.

この実施例ではキャップ1の長辺に丸味を帯びた凸部6
を設け、光透光窓2とキャップ1の長辺との間隔ρ1を
大きくする。これによりキャップ1の機械的強度が大き
くなるという効果が得られる。
In this embodiment, a rounded convex portion 6 is formed on the long side of the cap 1.
, and the distance ρ1 between the light-transmitting window 2 and the long side of the cap 1 is increased. This provides the effect of increasing the mechanical strength of the cap 1.

第2図は本発明の第2の実施例の斜視図である。FIG. 2 is a perspective view of a second embodiment of the invention.

この実施例においては、角形の凸部7を設けて、間隔1
2を大きくしている。
In this embodiment, rectangular convex portions 7 are provided with an interval of 1
2 is increased.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明は、キャップの一部に丸み
のある凸部または角形の凸部を設けて光透過窓外周とキ
ャップの長辺との間隔を大きくしたので、キャップの機
械的強度を増す効果がある。
As explained above, the present invention provides a rounded convex part or a square convex part in a part of the cap to increase the distance between the outer periphery of the light transmission window and the long side of the cap, thereby increasing the mechanical strength of the cap. It has the effect of increasing

図面の簡単な説明 第1図は本発明の第1の実施例の斜視図、第2図は本発
明の第2の実施例の斜視図、第3図は従来の光透過窓を
有する半導体装置の一例の斜視図である。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a first embodiment of the present invention, FIG. 2 is a perspective view of a second embodiment of the present invention, and FIG. 3 is a conventional semiconductor device having a light-transmitting window. It is a perspective view of an example.

1・・・キャップ、2・・・光透過窓、3・・・封止ガ
ラス、4・・・ベース、5・・・外部リード、6.7・
・・凸部。
DESCRIPTION OF SYMBOLS 1... Cap, 2... Light transmission window, 3... Sealing glass, 4... Base, 5... External lead, 6.7.
...Protrusion.

Claims (1)

【特許請求の範囲】[Claims] 光透過窓を有する矩形のキャップを備えた半導体装置に
おいて、前記キャップの二つの長辺側に前記光透光窓の
外周と前記キャップの長辺との間隔を広くする凸部を設
けたことを特徴とする半導体装置。
In a semiconductor device equipped with a rectangular cap having a light-transmitting window, a convex portion is provided on two long sides of the cap to widen the distance between the outer periphery of the light-transmitting window and the long side of the cap. Characteristic semiconductor devices.
JP12350289A 1989-05-16 1989-05-16 Semiconductor device Pending JPH02302060A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12350289A JPH02302060A (en) 1989-05-16 1989-05-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12350289A JPH02302060A (en) 1989-05-16 1989-05-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH02302060A true JPH02302060A (en) 1990-12-14

Family

ID=14862207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12350289A Pending JPH02302060A (en) 1989-05-16 1989-05-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH02302060A (en)

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