JPH02306580A - Manufacture of thin film electroluminescence element - Google Patents
Manufacture of thin film electroluminescence elementInfo
- Publication number
- JPH02306580A JPH02306580A JP1127061A JP12706189A JPH02306580A JP H02306580 A JPH02306580 A JP H02306580A JP 1127061 A JP1127061 A JP 1127061A JP 12706189 A JP12706189 A JP 12706189A JP H02306580 A JPH02306580 A JP H02306580A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- emitting layer
- electrode
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000005401 electroluminescence Methods 0.000 title abstract description 3
- 238000005192 partition Methods 0.000 claims abstract description 29
- 239000010410 layer Substances 0.000 claims description 109
- 238000000034 method Methods 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 11
- 239000011247 coating layer Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 7
- 239000003086 colorant Substances 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 14
- 238000005530 etching Methods 0.000 abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 6
- 239000008188 pellet Substances 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- 238000001039 wet etching Methods 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 238000010894 electron beam technology Methods 0.000 abstract 2
- 229910004481 Ta2O3 Inorganic materials 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 239000005083 Zinc sulfide Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 description 7
- 239000011572 manganese Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- -1 rare earth fluoride Chemical class 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は薄膜エレクトロルミネセンス（ＥＬ）素子の製
造方法に関し、特に異なる発光色を有する複数の発光層
を同一平面上に形成した薄膜ＥＬ素子の製造方法に関す
る。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a method for manufacturing a thin film electroluminescent (EL) device, and particularly to a thin film EL device in which a plurality of light emitting layers having different emission colors are formed on the same plane. Relating to a manufacturing method.
［従来の技術］
電圧の印加によってエレクトロルミネセンス（ＥＬ）発
光する薄膜ＥＬ素子は、平面薄型表示素子として広範な
用途を有し、例えば各種情報端末機器等の表示素子とし
て有効である。[Prior Art] Thin film EL elements that emit electroluminescence (EL) light when voltage is applied have a wide range of uses as flat thin display elements, and are effective, for example, as display elements for various information terminal devices.
現在実用化されているＥＬ素子は、硫化亜鉛（ＺｎＳ）
を母材層とし、これにマンガン（Ｍｎ＞を添加したオレ
ンジ発光の発光層を有するものが主流であるが、モノカ
ラーであるため表示できる情報量に限界がある。そこて
、近年、多量の情報を表示できる多色ＥＬ素子が検討さ
れており、例えば、異なる発光色を示す複数の発光層を
同一平面上に分割・配置したＥＬ素子が知られている。EL elements currently in practical use are made of zinc sulfide (ZnS).
The mainstream is to have a light-emitting layer that emits orange light by adding manganese (Mn>) to the base material layer, but since it is monochrome, there is a limit to the amount of information that can be displayed. Multicolor EL devices capable of displaying information have been studied, and, for example, EL devices in which a plurality of light emitting layers emitting different colors of light are divided and arranged on the same plane are known.
このような構造のＥ Ｌ素子は、多層配線が不要である
、素子の薄型化などの利点を有するが、複数の発光層を
同一平面上に分割・配置しているため、発光層をエツチ
ングしてパターン化する際に、既に形成された他の発光
層がエツチングの影響を受け、発光層の膜厚や発光輝度
が不均一になるという欠点があった。EL devices with this type of structure have advantages such as not requiring multilayer wiring and making the device thinner, but since multiple light-emitting layers are divided and arranged on the same plane, etching of the light-emitting layers is not necessary. When patterning is performed, other light-emitting layers that have already been formed are affected by etching, resulting in non-uniformity in the film thickness and luminance of the light-emitting layer.
これを解決する方法として、発光層をパターン化した後
、発光層をエツチングに対し安定なストッパ一層で被覆
することが提案されている。（例えば、特開昭６１−１
０７６９６号公報等〉。As a method to solve this problem, it has been proposed to pattern the light emitting layer and then cover the light emitting layer with a single layer of a stopper that is stable against etching. (For example, JP-A-61-1
Publication No. 07696, etc.>
第３図はこのような素子の製造工程を示す図であり、ガ
ラス基板１上に、Ｉ Ｔｏ （Ｉｎｄｉｕｍ Ｔｉｎ０
ｘｉｄｅ）！よりなる帯状の透明電極２１、五酸化タン
タル（Ｔａ２０５）等よりなる第１誘電体層３１を順次
積層形成し、その上に、例えばＺｎＳを母材層とし、発
光中心としてＭｎを添加した第１発光層５ａを形成する
（工程（１））。FIG. 3 is a diagram showing the manufacturing process of such an element, in which I To (Indium Tin0
xide)! A first dielectric layer 31 made of tantalum pentoxide (Ta205), etc. is successively laminated, and a first dielectric layer 31 made of, for example, ZnS as a base material layer and Mn added as a luminescent center is formed on top of the first dielectric layer 31 made of tantalum pentoxide (Ta205), etc. A light emitting layer 5a is formed (step (1)).
次に、第１発光層５ａの所定部位に塗布したフォトレジ
スト７１をマスクとしてエツチングを行ない、第１発光
層５ａを所定のパターンに加工する（工程（２））。Next, etching is performed using the photoresist 71 applied to a predetermined portion of the first light emitting layer 5a as a mask to process the first light emitting layer 5a into a predetermined pattern (step (2)).
さらに、第１発光層５ａおよび第１誘電体層３１の表面
を５ｉ０２等よりなる膜厚１０〜３００への被膜で覆っ
てストッパ一層８１とする（工程（３））。Furthermore, the surfaces of the first light emitting layer 5a and the first dielectric layer 31 are covered with a film made of 5i02 or the like to a thickness of 10 to 300 mm to form a stopper layer 81 (step (3)).
ストッパ一層８１上には、例えば、Ｚ ｎ、 Ｓを母材
層とし希土類フッ化物を添加した第２発光層５ｂを形成
する（工程（４））。前記第１発光層５ａと同様にして
所定部位にフォトレジスト７２を塗布し、他をエツチン
グにより除去して第２発光層５ｂを所定のパターンに加
工する。On the stopper layer 81, the second light emitting layer 5b is formed, for example, using Zn, S as a base material layer and adding rare earth fluoride (step (4)). Similarly to the first light emitting layer 5a, a photoresist 72 is applied to predetermined portions, and the remaining portions are removed by etching to process the second light emitting layer 5b into a predetermined pattern.
同様にして表面にス）〜ツバ一層８２を形成した後（工
程（５））、さらに第３発光層５ｃを形成してフォトレ
ジスト７３を塗布しく工程（６））、エツチングにより
所定のパターンに加工する（工程（７））。After forming layers 82 to 3 on the surface in the same manner (step (5)), a third light emitting layer 5c is further formed and a photoresist 73 is applied (step (6)), followed by etching into a predetermined pattern. Process (step (7)).
その後、全面に第２誘電体１３２を形成し、帯状の上部
電極２２を形成してＥＬ素子とする（工程（８））。Thereafter, a second dielectric 132 is formed on the entire surface, and a band-shaped upper electrode 22 is formed to form an EL element (step (8)).
［発明が解決しようとする課題］
ところが、上記従来の方法では、発光層を所定のパター
ンに加工する際に、発光層の側面が露出するため、側面
がエツチング液の影響を受けなり（サイドエツチング）
、発光層中へ水分が吸湿されやすい。また、フォトレジ
ストを除去（湿式または乾式）する時にも、発光層表面
に損傷を与え、発光特性、耐久性に悪影響を及ぼすこと
がある。[Problems to be Solved by the Invention] However, in the conventional method described above, the side surfaces of the light emitting layer are exposed when the light emitting layer is processed into a predetermined pattern. )
, moisture is easily absorbed into the luminescent layer. Further, when removing the photoresist (wet or dry), the surface of the light emitting layer may be damaged, which may adversely affect the light emitting characteristics and durability.
また、発光層を被覆するストッパ一層は、膜厚が１０〜
３００八と薄いため（発光層は通常３０００八以上）、
発光層との段差部でストッパ一層が段切れを生じたり、
マイクロクラックが発生することがあり、信頼性が必ず
しも十分ではなかっな。Furthermore, the single layer of the stopper covering the light emitting layer has a film thickness of 10 to 10 mm.
Because it is as thin as 300.8 mm (light-emitting layer is usually 30.08 mm or more),
The stopper layer may break off at the step between it and the light emitting layer.
Microcracks may occur, and reliability is not always sufficient.
しかして、本発明は、サイドエツチング、あるいはレジ
スト除去時の表面損傷を防止し、高い信頼性を有するＥ
Ｌ素子を得ることを目的とするものである。Therefore, the present invention prevents surface damage during side etching or resist removal, and has high reliability.
The purpose is to obtain an L element.
［課題を解決するための手段ｌ
上記目的を達成するために、本発明では、少なくとも一
方を透明電極とした一対の電極間に挟持せしめて、異な
る発光色を示す複数の発光層を同一平面上に配した薄膜
エレクトロルミネセンス素子を、
絶縁基板上に下部電極を配設して、該下部電極上に第１
誘電体層を形成する工程と、
第１誘電体層上に、耐湿性・耐薬品性の誘電体層を形成
し、該誘電体層の、上記複数の発光層に対応する部分を
除去して、各発光層を区画する隔壁を形成する工程と、
隔壁により区画された空間内に所定の発光色を有する発
光層を形成し、発光層上に耐湿性・耐薬品性の誘電体よ
りなる被覆層を形成した後、隔壁により区画された空間
内の所定領域を残して、発光層および被覆層を除去する
ことを発光層の種類に応じて順次繰返す工程と、
被覆層および隔壁上に第２誘電体層を形成する工程と、
第２誘電体層上に上部電極を配設する工程により製造す
る。[Means for Solving the Problems] In order to achieve the above object, in the present invention, a plurality of light emitting layers showing different light emitting colors are arranged on the same plane by being sandwiched between a pair of electrodes, at least one of which is a transparent electrode. A thin film electroluminescent element arranged on the substrate is disposed on an insulating substrate, and a lower electrode is arranged on the insulating substrate, and a first electrode is placed on the lower electrode.
forming a dielectric layer, forming a moisture-resistant and chemical-resistant dielectric layer on the first dielectric layer, and removing portions of the dielectric layer corresponding to the plurality of light emitting layers; , a step of forming a partition wall that partitions each light emitting layer, forming a light emitting layer having a predetermined luminescent color in the space partitioned by the partition wall, and coating the light emitting layer with a moisture-resistant and chemical-resistant dielectric material. After forming the layer, removing the light-emitting layer and the covering layer while leaving a predetermined area in the space partitioned by the partition wall is repeated depending on the type of the light-emitting layer; It is manufactured by forming a dielectric layer and disposing an upper electrode on the second dielectric layer.
「作用］
上記方法によれば、発光層を形成するにあたり、予め、
発光層を区画する耐湿性・耐薬品性の隔壁を形成し、該
隔壁内に所定色の発光層を順次形成するようにしたので
、発光層の側面は隔壁により保護され、エツチング液の
影響を受けることを防止する。"Function" According to the above method, in forming the light emitting layer, in advance,
Moisture-resistant and chemical-resistant partition walls are formed to partition the light-emitting layer, and light-emitting layers of predetermined colors are sequentially formed within the partition walls, so that the sides of the light-emitting layer are protected by the partition walls and are not affected by the etching solution. prevent receiving.
また、発光層表面を耐湿性・耐薬品性の被覆層で覆った
後、パターン化しているので、レジスト除去時の表面損
傷が防止される。Furthermore, since the surface of the light-emitting layer is patterned after being covered with a moisture-resistant and chemical-resistant coating layer, damage to the surface during resist removal is prevented.
［実施例］ 以下、本発明の一実施例を図面に基づいて説明する。[Example] Hereinafter, one embodiment of the present invention will be described based on the drawings.
第１図は本発明方法を適用した薄膜ＥＬ素子の全体断面
図であり、ガラス基板１上には下部電極２１、第１誘電
体層３１が形成しである。下部電極２１は透明電極で、
複数の帯状電極を平行配設してなる。FIG. 1 is an overall sectional view of a thin film EL device to which the method of the present invention is applied, in which a lower electrode 21 and a first dielectric layer 31 are formed on a glass substrate 1. The lower electrode 21 is a transparent electrode,
It is made up of a plurality of strip electrodes arranged in parallel.
第１誘電体層３１の上面には、第１−発光層５ａ、第２
発光層５ｂ、第３発光層５ｃが同一面上に形成してあり
、各発光層は耐湿性・耐薬品性に優れた誘電体よりなる
隔壁４により区画されている。On the upper surface of the first dielectric layer 31, a first light emitting layer 5a, a second light emitting layer 5a and a second light emitting layer 5a are provided.
A light-emitting layer 5b and a third light-emitting layer 5c are formed on the same surface, and each light-emitting layer is partitioned by a partition wall 4 made of a dielectric material with excellent moisture resistance and chemical resistance.
各発光層５ａ、５ｂ、５０表面は、それぞれ耐湿性・耐
薬品性に優れた誘電体よりなる被覆層６ａ、６ｂ、６Ｃ
で被覆され、該被覆Ｎ６ａ、６ｂ、６Ｃおよび隔壁４上
には、第２誘電体層３２、」二部電極２２が順次積層形
成しである。上部電極２２は複数の帯状電極よりなり、
これらを上記下部電極２１．と交差する方向に平行に配
しである。The surface of each light emitting layer 5a, 5b, 50 is covered with a coating layer 6a, 6b, 6C made of a dielectric material having excellent moisture resistance and chemical resistance, respectively.
A second dielectric layer 32 and a two-part electrode 22 are sequentially laminated on the coatings N6a, 6b, 6C and the partition wall 4. The upper electrode 22 consists of a plurality of strip-shaped electrodes,
These are connected to the lower electrode 21. It is arranged parallel to the direction that intersects with.
以下、上記構造の薄膜ＥＬ素子の製造方法を第２図で説
明する。Hereinafter, a method for manufacturing a thin film EL element having the above structure will be explained with reference to FIG.
まず、ガラス基板１上にＩ Ｔｏ （Ｔｎｄｉｕｍ Ｔ
ｉｎ０ｘｉｄｅ ）等の透明導電膜を成膜し、ウェット
エツチングにより帯状に加工して下部電極２１とした（
工程（１〉）。First, I To (Tndium T
A transparent conductive film such as inOxide) was formed and processed into a strip shape by wet etching to form the lower electrode 21 (
Process (1>).
次に、下部電極２ｉｎに五酸化タンタル（Ｔａ２０５）
等よりなる第１誘電体層３１を高周波スパッタにより形
成した。第１誘電体層３１の膜厚は５０００Ａとした。Next, 2 inches of the lower electrode was made of tantalum pentoxide (Ta205).
A first dielectric layer 31 made of the following was formed by high frequency sputtering. The thickness of the first dielectric layer 31 was 5000A.
第１誘電体層３１上には窒化ケイ素（Ｓｉ３Ｎ４）等よ
りなる誘電体層４１を高周波スパッタにて成膜した（膜
厚８０００Ａ＞（工程（２））。A dielectric layer 41 made of silicon nitride (Si3N4) or the like was formed on the first dielectric layer 31 by high-frequency sputtering (film thickness: 8000 Å> (step (2)).
誘電体層４１上にフォトレジスト７４を塗布してパター
ン化しく工程（３）〉、これをマスクとして、四フッ化
炭素（ＣＦ４）により誘電体層４１をエツチングして高
さ７０００人の隔壁４を形成した。その後、フォトレジ
スト７４を除去した（工程（４）〉。−
隔壁４上に、マンガン（Ｍｎ）を０．８重量％の割合で
含有する硫化亜８９（ＺｎＳ）ペレットを電子ビーム蒸
着法で６０００への膜厚で全面成膜して第１発光層５ａ
を形成したく工程（５））。A photoresist 74 is applied onto the dielectric layer 41 and patterned (step (3)). Using this as a mask, the dielectric layer 41 is etched with carbon tetrafluoride (CF4) to form partition walls 4 with a height of 7,000 people. was formed. Thereafter, the photoresist 74 was removed (Step (4)).- On the partition wall 4, ZnS sulfide (ZnS) pellets containing 0.8% by weight of manganese (Mn) were deposited at 6000% by electron beam evaporation. The first light emitting layer 5a is formed by forming a film on the entire surface with a film thickness of
Step (5)).
さらにその上に膜厚１００〇への窒化ケイ素（Ｓｉ３Ｎ
４）等よりなる被覆層６ａを高周波スパッタにより全面
成膜した（工程（６））。Furthermore, silicon nitride (Si3N) is applied to a film thickness of 1000 on top of that.
A coating layer 6a consisting of 4) and the like was formed on the entire surface by high frequency sputtering (step (6)).
次に、所定領域、すなわち第１図における第１発光層５
ａ形成領域上に、フォトレジスト７５を塗布してパター
ン化し、これをマスクとして被覆層６ａを四フッ化炭素
（ＣＦ４）によりエツチングした後、さらに第１発光層
５ａを塩酸（ＨＣ，Ｑ）等の酸でエツチングしたく工程
（８〉〉。その後、フォトレジスト７５を除去した（工
程（９））。Next, a predetermined region, that is, the first light emitting layer 5 in FIG.
A photoresist 75 is applied and patterned on the formation area a, and using this as a mask, the covering layer 6a is etched with carbon tetrafluoride (CF4), and then the first light emitting layer 5a is etched with hydrochloric acid (HC, Q), etc. Then, the photoresist 75 was removed (step (9)).
続いて、三フッ化テルビウム（ＴｂＦ３）を５重量％の
割合で含有する硫化亜鉛（ＺｎＳ）ペレットを電子ビー
ム蒸着法で５８０ＯＡの膜厚で全面成膜して第２発光層
５ｂとした（工程（１０））。Next, zinc sulfide (ZnS) pellets containing 5% by weight of terbium trifluoride (TbF3) were deposited on the entire surface to a thickness of 580 OA by electron beam evaporation to form the second light emitting layer 5b (step (10)).
その上に、上記した第１発光層５ａと同様にして膜厚７
００人の被覆層６ｂを全面成膜した（工程（１１））。On top of that, a film thickness of 7
A coating layer 6b of 00 people was formed over the entire surface (step (11)).
さらに、所定領域にフォトレジスト７６をパターン化し
く工程（１２））、これをマスクとして露出部分の被覆
層６ｂおよび第２発光層５ｂを除去したく工程（１３＞
）。その後、フォトレジスト７６を除去した（工程（
１４））。Further, there is a step (12) of patterning a photoresist 76 in a predetermined area, and a step (13) of removing exposed portions of the covering layer 6b and second light emitting layer 5b using this as a mask.
). Thereafter, the photoresist 76 was removed (step (
14)).
同様にして、隔壁４内に第３の発光層５ｃを形、 成す
る工程を繰返しく工程同格）、その後、Ｔａ２０５等よ
りなる第２誘電体層３２を高周波スパッタにより（工程
（１５））、アルミニウム（Ａρ）等よりなる上部電極
２２を電子ビーム蒸着法で成膜したく工程（１６））。Similarly, the third light emitting layer 5c is formed within the partition wall 4. After that, the second dielectric layer 32 made of Ta205 or the like is formed by high frequency sputtering (step (15)). Step (16)) of forming an upper electrode 22 made of aluminum (Aρ) or the like by electron beam evaporation.
各々の膜厚は、第２誘電体層３２を５００ＯＡ、上部電
極２２を４００ＯＡとした。そして、上部電極２２のパ
ターンにフォトレジスト７７を塗布して、ウェットエツ
チングにより下部電極２１と直交する帯状に加工し、フ
ォトレジスト７７を除去しなく工程（１７）、（１８）
）。さらに下部電極２１の電極取出し部を形成するため
のフォトレジスト７８をパターニングし、隔壁４をエツ
チングして電極取出し部９を露出させ、フォトレジスト
７８を除去してＥＬ素子としな（工程（１９＞（２０）
’）。The thickness of each film was 500 OA for the second dielectric layer 32 and 400 OA for the upper electrode 22. Then, a photoresist 77 is applied to the pattern of the upper electrode 22 and processed into a strip shape perpendicular to the lower electrode 21 by wet etching, and steps (17) and (18) are performed without removing the photoresist 77.
). Furthermore, the photoresist 78 for forming the electrode extraction part of the lower electrode 21 is patterned, the partition wall 4 is etched to expose the electrode extraction part 9, and the photoresist 78 is removed to form an EL element (step (19)). (20)
').
これにより、異なる発光色の発光層を同一平面上に複数
有するＥＬ素子が形成され、複数の帯状下部電極２１お
よび上部電極２２を任意に選択して電圧を印加すること
により、その交点に位置する発光層においてＥＬ光発光
生起する。従ってこれらを組合わせることにより多色表
示が可能となる。As a result, an EL element having a plurality of light emitting layers of different light emitting colors on the same plane is formed, and by arbitrarily selecting a plurality of band-shaped lower electrodes 21 and upper electrodes 22 and applying a voltage, positions at the intersections thereof are formed. EL light emission occurs in the light emitting layer. Therefore, by combining these, multicolor display becomes possible.
なお、各発光層はその材質により発光特性が異なり、通
常は、各発光層の発光輝度を合せるためには発光層ごと
に印加電圧を制御する必要があるが、上記実施例では各
発光層の膜厚および各被覆層の膜厚を発光特性に応じて
変更することにより発光駆動電圧を一致させである。従
って、発光層ごとに印加電圧を制御する必要がなくなり
、駆動回路を簡単にすることができる。Note that each light-emitting layer has different light-emitting characteristics depending on its material, and normally it is necessary to control the applied voltage for each light-emitting layer in order to match the luminance of each light-emitting layer. By changing the film thickness and the film thickness of each coating layer according to the light emission characteristics, the light emission driving voltage can be made to match. Therefore, there is no need to control the applied voltage for each light emitting layer, and the drive circuit can be simplified.
上記実施例では隔壁の構成材料として窒化ケイ素（Ｓｉ
３Ｎ４）を用いたが、耐湿性・耐薬品性に優れる材料で
あればよく、これ以外に例えば酸化ケイ素（ＳｉＯ２）
が使用できる。In the above embodiment, silicon nitride (Si) is used as the constituent material of the partition wall.
3N4) was used, but any material with excellent moisture resistance and chemical resistance may be used; other materials such as silicon oxide (SiO2)
can be used.
上記実施例では３種類の異なる発光層を同一面上に有す
る構成のものを示したが、本発明では、発光層を２種類
あるいは４種類以上有するものに適用することももちろ
ん可能である。Although the above-mentioned embodiment shows a structure having three different types of light emitting layers on the same surface, it is of course possible to apply the present invention to a structure having two or four or more types of light emitting layers.
さらにドツトマトリックス電極以外にも、セグメントタ
イプ電極などの図形電極のものにも適用でき、電極パタ
ーンに応じて発光層を配設することにより多色表示が可
能である。Furthermore, in addition to dot matrix electrodes, the present invention can also be applied to graphic electrodes such as segment type electrodes, and multicolor display is possible by arranging a light emitting layer according to the electrode pattern.
［発明の効果］
本発明によれば、予め、発光層を区画する耐湿性・耐薬
品性の隔壁を形成して該隔壁内に所定色の発光層を形成
したので、エツチング時に発光層の側面が露出せず、サ
イドエツチングや水分の吸収による劣化を防止すること
ができる。また、発光層表面を耐湿性・耐薬品性の被覆
層で覆った後、エツチングによりパターン化するように
したので、発光層表面が被覆層により保護され、レジス
ト除去時の表面損傷を確実に防止できる。さらに隔壁は
、加工が容易で、加工精度も高く、従来のように断切れ
、マイクロクラック等が発生するおそれが小さいなど、
高い信頼性を有する薄膜ＥＬ素子を得ることができる。[Effects of the Invention] According to the present invention, moisture-resistant and chemical-resistant partition walls are formed in advance to partition the light-emitting layer, and a light-emitting layer of a predetermined color is formed within the partition walls. is not exposed, and side etching and deterioration due to moisture absorption can be prevented. In addition, the surface of the light-emitting layer is covered with a moisture-resistant and chemical-resistant coating layer, and then patterned by etching, so the surface of the light-emitting layer is protected by the coating layer, and surface damage when removing the resist is reliably prevented. can. Furthermore, the partition wall is easy to process, has high processing accuracy, and has less risk of breaking, microcracks, etc. unlike conventional methods.
A thin film EL element with high reliability can be obtained.
第１図は本発明の方法により製造された薄膜ＥＬ素子の
全体断面図、第２図は本発明の薄膜ＥＬ素子の製造方法
を示す工程図、第３図は従来の薄膜ＥＬ素子の製造方法
を示す工程図である。
１・・・・・・ガラス基板（絶縁基板）＝ １３−
２１・・・・・・下部電極
２２・・・・・・上部電極
３１．３２・・・・・・誘電体層
４・・・・・・隔壁
５ａ、５ｂ、５ｃ・・・・・・発光層
６ａ、６ｂ、６Ｃ・・・・・・被覆層
第２図
第２図
第２図
第３図FIG. 1 is an overall sectional view of a thin film EL device manufactured by the method of the present invention, FIG. 2 is a process diagram showing the method of manufacturing a thin film EL device of the present invention, and FIG. 3 is a conventional method of manufacturing a thin film EL device. FIG. 1... Glass substrate (insulating substrate) = 13- 21... Lower electrode 22... Upper electrode 31.32... Dielectric layer 4... ...Partition walls 5a, 5b, 5c...Light emitting layers 6a, 6b, 6C...Coating layer Fig. 2 Fig. 2 Fig. 3
Claims (1)
せしめて、異なる発光色を示す複数の発光層を同一平面
上に配した薄膜エレクトロルミネセンス素子の製造方法
において、 絶縁基板上に下部電極を配設して、該下部電極上に第
１誘電体層を形成する工程と、 第１誘電体層上に、耐湿性・耐薬品性の誘電体層を形
成し、該誘電体層の、上記複数の発光層に対応する部分
を除去して、各発光層を区画する隔壁を形成する工程と
、 隔壁により区画された空間内に所定の発光色を有する
発光層を形成し、発光層上に耐湿性・耐薬品性の誘電体
よりなる被覆層を形成した後、隔壁により区画された空
間内の所定領域を残して、発光層および被覆層を除去す
ることを発光層の種類に応じて順次繰返す工程と、 被覆層および隔壁上に第２誘電体層を形成する工程と
、 第２誘電体層上に上部電極を配設する工程とからなる
ことを特徴とする薄膜エレクトロルミネセンス素子の製
造方法。[Scope of Claims] A method for manufacturing a thin film electroluminescent device in which a plurality of light emitting layers emitting different light emitting colors are arranged on the same plane and sandwiched between a pair of electrodes, at least one of which is a transparent electrode, comprising: an insulating substrate; a step of disposing a lower electrode on top and forming a first dielectric layer on the lower electrode; forming a moisture-resistant and chemical-resistant dielectric layer on the first dielectric layer; removing portions of the body layer corresponding to the plurality of light-emitting layers to form partition walls that partition each light-emitting layer; and forming a light-emitting layer having a predetermined luminescent color in the space partitioned by the partition walls. After forming a coating layer made of a moisture-resistant and chemical-resistant dielectric material on the luminescent layer, the luminescent layer and the coating layer are removed, leaving a predetermined area within the space partitioned by the partition wall. A thin film electrolytic device characterized by comprising steps of repeating the steps in sequence according to the type, a step of forming a second dielectric layer on the covering layer and the partition wall, and a step of disposing an upper electrode on the second dielectric layer. A method for manufacturing a luminescent element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1127061A JP2773243B2 (en) | 1989-05-19 | 1989-05-19 | Method of manufacturing thin film electroluminescent device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1127061A JP2773243B2 (en) | 1989-05-19 | 1989-05-19 | Method of manufacturing thin film electroluminescent device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02306580A true JPH02306580A (en) | 1990-12-19 |
| JP2773243B2 JP2773243B2 (en) | 1998-07-09 |
Family
ID=14950623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1127061A Expired - Fee Related JP2773243B2 (en) | 1989-05-19 | 1989-05-19 | Method of manufacturing thin film electroluminescent device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2773243B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5989785A (en) * | 1994-12-22 | 1999-11-23 | Nippondenso Co., Ltd. | Process for fabricating an electroluminescent device |
| KR100554495B1 (en) * | 2003-12-30 | 2006-03-03 | 엘지.필립스 엘시디 주식회사 | Dual panel type organic electroluminescent device and manufacturing method thereof |
| JP2007095706A (en) * | 2006-11-20 | 2007-04-12 | Seiko Epson Corp | Light emitting device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02126591A (en) * | 1988-11-04 | 1990-05-15 | Kenwood Corp | Membranous el element and its manufacture |
-
1989
- 1989-05-19 JP JP1127061A patent/JP2773243B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02126591A (en) * | 1988-11-04 | 1990-05-15 | Kenwood Corp | Membranous el element and its manufacture |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5989785A (en) * | 1994-12-22 | 1999-11-23 | Nippondenso Co., Ltd. | Process for fabricating an electroluminescent device |
| KR100554495B1 (en) * | 2003-12-30 | 2006-03-03 | 엘지.필립스 엘시디 주식회사 | Dual panel type organic electroluminescent device and manufacturing method thereof |
| JP2007095706A (en) * | 2006-11-20 | 2007-04-12 | Seiko Epson Corp | Light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2773243B2 (en) | 1998-07-09 |
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