JPH0234171B2 - - Google Patents

Info

Publication number
JPH0234171B2
JPH0234171B2 JP55141318A JP14131880A JPH0234171B2 JP H0234171 B2 JPH0234171 B2 JP H0234171B2 JP 55141318 A JP55141318 A JP 55141318A JP 14131880 A JP14131880 A JP 14131880A JP H0234171 B2 JPH0234171 B2 JP H0234171B2
Authority
JP
Japan
Prior art keywords
region
type
electrode
semiconductor
mis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55141318A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5764967A (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP55141318A priority Critical patent/JPS5764967A/ja
Publication of JPS5764967A publication Critical patent/JPS5764967A/ja
Publication of JPH0234171B2 publication Critical patent/JPH0234171B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP55141318A 1980-10-08 1980-10-08 Semiconductor device Granted JPS5764967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55141318A JPS5764967A (en) 1980-10-08 1980-10-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55141318A JPS5764967A (en) 1980-10-08 1980-10-08 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58125720A Division JPS5925266A (ja) 1983-07-11 1983-07-11 半導体装置作製方法

Publications (2)

Publication Number Publication Date
JPS5764967A JPS5764967A (en) 1982-04-20
JPH0234171B2 true JPH0234171B2 (da) 1990-08-01

Family

ID=15289116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55141318A Granted JPS5764967A (en) 1980-10-08 1980-10-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5764967A (da)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0715973B2 (ja) * 1984-11-29 1995-02-22 新技術事業団 半導体不揮発性メモリ

Also Published As

Publication number Publication date
JPS5764967A (en) 1982-04-20

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