JPH0243743A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0243743A
JPH0243743A JP19376088A JP19376088A JPH0243743A JP H0243743 A JPH0243743 A JP H0243743A JP 19376088 A JP19376088 A JP 19376088A JP 19376088 A JP19376088 A JP 19376088A JP H0243743 A JPH0243743 A JP H0243743A
Authority
JP
Japan
Prior art keywords
semiconductor
bottom plate
semiconductor device
container
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19376088A
Other languages
Japanese (ja)
Inventor
Hirotoshi Kaneda
博利 兼田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP19376088A priority Critical patent/JPH0243743A/en
Publication of JPH0243743A publication Critical patent/JPH0243743A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、両面に電極を有する半導体基板が容器内に収
容され、導電性の容器底板には一面の電極面において固
着され、他面の電極に接続される電極体は容器上方の外
部において外部接続体と加圧接触することにより使用さ
れる半導体装置に関する。
Detailed Description of the Invention [Industrial Field of Application] The present invention provides a semiconductor substrate having electrodes on both sides thereof, which is housed in a container, and which is fixed to a conductive bottom plate of the container on one electrode surface and on the other surface. The electrode body connected to the electrode relates to a semiconductor device that is used by being brought into pressure contact with an external connection body on the outside above the container.

〔従来の技術〕[Conventional technology]

半導体装1を外部回路と接続する場合、外部導体板への
ねじ込み、ねじ止め、ろう付け、外部接続導線とのねし
止め、ろう付け、かしめなどの方法が用いられる。その
ほかに平面的な加圧接触を利用する場合がある。第2図
はそのような半導体装置の一例で、半導体基板1を冷却
体を兼ねる金属製底板2と樹脂製側壁3よりなる容器内
に収容し、基板1の下面の電極を底板2と、上面の電極
を電極体4とはんだ付けし、電極体4の上部が露出する
ように樹脂5を注型したものである。この半導体装置を
使用する際は、下部接続導体板と上部接続導体の間には
さみ、上部接続導体を介して、例えば150kg/ca
+”の圧力を電極体4に加えることにより、上下の接続
導体と加圧接触により接続させる。
When connecting the semiconductor device 1 to an external circuit, methods such as screwing to an external conductor plate, screwing, brazing, screwing to an external connection conductor, brazing, caulking, etc. are used. In addition, flat pressure contact may be used. FIG. 2 shows an example of such a semiconductor device, in which a semiconductor substrate 1 is housed in a container consisting of a metal bottom plate 2 which also serves as a cooling body and a resin side wall 3, and the electrodes on the lower surface of the substrate 1 are connected to the bottom plate 2 and the upper surface. The electrode is soldered to an electrode body 4, and resin 5 is cast so that the upper part of the electrode body 4 is exposed. When using this semiconductor device, it is sandwiched between the lower connecting conductor plate and the upper connecting conductor, and the load of 150 kg/ca is applied via the upper connecting conductor.
By applying a pressure of "+" to the electrode body 4, it is connected to the upper and lower connecting conductors by pressurized contact.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかし、第2図に示した半導体装置を、例えば断続的な
通電を行う半導体装置として使用する場合、電力I置火
により温度の上昇する半導体基板lと底板2の間、ある
いは半導体基板lとfi導体の間のはんだ付部分に疲労
が生じ、特性の劣化が生しやすい欠点があった。この欠
点を避けるためには内部の各部品間も加圧接触させれば
よいが、特別な材料、高い加工精度を必要とするので、
低価格の半導体装置には採用不可能である。さらに第2
図に示した半導体装置では、電橋体4を加圧する圧力が
直接半導体基板1の中央部にかかるので、底板2の上面
と電橋体4の下面との間の平行度が十分でないときには
半導体基板に偏荷重が加ねり、それによっても特性劣化
が起こる可能性があった。
However, when the semiconductor device shown in FIG. 2 is used, for example, as a semiconductor device that conducts intermittent energization, the temperature rises between the semiconductor substrate l and the bottom plate 2 due to the heating of the electric power I, or between the semiconductor substrate l and the fi This method has the drawback that fatigue occurs in the soldered portion between the conductors, which tends to cause deterioration of characteristics. In order to avoid this drawback, it is possible to pressurize the internal parts, but this requires special materials and high processing precision.
It cannot be adopted for low-cost semiconductor devices. Furthermore, the second
In the semiconductor device shown in the figure, the pressure that applies the electric bridge body 4 is applied directly to the center of the semiconductor substrate 1, so if the parallelism between the upper surface of the bottom plate 2 and the lower surface of the electric bridge body 4 is not sufficient, the semiconductor Unbalanced loads were applied to the substrate, which could also cause characteristic deterioration.

本発明の課題は、上記の欠点を除き外部導体との接続の
ために加える圧力により半導体基板に偏荷重が生ずるこ
とがなく、また内部のろう件部の熱疲労も少ない半導体
装置を堤供することにある。
An object of the present invention is to provide a semiconductor device that eliminates the above-mentioned drawbacks and does not cause uneven loads on the semiconductor substrate due to pressure applied for connection with external conductors, and also causes less thermal fatigue of internal solder parts. It is in.

(課題を解決するための手段〕 上記の課題の解決のため、本発明の半導体装1は、導電
性底板と側壁よりなる容器の底板上に複数の半導体基板
が間隔を介して平行な二列をなして配置され、半導体基
板の下面の電極は底板に、上面の電極は対向する他の列
の半導体基板の上面の電極と共通で基板の配列方向に垂
直な方向に並ぶ電極板にそれぞれ固着され、両列の半導
体基板間の間隔の直上に位置する一つの加圧体が各1i
掻体の中央部に固着され、容器内にはその加圧体の上部
を露出させて樹脂が充填されているものとする。
(Means for Solving the Problems) In order to solve the above problems, the semiconductor device 1 of the present invention has a plurality of semiconductor substrates arranged in two parallel rows with an interval on the bottom plate of a container consisting of a conductive bottom plate and a side wall. The electrodes on the bottom surface of the semiconductor substrate are fixed to the bottom plate, and the electrodes on the top surface are fixed to the electrode plates that are common to the top surface electrodes of the semiconductor substrates in other rows and are arranged in a direction perpendicular to the direction in which the substrates are arranged. One pressure body located directly above the gap between the semiconductor substrates in both rows covers each 1i
It is assumed that the pressurizing body is fixed to the center of the pressurizing body, and the container is filled with resin with the upper part of the pressurizing body exposed.

〔作用〕[Effect]

半導体基板が複数に分割されているので、各基板のろう
付面積は小さくなり、熱疲労も起こりにり(、また加圧
体への直下には半導体基板はなく、加圧体への加圧力は
、中央部の下側に弾性をもつ樹脂のある電橋体の両端部
で各半導体基板に加わるため、加圧体の下面と底板の上
面との間の平行度が十分でなくても、大きな偏荷重が半
導体Vi仮に生ずることはない。
Since the semiconductor substrate is divided into multiple parts, the brazing area of each board is small, and thermal fatigue is also likely to occur. is applied to each semiconductor substrate at both ends of the bridge body, which has an elastic resin under the center, so even if the parallelism between the bottom surface of the pressure body and the top surface of the bottom plate is not sufficient, A large unbalanced load will not occur on the semiconductor Vi.

〔実施例〕〔Example〕

第1図は本発明の一実施例の半導体装置の断面図、7g
3図はその容器底板上の部分の斜視図で、第2図と共通
の部分には同一の符号が付されている。この半導体装置
では半導体基板lは6個に分割され、二列に配置されて
容器の金属製底板2の上に下面!橋がはんだ付けされて
いる。一方上面電橋には対向している半導体基板の上面
電極と共通の厚さ0.5 luの電極板6がはんだ付け
されている。従って、3本のti板6が半導体基板lの
配列方向に垂直な方向に平行に並んでいる。さらにこの
各電極板6の中央部の上に1本の高さ5鶴の柱状加圧体
7がはんだ付けされている。この加圧体7は両列の半導
体基板1の間隔の直上にある。
FIG. 1 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention, 7g
FIG. 3 is a perspective view of a portion on the bottom plate of the container, and parts common to those in FIG. 2 are given the same reference numerals. In this semiconductor device, the semiconductor substrate l is divided into six pieces, arranged in two rows, and placed on the bottom surface on the metal bottom plate 2 of the container! The bridge is soldered. On the other hand, an electrode plate 6 having a thickness of 0.5 lu, which is common to the upper surface electrode of the opposing semiconductor substrate, is soldered to the upper surface electric bridge. Therefore, the three Ti plates 6 are arranged in parallel in a direction perpendicular to the arrangement direction of the semiconductor substrates l. Furthermore, a columnar pressurizing body 7 having a height of 5 cranes is soldered onto the center portion of each electrode plate 6. This pressurizing body 7 is located directly above the gap between the semiconductor substrates 1 in both rows.

従って、容器内に充填された注型樹脂5の上に露出して
いる加圧体7の上面に下方に向けて加圧しても、その力
は直接半導体基板1には加わらず、!掻板6を介して樹
脂層5および半導体基板1に分散して加わり、さらに底
板2に加わる。この構造において各半導体基板1は加圧
体7と底板2の間に並列接続され、同種の半導体基板を
用いれば面積の大きい半導体基板1枚の場合と同じ機能
の半導体装置が得られる。しかし、異なる種類の半導体
素子基板を用いて異なる半導体素子を並列接続した半導
体装置を製作することもできる。ただし、その場合も各
基板の厚さは同一であることが必要である。
Therefore, even if pressure is applied downward to the upper surface of the pressurizing body 7 exposed on the casting resin 5 filled in the container, the force is not directly applied to the semiconductor substrate 1! It is distributed and applied to the resin layer 5 and the semiconductor substrate 1 via the scraping plate 6, and further applied to the bottom plate 2. In this structure, each semiconductor substrate 1 is connected in parallel between the pressurizing body 7 and the bottom plate 2, and if semiconductor substrates of the same type are used, a semiconductor device having the same function as a single large-area semiconductor substrate can be obtained. However, it is also possible to manufacture a semiconductor device in which different semiconductor elements are connected in parallel using different types of semiconductor element substrates. However, even in that case, the thickness of each substrate needs to be the same.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、複数個の半導体基板を容器底板上に二
列配置とし、各列の向かい合う基板の上面電極に電極板
を固着し、さらに各電極板のh tMi中央部を一つの
加圧体に固着することにより、容器外で加圧体に加わる
圧力は直接半導体基板に加わらない構造となった。この
構造により、発熱部分が分散され、半導体基板の両面の
電極に対するろう付部分のろうの熱疲労による劣化が生
じにくく、半導体基板への偏荷重による特性劣化も防1
1−。
According to the present invention, a plurality of semiconductor substrates are arranged in two rows on the bottom plate of a container, electrode plates are fixed to the upper electrodes of the opposing substrates in each row, and the center portion of each electrode plate is pressed with one pressure. By fixing it to the body, the structure is such that the pressure applied to the pressurizing body outside the container is not directly applied to the semiconductor substrate. This structure disperses the heat generating parts, prevents deterioration of the solder parts that are soldered to the electrodes on both sides of the semiconductor substrate due to thermal fatigue, and also prevents characteristic deterioration due to unbalanced loads on the semiconductor substrate.
1-.

された信頼性の高い半導体装置が得られる。A highly reliable semiconductor device can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の半導体装置の断面図、第2
図は従来の半導体装置の断面図、第3図は第1図の装置
の容器底板上の部分の斜視図である。 l 半導体基板、 :容器底板、 3 : 容器側壁、 5 : 注型樹脂、 6 : 電極板、 加圧体。 第1図 第2図 第3図
FIG. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention, and FIG.
The figure is a sectional view of a conventional semiconductor device, and FIG. 3 is a perspective view of the portion above the bottom plate of the container of the device of FIG. l Semiconductor substrate, : container bottom plate, 3 : container side wall, 5 : casting resin, 6 : electrode plate, pressurizing body. Figure 1 Figure 2 Figure 3

Claims (1)

【特許請求の範囲】[Claims] 1)導電性底板と側壁よりなる容器の底板上に複数の半
導体基板が間隔が平行な二列をなして配置され、半導体
基板の下面の電極は底板に、上面の電極は対向する他の
列の半導体基板の上面の電極と共通で基板の配列方向に
垂直な方向に並ぶ電極板にそれぞれ固着され、両列の半
導体基板間の間隔の直上に位置する一つの加圧体が各電
極体の中央部に固着され、容器内にはその加圧体の上部
を露出させて樹脂が充填されたことを特徴とする半導体
装置。
1) A plurality of semiconductor substrates are arranged in two rows with parallel spacing on the bottom plate of a container consisting of a conductive bottom plate and side walls, and the electrodes on the bottom surface of the semiconductor substrates are connected to the bottom plate, and the electrodes on the top surface are connected to the other opposing rows. A pressurizing body is attached to each electrode plate that is common to the electrodes on the top surface of the semiconductor substrates and is arranged in a direction perpendicular to the arrangement direction of the substrates, and is located directly above the gap between the semiconductor substrates in both rows. What is claimed is: 1. A semiconductor device, characterized in that the semiconductor device is fixed to a central portion, and a container is filled with resin with the upper part of the pressurizing body exposed.
JP19376088A 1988-08-03 1988-08-03 Semiconductor device Pending JPH0243743A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19376088A JPH0243743A (en) 1988-08-03 1988-08-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19376088A JPH0243743A (en) 1988-08-03 1988-08-03 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0243743A true JPH0243743A (en) 1990-02-14

Family

ID=16313352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19376088A Pending JPH0243743A (en) 1988-08-03 1988-08-03 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0243743A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258522A (en) * 1991-08-01 1993-11-02 Nippon Mining Co., Ltd. Imidazole-silane compounds and metal surface finishing agent containing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258522A (en) * 1991-08-01 1993-11-02 Nippon Mining Co., Ltd. Imidazole-silane compounds and metal surface finishing agent containing the same

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