JPH0246053Y2 - - Google Patents

Description

[Detailed description of the invention] (a) Technical field of the invention The invention relates to a liquid phase epitaxial growth apparatus for semiconductors, more specifically, to a substrate holder for a closed tube tipping epitaxial growth apparatus for compound semiconductors. be.

(b) Prior art and problems Liquid phase epitaxial growth of compound semiconductors containing components with high vapor pressure (such as HgCdTe) prevents specific components (such as Hg) from being reduced by evaporation. In order to do this, the solution is brought into contact with the substrate in a sealed container. As an apparatus for carrying out such liquid phase epitaxial growth, the present inventors proposed a closed tube tipping type liquid phase epitaxial growth apparatus in Japanese Patent Application No. 199423/1983. This device consists of a plate for holding a semiconductor substrate, two fixing jigs with grooves into which the holding plate is fitted, and a quartz ampoule tube. A solid semiconductor piece to be used as a solution is placed between them, two fixing jigs are inserted, and the opening of the quartz ampoule tube is fused and closed. The quartz ampoule tube prepared in this way is heated in a heating furnace to dissolve the semiconductor pieces into a solution, and the quartz ampoule tube is rotated together with the fixing jig inside, and the holding plate and substrate are immersed in the solution. and rotate it further to remove it from the solution. During this immersion, an epitaxial layer grows on the semiconductor substrate.

A conventional holding plate consists of a flat lower plate and an upper plate with a hole into which the semiconductor substrate is inserted, and the four corners of the hole are provided with pots (protrusions) for holding the semiconductor substrate. First, a predetermined semiconductor substrate is placed on a flat lower plate, and the semiconductor substrate is held by covering the semiconductor substrate with the upper plate so that the semiconductor substrate fits in the above-described hole. and,
The upper plate and lower plate are inserted as a set into the groove of the fixing jig, and fixed by being sandwiched between the two fixing jigs. However, with such a holding plate,
Careful attention is required to place the upper plate on the semiconductor substrate from above, and in some cases, the upper plate may swell, resulting in damage to the surface of the semiconductor substrate.

(c) Purpose of the invention The purpose of the invention is to provide a holding plate and a fixing jig for the holding plate that can be easily attached to the holding plate without damaging the semiconductor substrate when the semiconductor substrate is attached to the holding plate. It is.

(d) Structure of the device The above-mentioned purpose is to provide a holding plate having a substrate receiving recess and two fixing jigs each having an insertion groove in the holding plate, and the depth of the insertion groove is as follows. A closed-tube tipping type liquid phase epitaxial growth apparatus is used, which is characterized in that the end face of the fixture is deep enough to cover a part of the substrate accommodation recess when the holding plate is attached to the fixture. It is composed of

(e) Embodiments of the invention Hereinafter, the present invention will be explained in more detail by way of embodiments of the invention with reference to the accompanying drawings.

The substrate holding plate 1 of the closed tube tipping type liquid phase epitaxial growth apparatus according to the present invention shown in FIG.
A recess 2 for accommodating a semiconductor substrate 3 (FIG. 2) is formed in the center of the quartz glass plate. The size of the recess 2 is slightly larger than the semiconductor substrate 3, and can be formed by ultrasonic processing, for example.

After putting the semiconductor substrate 3 into the recess 2 of the substrate holding plate 1, it is assembled by inserting it into the grooves 6 and 7 of the two fixing jigs 4 and 5 as shown in FIG. and put it into a quartz ampoule tube (not shown). The quartz ampoule tube is then fused and sealed in the conventional manner, heated in a heating furnace to form a growth solution, and the semiconductor substrate is immersed in the solution by rotating the quartz ampoule tube together with a fixture therein. , growing an epitaxial layer on a semiconductor substrate. The semiconductor substrate is further rotated to remove it from the solution to complete the liquid phase epitaxial growth. After cooling, the quartz ampoule tube is cut along the outer periphery to form an opening and the substrate holding plate is taken out together with the fixing jig. The substrate holding plate is removed from the groove of the fixing jig, and the semiconductor substrate having the epitaxial growth layer is taken out from the recess of the substrate holding plate.

In the present invention, in order to prevent the semiconductor substrate in the recess of the substrate holding plate from falling downward when the substrate holding plate is rotated together with the quartz ampoule tube,
As shown in FIG. 3, the end surface 8 of the fixing jig 4 is placed on the edge of the semiconductor substrate 3 to press the semiconductor substrate 3. In order to hold the semiconductor substrate in this way, the grooves 6 formed in the fixing jigs 4 and 5 must be
and 7, so that when the substrate holding plate 1 is inserted into the grooves 6 and 7, the edge of the recess 2 (that is, the semiconductor substrate 3) is a distance x inside the end surface 8 of the fixing jig. Decide as it is. This distance x is preferably 0.5 mm or less.

(e) Effects of the invention According to the invention, the substrate holding plate and the fixing jig have a simple shape and are easy to manufacture, making it easy to mount a semiconductor substrate, and there is no fear of scratches as in the conventional method. Furthermore, since the periphery of the substrate is covered with a holding plate and does not come into contact with the melt, abnormal growth from the periphery of the semiconductor substrate is reduced.

[Brief explanation of the drawing]

FIG. 1 is a perspective view of a semiconductor substrate holding plate of a liquid phase epitaxial growth apparatus according to the present invention;
The figure is a schematic sectional view when the substrate holding plate and the fixing jig are assembled, and FIG. 3 is an enlarged sectional view of portion A in FIG. 2. DESCRIPTION OF SYMBOLS 1... Substrate holding plate, 2... Recess, 3... Semiconductor substrate, 4, 5... Fixing jig, 6, 7... Groove, 8...
…End face.

Claims (1)

[Scope of utility model registration request] A holding plate having a substrate accommodation recess and two fixing jigs having insertion grooves for the holding plate,
The depth of the insertion groove is such that when the holding plate is attached to the fixing jig, the end face of the fixing jig covers a part of the board accommodation recess. Closed tube tipping type liquid phase epitaxial growth equipment.