JPH0246529A - Method for manufacturing perpendicular magnetic recording media - Google Patents
Method for manufacturing perpendicular magnetic recording mediaInfo
- Publication number
- JPH0246529A JPH0246529A JP63196514A JP19651488A JPH0246529A JP H0246529 A JPH0246529 A JP H0246529A JP 63196514 A JP63196514 A JP 63196514A JP 19651488 A JP19651488 A JP 19651488A JP H0246529 A JPH0246529 A JP H0246529A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- electron beam
- magnetic recording
- polymer substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は優れた磁気特性を有する垂直磁気記録媒体の製
造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing a perpendicular magnetic recording medium having excellent magnetic properties.
従来の技術
次世代の高密度磁気記録方式として、垂直磁気記録が広
く研究されている。垂直磁気記録媒体としてはCoCr
系の材料が最も広く研究されており、スパッタ法・真空
蒸着法によってCoCr垂直磁気A−7
記録媒体(以下CoCr膜と略す)が研究開発されてい
る。中でも真空蒸着法を用いると毎秒数百nm以上の堆
積速度でCoCr膜が形成出来、量産性に優れている。BACKGROUND OF THE INVENTION Perpendicular magnetic recording has been widely studied as a next-generation high-density magnetic recording system. CoCr is used as a perpendicular magnetic recording medium.
CoCr perpendicular magnetic A-7 recording media (hereinafter abbreviated as CoCr film) have been researched and developed using sputtering and vacuum evaporation methods. Among them, when a vacuum evaporation method is used, a CoCr film can be formed at a deposition rate of several hundred nanometers per second or more, and is excellent in mass productivity.
発明が解決しようとする課題
前述の様に、真空蒸着法を用いると高堆積速度でCo
Cr膜の形成が可能となるが、同一基板温度においては
、堆積速度が高くなるに伴ない、膜の保磁力は低下する
。従って十分と思われる保磁力を得る為には堆積速度の
上昇に伴なって基板温度を上げる必要があるので、より
低い基板温度で高い保磁力を得る技術が望まれていた。Problems to be Solved by the Invention As mentioned above, by using the vacuum evaporation method, Co can be deposited at a high deposition rate.
Although it is possible to form a Cr film, at the same substrate temperature, as the deposition rate increases, the coercive force of the film decreases. Therefore, in order to obtain a sufficient coercive force, it is necessary to increase the substrate temperature as the deposition rate increases, and therefore a technique for obtaining a high coercive force at a lower substrate temperature has been desired.
課題を解決するだめの手段
本発明は上記問題点を解決する為の手段であって、円筒
状キャンの周側面に沿って走行する長尺型磁気記録媒体
の製造方法において、前記磁性層が形成されつつある前
記高分子基板の表面に電子ビームを照射することを特徴
とする垂直磁気記録3べ一7′
媒体の製造方法である。Means for Solving the Problems The present invention is a means for solving the above-mentioned problems, and is a method for manufacturing a long magnetic recording medium that runs along the circumferential side of a cylindrical can, in which the magnetic layer is formed. This method of manufacturing a perpendicular magnetic recording medium comprises irradiating an electron beam onto the surface of the polymer substrate which is being processed.
作 用
本発明によれば電子ビームを照射することによって、形
成されつつある磁性層の保磁力を高めることが出来るの
で、低基板温度で高保磁力が得られる。Function According to the present invention, the coercive force of the magnetic layer that is being formed can be increased by irradiating the magnetic layer with an electron beam, so that a high coercive force can be obtained at a low substrate temperature.
実施例
第1図〜第3図に本発明の一実施例を示す。巻き出しロ
ール1から巻き出されだ長尺の高分子基板2は円筒状キ
ャン3の周側面に沿って走行中にマスク7の開口部にお
いて蒸発源4よI)CoCr膜又はCoCrNi膜の蒸
着を受けた後、巻き取りロール5に巻き取られる。バイ
アスローラ6は高分子基板2をキャン3に密着させる為
のものである。Embodiment FIGS. 1 to 3 show an embodiment of the present invention. While the long polymer substrate 2 unwound from the unwinding roll 1 is traveling along the circumferential side of the cylindrical can 3, it is exposed to the evaporation source 4 at the opening of the mask 7 to deposit a CoCr film or a CoCrNi film. After receiving it, it is wound up on a winding roll 5. The bias roller 6 is used to bring the polymer substrate 2 into close contact with the can 3.
その際、マスク7の開口部において、アシスト用電子銃
8から電子ビーム9が膜成長過程の高分子基板2に照射
される。アシスト用電子銃8としては直進銃及び27o
0偏向型電子銃のいずれもが使用可能であるが、基板表
面を、基板幅方向及び基板長手方向に走査することが必
要である。At this time, in the opening of the mask 7, an electron beam 9 is irradiated from an assisting electron gun 8 onto the polymer substrate 2 in the film growth process. As the assisting electron gun 8, a straight gun and a 27o
Although any zero deflection type electron gun can be used, it is necessary to scan the substrate surface in the substrate width direction and the substrate longitudinal direction.
第2図は厚さ10μmのポリイミド基板2を用い、キャ
ン温度2000C2堆積速度600nm/sでCoCr
膜を形成した場合のアシスト用電子ビーム電力密度Pと
垂直保磁力Hc土との関係を示した図である。バイアス
ローラへの印加電圧は一200■である。第2図から分
る様に、膜形成中の高分子基板表面側から電子ビーム照
射を行なうことによシ、垂直保磁力の増大が起こる。Figure 2 shows CoCr deposited on a polyimide substrate 2 with a thickness of 10 μm at a can temperature of 2000 C and a deposition rate of 600 nm/s.
FIG. 7 is a diagram showing the relationship between assisting electron beam power density P and vertical coercive force Hc when a film is formed. The voltage applied to the bias roller was -200 cm. As can be seen from FIG. 2, by irradiating the electron beam from the surface side of the polymer substrate during film formation, the vertical coercive force increases.
第3図は厚さ12μmのポリイミド基板2を用い、キャ
ン温度160℃、堆積速度500 n m/ sでCo
Cr N i膜を形成した場合の、アシスト用電子ビ
ーム電力密度Pと垂直保磁力H3土との関係を示しだ図
である。バイアスローラ6への印加電圧は=200Vで
ある。第3図においても電子ビーム照射によって垂直保
磁力は増加している。Figure 3 shows Co deposition using a polyimide substrate 2 with a thickness of 12 μm at a can temperature of 160°C and a deposition rate of 500 nm/s.
FIG. 3 is a diagram showing the relationship between assisting electron beam power density P and vertical coercive force H3 when a Cr Ni film is formed. The voltage applied to the bias roller 6 is 200V. Also in FIG. 3, the vertical coercive force increases due to electron beam irradiation.
この様に電子ビーム照射によって垂直保磁力が増加する
理由は次の様に考えられる。即ち、電子ビーム9の照射
によって膜形成中の基板表面側のエネルギーが高まシ、
基板2に付着した蒸着原子の膜表面での移動可能距離が
長くなるので粒界へ5ベーノ
のCr偏折が進み、垂直保磁力が増大するものと思われ
る。又、イオン銃等を用いた場合には保磁力低下が起こ
る場合があるが、これと異なるのは電子の質量が小さい
為に膜に衝突してもイオンが衝突した場合に見られる様
な衝突カスケードを生成せず、粒界が保存された状態で
基板表面原子の移動可能時間のみが長くなる為と思われ
る。The reason why the vertical coercive force increases due to electron beam irradiation is considered to be as follows. That is, irradiation with the electron beam 9 increases the energy on the surface of the substrate during film formation.
It is thought that since the movable distance of the vapor-deposited atoms attached to the substrate 2 on the film surface becomes longer, the 5-vano Cr polarization progresses toward the grain boundaries, increasing the perpendicular coercive force. Also, when using an ion gun, coercive force may decrease, but this is different from this because the mass of the electron is small, so even if it collides with the membrane, it will not cause a collision like that seen when ions collide. This seems to be due to the fact that only the time during which atoms on the substrate surface can move becomes longer in a state where no cascade is generated and the grain boundaries are preserved.
また、バイアスローラ6にバイアス電圧を印加すること
によって基板2とキャン3は密着しているので、基板2
全体が均一に極めて高温になっているのではなく、基板
厚さ方向の熱流束が増加し、厚み方向の温度勾配が大き
くなっているものと思われ、キャン3を高温にして保磁
力を高めた場合に比べると基板2が受ける熱負荷は小さ
いと考えられる。Further, by applying a bias voltage to the bias roller 6, the substrate 2 and the can 3 are brought into close contact with each other.
It is thought that the entire body is not uniformly extremely hot, but that the heat flux in the thickness direction of the substrate is increasing, and the temperature gradient in the thickness direction is becoming larger.Can 3 is heated to a high temperature and the coercive force is increased. It is considered that the thermal load that the substrate 2 receives is smaller than that in the case where the substrate 2 is exposed to heat.
発明の効果
本発明によれば、同一キャン温度における垂直保磁力を
大きくすることができ、優れた磁気特性を有する垂直磁
気記録媒体を製造することができる。Effects of the Invention According to the present invention, the perpendicular coercivity can be increased at the same can temperature, and a perpendicular magnetic recording medium having excellent magnetic properties can be manufactured.
A−7A-7
第1図は本発明の実施例における全体構成を示す概略図
、第2図はアシスト用電子ビーム電力密度とCo Cr
膜の垂直保磁力の関係を示す図、第3図はアシスト用電
子ビーム電力密度とCoCrNi膜の垂直保磁力の関係
を示す図である。
2・・高分子基板、3・・・・・・キャン、4 ・蒸発
源、8・・・・アシスト用電子銃、9 ・・電子ビーム
。FIG. 1 is a schematic diagram showing the overall configuration in an embodiment of the present invention, and FIG. 2 is a diagram showing assist electron beam power density and CoCr
FIG. 3 is a diagram showing the relationship between the perpendicular coercive force of the CoCrNi film and the assisting electron beam power density. 2. Polymer substrate, 3. Can, 4. Evaporation source, 8. Assisting electron gun, 9. Electron beam.
Claims (1)
板上に、真空蒸着法によってCoとCr又はCoとCr
とNiを主成分とする磁性層を形成する垂直磁気記録媒
体の製造方法において、前記磁性層が形成されつつある
前記高分子基板の表面に電子ビームを照射することを特
徴とする垂直磁気記録媒体の製造方法。Co and Cr or Co and Cr are deposited on a long polymer substrate running along the circumferential side of the cylindrical can by vacuum evaporation.
A method for manufacturing a perpendicular magnetic recording medium in which a magnetic layer containing Ni as a main component is formed, the perpendicular magnetic recording medium comprising: irradiating an electron beam onto the surface of the polymer substrate on which the magnetic layer is being formed. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63196514A JPH0246529A (en) | 1988-08-05 | 1988-08-05 | Method for manufacturing perpendicular magnetic recording media |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63196514A JPH0246529A (en) | 1988-08-05 | 1988-08-05 | Method for manufacturing perpendicular magnetic recording media |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0246529A true JPH0246529A (en) | 1990-02-15 |
Family
ID=16359012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63196514A Pending JPH0246529A (en) | 1988-08-05 | 1988-08-05 | Method for manufacturing perpendicular magnetic recording media |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0246529A (en) |
-
1988
- 1988-08-05 JP JP63196514A patent/JPH0246529A/en active Pending
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