JPH01125561U - - Google Patents
Info
- Publication number
- JPH01125561U JPH01125561U JP1988020455U JP2045588U JPH01125561U JP H01125561 U JPH01125561 U JP H01125561U JP 1988020455 U JP1988020455 U JP 1988020455U JP 2045588 U JP2045588 U JP 2045588U JP H01125561 U JPH01125561 U JP H01125561U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- solid
- transfer electrode
- silicon nitride
- receiving window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 230000001681 protective effect Effects 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
第１図は本考案の固体撮像素子の一実施例の平
面図、第２図は第１図の本考案素子の断面図であ
る。
Ｃ……ＣＣＤチヤンネル、Ｂ……チヤンネル分
離部、Ｐ……光電変換部、Ｗ……受光窓、７……
バツシベーシヨン膜。
FIG. 1 is a plan view of an embodiment of the solid-state imaging device of the present invention, and FIG. 2 is a sectional view of the device of the present invention shown in FIG. C...CCD channel, B...channel separation section, P...photoelectric conversion section, W...light receiving window, 7...
Bathybation membrane.
Claims (1)
護するための窒化シリコンからなる保護膜を形成
した固体撮像素子において、光電変換部上の上記
保護膜をエツチング除去した事を特徴とする固体
撮像素子。 (2) 半導体基体のＣＣＤチヤンネル上に絶縁膜
を介してポリシリコン転送電極が形成された撮像
基板を備え、該基板のＣＣＤチヤンネル上には上
記転送電極に囲まれた受光窓が局部的に配置され
、該受光窓部分を除いた上記転送電極上に窒化シ
リコン膜を形成したことを特徴とするフレームト
ランスフアー型のＣＣＤ固体撮像素子。[Claims for Utility Model Registration] (1) In a solid-state imaging device in which a protective film made of silicon nitride is formed on an imaging substrate having a MOS structure to protect the substrate, the protective film on the photoelectric conversion section is etched. A solid-state image sensor characterized by the removal of (2) An imaging substrate is provided with a polysilicon transfer electrode formed on a CCD channel of a semiconductor substrate via an insulating film, and a light receiving window surrounded by the transfer electrode is locally arranged on the CCD channel of the substrate. A frame transfer type CCD solid-state imaging device, characterized in that a silicon nitride film is formed on the transfer electrode except for the light-receiving window portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988020455U JPH01125561U (en) | 1988-02-18 | 1988-02-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988020455U JPH01125561U (en) | 1988-02-18 | 1988-02-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01125561U true JPH01125561U (en) | 1989-08-28 |
Family
ID=31236837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988020455U Pending JPH01125561U (en) | 1988-02-18 | 1988-02-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01125561U (en) |
-
1988
- 1988-02-18 JP JP1988020455U patent/JPH01125561U/ja active Pending
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