JPH0249143U - - Google Patents
Info
- Publication number
- JPH0249143U JPH0249143U JP12863188U JP12863188U JPH0249143U JP H0249143 U JPH0249143 U JP H0249143U JP 12863188 U JP12863188 U JP 12863188U JP 12863188 U JP12863188 U JP 12863188U JP H0249143 U JPH0249143 U JP H0249143U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- emitter
- punch
- constant voltage
- type constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
第１図、第２図は本考案の実施例の断面図、第
３図は従来例の断面図、および２重ブレークダウ
ンを生ずる界面電荷の発生を説明する図である。
１……Ａｇバンプ、２……保護膜、３……Ａｌ
膜（フイールドプレート）、４……ＣＶＤＳｉＯ
２膜、７……表面電極、１０……Ｐベース層、１
１……Ｎ＋エミツタ層、１２……Ｐ＋ガードリン
グ、１３……Ｎ＋コンタクト層。
FIGS. 1 and 2 are cross-sectional views of an embodiment of the present invention, and FIG. 3 is a cross-sectional view of a conventional example, and a diagram illustrating the generation of interfacial charges that cause double breakdown. 1...Ag bump, 2...Protective film, 3...Al
Membrane (field plate), 4...CVDSiO
2 membrane, 7...surface electrode, 10...P base layer, 1
1...N + emitter layer, 12...P + guard ring, 13...N + contact layer.
Claims (1)
エミツタ層がＰ＋であるＰ＋ＮＰ−なるプレーナ
型トランジスタ構造を有し、ベース層とコレクタ
層とが基板上で表面電極で短絡されているパンチ
スルー型定電圧ダイオードにおいて、前記ベース
層、コレクタ層、および表面電極をおおう酸化膜
上のエミツタ電極バンプ形成の際のメツキ電極を
残しておき、フイールドプレートとしていること
を特徴とするパンチスルー型定電圧ダイオード。 N + PN − where the emitter layer is N + or
In a punch-through type constant voltage diode having a P + NP - planar transistor structure in which the emitter layer is P + and a base layer and a collector layer are short-circuited by a surface electrode on a substrate, the base layer, collector layer A punch-through type constant voltage diode characterized in that a plating electrode formed when forming an emitter electrode bump on an oxide film covering a layer and a surface electrode is left as a field plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12863188U JPH0249143U (en) | 1988-09-29 | 1988-09-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12863188U JPH0249143U (en) | 1988-09-29 | 1988-09-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0249143U true JPH0249143U (en) | 1990-04-05 |
Family
ID=31382153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12863188U Pending JPH0249143U (en) | 1988-09-29 | 1988-09-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0249143U (en) |
-
1988
- 1988-09-29 JP JP12863188U patent/JPH0249143U/ja active Pending
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