JPH0425255U - - Google Patents

Info

Publication number
JPH0425255U
JPH0425255U JP6628690U JP6628690U JPH0425255U JP H0425255 U JPH0425255 U JP H0425255U JP 6628690 U JP6628690 U JP 6628690U JP 6628690 U JP6628690 U JP 6628690U JP H0425255 U JPH0425255 U JP H0425255U
Authority
JP
Japan
Prior art keywords
schottky barrier
substrate
conductivity type
guard ring
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6628690U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6628690U priority Critical patent/JPH0425255U/ja
Publication of JPH0425255U publication Critical patent/JPH0425255U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案を説明する為の断面図、第２図
はダイオードのＶＦ−ＩＦ特性を示す特性図、第
３図は従来例を説明する為の断面図である。 FIG. 1 is a sectional view for explaining the present invention, FIG. 2 is a characteristic diagram showing the VF-IF characteristics of a diode, and FIG. 3 is a sectional view for explaining a conventional example.

Claims (1)

【実用新案登録請求の範囲】 (1) 一導電型の半導体基板と、該基板表面に接
触するバリアメタル電極と、該電極の周縁に対応
して設けられた逆導電型のガードリングとを具備
するシヨツトキーバリア・ダイオードに於いて、 前記ガードリングと前記基板とが形成するＰＮ
接合の近傍に選択的にライフタイムキラー物質を
導入したことを特徴とするシヨツトキーバリア・
ダイオード。 (2) 前記ライフタイムキラー物質は白金である
ことを特徴とする請求項第１項記載のシヨツトキ
ーバリア・ダイオード。[Claims for Utility Model Registration] (1) Comprising a semiconductor substrate of one conductivity type, a barrier metal electrode in contact with the surface of the substrate, and a guard ring of the opposite conductivity type provided around the periphery of the electrode. In the Schottky barrier diode, the guard ring and the substrate form a PN
Schottky barrier, characterized by selectively introducing a lifetime killer substance near the bond.
diode. (2) The Schottky barrier diode according to claim 1, wherein the lifetime killer substance is platinum.
JP6628690U 1990-06-22 1990-06-22 Pending JPH0425255U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6628690U JPH0425255U (en) 1990-06-22 1990-06-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6628690U JPH0425255U (en) 1990-06-22 1990-06-22

Publications (1)

Publication Number Publication Date
JPH0425255U true JPH0425255U (en) 1992-02-28

Family

ID=31598870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6628690U Pending JPH0425255U (en) 1990-06-22 1990-06-22

Country Status (1)

Country Link
JP (1) JPH0425255U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10178186A (en) * 1996-10-15 1998-06-30 Internatl Rectifier Corp High voltage Schottky diode
JP2006228772A (en) * 2005-02-15 2006-08-31 Matsushita Electric Ind Co Ltd Schottky barrier diode and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01239970A (en) * 1988-03-22 1989-09-25 Origin Electric Co Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01239970A (en) * 1988-03-22 1989-09-25 Origin Electric Co Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10178186A (en) * 1996-10-15 1998-06-30 Internatl Rectifier Corp High voltage Schottky diode
JP2006228772A (en) * 2005-02-15 2006-08-31 Matsushita Electric Ind Co Ltd Schottky barrier diode and manufacturing method thereof

Similar Documents

Publication Publication Date Title
JPH0425255U (en)
JPH0265359U (en)
JPS6169851U (en)
JPS6196560U (en)
JPS6169852U (en)
JPS58106954U (en) diode
JPH031548U (en)
JPS62118459U (en)
JPH02146464U (en)
JPS6113955U (en) Zener diode incorporated into integrated circuit
JPH031449U (en)
JPS6194361U (en)
JPS61182049U (en)
JPH01154648U (en)
JPH0412668U (en)
JPH0279064U (en)
JPS62124867U (en)
JPH048451U (en)
JPS61177464U (en)
JPS6316471U (en)
JPS635654U (en)
JPH0292926U (en)
JPH01143152U (en)
JPH0321858U (en)
JPS60166164U (en) shotgun barrier diode