JPH025006U - - Google Patents

Info

Publication number
JPH025006U
JPH025006U JP8329788U JP8329788U JPH025006U JP H025006 U JPH025006 U JP H025006U JP 8329788 U JP8329788 U JP 8329788U JP 8329788 U JP8329788 U JP 8329788U JP H025006 U JPH025006 U JP H025006U
Authority
JP
Japan
Prior art keywords
metal thin
conversion element
thin film
reflected light
detection means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8329788U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8329788U priority Critical patent/JPH025006U/ja
Publication of JPH025006U publication Critical patent/JPH025006U/ja
Pending legal-status Critical Current

Links

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  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例を示す断面概略図、
第2図はその上面概略図。 1……レーザ、2……金属薄膜、4……基台、
7……4分割光電変換素子、11……測定用光電
変換素子。
FIG. 1 is a schematic cross-sectional view showing an embodiment of the present invention;
FIG. 2 is a schematic top view. 1... Laser, 2... Metal thin film, 4... Base,
7...4-split photoelectric conversion element, 11... photoelectric conversion element for measurement.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] フオトレジストを塗布する為の金属薄膜を設け
たガラス基板の上記金属薄膜の膜厚ムラ測定器で
あつて、上記金属薄膜面にレーザ光を照射する手
段と、その反射光の光量を測定する光電変換素子
と、該光電変換素子への上記反射光の照射位置を
検出する位置検出手段とを有し、上記照射位置を
一定にするよう上記位置検出手段の出力に応じて
上記光電変換素子の位置を制御することを特徴と
する金属薄膜の膜厚ムラ測定器。
This is a film thickness unevenness measuring device for a metal thin film on a glass substrate provided with a metal thin film for coating a photoresist, which comprises a means for irradiating a laser beam onto the surface of the metal thin film, and a photoelectric device for measuring the amount of reflected light. It has a conversion element and a position detection means for detecting the irradiation position of the reflected light onto the photoelectric conversion element, and the position of the photoelectric conversion element is determined according to the output of the position detection means so as to keep the irradiation position constant. A film thickness unevenness measuring device for metal thin films, which is characterized by controlling:
JP8329788U 1988-06-23 1988-06-23 Pending JPH025006U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8329788U JPH025006U (en) 1988-06-23 1988-06-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8329788U JPH025006U (en) 1988-06-23 1988-06-23

Publications (1)

Publication Number Publication Date
JPH025006U true JPH025006U (en) 1990-01-12

Family

ID=31308021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8329788U Pending JPH025006U (en) 1988-06-23 1988-06-23

Country Status (1)

Country Link
JP (1) JPH025006U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5646404A (en) * 1979-09-25 1981-04-27 Nec Corp Measuring device of optical film thickness
JPS60242308A (en) * 1984-02-02 1985-12-02 ロ−レンス・エス・キヤニノ Method and device for measuring thickness of thin sample andmethod and device for measuring characteristic of thin sample

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5646404A (en) * 1979-09-25 1981-04-27 Nec Corp Measuring device of optical film thickness
JPS60242308A (en) * 1984-02-02 1985-12-02 ロ−レンス・エス・キヤニノ Method and device for measuring thickness of thin sample andmethod and device for measuring characteristic of thin sample

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