JPH0270461U - - Google Patents

Info

Publication number
JPH0270461U
JPH0270461U JP14987188U JP14987188U JPH0270461U JP H0270461 U JPH0270461 U JP H0270461U JP 14987188 U JP14987188 U JP 14987188U JP 14987188 U JP14987188 U JP 14987188U JP H0270461 U JPH0270461 U JP H0270461U
Authority
JP
Japan
Prior art keywords
titanium
film
aluminum
titanium film
barrier metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14987188U
Other languages
Japanese (ja)
Other versions
JPH0648880Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14987188U priority Critical patent/JPH0648880Y2/en
Publication of JPH0270461U publication Critical patent/JPH0270461U/ja
Application granted granted Critical
Publication of JPH0648880Y2 publication Critical patent/JPH0648880Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明半導体装置の一つの実施例を示
す断面図、第2図は従来例を示す断面図である。 符号の説明、1,2……半導体基板、5……チ
タン膜、6……チタンオキシナイトライド膜、7
……チタン膜、8……バリアメタル、9……電極
(A又はA合金)。
FIG. 1 is a sectional view showing one embodiment of the semiconductor device of the present invention, and FIG. 2 is a sectional view showing a conventional example. Explanation of symbols, 1, 2...Semiconductor substrate, 5...Titanium film, 6...Titanium oxynitride film, 7
...Titanium film, 8...Barrier metal, 9...Electrode (A or A alloy).

Claims (1)

【実用新案登録請求の範囲】 シリコン半導体基板と、アルミニウムあるいは
アルミニウム合金からなる電極との間に、チタン
膜とチタンオキシナイトライド膜とチタン膜から
なる三層構造のバリアメタルを介在させてなる ことを特徴とする半導体装置。
[Claims for Utility Model Registration] A three-layered barrier metal consisting of a titanium film, a titanium oxynitride film, and a titanium film is interposed between a silicon semiconductor substrate and an electrode made of aluminum or an aluminum alloy. A semiconductor device characterized by:
JP14987188U 1988-11-16 1988-11-16 Semiconductor device Expired - Lifetime JPH0648880Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14987188U JPH0648880Y2 (en) 1988-11-16 1988-11-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14987188U JPH0648880Y2 (en) 1988-11-16 1988-11-16 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH0270461U true JPH0270461U (en) 1990-05-29
JPH0648880Y2 JPH0648880Y2 (en) 1994-12-12

Family

ID=31422499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14987188U Expired - Lifetime JPH0648880Y2 (en) 1988-11-16 1988-11-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0648880Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04264719A (en) * 1991-02-19 1992-09-21 Sony Corp Formation of wiring

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04264719A (en) * 1991-02-19 1992-09-21 Sony Corp Formation of wiring

Also Published As

Publication number Publication date
JPH0648880Y2 (en) 1994-12-12

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