JPH027245A - Production of optical information recording medium and apparatus for producing optical information recording medium - Google Patents

Production of optical information recording medium and apparatus for producing optical information recording medium

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Publication number
JPH027245A
JPH027245A JP63156025A JP15602588A JPH027245A JP H027245 A JPH027245 A JP H027245A JP 63156025 A JP63156025 A JP 63156025A JP 15602588 A JP15602588 A JP 15602588A JP H027245 A JPH027245 A JP H027245A
Authority
JP
Japan
Prior art keywords
film
base film
information recording
optical information
recording medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63156025A
Other languages
Japanese (ja)
Inventor
Akira Goto
明 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Maxell Ltd
Original Assignee
Hitachi Maxell Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Maxell Ltd filed Critical Hitachi Maxell Ltd
Priority to JP63156025A priority Critical patent/JPH027245A/en
Publication of JPH027245A publication Critical patent/JPH027245A/en
Pending legal-status Critical Current

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  • Manufacturing Optical Record Carriers (AREA)

Abstract

PURPOSE:To obtain the optical information recording medium which has good recording sensitivity, high CN and low error rate by exposing an underlying film to a plasma atmosphere contg. elements such as hydrogen, oxygen, nitrogen, carbon, and halogen elements after the underlying film is formed on the signal surface of a substrate and before a recording film is formed thereon. CONSTITUTION:The underlying film 4 is formed on the signal pattern 3 forming surface of the substrate 1. This underlying film 4 is formed on an org. compd. such as polytetrafluoroethylene, guanine, hydrocarbon polymerized film or the like. The underlying film 4 is then exposed to the plasma atmosphere A contg. at least one kind of the elements selected from the hydrogen, oxygen, nitrogen, carbon, and halogen elements, by which the underlying film 4 is modified. The polymn. of the underlying film is then accelerated by the energy of the plasma A and the dangling bonds in the underlying film and the elements added in the plasma are bonded to each other, by which the dangling bonds are decreased. The chemical stability and C/N of the underlying film 4 are improved in this way and recording/reproducing errors are decreased.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、光情報記録媒体の製造方法とこれを実施する
に好適な光情報記録媒体の製造装置とに係り、より詳し
くは、ライトワンス形光情報記録媒体における下地膜の
改質方法、および下地膜の改質処理手段を備えた製造装
置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing an optical information recording medium and an apparatus for manufacturing an optical information recording medium suitable for carrying out the method. The present invention relates to a method for modifying a base film in a shaped optical information recording medium, and a manufacturing apparatus equipped with a means for modifying the base film.

〔従来の技術〕[Conventional technology]

従来より、基板と記録膜との間に下地膜を介設したライ
トワンス形の光情報記録媒体が知られている0本願出願
人もこれに関連して、先に、例えばグアニンやポリテト
ラフルオロエチレン、それに炭化水素重合膜などの有機
化合物から成る下地膜が形成された光情報記録媒体を提
案した(特開昭62−219244号、特開昭62−2
19245号、特開昭63−25849号)。
Conventionally, write-once type optical information recording media in which a base film is interposed between a substrate and a recording film have been known. We proposed an optical information recording medium in which a base film made of ethylene and an organic compound such as a hydrocarbon polymer film was formed (Japanese Patent Laid-Open No. 62-219244, Japanese Patent Laid-Open No. 62-2
No. 19245, JP-A-63-25849).

これらの下地膜を備えた光情報記録媒体は、記録感度が
高く、小さなレーザパワーで情報を記録することができ
る。よって、装置の小型化および低コスト化が図れると
ともに、基板の信号面が損傷されにくく、媒体寿命の長
寿命化を図ることができるという利点がある。
Optical information recording media equipped with these base films have high recording sensitivity and can record information with small laser power. Therefore, there are advantages in that the device can be made smaller and lower in cost, the signal surface of the substrate is less likely to be damaged, and the life of the medium can be extended.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

然るに、この後の実験により、この種の光情報記録媒体
には、■書き込まれたピットの周縁部の整形性が悪<、
C/N比が悪い、■ピット内に記録膜の残りかすあるい
は記録膜と下地膜の反応生成物(以下、これら双方を「
残りかす」という。)が残留し、ディスク状光情報記録
媒体の場合、使用中にこの残りかすがデイ・スフ外周部
に移動して外周部における記録/再生エラーが大きくな
る、といった不都合があることが判明した。
However, subsequent experiments revealed that this type of optical information recording medium had poor shaping properties around the edges of written pits.
Poor C/N ratio, ■ Remains of the recording film in the pit or reaction products between the recording film and the underlying film (hereinafter, both of these are referred to as "
"What's left behind?" ) remains, and in the case of a disc-shaped optical information recording medium, it has been found that during use, this residual debris moves to the outer periphery of the disk, increasing recording/reproducing errors at the outer periphery.

本発明は、これら従来技術の問題点を解消し、記録感度
が良好で、しかもCN比が高く、エラー率の低い光情報
記録媒体の製造方法、およびこれを実施するに好適な光
情報記録媒体の製造装置を提供することを目的とするも
のである。
The present invention solves the problems of these conventional techniques and provides a method for manufacturing an optical information recording medium that has good recording sensitivity, a high CN ratio, and a low error rate, and an optical information recording medium suitable for carrying out the method. The purpose of this invention is to provide a manufacturing apparatus for the following.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は、前記の目的を達成するため、基板の信号面に
下地膜を成膜したのち、記録膜を成膜する以前に、前記
下地膜を水素、酸素、窒素、炭素、ハロゲン元素から選
択された少なくとも1種類の元素を含むプラズマ雰囲気
に晒すようにしたことを製法上の特徴とするものである
。
In order to achieve the above object, the present invention forms a base film on a signal surface of a substrate, and then, before forming a recording film, selects the base film from hydrogen, oxygen, nitrogen, carbon, and halogen elements. The manufacturing method is characterized in that it is exposed to a plasma atmosphere containing at least one type of element.

また、下地膜形成室と記録膜形成室との間に、水素、酸
素、窒素、炭素、ハロゲン元素から選択された少なくと
も1種類の導入ガス源が接続されたプラズマ処理室を介
設したことを装置上の特徴とするものである。
Further, a plasma processing chamber connected to at least one type of introduced gas source selected from hydrogen, oxygen, nitrogen, carbon, and halogen elements is interposed between the base film forming chamber and the recording film forming chamber. This is a feature on the device.

〔作用〕[Effect]

下地膜の成膜には、一般に真空蒸着法やスパッタ法、そ
れにプラズマ重合法などの手段が採られるが、これらの
手段によって成膜された下地膜の組成は、純粋な出発物
質とは化学的および物理的性質が大幅に異なる。例えば
、純粋なポリテトラフルオロエチレンは、炭素1つに対
してフッ素が2つ結合しているが、この純粋なポリテト
ラフルオロエチレンをスパッタ成膜して得られる下地膜
は、XPS法(X線光電子分析法)にて分析したところ
、フッ素元素量(F)に対する炭素元素量(C)の比(
F/C)が1.7〜1.9になっている。但し、F/C
の数値のばらつきは、スパッタ条件による。
Generally, methods such as vacuum evaporation, sputtering, and plasma polymerization are used to form the base film, but the composition of the base film formed by these methods is chemically different from that of the pure starting material. and have significantly different physical properties. For example, pure polytetrafluoroethylene has two fluorines bonded to one carbon, but the base film obtained by sputtering this pure polytetrafluoroethylene is When analyzed by photoelectron analysis method), the ratio of the amount of carbon element (C) to the amount of fluorine element (F) (
F/C) is 1.7 to 1.9. However, F/C
The variation in the numerical value depends on the sputtering conditions.

また、下地膜の表面には、遊離したフッ素元素が吸着し
ている。
Furthermore, free elemental fluorine is adsorbed on the surface of the base film.

さらに、示差走査熱量計によって測定したところ、純粋
なポリテトラフルオロエチレンの融点は325℃である
のに対し、下地膜の融点は219゜4℃になっている。
Further, as measured by differential scanning calorimetry, the melting point of pure polytetrafluoroethylene is 325°C, whereas the melting point of the base film is 219°4°C.

これらのデータから、以下のことが推定される。From these data, the following can be inferred.

すなわち、ポリテトラフルオロエチレンをスパッタ成膜
して得られる下地膜は、化学量論的な安定状態になく、
活性な状態になっている。このため、このような下地膜
上に直接記録膜を積層すると。
In other words, the base film obtained by sputtering polytetrafluoroethylene is not in a stable stoichiometric state;
It is in an active state. For this reason, if a recording film is directly laminated on such a base film.

下地膜と記録膜が反応して反応生成物を生じたり、下地
層の表面に付着した活性なフッ素が記録膜中に取り込ま
れるといった現象を生じる。前記反応生成物やフッ素が
取り込まれた記録膜は融点が高くなるなど、純粋な記録
膜に比べて物理的および化学的な性質が異なる。このよ
うに、記録膜中に物理的および化学的な性質が異なる部
分が存在するために、記録時にピットの周縁部がきれい
に整形されなかったり残りかすが残留するといった問題
を生じる。
Phenomena occur in which the underlayer and the recording film react to produce reaction products, and active fluorine attached to the surface of the underlayer is incorporated into the recording film. A recording film incorporating the reaction product or fluorine has different physical and chemical properties than a pure recording film, such as a higher melting point. As described above, the existence of portions with different physical and chemical properties in the recording film causes problems such as the peripheral edges of pits not being neatly shaped during recording and residue remaining.

これに対し、化学的に不安定な状態にある下地層をプラ
ズマ雰囲気に晒すと、そのエネルギによって下地膜の重
合が促進される。また、プラズマ中に水素、酸素、窒素
、炭素、ハロゲン元素から選択された少なくとも1種類
の元素を添加すると、下地膜中のダングリングボンドと
これらの元素が結合し、ダングリングボンドが減少する
。
On the other hand, when a chemically unstable base layer is exposed to a plasma atmosphere, the energy promotes polymerization of the base film. Furthermore, when at least one element selected from hydrogen, oxygen, nitrogen, carbon, and halogen elements is added to the plasma, these elements combine with dangling bonds in the base film, reducing the number of dangling bonds.

その結果、下地膜の化学的安定性が向上して下地膜と記
録膜の反応生成物などが減少し、記録膜の均質性が保持
されて、ピットの整形性が改善されるとともに、残りか
すの減少が図られる。
As a result, the chemical stability of the base film is improved, reaction products between the base film and the recording film are reduced, the homogeneity of the recording film is maintained, the shaping of pits is improved, and residual will be reduced.

〔実施例〕〔Example〕

まず、本発明の概略を第1図ないし第4図に基づいて説
明する。
First, an outline of the present invention will be explained based on FIGS. 1 to 4.

本発明に係る光情報記録媒体の製造方法は、主として、
基板を作製する工程と、基板上に下地膜を成膜する工程
と、下地膜を改質する工程と、改質された下地膜上に記
録膜を積層する工程とから成る。
The method for manufacturing an optical information recording medium according to the present invention mainly includes:
It consists of a step of producing a substrate, a step of forming a base film on the substrate, a step of modifying the base film, and a step of laminating a recording film on the modified base film.

基板は、ガラスなどの透明なセラミックスや、ポリカー
ボネート、ポリメチルメタクリレート、ポリメチルペン
テン、エポキシ等の透明な高分子物質を用いて所望の外
径および寸法に形成される。
The substrate is formed to have a desired outer diameter and dimensions using a transparent ceramic such as glass or a transparent polymeric material such as polycarbonate, polymethyl methacrylate, polymethyl pentene, or epoxy.

そして、その片面には、記録/再生用□放射線ビームを
案内するためのプレグルーブやアドレス信号に対応する
プレピット等の信号パターンが転写される。
A signal pattern such as a pre-groove for guiding a radiation beam for recording/reproduction and a pre-pit corresponding to an address signal is transferred onto one side of the disc.

前記基板の成形方法および信号パターンの転写方法は、
基板材料に応じて適宜の手段が採用される。
The method for molding the substrate and the method for transferring the signal pattern include:
Appropriate means are adopted depending on the substrate material.

例えば、セラミックス製基板やエポキシなどの熱硬化性
樹脂基板については、平板状に形成された基板と所望と
する信号パターンの反転パターンが形成されたスタンパ
と呼称される金型との間で光硬化性樹脂を展伸し、硬化
後、信号パターンが転写された樹脂層を基板側に設ける
所謂2P法(光硬化性樹脂法)が特に適する。第1図(
a)はこの種の基板の断面図であって、基板1の片面に
樹脂層2を介して信号パターン3が形成されている。
For example, for ceramic substrates and thermosetting resin substrates such as epoxy, photocuring is performed between the substrate formed into a flat plate and a mold called a stamper in which an inverted pattern of the desired signal pattern is formed. The so-called 2P method (photocurable resin method) is particularly suitable, in which a resin layer is spread and cured, and then a resin layer to which a signal pattern is transferred is provided on the substrate side. Figure 1 (
A) is a sectional view of this type of substrate, in which a signal pattern 3 is formed on one side of a substrate 1 with a resin layer 2 interposed therebetween.

一方、ポリカーボネートやポリメチルメタクリレートな
どの熱可塑性樹脂基板については、キャビティの片面が
前記スタンパによって形成された金型内に溶融樹脂を射
出する射出成形法が適する。
On the other hand, for thermoplastic resin substrates such as polycarbonate and polymethyl methacrylate, an injection molding method in which a molten resin is injected into a mold in which one side of a cavity is formed by the stamper is suitable.

第1図(b)はこの種の基板の断面図であって、基板1
の片面に信号パターン3が直接形成されている。
FIG. 1(b) is a cross-sectional view of this type of substrate, and the substrate 1
A signal pattern 3 is directly formed on one side of the .

次に、第2図に示すように、この基板1の信号パターン
3形成面に下地膜4を成膜する。この下地膜4は1例え
ばポリテトラフルオロエチレン、グアニン、炭化水素重
合膜などの有機化合物をもって形成される。また、下地
膜4の成膜手段としては、例えば真空蒸着法やスパッタ
法、それにプラズマ重合法など、公知に屈する任意の物
理的成膜法または化学的成膜法から、当該下地膜材料に
合致した適宜の成膜法が採用される。
Next, as shown in FIG. 2, a base film 4 is formed on the surface of the substrate 1 on which the signal pattern 3 is formed. The base film 4 is formed of an organic compound such as polytetrafluoroethylene, guanine, or a hydrocarbon polymer film. The method for forming the base film 4 may be any known physical or chemical film formation method, such as a vacuum evaporation method, a sputtering method, or a plasma polymerization method, that is compatible with the base film material. An appropriate film forming method is adopted.

次に、第3図に示すように、前記下地膜4を、水素、′
N1素、窒素、炭素、ハロゲン元素から選択された少な
くとも1種類の元素を含むプラズマ雰囲気Aに晒し、下
地v4の改質を行う。この場合、下地膜の純度を劣化し
ないため、当該下地膜を構成する元素であって、しかも
前記の元素群から選択された少なくとも1種類の元素を
含むプラズマ雰囲気に晒すこともできる。
Next, as shown in FIG. 3, the base film 4 is coated with hydrogen, '
The underlayer v4 is modified by exposing it to a plasma atmosphere A containing at least one element selected from N1 elements, nitrogen, carbon, and halogen elements. In this case, in order not to deteriorate the purity of the base film, it is possible to expose it to a plasma atmosphere containing at least one element constituting the base film and selected from the above-mentioned group of elements.

なお、ポリテトラフルオロエチレンをスパッタ成膜して
成る下地膜の場合には、水素およびフッ素のうちいずれ
か一方の元素を含むプラズマ雰囲気が最もピットの整形
性の向上およびエラー率の低減に有効である。
In addition, in the case of a base film formed by sputtering polytetrafluoroethylene, a plasma atmosphere containing either hydrogen or fluorine is most effective in improving pit shaping and reducing error rates. be.

このようにすると、プラズマAのエネルギによって下地
膜の重合が促進されるとともに、下地膜中のダングリン
グボンドとプラズマ中に添加された元素とが結合してダ
ングリングボンドが減少し、下地膜4の化学的安定性が
向上する。よって、記録膜と下地膜との反応生成物や、
記録膜内への下地膜材料を構成する元素の取り込みが減
少し、ピットの整形性が改善されてC/N比が向上する
とともに、残りかすの発生が押えられてこれに起因する
記録/再生エラーが低減される。
In this way, the energy of the plasma A promotes the polymerization of the base film, and the dangling bonds in the base film are combined with the elements added to the plasma to reduce the number of dangling bonds, and the base film 4 chemical stability is improved. Therefore, reaction products between the recording film and the underlying film,
The incorporation of elements constituting the base film material into the recording film is reduced, the pit shaping is improved, the C/N ratio is improved, and the generation of residual debris is suppressed, resulting in improved recording/reproduction. Errors are reduced.

最後に、第4図に示すように、前記のようにして改質さ
れた下地膜4上に記録膜5を積層し、光記録単板とする
。記録膜材料としては、例えばテルルを主成分とする低
融点合金や、例えばシアニン系あるいはフタロシアニン
系有機色素など、記録用放射線ビームを照射することに
よって熱的変形を生じる所謂ライトワンス形のヒートモ
ード記録材料が用いられる。この記録膜5の形成手段と
しては、スピン塗布法、真空蒸着法、スパッタ法、電子
ビーム法など公知に属する任意の成膜手段を用いること
ができる。
Finally, as shown in FIG. 4, a recording film 5 is laminated on the base film 4 modified as described above to form an optical recording single plate. Recording film materials include, for example, low-melting point alloys containing tellurium as a main component, cyanine-based or phthalocyanine-based organic dyes, and so-called write-once heat mode recording that undergoes thermal deformation when irradiated with a recording radiation beam. material is used. As a method for forming the recording film 5, any known film forming method such as a spin coating method, a vacuum evaporation method, a sputtering method, an electron beam method, etc. can be used.

なお、前記のようにして光記録単板を形成したのち、記
録膜5の表面に保展膜を設けたり、あるいは前記の記録
単板を貼り合せて両面記録形の光情報記録媒体を構成す
るなどの手段を採ることは任意に行うことができる。
After the optical recording single plate is formed as described above, a preservation film is provided on the surface of the recording film 5, or the recording single plates are bonded together to form a double-sided recording type optical information recording medium. Such measures can be taken at will.

以下、より具体的な実施例を示し、本発明の効果に言及
する。
Hereinafter, more specific examples will be shown and the effects of the present invention will be described.

く第1実施例〉 射出成形法によ−って成形されたポリカーボネート製基
板の信号面に、スパッタ法によってポリテトラフルオロ
エチレン製下地膜を400人の厚さに形成した。下地膜
の成膜条件は、ターゲットが純ポリテトラフルオロエチ
レン、スパッタガスが純アルゴン、スパッタガス圧が4
 X 10−3mbar、投入電力が高周波450Wで
ある。
First Example A base film made of polytetrafluoroethylene was formed to a thickness of 400 mm by sputtering on the signal surface of a polycarbonate substrate molded by injection molding. The conditions for forming the base film are that the target is pure polytetrafluoroethylene, the sputtering gas is pure argon, and the sputtering gas pressure is 4.
X 10-3 mbar, input power is high frequency 450W.

次に、下地膜が形成された基板をプラズマ処理室に移し
、水素が10%添加されたアルゴンガスを含むプラズマ
雰囲気に前記下地膜を晒した。その他のプラズマ処理条
件は、ガス圧を5 X 10−3mbarに、投入電力
を200Wに調整した。
Next, the substrate on which the base film was formed was transferred to a plasma processing chamber, and the base film was exposed to a plasma atmosphere containing argon gas to which 10% hydrogen was added. Other plasma treatment conditions were as follows: gas pressure was adjusted to 5 x 10-3 mbar, and input power was adjusted to 200W.

さらに、前記のようにしてプラズマ処理がなされた下地
膜上に、スパッタ法によってテルル−セレン−鉛合金の
記録膜を約210人の厚さに形成した。記録膜の成膜条
件は、ターゲットがテルル−セレン−鉛合金、スパッタ
ガスが純アルゴン、スパッタガス圧が5×1O−3II
lbar、投入電力が高周波370Wである。
Furthermore, a recording film of tellurium-selenium-lead alloy was formed to a thickness of about 210 mm on the base film subjected to the plasma treatment as described above by sputtering. The conditions for forming the recording film were: the target was a tellurium-selenium-lead alloy, the sputtering gas was pure argon, and the sputtering gas pressure was 5×1O-3II.
lbar, and the input power is high frequency 370W.

最後に、記録膜を結晶化させ反射率の安定化を図るため
、空気中において80℃×1時間のベーク処理を行った
。
Finally, in order to crystallize the recording film and stabilize the reflectance, baking treatment was performed at 80° C. for 1 hour in air.

〈第2実施例〉 前記第1実施例と同様のスパッタ条件の下で下地膜を成
膜したのち、これをプラズマ処理室に移し、CF aガ
スを含むプラズマ雰囲気に前記下地膜を晒した。このと
きのプラズマ処理条件は、ガス圧を3 X 10−3m
barに、また投入電力を350Wに調整した。
Second Example After forming a base film under the same sputtering conditions as in the first example, the base film was transferred to a plasma processing chamber and exposed to a plasma atmosphere containing CFa gas. The plasma treatment conditions at this time were a gas pressure of 3 x 10-3 m.
bar, and the input power was adjusted to 350W.

次いで、この下地膜上にスパッタ法により記録膜を積層
した。記録膜のスパッタ条件も、前記第1実施例の場合
と同様である。
Next, a recording film was laminated on this base film by sputtering. The sputtering conditions for the recording film are also the same as in the first embodiment.

く比較例〉 基板の信号面に下地膜を成膜したのち、プラズマ処理を
施すことなく、下地膜上に記録膜を直接積層した。
Comparative Example> After forming a base film on the signal surface of a substrate, a recording film was directly laminated on the base film without performing plasma treatment.

基板の形成条件、下地膜および記録膜のスパッタ条件は
、前記第1実施例の場合と同様である。
The conditions for forming the substrate and the sputtering conditions for the base film and recording film are the same as in the first embodiment.

走査型電子顕微鏡を用いて、前記第1実施例および第2
実施例の光情報記録媒体に書き込まれたピットを観察し
たところ、いずれもピット周縁部の形状が滑らかで、し
かも残りかすの発生もほとんど認められなかった。
Using a scanning electron microscope, the first example and the second example were
When the pits written on the optical information recording media of the examples were observed, the shape of the pit periphery was smooth in all cases, and almost no residue was observed.

また、記Q/再生装置を用いて前記第1.第2実施例お
よび比較例の光情報記録媒体のC/N比と、光情報記録
媒体の内周部および中周部への書き込みによる外周部で
のエラー率の変化を測定したところ、下表の結果を得た
。
Also, using the above-mentioned Q/playback device, the first. When we measured the C/N ratio of the optical information recording media of the second example and the comparative example and the change in the error rate at the outer periphery due to writing to the inner and middle periphery of the optical information recording medium, the following table shows: The results were obtained.

上表から明らかなように1本発明に係る光情報記録媒体
は、いずれも比較例の光情報記録媒体に比べてノイズレ
ベルが低く、C/N比が高くなっている。また、比較例
の光情報記録媒体が内周部および中周部への書き込みに
よって外周部のエラー率が増加するのに対し、本発明の
光情報記録媒体はいずれもエラー率の増加がない。
As is clear from the above table, the optical information recording medium according to the present invention has a lower noise level and a higher C/N ratio than the optical information recording medium of the comparative example. Further, while the optical information recording medium of the comparative example has an increased error rate in the outer peripheral area due to writing to the inner peripheral area and the middle peripheral area, the error rate does not increase in any of the optical information recording media of the present invention.

次に1本発明の実施に適用される成膜装置について説明
する。
Next, a film forming apparatus applied to the implementation of the present invention will be described.

本発明の成膜装置は、第5図に示すように、予備排気室
11と、下地膜形成室12と、プラズマ処理水13と、
記録膜形成室14と、取り出し室15とがバッファ16
〜19によって連結されており、予備排気室11と第1
のバッファ16との間、および第2のバッファ19と取
り出し室15との間にそれぞれゲートバルブ20.21
が介設されている。前記下地膜形成室12および記録膜
形成室14は、スパッタ装置、真空蒸着装置、あるいは
プラズマ重合装置など、公知に屈する任意の物理的もし
くは化学的成膜装置をもって+1弯成することができる
。この成膜装置には、基板のキャリア(第5図には図示
せず)が内装されており、前記予備排気室11に収納さ
れた基板を順次各室12.13,14を通って取り出し
室15まで搬送するようになっている。
As shown in FIG. 5, the film forming apparatus of the present invention includes a preliminary exhaust chamber 11, a base film forming chamber 12, plasma-treated water 13,
The recording film forming chamber 14 and the take-out chamber 15 are connected to a buffer 16.
~19, and the preliminary exhaust chamber 11 and the first
gate valves 20 and 21 between the second buffer 19 and the second buffer 19 and the take-out chamber 15, respectively.
is interposed. The base film forming chamber 12 and the recording film forming chamber 14 can be formed using any known physical or chemical film forming apparatus such as a sputtering apparatus, a vacuum evaporation apparatus, or a plasma polymerization apparatus. This film forming apparatus is equipped with a substrate carrier (not shown in FIG. 5), and the substrates stored in the preliminary evacuation chamber 11 are sequentially passed through each chamber 12, 13, and 14 to a take-out chamber. It is designed to transport up to 15.

第6図は前記プラズマ処理室13の構成図であって、プ
ラズマ処理室13内のガスを排出する排出口22と、プ
ラズマ処理室13内に水素、v1素、窒素、炭素、ハロ
ゲン元素から選択された少なくとも1種類のガスを導入
するガス導入口23が設けられている。また、プラズマ
処理室13の内部には、基板1を搬送するキ・ヤリア2
4と対向電極25とが配置され、前記キャリア24に高
周波電源26が接続されている。
FIG. 6 is a configuration diagram of the plasma processing chamber 13, including an exhaust port 22 for discharging gas in the plasma processing chamber 13, and an element selected from hydrogen, V1 element, nitrogen, carbon, and halogen element in the plasma processing chamber 13. A gas inlet 23 is provided for introducing at least one type of gas. Also, inside the plasma processing chamber 13, a carrier 2 for transporting the substrate 1 is provided.
4 and a counter electrode 25 are arranged, and a high frequency power source 26 is connected to the carrier 24.

この装置を用いて光情報記録媒体を製造するに当っては
、予じめ下地膜形成室12、プラズマ処理室13.記g
膜形成室14.取り出し室15、それに各バッファ16
〜19を高真空度に真空引きし、ゲートバルブ20.2
1を閉止しておく。
When manufacturing an optical information recording medium using this apparatus, the base film forming chamber 12, the plasma processing chamber 13. Record g
Film formation chamber 14. Removal chamber 15 and each buffer 16
~19 is evacuated to a high degree of vacuum, and the gate valve 20.2 is
1 is closed.

それとともに、キャリア24を予備排気室11に戻して
おく。
At the same time, the carrier 24 is returned to the preliminary exhaust chamber 11.

次に、予備排気室11内に基板1を搬入して、キャリア
24に基板を取り付け、予備排気室11を高真空度に真
空引きする。
Next, the substrate 1 is carried into the pre-evacuation chamber 11, the substrate is attached to the carrier 24, and the pre-evacuation chamber 11 is evacuated to a high degree of vacuum.

予備排気室11が所定の真空度に真空引きされたら、第
1のゲートバルブ20を開いて基板1をバッファ16か
ら下地膜形成室12に搬入し、所望の下地膜を成膜する
。
When the pre-evacuation chamber 11 is evacuated to a predetermined degree of vacuum, the first gate valve 20 is opened, the substrate 1 is carried from the buffer 16 into the base film forming chamber 12, and a desired base film is formed.

下地膜形成後、キャリア24を駆動して基板1をプラズ
マ処理室13に搬入する。ここで、ガス導入口23より
所望のガスを導入しつつ排出口22よりプラズマ処理室
13内のガスを排出し、プラズマ処理室13内のガス圧
を調整する。その後、高周波電源26よりキャリア24
に電力を供給して、対向電極25との間にプラズマを発
生させ、導入されたガスを含むプラズマを下地膜に照射
する。
After forming the base film, the carrier 24 is driven to carry the substrate 1 into the plasma processing chamber 13. Here, while introducing a desired gas through the gas inlet 23, the gas inside the plasma processing chamber 13 is discharged through the exhaust port 22 to adjust the gas pressure inside the plasma processing chamber 13. After that, the carrier 24 is
Electric power is supplied to generate plasma between the electrode 25 and the counter electrode 25, and the base film is irradiated with the plasma containing the introduced gas.

下地膜をプラズマ処理したのち、キャリア24を駆動し
て基板1を記録膜形成室14に搬入し、下地股上に所望
に記録膜を積層する。
After the base film is plasma-treated, the carrier 24 is driven to carry the substrate 1 into the recording film forming chamber 14, and a desired recording film is laminated on the base film.

記録膜形成後、第2のゲートバルブ21を開いて基板l
を取り出し室15に搬入し、取り出し室15内の圧力を
常圧に戻して下地膜および記録膜が成膜された基板lを
取り出す。
After forming the recording film, open the second gate valve 21 and remove the substrate l.
is carried into the take-out chamber 15, the pressure inside the take-out chamber 15 is returned to normal pressure, and the substrate l on which the base film and recording film are formed is taken out.

前記した成膜装置は、下地膜形成室12と記録膜形成室
14との間にプラズマ処理室13を設けたので、下地膜
の成膜、下地膜のプラズマ処理、記録膜の成膜を一連の
工程で行うことができ、生産性が良好である。
In the film forming apparatus described above, the plasma processing chamber 13 is provided between the base film forming chamber 12 and the recording film forming chamber 14, so that the film formation of the base film, the plasma treatment of the base film, and the film formation of the recording film are performed in a series. It can be carried out in the following steps and has good productivity.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明の光情報記録媒体の製造方
法は、下地膜を成膜したのち記録膜を積層する以前に、
下地膜を水素、酸素、窒素、炭素。
As explained above, in the method for manufacturing an optical information recording medium of the present invention, after forming the base film and before laminating the recording film,
The base film is hydrogen, oxygen, nitrogen, and carbon.

ハロゲン元素から選択された少なくとも1種類の元素を
含むプラズマ雰囲気に晒すようにしたので、下地膜の化
学的安定性が向上し、記録膜を侵すことがない。よって
、ピットの整形性が向上してCZN比が向上するととも
に、ピット形成時に生成される残りかすの量が著しく減
少してエラー率の改善が図られる。
Since the base film is exposed to a plasma atmosphere containing at least one element selected from halogen elements, the chemical stability of the base film is improved and the recording film is not corroded. Therefore, the shaping ability of the pits is improved and the CZN ratio is improved, and the amount of residue generated during pit formation is significantly reduced, thereby improving the error rate.

また、本発明の成膜装置は、下地膜形成室と記録膜形成
室との間にプラズマ処理室を設けたので。
Further, the film forming apparatus of the present invention includes a plasma processing chamber between the base film forming chamber and the recording film forming chamber.

下地膜の成膜、下地膜のプラズマ処理、記録膜の成膜を
一連の工程で行うことができ、生産性が良好である。
Formation of the base film, plasma treatment of the base film, and film formation of the recording film can be performed in a series of steps, resulting in good productivity.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図ないし第4図は本発明に係る光情報記録媒体の製
造方法を説明する説明図、第5図は本発明に係る成膜装
置の概略構成図、第6図は成膜装置に備えられたプラズ
マ処理室の断面図である。 1:基板、2:樹脂層、3:信号パターン、4:下地層
、5:記録膜、A:プラズマ°雰囲気、11:予備排久
室、12:下地膜形成室、13:プラズマ処理室、14
:記録膜形成室、15:取り出し室、16〜19:バッ
ファ、20,21:ゲートバルブ、22:排出口、23
:ガス導入口、24:キャリア、25:対向電極、26
:高周波電源。 (C) 第3図
1 to 4 are explanatory diagrams for explaining the method for manufacturing an optical information recording medium according to the present invention, FIG. 5 is a schematic diagram of a film forming apparatus according to the present invention, and FIG. 6 is a diagram showing the equipment for the film forming apparatus. FIG. 1: Substrate, 2: Resin layer, 3: Signal pattern, 4: Base layer, 5: Recording film, A: Plasma atmosphere, 11: Preliminary evacuation chamber, 12: Base film formation chamber, 13: Plasma processing chamber, 14
: recording film forming chamber, 15: take-out chamber, 16-19: buffer, 20, 21: gate valve, 22: discharge port, 23
: Gas inlet, 24: Carrier, 25: Counter electrode, 26
: High frequency power supply. (C) Figure 3

Claims (5)

【特許請求の範囲】[Claims] (1)基板の信号面に下地膜および記録膜を順次積層し
て成る光情報記録媒体の製造方法において、前記下地膜
を成膜したのち、この下地膜を水素、酸素、窒素、炭素
、ハロゲン元素から選択された少なくとも1種類の元素
を含むプラズマ雰囲気に晒し、次いで、このプラズマ処
理済みの下地膜上に前記記録膜を積層するようにしたこ
とを特徴とする光情報記録媒体の製造方法。
(1) In a method for manufacturing an optical information recording medium in which a base film and a recording film are sequentially laminated on the signal surface of a substrate, after forming the base film, the base film is coated with hydrogen, oxygen, nitrogen, carbon, halogen, etc. 1. A method for manufacturing an optical information recording medium, comprising: exposing the medium to a plasma atmosphere containing at least one element selected from elements; and then laminating the recording film on the plasma-treated base film.
(2)請求項1記載の光情報記録媒体の製造方法におい
て、前記下地膜を、スパッタ法、真空蒸着法、プラズマ
重合法から選択された成膜方法にて成膜したことを特徴
とする光情報記録媒体の製造方法。
(2) The method for manufacturing an optical information recording medium according to claim 1, wherein the base film is formed by a film forming method selected from a sputtering method, a vacuum evaporation method, and a plasma polymerization method. A method for manufacturing an information recording medium.
(3)請求項1記載の光情報記録媒体の製造方法におい
て、前記下地膜を、炭素とハロゲン元素とを主成分とす
る有機化合物にて形成したことを特徴とする光情報記録
媒体の製造方法。
(3) The method for manufacturing an optical information recording medium according to claim 1, wherein the base film is formed of an organic compound containing carbon and a halogen element as main components. .
(4)請求項1記載の光情報記録媒体の製造方法におい
て、前記基板上にポリテトラフルオロエチレン製の下地
膜をスパッタ成膜したのち、この下地膜を水素およびフ
ッ素のうちいずれか一方の元素を含むプラズマ雰囲気に
晒すことを特徴とする光情報記録媒体の製造方法。
(4) In the method for manufacturing an optical information recording medium according to claim 1, after forming a base film made of polytetrafluoroethylene on the substrate by sputtering, the base film is coated with one of hydrogen and fluorine. A method for manufacturing an optical information recording medium, which comprises exposing the medium to a plasma atmosphere containing.
(5)少なくとも下地膜形成室と記録膜形成室とを備え
た光情報記録媒体製造用の成膜装置において、前記下地
膜形成室と記録膜形成室との間に、水素、酸素、窒素、
炭素、ハロゲン元素から選択された少なくとも1種類の
導入ガス源が接続されたプラズマ処理室を介設したこと
を特徴とする光情報記録媒体製造用の成膜装置。
(5) In a film forming apparatus for manufacturing an optical information recording medium, which includes at least a base film forming chamber and a recording film forming chamber, hydrogen, oxygen, nitrogen,
1. A film forming apparatus for manufacturing an optical information recording medium, comprising a plasma processing chamber connected to at least one type of introduced gas source selected from carbon and halogen elements.
JP63156025A 1988-06-25 1988-06-25 Production of optical information recording medium and apparatus for producing optical information recording medium Pending JPH027245A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63156025A JPH027245A (en) 1988-06-25 1988-06-25 Production of optical information recording medium and apparatus for producing optical information recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63156025A JPH027245A (en) 1988-06-25 1988-06-25 Production of optical information recording medium and apparatus for producing optical information recording medium

Publications (1)

Publication Number Publication Date
JPH027245A true JPH027245A (en) 1990-01-11

Family

ID=15618668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63156025A Pending JPH027245A (en) 1988-06-25 1988-06-25 Production of optical information recording medium and apparatus for producing optical information recording medium

Country Status (1)

Country Link
JP (1) JPH027245A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH041945A (en) * 1990-04-18 1992-01-07 Nec Corp Production of optical disk medium
US10122080B2 (en) 2014-10-16 2018-11-06 Philips Lighting Holding B.V. Supply cable, a driver arrangement with wireless control function and a control method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH041945A (en) * 1990-04-18 1992-01-07 Nec Corp Production of optical disk medium
US10122080B2 (en) 2014-10-16 2018-11-06 Philips Lighting Holding B.V. Supply cable, a driver arrangement with wireless control function and a control method

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