JPH028054U - - Google Patents

Info

Publication number
JPH028054U
JPH028054U JP1988085714U JP8571488U JPH028054U JP H028054 U JPH028054 U JP H028054U JP 1988085714 U JP1988085714 U JP 1988085714U JP 8571488 U JP8571488 U JP 8571488U JP H028054 U JPH028054 U JP H028054U
Authority
JP
Japan
Prior art keywords
connect
electrical resistor
contact
resistor
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1988085714U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988085714U priority Critical patent/JPH028054U/ja
Publication of JPH028054U publication Critical patent/JPH028054U/ja
Pending legal-status Critical Current

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Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の平面図であり、第2図は第1
図の線−に沿つて見た本考案の断面図であり
、第3図は従来構造の平面図であり、第4図は第
3図の線−に沿つて見た従来構造の断面図で
ある。 2……シリコン単結晶、4……絶縁層、6……
シリコン膜(siliconfilm)、8……
保護薄膜層、10……電気抵抗体、12……接触
面、14……絶縁体、16……接触点、18……
接触体。
Fig. 1 is a plan view of the present invention, and Fig. 2 is a plan view of the present invention.
3 is a plan view of the conventional structure, and FIG. 4 is a sectional view of the conventional structure taken along the line of FIG. be. 2...Silicon single crystal, 4...Insulating layer, 6...
Silicon film, 8...
Protective thin film layer, 10... Electric resistor, 12... Contact surface, 14... Insulator, 16... Contact point, 18...
contact body.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 金属もしくはその合金を利用して電気抵抗体の
接触面と接続して、接触体を負荷抵抗に接続させ
導電接続を形成し、電気抵抗の長さを縮小するこ
とによりメモリ配列密度を向上させたスタチツク
ランダムアクセスメモリ。
A metal or its alloy is used to connect the contact surface of an electrical resistor to connect the contact to the load resistor to form a conductive connection, reducing the length of the electrical resistor and improving memory array density. Static random access memory.
JP1988085714U 1988-06-30 1988-06-30 Pending JPH028054U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988085714U JPH028054U (en) 1988-06-30 1988-06-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988085714U JPH028054U (en) 1988-06-30 1988-06-30

Publications (1)

Publication Number Publication Date
JPH028054U true JPH028054U (en) 1990-01-18

Family

ID=31310367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988085714U Pending JPH028054U (en) 1988-06-30 1988-06-30

Country Status (1)

Country Link
JP (1) JPH028054U (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59207652A (en) * 1983-05-11 1984-11-24 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPS6076157A (en) * 1983-10-03 1985-04-30 Nec Corp Semiconductor device
JPS6245167A (en) * 1985-08-23 1987-02-27 Hitachi Ltd Semiconductor memory device
JPS62118569A (en) * 1985-11-19 1987-05-29 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59207652A (en) * 1983-05-11 1984-11-24 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPS6076157A (en) * 1983-10-03 1985-04-30 Nec Corp Semiconductor device
JPS6245167A (en) * 1985-08-23 1987-02-27 Hitachi Ltd Semiconductor memory device
JPS62118569A (en) * 1985-11-19 1987-05-29 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

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