JPH0284795A - Integrated circuit device - Google Patents

Abstract

(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an integrated circuit device having a multilayer structure.

[Prior art] Conventionally, hybrid integrated circuit devices (hybrid ICs) have been made smaller and smaller.
A thick film multi-circle structure has been adopted to make it lighter. As shown in FIG. 3, this thick film circuit (
A conductor) 2 is formed thereon, a crystalline or amorphous glass 3 as an interlayer insulating material is formed thereon, and a conductor 4. A resistor 5 is formed, and its surface is protected with a protective glass 6 (amorphous glass containing lead silicate as a main component). In FIG. 3, a peer hole 7 is used to electrically connect the layers (between the conductors 2 and 4), and a semiconductor chip 8 is placed on the conductor 4.

[Problem to be solved by the invention] However, as shown in parentheses in FIG. Therefore, due to the difference between the coefficient of thermal expansion of both members 1.3 and the coefficient of thermal expansion of the protective glass 6, a strong tensile stress acts on the protective glass 6 during the cooling process during firing of the protective glass 6.

This stress causes cracks C to occur on the surface of the protective glass 6 near the boundary between the conductor 4 and the resistor 5, as shown in FIG. When this crack C progresses to the inside of the resistor 5, there is a problem in that the resistance value of the resistor 5 changes.

At this time, cracks cannot be prevented simply by bringing the thermal expansion coefficient of the protective glass 6 closer to the thermal expansion coefficient of the glass 3 serving as the interlayer insulating layer.

An object of the present invention is to provide a highly reliable integrated circuit device that suppresses the occurrence of cracks in a protective glass caused by the coefficient of thermal expansion of the material in an integrated circuit device having a multilayer structure.

[Means for Solving the Problems] The present invention provides an integrated circuit device in which a conductor and an insulating material are laminated on a substrate to form a multilayer structure, and the surface of the integrated circuit device is covered with a protective glass. Its gist is an integrated circuit device that avoids dispersing objects.

[Function] Although stress is applied to the protective glass due to the coefficient of thermal expansion of each material, the contaminants dispersed in the protective glass prevent the progression of cracks.

[Embodiment] An embodiment embodying the present invention will be described with reference to the drawings.

The hybrid integrated circuit device of this embodiment is different from that shown in FIG. 3, as shown in FIG. 1, as shown in FIG. The only difference is the portion where the rays are dispersed, and the other portions are the same as shown in FIG.

Figure 2 shows the experimental results. 5 shows the change in resistance value of the protective glass 6 of No. 5 before and after firing. In Figure 2, plot point A has a thermal expansion coefficient of 8.1 Dpm/''
A case in which nothing is dispersed on the protective glass 6 of C is shown.

On the other hand, blower 1 to points B, C, and D have a thermal expansion coefficient of 8. A case is shown in which ceramic filler is dispersed in cold glass 6 of 'lpm/'C. The ceramic filler in this case is composed of zirconia oxide and has a particle size of 0.5 to 2.
We use products molded to micrometers. This zirconia oxide does not chemically react with lead oxide, which is one of the components of the protective glass (non-crystalline glass) 6, even at around 500'C, which is the manufacturing temperature of the product.

Moreover, plot point E shows the case where the protective glass 6 is crystallized by changing the composition of a part thereof.

The diameter of this crystallized glass is 0.5 to 2 μm.

As is clear from FIG. 2, compared to the case where nothing is dispersed in the protective glass 6 (plot point A), by dispersing Relamic filler in the protective glass 6 or making a part of the glass crystallized glass (prop. 1 to point B-E),
The apparent coefficient of thermal expansion of the protective glass 6 can be lowered, and changes in the resistance value of the resistor 5 can be reduced.

Considering this phenomenon, it is possible to reduce the apparent thermal expansion coefficient of the protective glass 6, thereby reducing the tensile stress on the protective glass 6 caused by the thermal expansion coefficient of the material, or the strong resistance of the glass. Because of the compressive stress characteristics, the occurrence of cracks C can be suppressed and changes in the resistance value of the resistor 5 can be reduced.

Furthermore, as shown in FIG. 1, even if a crack C nucleus occurs on the surface of the protective glass 6, its progression is suppressed by the ceramic filler or crystallized glass, and the crack C does not spread any further and reaches the resistor 5. It is considered that this will not be possible.

As described above, in this embodiment, even if a crack C nucleus occurs on the surface of the protective glass 6, its progress is suppressed by the ceramic filler or crystallized glass, and the growth of the protective glass due to the thermal expansion coefficient of the material is suppressed. The occurrence of cracks can be suppressed and reliability can be improved.

The present invention is not limited to the above-mentioned embodiments, and as a contaminant to be dispersed in the protective glass 6, a ceramic filler other than zirconia oxide may be used, or air bubbles may be dispersed.

[Effects of the Invention] As detailed above, according to the present invention, it is possible to suppress the occurrence of cranking of the protective glass due to the coefficient of thermal expansion of the material in an integrated circuit device having a multilayer structure, thereby making the device highly reliable. Demonstrates excellent effects that can be achieved.

[Brief explanation of the drawing]

Fig. 1 is a cross-sectional view of the protective glass in the hybrid integrated circuit device of the example, Fig. 2 is a view showing the experimental results, Fig. 3 is a cross-sectional view of the hybrid integrated circuit device, and Fig. 4 is for explaining the prior art. 1 is a sectional view of a hybrid integrated circuit device of FIG. 1 is an alumina substrate, 2 is a thick film circuit (conductor), 3 is crystalline or amorphous glass, 4 is a conductor, 6 is protective glass, and 9 is a contaminant. Patent applicant Nippondenso Co., Ltd. Agent
Patent Attorney On 1) Hironobu Figure 1 Figure 4 Netsuki Hisagura Kai (ρmon A)

Claims (1)

[Claims] 1. A multilayer structure is created by laminating conductors and insulating materials on a substrate.
1. An integrated circuit device whose surface is covered with a protective glass, characterized in that contaminants are dispersed in the protective glass.