JPH0310401A - Structure for preventing resonance of case - Google Patents

Structure for preventing resonance of case

Info

Publication number
JPH0310401A
JPH0310401A JP1144809A JP14480989A JPH0310401A JP H0310401 A JPH0310401 A JP H0310401A JP 1144809 A JP1144809 A JP 1144809A JP 14480989 A JP14480989 A JP 14480989A JP H0310401 A JPH0310401 A JP H0310401A
Authority
JP
Japan
Prior art keywords
case
circuit
resonance
housing
radio wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1144809A
Other languages
Japanese (ja)
Inventor
Hiroshi Suzuki
寛 鈴木
Haruki Nishida
西田 治樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1144809A priority Critical patent/JPH0310401A/en
Publication of JPH0310401A publication Critical patent/JPH0310401A/en
Pending legal-status Critical Current

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  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

PURPOSE:To suppress the undesired resonance of a case without reducing the high Q of the circuit by providing a gap between an upper ridge of a barrier and an upper face of a case so that the range of the resonance of the case is expanded from one case part to other case part and providing a radio wave absorbing body or a resonance frequency adjustment screw to the inner face of the other case part. CONSTITUTION:An oscillation circuit 55 and an amplifier circuit 56 are separated by a barrier 2 made of a copper alloy material placed upright to a bottom face 14 of a case 1 and the mount space is shielded and separated except the butt connection of a microstrip line. The upper ridge 21 of the barrier 2 is not in contact with the upper face 13 of the case being the inner face of the fixed cover 6 (61) but has a prescribed gap for coupling a microwave and the resonance range of the case is expanded to case parts A11, B12 through the gap. Moreover, a radio wave absorbing body 3 or a frequency adjustment screw 4 is provided onto the inner face of the case part B12. Thus, the undesired case resonance is suppressed without reducing the high Q of the circuit.

Description

【発明の詳細な説明】 〔概 要〕 マイクロ波集積回路で構成する、マイクロ波ユニットに
おける筐体共振防止構造に関し、回路の高いQを低下さ
せずに、不要な筐体共振を抑制する構造を提供すること
を目的とし、筐体内の底面に垂設した隔壁で区切られた
筐体部Aに、マイクロ波集積回路で構成する回路のQが
高い回路Hを、底面に固着させて収容し、隣接する他の
筐体部Bに回路のQの低い回路りを収容する、マイクロ
波ユニットにおいて、回路Hによる筐体共振の領域が、
筐体部への他に筐体部Bにまで拡張する如く、隔壁の上
縁と筐体上面との間に隙間を設け、筐体部Bの内面に電
波吸収体、又は、共振周波数調整ねじを設けるように構
成する。
[Detailed Description of the Invention] [Summary] Regarding a housing resonance prevention structure in a microwave unit configured with a microwave integrated circuit, we have developed a structure that suppresses unnecessary housing resonance without reducing the high Q of the circuit. For the purpose of providing, a circuit H consisting of a microwave integrated circuit and having a high Q is fixedly housed in a casing part A separated by a partition wall vertically provided on the bottom of the casing, and In a microwave unit that accommodates a low-Q circuit in another adjacent housing part B, the area of housing resonance due to the circuit H is
A gap is provided between the upper edge of the partition wall and the upper surface of the housing so that it extends to the housing part B as well as the housing part, and a radio wave absorber or a resonance frequency adjustment screw is installed on the inner surface of the housing part B. The system is configured to provide the following.

〔産業上の利用分野〕[Industrial application field]

本発明は、マイクロ波集積回路(以下MICと略す)で
構成する、マイクロ波帯乃至ミリ波帯(単にマイクロ波
と称する)ユニットにおける筐体共振防止構造に関する
。
The present invention relates to a housing resonance prevention structure in a microwave band to millimeter wave band (simply referred to as microwave) unit configured with a microwave integrated circuit (hereinafter abbreviated as MIC).

電子部品の小形化、高性能化に伴い、マイクロ波の回路
構成にMICが多用され、装置の小形化、高周波化が急
速に促進された。
As electronic components become smaller and have higher performance, MICs are frequently used in microwave circuit configurations, and the miniaturization and higher frequency of devices are rapidly promoted.

MICが各回路別に設けられ、関連する複数回路を1個
の筐体に集合実装させて保守取扱単位のユニットを構成
し、小形、高性能、経済性を図っている。
A MIC is provided for each circuit, and multiple related circuits are collectively mounted in one housing to form a unit for maintenance handling, aiming for compactness, high performance, and economy.

このユニット内でのMICの集合実装に対しては、各M
ICが所期の性能を発揮し、且つ、MIC回路間での特
性的な干渉が起きないことが要求される。
For collective implementation of MICs within this unit, each M
It is required that the IC exhibit the expected performance and that no characteristic interference occurs between the MIC circuits.

〔従来の技術〕[Conventional technology]

第4図(a)に従来の一例のユニットの内部平面図、同
図Φ)に同側断面図を示す。
FIG. 4(a) shows an internal plan view of an example of a conventional unit, and FIG. 4(a) shows a sectional view of the same side.

従来の一例は、第4図に示す如く、誘電体共振器59を
持つ旧C構成の発振回路55と、その出力を増幅する一
IC構成の増幅回路56とを収容する発振器ユニットで
ある。
One conventional example is an oscillator unit that accommodates an oscillation circuit 55 of the old C configuration having a dielectric resonator 59 and an amplifier circuit 56 of one IC configuration that amplifies its output, as shown in FIG.

ユニット構造は、上面を開口した筐体15と、開口上面
を遮蔽する蓋6とから構成され、発振回路55及び増幅
回路56の各MrC基板は、筐体15の底面16に密着
固定させ、マイクロストリップラインの端部を突き当て
、導体接続を行って回路間の接続を行い、増幅回路56
の出力は筐体15の側面に設けたコネクタに接続させて
いる。
The unit structure is composed of a casing 15 with an open top surface and a lid 6 that shields the top surface of the opening. Each MrC board of an oscillation circuit 55 and an amplifier circuit 56 is tightly fixed to the bottom surface 16 of the casing 15. The ends of the strip lines are butted together, conductor connections are made to connect the circuits, and the amplifier circuit 56 is connected.
The output is connected to a connector provided on the side surface of the housing 15.

ここで、発振回路55と増幅回路56とは、筺体15の
底面16に垂設した隔壁25により仕切られ、マイクロ
ストリップラインの突き当て接続部分を除き、遮蔽され
て実装空間が区切っである。
Here, the oscillation circuit 55 and the amplifier circuit 56 are partitioned by a partition wall 25 provided vertically on the bottom surface 16 of the housing 15, and are shielded except for the abutment connection portion of the microstrip line, thereby dividing the mounting space.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、 ■ 発振回路55の筐体部の容積により、使用周波数付
近の周波数で筐体共振を起こすことがある。
However, (1) Due to the volume of the casing of the oscillation circuit 55, casing resonance may occur at frequencies near the operating frequency.

■ この場合、筐体共振を抑圧する必要があり、このた
め、フェライト混合のゴム材等からなる電波吸収体35
を、発振回路55の筐体部の内壁で、吸収効果の上がる
位置に接着固定して吸収抑圧させる。
■ In this case, it is necessary to suppress the housing resonance, and for this reason, a radio wave absorber 35 made of ferrite-mixed rubber material, etc.
is adhesively fixed on the inner wall of the casing of the oscillation circuit 55 at a position where the absorption effect is enhanced to suppress absorption.

■ しかし、電波吸収体35が誘電体共振器59に近づ
いて取付けられた場合には、発振回路55の高いQを低
下させてしまう。
(2) However, if the radio wave absorber 35 is installed close to the dielectric resonator 59, the high Q of the oscillation circuit 55 will be lowered.

等の問題点がある。There are other problems.

本発明は、かかる問題点に鑑みて、回路の高いQを低下
させずに、不要な筐体共振を抑制する構造を提供するこ
とを目的としている。
In view of these problems, it is an object of the present invention to provide a structure that suppresses unnecessary casing resonance without reducing the high Q of the circuit.

〔課題を解決するための手段〕[Means to solve the problem]

上記問題点は、第1図に示す如く、 筐体l内の底面14に垂設した隔壁2で区切られた筐体
部Allに、マイクロ波集積回路で構成する回路のQが
高い回路H51を、底面14に固着させて収容し、隣接
する他の筐体部B12に回路のQの低い回路L52を収
容する、マイクロ波ユニットにおいて、回路H51によ
る筐体共振の領域が、筐体部Allの他に筐体部B12
にまで拡張する如く、隔壁2の上縁21と筐体上面13
との間に隙間を設け、筐体部B12の内面に電波吸収体
3、又は、周波数調整ねじ4を設けた、本発明の筐体共
振防止構造により解決される。
The above problem is solved by installing a circuit H51 with a high Q of a microwave integrated circuit in the housing section All, which is divided by the partition wall 2 vertically installed on the bottom surface 14 of the housing L, as shown in FIG. In a microwave unit that is fixedly housed on the bottom surface 14 and houses a low-Q circuit L52 in another adjacent housing part B12, the area of housing resonance due to the circuit H51 is in the housing part All. In addition, housing part B12
The upper edge 21 of the partition wall 2 and the upper surface 13 of the casing
This problem is solved by the housing resonance prevention structure of the present invention, in which a gap is provided between the housing part B12 and a radio wave absorber 3 or a frequency adjustment screw 4 is provided on the inner surface of the housing part B12.

(作 用) 第1図に本発明のユニットの側断面図、第5図にQの低
下特性例を示す。
(Function) FIG. 1 shows a side sectional view of the unit of the present invention, and FIG. 5 shows an example of Q reduction characteristics.

即ち、第1図に示す如く、回路のQが高い回路H51を
収容する筐体部Allが、前述の従来例の如く、隔壁2
の上縁21が筐体上面13と導通した、完全遮蔽状態で
の筐体共振モードと、本発明により、隙間を設けて、筐
体部B12も筐体共振領域に含めた場合の筐体共振モー
ドとでは、明かに異なり、隙間を設けた場合は、筐体部
B12の筐体の状況(大きさ、形状、電波吸収体の有無
)により、筐体共振状況(共振の有無、共振周波数)が
変わる。
That is, as shown in FIG. 1, the housing section All housing the circuit H51 with a high circuit Q is connected to the partition wall 2 as in the prior art example described above.
The housing resonance mode in a completely shielded state where the upper edge 21 is electrically connected to the housing top surface 13, and the housing resonance when the housing part B12 is also included in the housing resonance area by providing a gap according to the present invention. It is clearly different from the mode, and when a gap is provided, the casing resonance situation (presence or absence of resonance, resonant frequency) depends on the casing situation (size, shape, presence or absence of a radio wave absorber) of the casing part B12. changes.

一方、筐体部Allでは、Qの高い回路H51が用いら
れているわけであるが、隔壁2の上側が空いていても略
Qは筐体部All内の部屋の状況で決まり、隔壁2の向
う側の筐体部B12がどうなっていようと影響は余り受
けずQは下がらない。
On the other hand, in the case All, the circuit H51 with a high Q is used, but even if the upper side of the partition wall 2 is open, approximately Q is determined by the situation of the room inside the case All. No matter what happens to the housing section B12 on the other side, it will not be affected much and the Q will not drop.

従って、筐体部B12に電波吸収体3を置けば、筐体部
All内の共振回路のQは下がらないが、筐体部A11
〜筐体部12の両方で決まる筐体共振を抑えることが出
来る。
Therefore, if the radio wave absorber 3 is placed in the casing part B12, the Q of the resonant circuit in the casing part All will not decrease;
- It is possible to suppress the casing resonance determined by both the casing parts 12.

又、電波吸収体3の代わりに、共振周波数調整ね!;4
を筐体部B12に設けて調整することによっても、筐体
共振による影響を無視出来る程に抑制することが可能で
ある。
Also, instead of the radio wave absorber 3, adjust the resonance frequency! ;4
It is also possible to suppress the influence of the housing resonance to a negligible level by providing and adjusting it in the housing part B12.

この共振周波数調整ねじ4は、例えば電界と同方向に壁
面に垂設した金属ねしで、この長さを調整して共振モー
ドを影響のない方向にずらし得る。
This resonant frequency adjustment screw 4 is, for example, a metal screw installed vertically on the wall in the same direction as the electric field, and by adjusting its length, the resonant mode can be shifted in a direction that has no influence.

又、この共振周波数調整ねじ4が、部品の高いQを下げ
るものであっても、前記共振吸収体3の場合と同じ様に
、筐体部AllのQの高い回路H51に影響を与えない
。
Further, even if the resonance frequency adjustment screw 4 lowers the high Q of the component, it does not affect the high Q circuit H51 of the housing section All, as in the case of the resonance absorber 3.

尚、電波吸収体3又は共振周波数調整ねじ4を取付ける
回路L52では、回路のQは当然低下するが、元々低(
、Qを問題にしない回路であれば問題はない。
In addition, in the circuit L52 where the radio wave absorber 3 or the resonance frequency adjustment screw 4 is attached, the Q of the circuit naturally decreases, but it is originally low (
, Q will not be a problem if it is a circuit that does not matter.

かくして、高い回路のQを低下させずに、不要な筐体共
振を抑制する方法を提供することが可能となる。
In this way, it is possible to provide a method for suppressing unnecessary housing resonance without reducing the high Q of the circuit.

〔実施例〕〔Example〕

以下図面に示す実施例によって本発明を具体的に説明す
る。全図を通し同一符号は同一対象物を示す。第2図に
本発明の第一実施例の構成斜視図、第3図に本発明の第
二実施例の側断面図を示す。
The present invention will be specifically described below with reference to embodiments shown in the drawings. The same reference numerals indicate the same objects throughout the figures. FIG. 2 shows a perspective view of the structure of a first embodiment of the invention, and FIG. 3 shows a side sectional view of a second embodiment of the invention.

本実施例は何れも、前述の従来例と同じ、Qの高い誘電
体共振器59を持つMIC構成の発振回路55と、その
出力を増幅するMIC構成のQの低い増幅回路56とを
収容する発振器ユニットである。
Both of the present embodiments accommodate an MIC-configured oscillation circuit 55 having a high-Q dielectric resonator 59 and a MIC-configured low-Q amplifier circuit 56 that amplifies the output, the same as in the conventional example described above. It is an oscillator unit.

第一実施例は電波吸収体3を用い、第二実施例では共振
周波数調整ばね4を用いたものである。
The first embodiment uses a radio wave absorber 3, and the second embodiment uses a resonant frequency adjustment spring 4.

ユニット構造は、上面を開口した銅合金材の筐体lと、
開口上面を遮蔽する同村の蓋6.61とから構成され、
発振回路55及び増幅回路56の各旧C基板は、筐体1
の底面14に密着固定させ、マイクロストリップライン
の端部を突き当て、導体接続を行って回路間の接続を行
い、増幅回路56の出力は筐体1の側面に設けたコネク
タに接続している。
The unit structure consists of a copper alloy casing with an open top,
Consisting of a lid 6.61 of the same village that shields the top surface of the opening,
Each old C board of the oscillation circuit 55 and amplifier circuit 56 is installed in the housing 1.
The end of the microstrip line is brought into contact with the bottom surface 14 of the housing 1, and the conductor connection is made to connect the circuits, and the output of the amplifier circuit 56 is connected to the connector provided on the side surface of the housing 1. .

ここで、発振回路55と増幅回路56とは、筺体lの底
面14に垂設した銅合金材の隔壁2により仕切られ、マ
イクロストリップラインの突き当て接続部分を除き、遮
蔽されて実装空間が区切っである。
Here, the oscillation circuit 55 and the amplifier circuit 56 are separated by a partition wall 2 made of a copper alloy material that is vertically installed on the bottom surface 14 of the casing 1, and are shielded except for the butt connection portion of the microstrip line to separate the mounting space. It is.

この隔壁2の上縁21は、固定された蓋6.61の内側
面の筐体上面13とは接触導通ずることなく、マイクロ
波結合可能な幅に所定の隙間が空くようにしてあり、筐
体共振がこの隙間を通して筐体部A11と筐体部B12
とに領域が拡張されて行われる。
The upper edge 21 of this partition wall 2 does not come in contact with the top surface 13 of the casing on the inside surface of the fixed lid 6.61, leaving a predetermined gap wide enough to allow microwave coupling. Body resonance passes through this gap between the housing portion A11 and the housing portion B12.
The area will be expanded and carried out.

又、第一実施例は、第2図に示す如く、フェライト混合
のゴム材の電波吸収体3を、拡張された筐体部B12の
、吸収効果が大なる位置に接着固定させる。
Further, in the first embodiment, as shown in FIG. 2, the radio wave absorber 3 made of a ferrite-mixed rubber material is adhesively fixed to a position of the expanded housing portion B12 where the absorption effect is large.

第二実施例は、第3図に示す如く、Mo2の筐体部B1
2の領域で、調整効果が大なる位置に、細ねじの筐体共
振周波数調整ねじ4を垂直に螺入させており、螺大長を
調整して、筐体共振モードを影響のない周波数にずらし
てしまう。
In the second embodiment, as shown in FIG.
In the region 2, a thin housing resonance frequency adjustment screw 4 is screwed vertically into the position where the adjustment effect is large, and by adjusting the screw length, the housing resonance mode is adjusted to a frequency that has no effect. I'll shift it.

上記実施例は一例を示し、回路H51と回路L52とを
、発振回路と増幅回路とに限定するものではなく、Qの
高い回路と低い回路の組合せなら何でも良く、例えば、
Qの高い回路としてフィルタ回路、ディスクリミネータ
回路、低い回路として逓倍回路、分周回路等の組合せで
も良い。
The above embodiment shows an example, and the circuit H51 and the circuit L52 are not limited to an oscillation circuit and an amplifier circuit, and any combination of a high Q circuit and a low Q circuit may be used.
A combination of a filter circuit, a discriminator circuit, a high Q circuit, a multiplier circuit, a frequency divider circuit, etc., may be used as a low Q circuit.

又、各部の材質は上記のものに限定するものではない。Moreover, the materials of each part are not limited to those mentioned above.

(発明の効果] 以上の如く、本実施例を8GHz帯について実施し、好
結果を得ており、−船釣に、複数個の旧Cを集合実装す
るマイクロ波/ミリ波ユニットにおいて、高い回路のQ
を低下させずに、不要な筐体共振を抑制する方法が得ら
れ、その効果は著しい。
(Effects of the invention) As described above, this embodiment has been implemented in the 8 GHz band, and good results have been obtained. Q of
A method for suppressing unnecessary casing resonance without reducing the oscillation is obtained, and the effect is remarkable.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明のユニットの側断面図、第2図は本発明
の第一実施例の構成斜視図、第3図は本発明の第二実施
例の側断面図、第4図は従来の一例のユニット、 第5図はQの低下特性例である。 図において、 1.15は筐体、    2.25は隔壁、3.35は
電波吸収体、 4は共振周波数調整ねじ、6.61は蓋
、     11は筐体部A、12は筐体部B、   
13は上面、 14.16は底面、   21は上縁、51は回路H1
52は回路し、 55は発振回路、   56は増幅回路、59は誘電体
共振器である。 水亀明の第二大施ザ・1f)彌・I断面図第 3 ズ ユニーlトの優生面図 第 1 図 一一◆ユ范間 Qのイ氏下特4生び」 第5 ■ (a) 内野平面図 4珂り断面しfl 従来の一例のユニ・ト 箒4 図
Fig. 1 is a side sectional view of the unit of the present invention, Fig. 2 is a perspective view of the structure of the first embodiment of the invention, Fig. 3 is a side sectional view of the second embodiment of the invention, and Fig. 4 is a conventional FIG. 5 shows an example of the Q decreasing characteristic of an example unit. In the figure, 1.15 is the housing, 2.25 is the bulkhead, 3.35 is the radio wave absorber, 4 is the resonance frequency adjustment screw, 6.61 is the lid, 11 is the housing part A, and 12 is the housing part B. ,
13 is the top surface, 14.16 is the bottom surface, 21 is the top edge, 51 is the circuit H1
52 is a circuit, 55 is an oscillation circuit, 56 is an amplifier circuit, and 59 is a dielectric resonator. Mizuki Akira's Second Daishiza 1f) Yai I Cross-sectional view No. 3 Zuunilt's eugenic surface drawing No. 1 Figure 11 ) Infield floor plan 4 cut section fl An example of conventional unit-to-broom 4 Figure

Claims (1)

【特許請求の範囲】  筐体(1)内の底面(14)に垂設した隔壁(2)で
区切られた筺体部A(11)に、マイクロ波集積回路で
構成する回路のQが高い回路H(51)を、該底面(1
4)に固着させて収容し、隣接する他の筐体部B(12
)に回路のQの低い回路L(52)を収容する、マイク
ロ波ユニットにおいて、 該回路H(51)による筐体共振の領域が、該筺体部A
(11)の他に該筺体部B(12)にまで拡張する如く
、該隔壁(2)の上縁(21)と筺体上面(13)との
間に隙間を設け、該筺体部B(12)の内面に電波吸収
体(3)、又は、共振周波数調整ねじ(4)を設けるこ
とを特徴とする筐体共振防止構造。
[Claims] A high Q circuit constituted by a microwave integrated circuit is installed in the housing part A (11) separated by a partition wall (2) vertically installed on the bottom surface (14) in the housing (1). H (51), the bottom surface (1
4) and housed in the other adjacent housing part B (12).
), the area of casing resonance due to the circuit H (51) is located in the casing portion A.
In addition to (11), a gap is provided between the upper edge (21) of the partition wall (2) and the upper surface of the housing (13) so as to extend to the housing part B(12). ) A housing resonance prevention structure characterized in that a radio wave absorber (3) or a resonance frequency adjustment screw (4) is provided on the inner surface of the housing.
JP1144809A 1989-06-07 1989-06-07 Structure for preventing resonance of case Pending JPH0310401A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1144809A JPH0310401A (en) 1989-06-07 1989-06-07 Structure for preventing resonance of case

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1144809A JPH0310401A (en) 1989-06-07 1989-06-07 Structure for preventing resonance of case

Publications (1)

Publication Number Publication Date
JPH0310401A true JPH0310401A (en) 1991-01-18

Family

ID=15370968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1144809A Pending JPH0310401A (en) 1989-06-07 1989-06-07 Structure for preventing resonance of case

Country Status (1)

Country Link
JP (1) JPH0310401A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1022672A (en) * 1996-07-08 1998-01-23 Iwaki Electron Corp Ltd High frequency module
JP2007214443A (en) * 2006-02-10 2007-08-23 Nec Corp Enclosure and electronics
JP2012009675A (en) * 2010-06-25 2012-01-12 Mitsubishi Electric Corp High frequency semiconductor package

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1022672A (en) * 1996-07-08 1998-01-23 Iwaki Electron Corp Ltd High frequency module
JP2007214443A (en) * 2006-02-10 2007-08-23 Nec Corp Enclosure and electronics
JP2012009675A (en) * 2010-06-25 2012-01-12 Mitsubishi Electric Corp High frequency semiconductor package

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