JPH03124663U - - Google Patents
Info
- Publication number
- JPH03124663U JPH03124663U JP3220090U JP3220090U JPH03124663U JP H03124663 U JPH03124663 U JP H03124663U JP 3220090 U JP3220090 U JP 3220090U JP 3220090 U JP3220090 U JP 3220090U JP H03124663 U JPH03124663 U JP H03124663U
- Authority
- JP
- Japan
- Prior art keywords
- diode
- extraction electrode
- anode
- cathode
- shot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims 10
- 239000010410 layer Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
第１図は本発明のシヨツトキダイオードが集積
された半導体装置の一実施例の平面図、第２図は
第１図の等価回路図、第３図は第１図におけるＡ
−Ａ線に沿う断面図、第４図は従来例の平面図、
第５図は第４図の等価回路図、第６図は他の従来
例の平面図、第７図は第６図の等価回路図である
。
１……島領域、２……シヨツトキダイオードの
アノード、３……シヨツトキ接合、４……第１層
のＡｌ配線、５……層間絶縁膜のスルーホール、
６……第２層のＡｌ配線、８……高抵抗Ｐ型シリ
コン基板、９……埋込層、１０……エピタキシヤ
ル層、１１……アイソレーシヨン層、１２……フ
イード酸化膜、１３……金属（Ｍｏ等）、１４…
…第１のパツド、１５……第２のパツド、１６…
…第３のパツド、１７……第４のパツド、１８…
…第５のパツド、１９……第６のパツド、２４…
…低抵抗層、Ｄ１〜Ｄ４……シヨツトキダイオー
ド。
FIG. 1 is a plan view of an embodiment of a semiconductor device in which the shotgun diode of the present invention is integrated, FIG. 2 is an equivalent circuit diagram of FIG. 1, and FIG. 3 is an A in FIG.
- A cross-sectional view along line A, FIG. 4 is a plan view of the conventional example,
5 is an equivalent circuit diagram of FIG. 4, FIG. 6 is a plan view of another conventional example, and FIG. 7 is an equivalent circuit diagram of FIG. 6. 1... Island region, 2... Anode of Schottky diode, 3... Schottky junction, 4... Al wiring of first layer, 5... Through hole of interlayer insulating film,
6... Second layer Al wiring, 8... High resistance P-type silicon substrate, 9... Buried layer, 10... Epitaxial layer, 11... Isolation layer, 12... Feed oxide film, 13 ...Metal (Mo etc.), 14...
...First pad, 15...Second pad, 16...
...Third pad, 17...Fourth pad, 18...
...5th pad, 19...6th pad, 24...
...Low resistance layer, D1-D4...Shotki diode.
Claims (1)
Ｄ１と、第２のシヨツトキダイオードＤ２と、第
３のシヨツトキダイオードＤ３と、第４のシヨツ
トキダイオードＤ４とが形成されており、 前記第１のシヨツトキダイオードＤ１のアノー
ドおよびカソードにはそれぞれ、第１の引出し電
極１４、第２の引出し電極１５が接続されており
、 前記第２のシヨツトキダイオードＤ２のアノー
ドおよびカソードにはそれぞれ、第３の引出し電
極１６、第４の引出し電極１７が接続されており
、 前記第３のダイオードＤ３のアノードには、第
５の引出し電極１８が接続されており、カソード
は、前記第１のダイオードＤ１のアノードと第１
の引出し電極１４との共通接続点に接続されてお
り、 前記第４のダイオードＤ４のアノードには、第
６の引出し電極１９が接続されており、カソード
は、前記第２のダイオードＤ２のアノードと第３
の引出し電極１６との共通接続点に接続されてお
り、 前記第１の引出し電極１４と第５の引出し電極
１８とを結ぶ経路と、前記第３の引出し電極１６
と第６の引出し電極１９とを結ぶ経路とは交差し
ているシヨツトキダイオードが集積された半導体
装置。[Claims for Utility Model Registration] A first shot diode D1, a second shot diode D2, a third shot diode D3, and a fourth shot diode D4 are formed on a semiconductor substrate. A first extraction electrode 14 and a second extraction electrode 15 are connected to the anode and cathode of the first Schottky diode D1, respectively, and the anode and cathode of the second Schottky diode D2 are connected to each other. A third extraction electrode 16 and a fourth extraction electrode 17 are connected to the cathode, respectively. A fifth extraction electrode 18 is connected to the anode of the third diode D3. the anode of the first diode D1 and the first
A sixth lead electrode 19 is connected to the anode of the fourth diode D4, and a cathode is connected to the anode of the second diode D2. Third
The path connecting the first extraction electrode 14 and the fifth extraction electrode 18 and the third extraction electrode 16 are connected to a common connection point with the extraction electrode 16.
A semiconductor device in which Schottky diodes are integrated, which intersect with the path connecting the and the sixth extraction electrode 19.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3220090U JPH03124663U (en) | 1990-03-28 | 1990-03-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3220090U JPH03124663U (en) | 1990-03-28 | 1990-03-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03124663U true JPH03124663U (en) | 1991-12-17 |
Family
ID=31535127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3220090U Pending JPH03124663U (en) | 1990-03-28 | 1990-03-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03124663U (en) |
-
1990
- 1990-03-28 JP JP3220090U patent/JPH03124663U/ja active Pending
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