JPH0312475B2 - - Google Patents

Info

Publication number
JPH0312475B2
JPH0312475B2 JP55043771A JP4377180A JPH0312475B2 JP H0312475 B2 JPH0312475 B2 JP H0312475B2 JP 55043771 A JP55043771 A JP 55043771A JP 4377180 A JP4377180 A JP 4377180A JP H0312475 B2 JPH0312475 B2 JP H0312475B2
Authority
JP
Japan
Prior art keywords
crystal silicon
single crystal
insulating layer
layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55043771A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56140662A (en
Inventor
Koji Nomura
Masahiko Ueda
Yasuhiro Funakoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4377180A priority Critical patent/JPS56140662A/ja
Publication of JPS56140662A publication Critical patent/JPS56140662A/ja
Publication of JPH0312475B2 publication Critical patent/JPH0312475B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Recrystallisation Techniques (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP4377180A 1980-04-02 1980-04-02 Manufacture of field effect semiconductor of insulation gate complementary type Granted JPS56140662A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4377180A JPS56140662A (en) 1980-04-02 1980-04-02 Manufacture of field effect semiconductor of insulation gate complementary type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4377180A JPS56140662A (en) 1980-04-02 1980-04-02 Manufacture of field effect semiconductor of insulation gate complementary type

Publications (2)

Publication Number Publication Date
JPS56140662A JPS56140662A (en) 1981-11-04
JPH0312475B2 true JPH0312475B2 (de) 1991-02-20

Family

ID=12673007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4377180A Granted JPS56140662A (en) 1980-04-02 1980-04-02 Manufacture of field effect semiconductor of insulation gate complementary type

Country Status (1)

Country Link
JP (1) JPS56140662A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60127740A (ja) * 1983-12-15 1985-07-08 Matsushita Electric Ind Co Ltd 半導体集積回路装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5153488A (ja) * 1974-11-06 1976-05-11 Hitachi Ltd Handotaishusekikairoyokibanno seiho
JPS52113684A (en) * 1976-03-19 1977-09-22 Matsushita Electric Ind Co Ltd Semiconductor device
JPS53110479A (en) * 1977-03-09 1978-09-27 Fujitsu Ltd Production of semiconductor device
JPS5519831A (en) * 1978-07-28 1980-02-12 Toshiba Corp Semiconductor device manufacturing method
JPS55154744A (en) * 1979-05-21 1980-12-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS5679472A (en) * 1979-12-04 1981-06-30 Toshiba Corp Preparing method of mos-type semiconductor device
JPS56116627A (en) * 1980-02-20 1981-09-12 Chiyou Lsi Gijutsu Kenkyu Kumiai Thin film semiconductor device

Also Published As

Publication number Publication date
JPS56140662A (en) 1981-11-04

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