JPH03132111A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH03132111A
JPH03132111A JP1270883A JP27088389A JPH03132111A JP H03132111 A JPH03132111 A JP H03132111A JP 1270883 A JP1270883 A JP 1270883A JP 27088389 A JP27088389 A JP 27088389A JP H03132111 A JPH03132111 A JP H03132111A
Authority
JP
Japan
Prior art keywords
circuit
output
signal
test
test result
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1270883A
Other languages
Japanese (ja)
Inventor
Yasukazu Ota
太田 康和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC IC Microcomputer Systems Co Ltd filed Critical NEC IC Microcomputer Systems Co Ltd
Priority to JP1270883A priority Critical patent/JPH03132111A/en
Publication of JPH03132111A publication Critical patent/JPH03132111A/en
Pending legal-status Critical Current

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  • Logic Circuits (AREA)
  • Tests Of Electronic Circuits (AREA)

Abstract

PURPOSE:To prevent a delay time from increasing even when a test circuit is incorporated by providing plural output circuits receiving a test result signal or a function logic signal, supplying a relevant output signal to a common output terminal and having a midpoint of CMOS transistors(TRs) reaching a high impedance state with a control signal. CONSTITUTION:Midpoints Md, Mt of CMOS TRs of an output circuit 1 outputting an output signal Sd corresponding to a function logic signal SD and an output circuit 2 outputting an output signal St corresponding to a test result signal ST are connected to an output terminal Do. One circuit is neglected by fixing an inverse of OET input or an inverse of OE input to a high level. That is, the output circuit 1 is similar to a circuit in the absence of the test circuit 4 substantially and no excess selection circuit is provided, then the delay time is saved. Thus, the state of the test circuit 4 is outputted without increasing the delay time.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置に関し、特にテスト回路を内蔵した
半導体装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a semiconductor device incorporating a test circuit.

〔従来の技術〕[Conventional technology]

第3図に示すように従来、テスト回路4を内蔵した半導
体装置は、その半導体装置の本来の機能を動作させる機
能回路3の機能論理信号SI)を受ける入力端りとテス
ト回路4のテスト結果信号STを受ける入力端Tを有し
、その両信号SD、STのいずhかを制御信号CIl 
C2によって選択する選択回路1.と出力回路1とを直
列にした選択出力回路21を有していた。
As shown in FIG. 3, conventionally, a semiconductor device incorporating a test circuit 4 has an input terminal that receives a functional logic signal SI) of a functional circuit 3 that operates the original function of the semiconductor device, and a test result of the test circuit 4. It has an input terminal T that receives a signal ST, and either one of the two signals SD or ST is connected to a control signal CIl.
Selection circuit 1 selected by C2. It had a selection output circuit 21 in which the output circuit 1 and the output circuit 1 were connected in series.

出力回路lの0MO8の中点Mうば、制御信号ピーダン
スの王状態のいずれかとなる。
The middle point M of 0MO8 of the output circuit 1 is one of the king states of the control signal pedance.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の半導体装置は、本来の動作状態とテスト
状態を選択・合成する論理回路を有しているので、テス
ト回路を内蔵しない場合に比べ選択回路分の論理段数が
増加する。
Since the conventional semiconductor device described above has a logic circuit that selects and combines the original operating state and the test state, the number of logic stages for the selection circuit increases compared to a case where the test circuit is not built-in.

したがって機能論理信号は前記論理回路を通過する分だ
け遅延時間が増加して出力するという欠点があり、これ
は近年の高速動作の要求に対して特に障害となっていた
Therefore, the functional logic signal has the disadvantage that the delay time is increased by the amount of time it passes through the logic circuit before being output, and this has been a particular obstacle to the recent demands for high-speed operation.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体装置は、内部の機能論理信号またはテス
ト結果信号を入力してそれぞれに対応する出力信号を共
通の外部出力端子に供給し、かつ制御信号によって高イ
ンピーダンス状態になる0MO3)ランジスタの中点を
有する複数の出力回路を含んで構成されている。
The semiconductor device of the present invention inputs an internal functional logic signal or a test result signal, supplies the corresponding output signal to a common external output terminal, and enters a 0MO3) transistor that is brought into a high impedance state by a control signal. It is configured to include a plurality of output circuits having a plurality of points.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の第1の実施例の回路図である。FIG. 1 is a circuit diagram of a first embodiment of the present invention.

本来の機能論理信号SDを入力し対応する出力信号S、
を出力する出力回路lと、テスト結果信号S、に対応す
る出力信号S、を出力する出力回路2のそれぞれのCM
OSトランジスタの中点Md1M、が共に出力端子D0
に接続している。
Inputting the original functional logic signal SD, the corresponding output signal S,
CM of each of the output circuit 1 that outputs the test result signal S, and the output circuit 2 that outputs the output signal S corresponding to the test result signal S.
The middle point Md1M of the OS transistor is both the output terminal D0
is connected to.

本来の論理動作を出力させる場合は、OET入力を高レ
ベルに固定して出力回路2の出力状態を高インピーダン
ス状態にしておく。
When outputting the original logical operation, the OET input is fixed at a high level and the output state of the output circuit 2 is set to a high impedance state.

こうすることで、テスト回路4がない場合と同様に、D
入力とOE大入力組合せ状態により出力端子D0は高レ
ベル、低レベルまたは高インピーダンス状態の玉出力が
可能である。
By doing this, D
Depending on the input and OE large input combination state, the output terminal D0 can output a high level, a low level, or a high impedance state.

一方、σ盲を高レベルに固定することで、出力回路1の
出力は高インピーダンス状態となり、テスト結果信号S
TはOETが低レベルの時にDoに出力される。
On the other hand, by fixing the σ blindness to a high level, the output of the output circuit 1 becomes a high impedance state, and the test result signal S
T is output to Do when OET is at a low level.

OETが高レベルの時はDoは高インピーダンス状態に
なる。
When OET is at a high level, Do is in a high impedance state.

出力回路2はテスト結果信号S、の出力専用のため、高
速動作は要求されないので、出力回路2のトランジスタ
の寸法は小さくても良く、出力回路1から見た場合の出
力回路2の負荷浮遊容量は無視できる。
Since the output circuit 2 is used exclusively for outputting the test result signal S, high-speed operation is not required. Therefore, the transistor size of the output circuit 2 may be small, and the load stray capacitance of the output circuit 2 when viewed from the output circuit 1 is small. can be ignored.

また、出力回路1は実質上テスト回路4がない場合の回
路と同様であり、第3図の余計な選択回路1.を持たな
いのでその分の余分な遅延時間は出力回路11は本来の
機能論理信号SDを出力するための出力回路であり、テ
スト結果信号S T l 1ST2を出力するための出
力回路12と13を構成する0MO3)ランジスタの中
点M、を出力端子D0に接続している。
Further, the output circuit 1 is substantially the same as the circuit without the test circuit 4, and the unnecessary selection circuit 1 in FIG. The output circuit 11 is an output circuit for outputting the original functional logic signal SD, and the output circuits 12 and 13 for outputting the test result signal S T l 1ST2 are The middle point M of the transistor 0MO3) is connected to the output terminal D0.

本来の動作をさせる場合は、下Tを高レベルに、T2を
低レベルにそれぞれ固定し、出力回路12及び13の出
力を高インピーダンス状態にしておく。
When performing the original operation, the lower T is fixed at a high level, T2 is fixed at a low level, and the outputs of the output circuits 12 and 13 are kept in a high impedance state.

この場合、入力信号百。とOE入力信号の組合せ状態に
より、出力端子D0は高レベル、低レベルまたは高イン
ピーダンス状態の出力が可能である。
In this case, the input signal is 100. Depending on the combination of the OE and OE input signals, the output terminal D0 can output a high level, a low level, or a high impedance state.

一方、OEを低レベルに固定することで出力回路11の
出力は高インピーダンス状態になる。
On the other hand, by fixing OE to a low level, the output of the output circuit 11 is placed in a high impedance state.

そして、T丁のテスト結果信号St+が低レベルの時に
出力回路12は高レベル出力、T2のテスト結果信号S
t□が高レベルの時に出力回路13は低レベル出力とな
り、それぞれDoに出力される。
When the test result signal St+ of T2 is at a low level, the output circuit 12 outputs a high level, and the test result signal S of T2 is
When t□ is at a high level, the output circuit 13 outputs a low level, which is output to Do.

ただし、S、1の低レベルとST2の高レベルは同時に
発生しないように制御される。
However, the low level of S,1 and the high level of ST2 are controlled so as not to occur simultaneously.

出力回路11は前述の第1図の出力回路1と同様にテス
ト回路4の出力回路12.13が並列なので機能データ
の遅延時間の増加はない。
Since the output circuit 11 is connected in parallel with the output circuits 12 and 13 of the test circuit 4 in the same way as the output circuit 1 of FIG. 1 described above, there is no increase in the delay time of functional data.

しかも、出力回路12及び13の回路は、それぞれ1個
のトランジスタで構成されているので、半導体装置のチ
ップ上の配置に特別の考慮はいらない。
Moreover, since each of the output circuits 12 and 13 is composed of one transistor, no special consideration is required for the arrangement on the chip of the semiconductor device.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、高インピーダンスな状態
を出力できる複数個の出力回路の出力端を外部端子に共
通接続して遅延時間を増加させることなく、テスト回路
の状態を出力できる効果がある。
As explained above, the present invention has the effect of outputting the state of a test circuit without increasing the delay time by commonly connecting the output terminals of a plurality of output circuits capable of outputting a high impedance state to an external terminal. .

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の第1の実施例の回路図、第2図は本発
明の第2の実施例の回路図、第3図は従来の半導体装置
の一例の回路図である。 1.2.11〜13・・・・・・出力回路、3・・・・
・・機能回路、4・・・・・・テスト回路、5〜7・・
・・・・NANDゲート、Do・・・・・・外部出力端
子、M・・・・・・CMOSトランジスタの中点、SD
・・・・・・機能論理信号、S、・・・・・テスト結果
信号。
FIG. 1 is a circuit diagram of a first embodiment of the invention, FIG. 2 is a circuit diagram of a second embodiment of the invention, and FIG. 3 is a circuit diagram of an example of a conventional semiconductor device. 1.2.11-13... Output circuit, 3...
...Functional circuit, 4...Test circuit, 5-7...
...NAND gate, Do...external output terminal, M...middle point of CMOS transistor, SD
...Functional logic signal, S, ...Test result signal.

Claims (1)

【特許請求の範囲】[Claims] 内部の機能論理信号またはテスト結果信号を入力してそ
れぞれに対応する出力信号を共通の外部出力端子に供給
し、かつ制御信号によって高インピーダンス状態になる
CMOSトランジスタの中点を有する複数の出力回路を
含むことを特徴とする半導体装置。
A plurality of output circuits each having a midpoint of a CMOS transistor that inputs an internal function logic signal or a test result signal and supplies a corresponding output signal to a common external output terminal, and that is brought into a high impedance state by a control signal. A semiconductor device comprising:
JP1270883A 1989-10-17 1989-10-17 Semiconductor device Pending JPH03132111A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1270883A JPH03132111A (en) 1989-10-17 1989-10-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1270883A JPH03132111A (en) 1989-10-17 1989-10-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH03132111A true JPH03132111A (en) 1991-06-05

Family

ID=17492294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1270883A Pending JPH03132111A (en) 1989-10-17 1989-10-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH03132111A (en)

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