JPH0316218A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To reduce electrode wiring resistance as well as prevent breakage by a method wherein electrically conductive resist is embedded on a first electrode wiring layer to be flattened on a contact window. CONSTITUTION:After an interlayer insulation film 13 is formed on a semiconductor substrate 11 and a contact window 14 is opened on a specific position by etching, a first aluminum electrode wiring layer 15 is adhered on a diffusion layer region 12 of the semiconductor substrate exposed at the contact window by deposition or the like. After electrically conductive resist 18 is adhered by spin application as a conductive organic high polymer compound on the layer 15, conductive resist except on a recess of the first aluminum electrode wiring layer 16 is removed by etch back to leave the conductive resist 18 only on the recess to be embedded and flattened. A second electrode wiring layer 13 is adhered on this. Thus flattening of the electrode layer of the contact window 14 can be done as well as electrode wiring resistance can be decreased thereby preventing breakage.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a semiconductor device in which the electrode wiring layer is planarized at the contact portion between the electrode wiring layer and a diffusion layer in a semiconductor substrate. .

Conventionally, as shown in FIG. 2, BPSG is formed as an interlayer insulating film 23 on a semiconductor substrate 21 (b), and after a contact window 24 is opened, FC+ is deposited on it, etc. The first aluminum wiring layer 25 is formed by f(11).

Problems to be Solved by the Invention Conventionally, as shown in Figure 2, the aluminum wiring layer used as electrode wiring is formed by vapor deposition, so in a contact window with a step, the part that becomes thick at the center of the bottom. 27 and a thinner portion 26 at the corner of the bottom periphery. As a result, the resistance of the electrode wiring increases, and sometimes the wiring breaks at the corners of the periphery. Further, there is a problem in that the level difference in the semiconductor device increases near the contact window.

In view of this point, the present invention seeks to provide a method for manufacturing a semiconductor device that can reduce the electrode wiring resistance of a contact window.

Means for Solving the Problems In order to achieve the above object, the present invention includes a step of depositing an interlayer insulating film on a semiconductor substrate, a step of forming a contact window in the interlayer insulating film, and a step of forming a contact window in the interlayer insulating film. A step of depositing a first electrode wiring layer on the partially exposed diffusion layer of the semiconductor substrate, and a step of applying a conductive organic layer to the concave portion of the first electrode wiring layer in the contact window portion by spin coating and etching back. Manufacturing a semiconductor device characterized by a step of embedding a molecular compound and a step of depositing a second electrode wiring layer on the conductive organic polymer compound buried in the first electrode wiring layer and the recessed portion of the contact window. It's a method.

Function: By this method of manufacturing a semiconductor device, the electrode wiring layer of the contact window can be planarized and the electrode wiring resistance can be reduced.

Further, a break in the first electrode wiring at the bottom of the contact window is relieved by the buried conductive organic polymer compound and the second electrode wiring layer above.

EXAMPLES Below, a method for manufacturing a semiconductor device according to the present invention will be explained in detail with reference to FIG.

FIG. 1 is a sectional view showing a contact portion of an embodiment of the semiconductor device of the present invention.

After forming BPSG as an interlayer insulating film 13 on a semiconductor substrate 11 (b) and opening a contact window 14 at a predetermined location by etching, the diffusion layer region 12 of the semiconductor substrate exposed in the contact window portion is A first aluminum electrode wiring layer 15 is deposited thereon by vapor deposition or the like ((13) A conductive resist 1B is applied as a conductive organic polymer compound on top of the first aluminum electrode wiring layer 16 by spin coating. After depositing (e), the conductive resist other than the concave portions of the first aluminum electrode wiring layer 16 is removed by etch-back, and the conductive resist 18 is left only in the concave portions and buried and flattened ( 0. A second electrode wiring layer 19 is deposited on the first aluminum electrode wiring layer 16 and the conductive resist 18 embedded in the contact recess (ship).

As described above, according to this embodiment, even if the first aluminum wiring layer 16 is disconnected at the bottom of the contact window, it can be relieved by the polycrystalline silicon in the recessed portion and the second aluminum wiring layer 20 above.

Effects of the Invention According to the method for manufacturing a semiconductor device of the present invention, a conductive resist is buried on top of the first electrode wiring layer in the contact window to planarize the layer, thereby reducing electrode wiring resistance and preventing disconnection. It can be eliminated. As a result,
The reliability of the electrode wiring layer can be improved.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing a contact portion of a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a contact portion of a conventional semiconductor device. 11... Semiconductor substrate, 12... Diffusion layer region, 13... Interlayer insulating film, 14...
Contact window, 16...First aluminum wiring layer, 1
6...The aluminum wiring is thinner at the corners around the contact, 1.Is the aluminum wiring thicker at the center of the contact? Part, 18... Conductive resist, 19... Second aluminum wiring layer, 21
... Semiconductor substrate, 22 ... Diffusion layer region, 23 ... Interlayer insulating film, 24 ... Contact window, 26 ... Aluminum wiring Layer, 26...
...The area where the aluminum wiring is thinner at the corner around the contact, 27......The aluminum at the center of the contact ■
The part where the wiring becomes thick.

Claims (3)

[Claims] (1) A step of depositing an interlayer insulating film on a semiconductor substrate, a step of opening a contact window in the interlayer insulating film, and a step of depositing a first contact window on the diffusion layer region of the semiconductor substrate exposed in the contact window portion. A method for manufacturing a semiconductor device, comprising the steps of depositing an electrode wiring layer, and embedding a conductive organic polymer compound into the recessed portion of the first electrode wiring layer at the contact window portion by spin coating and etching back. 2. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of: (2) depositing a second electrode wiring layer on the first electrode wiring layer and the contact window in which a conductive organic polymer compound is embedded. . (3) The method of manufacturing a semiconductor device according to claim 1, wherein a conductive resist is used as the conductive organic compound.